• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.231-232
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• 2016

We have fabricated the nc-Si, IGZO based nonvolatile memory TFTs using mobile protons, which can be generated by simple hydrogen insertion process via H-NB treatment at room temperature. The TFT devices above exhibited reproducible hysteresis behavior, stable ON/OFF switching, and non-volatile memory characteristics. Also executed hydrogen treatment in order to figure out the difference of mobile proton generation between PECVD and our modified H-NB CVD. The room temperature proton-insertion process can reveal flexible inorganic based all-in-one display panel including driving circuit and memory circuit.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.192.1-192.1
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• 2015

We demonstrated the nonvolatile memory functionality of nano-crystalline silicon (nc-Si) and InGaZnOxide (IGZO) thin film transistors (TFTs) using mobile protons that are generated by very short time hydrogen neutral beam (H-NB) treatment in gate insulator (SiO2). The whole memory fabrication process kept under $50^{\circ}C$ (except SiO2 deposition process; $300^{\circ}C$). These devices exhibited reproducible hysteresis, reversible switching, and nonvolatile memory behaviors in comparison with those of the conventional FET devices. We also executed hydrogen treatment in order to figure out the difference of mobile proton generation between PECVD and H-NB CVD that we modified. Our study will further provide a vision of creating memory functionality and incorporating proton-based storage elements onto a probability of next generation flexible memorable electronics such as low power consumption flexible display panel.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1635-1636
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• 2006

In this paper, a non-vacuum packaged single crystalline silicon MEMS gyroscope is designed, fabricated and tested. To reduce air damping of the gyroscope structure for non-vacuum packaging, air damping model is used and damping is minimized by analysis. The inner and outer spring length is optimized by ANSYS simulation for rigid body motion. The gyroscope is fabricated by SiOG(Silicon On Glass) process. The performance of the gyroscope is measured to evaluate the characteristic of the gyroscope. The sensitivity, non-linearity, noise density and the bias stability are measured to 9.7693 mV/deg/s, 04265 %, 2.3 mdeg/s/rtHz and 16.1014 deg/s, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.318.1-318.1
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• 2013

Nowadays Cu2ZnSnS4 (CZTS) solar cell is attracting a lot of attention as a strong alternative to CIGS solar cell due to nontoxic and inexpensive constituent elements of CZTS. From various processes for the fabrication of CZTS solar cell, solution-based deposition of CZTS thin films is well-known non-vacuum process and many researchers are focusing on this method because of large-area deposition, high-throughput, and efficient material usage. Typically the solution-based process consists of two steps, coating of precursor solution and annealing of the precursor thin films. Unlike vacuum-based deposition, precursor solution contains unnecessary elements except Cu, Zn, Sn, and S in order to form high quality precursor thin films, and thus the precise control of precursor thin film preparation is essential for achieving high efficient CZTS solar cells. In this work, we have investigated the effect of preparation condition of CZTS precursor thin films on the performance of CZTS solar cells. The composition of CZTS precursor solution was controlled for obtaining optimized chemical composition of CZTS absorber layers for high-efficiency solar cells. Pre-annealing process of the CZTS precursor thin films was also investigated to confirm the effect of thermal treatment on chemical composition and carbon residues of CZTS absorber layers. The change of the morphology of CZTS precursor thin film by the preparation condition was also observed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.6
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• pp.733-740
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• 2014

A resistive micro Pirani gauge using amorphous silicon (a-Si) thin membrane is proposed. The proposed Pirani gauge can be easily integrated with the other process-compatible membrane-type sensors, and can be applicable for in-situ vacuum monitoring inside the vacuum package without an additional process. The vacuum level is measured by the resistance changes of the membrane using the low noise correlated double sampling (CDS) capacitive trans-impedance amplifier (CTIA). The measured vacuum range of the Pirani gauge is 0.1 to 10 Torr. The sensitivity and non-linearity are measured to be 78 mV / Torr and 0.5% in the pressure range of 0.1 to 10 Torr. The output noise level is measured to be $268{\mu}V_{rms}$ in 0.5 Hz to 50 Hz, which is 41.2% smaller than conventional CTIA.

• Archives of Metallurgy and Materials
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• v.65 no.4
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• pp.1311-1315
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• 2020

This study investigates the microstructures and the mechanical properties of equiatomic Ti₂₀Mo₂₀Ta₂₀Nb₂₀V₂₀ and non-equiatomic Ti₄₀Mo₁₅Ta₁₅Nb₁₅V₁₅ and Ti₆₀Mo₁₀Ta₁₀Nb₁₀V₁₀ HEAs using X-ray diffraction (XRD) analysis, field emission scanning electron microscope (FE-SEM), and micro-Vickers hardness test. The specimens were fabricated using the vacuum arc remelting (VAR) process and homogenized at a temperature of 1300℃ for 4 h in a vacuum atmosphere. The determined thermodynamic parameters, Ω ≥ 1.1, δ ≤ 6.6%, and VEC < 6.87, suggested that the HEAs consisted of BCC solid solutions. XRD patterns of all the HEAs displayed single BCC phases. The difference in the solidification rate led to the micro-segregation associated with the elements Ta and Mo enriched in the dendrite arms and the elements V and Ti in the inter-dendritic regions. The HEA specimens showed a decrease in hardness with higher concentration of Ti element because the intrinsic hardness of Ti is lower as compared to the intrinsic hardness of Nb and Mo.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2004.05a
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• pp.736-741
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• 2004

In high-capacity disk drives with ever-growing track density, the allowable level of position error signal (PES) is becoming smaller and smaller. In order to achieve the high TPI disk drive, it is necessary to improve the writing accuracy during the STW(servo track writing) process through the reduction of TMR sources. Among the main contributors of the NRRO(Non-Repeatable Run-out) PES, the disk vibration and the HSA(head-stack assembly) vibration is considered to be one of the most significant factors. Also the most contributors of RRO(Repeatable Run- out) come from the contributors of NRRO which is written-in at the time of STW(servo track writing) process. In this paper, the experimental test result shows that the effect of NRRO on servo written-in RRO effectively can be reduced through a STW process under low dense medium condition such as semi-vacuum.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.11.1-11.1
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• 2010

As one of the non-vacuum, low temperature fabrication route, electrochemical synthesis has been focused for pursuing the cost-effective pathway to produce high efficiency photovoltaic devices. Especially the availability to form the thin film structure on flexible substrate would be the great advantage of electrochemical process. The successful synthesis of the most favorable absorber materials such as CdTe and CIGS has been reported by many researchers, however, the efficiency of electrochemically synthesized could not exceed that from vacuum process, because of microstructural controllability and compositional variation on devices. In this study, we represent the effect of process parameters on the microstructure and composition of compound semiconductor during the synthesis, and propose the photovoltaic characteristics of electrochemically synthesized solar cells.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.198-205
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• 1992

Abstract-Planarieation technology, which is essential to VLSI, has been developed using non-etch back Spin- On-Glass (SOG). Process factors for 1.5 micron double metal technology are optimized by the statistical design of experiments. Optimum conditions are found to be a process with twice SOG coating, sufficiently long hot plate baking at 300t, and furnace curing for 40 minutes below 400$^{\circ}$C.

• Tribology and Lubricants
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• v.24 no.6
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• pp.326-331
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• 2008

The contact surfaces between mold and target should be in parallel for a proper imprinting process. However, large size of contacting area makes it difficult for both mating surfaces (mold and target planes) to be in all uniform contact with the expected precision level in terms of thickness and position. This is caused by the waviness of mold and target although it is very small relative to the area scale. The gripping force for both mold and target by the vacuum chuck is other major effect to interrupt the uniform contact, which must be avoided in imprinting mechanism. In this study, the cause of non-conformal contact mechanism between mold and target is investigated with the consideration of deformation due to the vacuum gripping for the size $470{\times}370\;mm^2$ LCD panel.