• 한국정밀공학회지
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• 제29권3호
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• pp.273-278
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• 2012

$ZrB_2$ has a melting temperature of $3245^{\circ}C$ and a low density of $6.1\;g/cm^3$, which makes this a candidate for application to ultra-high temperature over $2000^{\circ}C$. Beside these properties, $ZrB_2$ has excellent resistance to thermal shock and oxidation compared with other non-oxide engineering ceramics. This paper reviewed briefly 2 research examples, which are related to densification and properties of $ZrB_2$-based ceramics for ultra-high temperature applications. In the first section, the effect of $B_4C$ addition on the densification and properties of $ZrB_2$-based ceramics is shown. $ZrB_2$-20 vol.% SiC system was selected as a basic composition and $B_4C$ or C was added to this system in some extents. With sintered bodies, densification behavior and hightemperature (up to $1400^{\circ}C$) properties such as bending strength and hardness are examined. In the second section, the effect of the SiC size on the microstructures and physical properties is shown. $ZrB_2$-SiC ceramics are fabricated by using various SiC sources in order to investigate the grain-growth inhibition and the mechanical/thermal properties of $ZrB_2$-SiC.

• 마이크로전자및패키징학회지
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• 제11권4호
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• pp.37-41
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• 2004

이동 통신 기기의 광대역화에 따라 기존의 인쇄 회로 기판에 비해 양호한 전기적 특성과 수동형 부품을 내장할 수 있는 LTCC(Low Temperature Co-fired Ceramic)에 대한 많은 연구 개발이 진행되고 있으나 불 균일한 수축으로 인해 적용에 한계를 보여 왔다. 본 연구에서는 짧은 시간내에 온도를 균일하게 올릴 수 있는 혼합 가열 방식을 개발하여 하부에서부터 시편의 얇은 층이 순차적으로 소결 되도록 하는 일 방향 소결의 조건을 제공하여 시편 상부 표면의 배선 형상이 종래의 전기로 가열보다 안정적으로 형성되는 결과를 얻었다. 기판의 소결 특성, 배선의 전기적 특성, 그리고 배선의 기계적 특성 등을 비교한 결과, 기판의 소형화와 배선의 고밀도화에 전기로 가열 보다 혼합 가열이 적용 가능성이 높음을 알 수 있었다.

• 한국세라믹학회지
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• 제34권1호
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• pp.23-30
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• 1997

SrCO3 TiO2, 그리고 Nb2O5를 출발원료로 하여 환원분위기하에서 반도성 SrTiO3 소결첼르 제조하였다. 반도성 다결정 소결체 내에서 acceptor 역할을 할 수 있는 Na과 K 이온을 입계를 따라 80$0^{\circ}C$~120$0^{\circ}C$ 온도범위에서 확산시킨 후, 열처리조건에 따른 입계의 전기적 화학적 특성을 고찰하였다. 이차열처리한 소결체의 입계에는 일정한 전기적 포텐셜장벽과 이에 상관된 전자고갈영역이 형성되어 비선형적인 전류-전압 특성을 보이고 문턱전압(threshold voltage)은 10~70V, 입계포텐셜장벽은 0.1~2eV의 크기를 나타내었다. Na과 K 이온은 입계로부터 입자내부로 확산하여 20~50 nm 깊이의 확산층을 형성하며, 이들 확산층에서 Na 또는 K과의 치환에 기인하여 Sr농도가 감소하였으며 치환에 따른 전기적 중성유지를 위하여 산소 vacancy 농도가 증가하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.19.2-19.2
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• 2010

Printed electronics using printing process has broadened in all respects such as electrics (lighting, batteries, solar cells etc) as well as electronics (OLED, LCD, E-paper, transistor etc). Copper is considered to be a promising alternative to silver for printed electronics, due to very high conductivity at a low price. However, Copper is easily oxidized, and its oxide is non-conductive. This is the highest hurdle for making copper inks, since the heat and humidity that occurs during ink making and printing simply accelerates the oxidation process. A variety of chemical treatments including organic capping agents and metallic coating have been used to slow this oxidation. We have established synthetic conditions of copper nanoparticles (CuNPs) which are resistant to oxidation and average diameter of 20 to 50nm. Specific resistivity should be less than $4\;{\mu}{\Omega}{\cdot}cm$ when sintered at lower temperature than $250^{\circ}C$ to be able to apply to conductive patterns of FPCBs using ink-jet printing. Through this study, the parameters to control average diameter of CuNPs were found to be the introduction of additive agent, the feeding rate of reducing agent, and reaction temperature. The CuNPs with various average diameters (58, 40, 26, 20nm) could be synthesized by controlling these parameters. The dispersed solution of CuNPs with an average size of 20 nm was made with nonpolar solvent containing 3 wt% of binder, and then coated onto glass substrate. After sintering the coated substrates at $250^{\circ}C$ for 30 minutes in nitrogen atmosphere, metallic copper film resulted in a specific resistivity of $4.2\;{\mu}{\Omega}{\cdot}cm$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.386-389
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• 2001

In this study, development of a new LTCC material using non-glassy system was attempted with repsect to reducing the fabrication process steps and cost down. Lowering the sintering temperature can be achieved by liquid phase sintering. However, presence of liquid phases usually decrease dielectric properties, especially the quality factor. Therefore, the starting material must have quality factor as high as possible in microwave frequency range. And also, the material should have a low dielectric constant for enhancing the signal propagation speed. Regarding these factors, dielectric constants of various materials were estimated by the Clausius-Mosotti equation. Among them, $ZnWO_4$ was turned out the suitable LTCC material. $ZnWO_4$ can be sintered up to 98% of full density at $1050^{\circ}C$ for 3 hours. It's measured dielectric constant, quality factor, and temperature coefficient of resonant frequency were 15.5, 74380GHz, and $-70ppm/^{\circ}C$, respectively. In order to modify the dielectric properties and densification temperature, $B_{2}O_{3}$ and $V_{2}O_{5}$ were added to $ZnWO_4$. 40 mol% $B_{2}O_{3}$ addition reduced the dielectric constant from 15.5 to 12. And the temperature coefficient of resonant frequency was improved from -70 to $-7.6ppm/^{\circ}C$. However, sintering temperature did not change due to either lack of liquid phase or high viscosity of liquid phase. Incorporation of small amount of $V_{2}O_{5}$ in $ZnWO_{4}-B_{2}O_{3}$ system enhanced liquid phase sintering. 0.1 wt% $V_{2}O_{5}$ addition to the $0.6ZnWO_{4}-0.4B_{2}O_{3}$ system, reduced the sintering temperature down to $950^{\circ}C$. Dielectric constant, quality factor, and temperature coefficient of resonant frequency were 9.5, 16737GHz, and $-21.6ppm/^{\circ}C$, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.207-207
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• 2011

Amorphous transparent oxide semiconductors (a-TOS) have been widely studied for many optoelectronic devices such as AM-OLED (active-matrix organic light emitting diodes). Recently, Nomura et al. demonstrated high performance amorphous IGZO (In-Ga-Zn-O) TFTs.1 Despite the amorphous structure, due to the conduction band minimum (CBM) that made of spherically extended s-orbitals of the constituent metals, an a-IGZO TFT shows high mobility.2,3 But IGZO films contain high cost rare metals. Therefore, we need to investigate the alternatives. Because Aluminum has a high bond enthalpy with oxygen atom and Alumina has a high lattice energy, we try to replace Gallium with Aluminum that is high reserve low cost material. In this study, we focused on the electrical properties of IZO:Al thin films as a channel layer of TFTs. IZO:Al were deposited on unheated non-alkali glass substrates (5 cm ${\times}$ 5 cm) by magnetron co-sputtering system with two cathodes equipped with IZO target and Al target, respectively. The sintered ceramic IZO disc (3 inch ${\phi}$, 5 mm t) and metal Al target (3 inch ${\phi}$, 5 mm t) are used for deposition. The O2 gas was used as the reactive gas to control carrier concentration and mobility. Deposition was carried out under various sputtering conditions to investigate the effect of sputtering process on the characteristics of IZO:Al thin films. Correlation between sputtering factors and electronic properties of the film will be discussed in detail.

• 한국재료학회지
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• 제23권2호
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• pp.135-142
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• 2013

The Ti-6Al-4V extra low interstitial (ELI) alloy has been widely used as an orthopedic implant material because of its excellent mechanical properties and biocompatibility. However, it still has many problems, including a high elastic modulus and toxicity of the Al and V elements. Therefore, non-toxic biomaterials with a low elastic modulus need to be developed. A high energy mechanical milling (HEMM) process is introduced to improve the effect of sintering. Rapid sintering of spark plasma sintering (SPS) under pressure was used to make an ultra fine grain of Ti-25 wt.%Nb-7 wt.%Zr-10 wt.%Mo-(10 wt.%CPP) composites with bio-attractive elements for increasing strength. These composites were fabricated by SPS at $1000^{\circ}C$ at 60 MPa using HEMM powders. During the sintering process, $CaTiO_3$, TixOy, and CaO were formed because of the reaction between Ti and CPP. The effects of CPP content on the physical and mechanical properties of the sintered Ti-Nb-Zr-Mo-CPP composites were investigated. The biocompatibility and corrosion resistance of the Ti-Nb-Zr-Mo alloys were improved by the addition of CPP.

• 한국공작기계학회논문집
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• 제17권4호
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• pp.104-111
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• 2008

The objective of this study is to evaluate micro end-milling characteristics and tool wear behavior of AlN-hBN composites. First, AlN based composites with hBN contents in the range of 10 to 20vol% were prepared by hot-pressing. Vickers hardness and flexural strength of the prepared composite specimens were measured and compared according to the vol% of hBN variations. Then, cutting force variations were measured and analyzed using a tool dynamometer during the micro end-milling experiments; and machined surface shapes and roughness were investigated using a 3D non-contact type surface profiler. After micro end-milling, worn tools were investigated using a tool microscope and SEM images. From the experimental results, it can be observed that the cutting forces decreased, and surface qualities were improved with increasing hBN contents. At low content of hBN, tool chipping was observed; and tool wear rate decreased with increasing hBN contents. The results of this study insist that proper machining conditions, including tool wear behavior investigation, should be determined for the micro end-milling of AlN-hBN composites for its further application.

• 한국세라믹학회지
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• 제47권5호
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• pp.381-386
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• 2010

Some basic properties of inorganic coatings hardened by the room temperature reaction with alkalies were examined. The coating paste was prepared from the powders in the system $Al_2O_3-SiO_2$-CaO using blast furnace slag, fly ash and amorphous ceramic fiber after mixing with a solution of sodium hydroxide and water glass. The mineralogical and morphological examinations were performed for the coatings prepared at room temperature and after heating to $1200^{\circ}C$ respectively. The binding force of the coating hardened at room temperature was caused by the formation of fairly dense matrix mainly composed of oyelite-containing amorphous phase formed by the reaction between blast furnace slag and alkali solution. At the temperature, fly ash and ceramic fiber was not reacted but imbedded in the binding phase, giving the fluidity to the paste and reinforcing the coating respectively. During heating up to $1200^{\circ}C$, instead of a break in the coating, anorthite and gehlenite was crystallized out by the reaction among the binding phase and unreacted components in ternary system. The crystallization of these minerals revealed to be a reason that the coating maintains dense morphology after heating. The maintenance of binding force after heat treatment is seemed to be also caused by the formation of welldispersed fiber-like mineral phase which is originated from the shape of the amorphous ceramic fiber used as a raw materials.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.386-389
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• 2001

In this study, development of a new LTCC material using non-glassy system was attempted with respect to reducing the fabrication process steps and cost down. Lowering the sintering temperature can be achieved by liquid phase sintering. However, presence of liquid phases usually decrease dielectric properties, especially the quality factor. Therefore, the starting material must have quality factor as high as possible in microwave frequency range. And also, the material should have a low dielectric constant for enhancing the signal propagation speed. Regarding these factors, dielectric constants of various materials were estimated by the Clausius-Mosotti equation. Among them, ZnWO$_4$ was turned out the suitable LTCC material. ZnWO$_4$ can be sintered up to 98% of full density at 105$0^{\circ}C$ for 3 hours. It's measured dielectric constant, quality factor, and temperature coefficient of resonant frequency were 15.5, 74380GHz, and -70ppm/$^{\circ}C$, respectively In order to modify the dielectric properties and densification temperature, B$_2$O$_3$ and V$_2$O$_{5}$ were added to ZnWO$_4$. 40 mol% B$_2$O$_3$ addition reduced the dielectric constant from 15.5 to 12. And the temperature coefficient of resonant frequency was improved from -70 to -7.6ppm/$^{\circ}C$. However, sintering temperature did not change due to either lack of liquid phase or high viscosity of liquid phase. Incorporation of small amount of V$_2$O$_{5}$ in ZnWO$_4$-B$_2$O$_3$ system enhanced liquid phase sintering. 0.lwt% V$_2$O$_{5}$ addition to the 0.6ZnWO$_4$-0.4B$_2$O$_3$ system, reduced the sintering temperature down to 95$0^{\circ}C$ Dielectric constant, quality factor, and temperature coefficient of resonant frequency were 9.5, 16737GHz, and -21.6ppm/$^{\circ}C$ respectively.ively.