• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.6
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• pp.445-449
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• 2020

Non-volatile memory is approaching its fundamental limits with the Si₃N₄ storage layer, necessitating the use of alternative materials to achieve a higher programming/erasing speed, larger storage window, and better data retention at lower operating voltage. This limitation has restricted the development of the charge-trap memory, but can be addressed by using high-k dielectrics. The paper reviews the doping of nitrogen, titanium, and yttrium on high-k dielectrics as a storage layer by comparing MONOS devices with different storage layers. The results show that nitrogen doping increases the storage window of the Gd₂O₃ storage layer and improves its charge retention. Titanium doping can increase the charge capture rate of HfO₂ storage layer. Yttrium doping increases the storage window of the BaTiO₃ storage layer and improves its fatigue characteristics. Parameters such as the dielectric constant, leakage current, and speed of the memory device can be controlled by maintaining a suitable amount of external impurities in the device.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.237.2-237.2
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• 2013

ReRAM cell, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of conductive filament in a solid electrolyte [1,2]. Especially, Chalcogenide-based ReRAM have become a promising candidate due to the simple structure, high density and low power operation than other types of ReRAM but the uniformity of switching parameter is undesirable. It is because diffusion of ions from anode to cathode in solid electrolyte layer is random [3]. That is to say, the formation of conductive filament is not go through the same paths in each switching cycle which is one of the major obstacles for performance improvement of ReRAM devices. Therefore, to control of nonuniform conductive filament formation is a key point to achieve a high performance ReRAM. In this paper, we demonstrated the enhanced repeatable bipolar resistive switching memory characteristics by spreading the Ag nanocrystals (Ag NCs) on amorphous GeSe layer compared to the conventional Ag/GeSe/Pt structure without Ag NCs. The Ag NCs and Ag top electrode act as a metal supply source of our devices. Excellent resistive switching memory characteristics were obtained and improvement of voltage distribution was achieved from the Al/Ag NCs/GeSe/Pt structure. At the same time, a stable DC endurance (>100 cycles) and an excellent data retention (>104 sec) properties was found from the Al/Ag NCs/GeSe/ Pt structured ReRAMs.

• Journal of KIISE:Computing Practices and Letters
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• v.16 no.1
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• pp.1-10
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• 2010

Recently heterogeneous storage system such as hybrid hard disk drive (H-HDD) combining flash memory and magnetic disk is launched, according as the read performance of NAND flash memory is enhanced as similar to that of hard disk drive (HDD) and the power consumption of NAND flash memory is reduced less than that of HDD. However, the read and write operations of NAND flash memory are slower than those of rotational disk. Besides, serious overheads are incurred on CPU and main memory in the case that intensive write requests to flash memory are repeatedly occurred. In this paper, we propose the Least Frequently Used-Hot scheme that replaces the data blocks whose reference frequency of read operation is low and update frequency of write operation is high, and the data flushing scheme that rearranges the data blocks into the multi-zone of the rotation disk. Experimental results show that the execution time of the proposed method is 38% faster than those of conventional LRU and LFU block replacement schemes in I/O performance aspect and the proposed method increases the life span of Non-Volatile Cache 40% higher than those of conventional LRU, LFU, FIFO block replacement schemes.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.326-326
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• 2014

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states [1-3]. We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.174-174
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• 2014

Memristor devices are one of the most promising candidate approaches to next-generation memory technologies. Memristive switching phenomena usually rely on repeated electrical resistive switching between non-volatile resistance states in an active material under the application of an electrical stimulus, such as a voltage or current. Recent reports have explored the use of variety of external operating parameters, such as the modulation of an applied magnetic field, temperature, or illumination conditions to activate changes in the memristive switching behaviors. Among these possible choices of signal controlling factors of memristor, photon is particularly attractive because photonic signals are not only easier to reach directly over long distances than electrical signal, but they also efficiently manage the interactions between logic devices without any signal interference. Furthermore, due to the inherent wave characteristics of photons, the facile manipulation of the light ray enables incident light angle controlled memristive switching. So that, in the tautological sense, device orienting position with regard to a photon source determines the occurrence of memristive switching as well. To demonstrate this position controlled memory device functionality, we have fabricated a metal-semiconductor-metal memristive switching nanodevice using ZnO nanorods. Superhydrophobicity employed in this memristor gives rise to illumination direction selectivity as an extra controlling parameter which is important feature in emerging. When light irradiates from a point source in water to the surface treated device, refraction of light ray takes place at the water/air interface because of the optical density differences in two media (water/air). When incident light travels through a higher refractive index medium (water; n=1.33) to lower one (air; n=1), a total reflection occurs for incidence angles over the critical value. Thus, when we watch the submerged NW arrays at the view angles over the critical angle, a mirror-like surface is observed due to the presence of air pocket layer. From this processes, the reversible switching characteristics were verified by modulating the light incident angle between the resistor and memristor.

• Journal of IKEEE
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• v.28 no.1
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• pp.78-89
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• 2024

PMIC chips based on a BCD process used in automotive semiconductors require multi-time programmable (MTP) intellectual property (IP) that does not require additional masks to trim analog circuits. In this paper, MTP cell size was reduced by about 18.4% by using MTP cells using PMOS capacitors (PCAPs) instead of NMOS capacitors (NCAPs) in MTP cells, which are single poly EEPROM cells with two transistors and one MOS capacitor for small-area MTP IP design. In addition, from the perspective of MTP IP circuit design, the two-stage voltage shifter circuit is applied to the CG drive circuit and TG drive circuit of MTP IP design, and in order to reduce the area of the DC-DC converter circuit, the VPP (=7.75V), VNN (=-7.75V) and VNNL (=-2.5V) charge pump circuits using the charge pumping method are placed separately for each charge pump.

• Journal of Industrial Technology
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• v.21 no.B
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• pp.133-139
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• 2001

Generally $PbTiO_3$ is manufactured in a form of thin films which is useful for the application of infrared sensors and non-volatile memory devices. Moreover $PbTiO_3$ has a characteristic of adsorption for organic acid as well as electronic property. Organic acid adsorption properties of $PbTiO_3$ powder prepared by sol-gel method was compared with the powder purchased from Aldrich Co. Crystallization and particle size of $PbTiO_3$ are influenced by process variables, such as dilution of sol solution, catalysis, calcination temperature, calcination time, etc. As the size of $PbTiO_3$ power decreased until several nanometers, adsorption of acetic acid and formic acid was increased 1.5-fold and 1.2-fold respectively.

• Proceedings of the KIEE Conference
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• 2007.10c
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• pp.172-174
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• 2007

An electronic watt-hour meter with high-precision measurement technology can provide many valuable metering data of a real-time system measurements, such as per-phase voltage, ampere, active power, reactive power, apparent power, power factor, and system frequency. Also many of accumulated metering data such as active energy, reactive energy, apparent energy, and load profile can be gettable from an electronic watt-hour meter[1]. This paper presents an approach of the small-sized AMR (Automatic Meter Reading) that provides customers with a very valuable electrical service. This AMR service transmits lots of a valuable metering data by using ZigBee communication module, so that users resided in their premises can use the information to audit a power quality and improve their electrical conditions by using the PQ monitoring device equipped with ZigBee receiver. This PQ monitoring device shows metering data on LCD and transmits to the PC through an internal network. Also, the device can keep the valuable meter data into a built-in non-volatile memory. The final goal of this paper is to better understand the power quality of electrical systems and offer the power qualify information for the convenience of all power consumers.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.6
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• pp.2697-2701
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• 2012

The yield of OTP devices using anti-fuse MOS capacitor have been affected by the input resistance, the size of the pass transistor and the read transistor, and the readout voltage of programed cell. To investigate the element which gives an effect to yield, we analyze the full map data of the resistance characterization of OTP device and those data in a various experimental condition. As a result, we got the optimum conditions which is necessary to the yield improvement. The optimum conditions are as follows: Input resistance is 50 ohms, the channel length of pass transistor is 10um, read voltage is 2.8 volt, respectively.

• IEMEK Journal of Embedded Systems and Applications
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• v.12 no.3
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• pp.139-147
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• 2017

In recent years, non-volatile memory express (NVMe), a new host controller interface standard, has been adapted to overcome performance bottlenecks caused by the acceleration of solid state drives (SSD). Recently, performance breakthrough cases over AHCI based SATA SSDs by adapting NVMe based PCI Express (PCIe) SSD to servers and PCs have been reported. Furthermore, replacing legacy eMMC-flash storage with NVMe based storage is also considered for next generation of mobile devices such as smartphones. The Linux kernel includes drivers for NVMe support, and as the kernel version increases, the implementation of the NVMe driver code has changed. However, mobile devices are often equipped with older versions of Android operating systems (OSes), where the newest features of NVMe drivers are not available. Therefore, different features of different NVMe driver implementations are not well evaluated on Android OSes. In this paper, we analyze the response time of the NVMe driver for various Linux kernel version.