• Korean Chemical Engineering Research
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• v.46 no.4
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• pp.701-706
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• 2008

Nano-sized nickel powders were prepared by evaporating the bulk nickel metarial using transferred arc thermal plasma. Nitrogen gases are easily dissociated to atomic nitrogen in thermal plasma and they are quickly dissolved in molten nickel. Super-saturated atomic nitrogen in molten nickel is recombined to nitrogen gas because of the relatively low temperature of nickel surface. Generally, the recombine reaction of atomic nitrogen is exothermic, so bulk nickel is quickly evaporated to nickel vapor due to the thermal energy of recombine reaction. The particle size of nickel powder was controlled by $N_2$ used as the diluting gas. It was observed that as the diluting gas flow rate was increase, the particle size was decreased and the particle size distribution was narrowed. The average particle size at 250 l/min of the diluting gas was 202 nm analyzed by means of the particle size analyzer (PSA).

• Progress in Superconductivity and Cryogenics
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• v.23 no.2
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• pp.1-5
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• 2021

We have investigated the electrical transport properties of polycrystalline tantalum nitride (TaN_x) films. Various compositions of tantalum (nitride) thin films have been deposited on SiO₂ substrates by reactive DC magnetron sputtering while changing the ratio of nitrogen partial pressure. The substrate temperature was maintained at 283 K during deposition. X-ray diffraction analyses indicated the presence of α-Ta and β-Ta phases in the Ta film deposited in pure argon atmosphere, while fcc-TaN_x phases appeared in the sputtering gas mixture of argon and nitrogen. The N/Ta atomic ratio in the film increased ranging from 0.36 to 1.07 for nitrogen partial pressure from 7 to 20.7%. The superconducting transition temperatures of the TaN_x thin films were measured to be greater than 3.86 K with a maximum of 5.34 K. The electrical resistivity of TaN_x thin film was in the range of 177-577 𝜇Ωcm and increased with an increase in nitrogen content. The upper critical filed at zero temperature for a TaN_0.87 thin film was estimated to exceed 11.3 T, while it showed the lowest T_c = 3.86 K among the measured superconducting TaN_x thin films. We try to explain the behavior of the increase of the residual resistivity and the upper critical field for TaN_x thin films with the nitrogen content by using the combined role of the intergrain Coulomb effect and disorder effect by grain boundaries.

• Journal of Korea Water Resources Association
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• v.37 no.11
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• pp.959-967
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• 2004

The concentrations and loads of total nitrogen (TN), total phosphorus (TP), and chemical oxygen demand (COD) in wet deposition were investigated at Chungbuk National University in Cheongju, Chungbuk. Event based precipitation samples were collected during 1998 to 2003. The precipitation-weighted mean concentrations of pollutants were 0.60 mg/L for TN, 0.014 mg/L for TP, and 4.8 mg/L for COD, which were smaller than its arithmetic mean concentrations by 26% for TN, 18% for TP, and 14% for COD. The concentrations of TN, TP, and COD significantly decreased with precipitation. Mean concentrations of pollutants in spring (March-May) were higher than in other seasons likely due to dust caused by wind erosion and sand-dust storms, pollen etc. Significant relationships were determined between TN and TP, and TN and COD. Annual loads of wet deposition averaged 7.9 kg/ha$\cdot$yr for TN, 0.19 kg/ha$\cdot$yr for TP, and 63.9 kg/ha$\cdot$yr for COD, which are almost identical to the values of TN and TP but slightly higher than COD value reported in Japan.

• Journal of Korean Society of Environmental Engineers
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• v.34 no.3
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• pp.204-213
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• 2012

The objectives of this research were to estimate nitrogen budgets in agriculture and livestock in 2010, and to evaluate nitrous oxide ($N_2O$) emission by a local government. Input-output budgets for nitrogen were categorized into two sections including agriculture and livestock. Fertilizer, deposition, fixation, compost, irrigation, and feed were used as the nitrogen inputs while crop production, crop uptake, denitrification, volatilization, leaching, compost, and ocean disposal were used as the nitrogen outputs. Annual nitrogen input and output for agriculture and livestock were 1,148,848 N ton/yr and 610,380 N ton/yr respectively indicating the decrease of the nitrogen input and output, compared to our previous researches in 2005 and 2008. Total nitrogen input in 16 local government was estimated resulting that $N_2O$ emission was the highest for Jeonnam (2,574 ton/yr) and the lowest for Seoul (7 ton/yr).

• Bulletin of the Korean Chemical Society
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• v.29 no.8
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• pp.1491-1494
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• 2008

A novel platinum aminoalkoxide complex, Pt$(dmamp)_2$ has been prepared by the reaction of cis-$(py)_2PtI_2$ with two equivalents of Na(dmamp) (dmamp = 1-dimethylamino-2-methyl-2-propanolate). Single-crystal X-ray crystallographic analysis shows that the Pt(dmamp)2 complex keeps a square planar geometry with each two nitrogen atoms and two oxygen atoms having trans configuration. Platinum films have been deposited on TaN/ Ta/Si substrates by metal organic chemical vapor deposition (MOCVD) using Pt$(dmamp)_2$. As-deposited platinum thin films did not contain any appreciable amounts of impurities except a little carbon. As the deposition temperature was increased, the films resistivity and deposition rate increased. The electrical resistivity (13.6 $\mu\Omega$cm) of Pt film deposited at 400 ${^{\circ}C}$ is a little higher than the bulk value (10.5 $\mu\Omega$cm) at 293 K. The chemical composition, crystalline structure, and morphology of the deposited films were investigated by X-ray photoelectron spectroscopy, X-ray diffraction, and atomic force microscopy.

• Proceedings of the Korean Environmental Health Society Conference
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• 2005.06a
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• pp.293-298
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• 2005

Indoor air quality can be affected by indoor sources, ventilation, decay and outdoor levels. Although technologies exist to measure these factors, direct measurements are often difficult. The purpose of this study was to develop an alternative method to characterize indoor environmental factors by multiple indoor and outdoor measurements. Indoor and outdoor NO$_2$ and VOCs(benzene, toluene, xylene) concentrations were measured every 3 days for 60 consecutive days in 30 houses in Seoul, Asan and Daegu, Korea. Using a mass balance model and regression analysis, penetration factor (ventilation rate divided by the sum of ventilation rate and deposition constant) and source strength factor (source strength divided by the sum of ventilation rate and deposition constant) were calculated using multiple indoor and outdoor measurements. Subsequently, NO$_2$ and VOCs source strengths (ppb/hr) and deposition constant (K, hr$^{-1}$) were estimated. Deposition constants of NO$_2$, toluene and xylene were 0.98 ${\pm}$ 0.28, 0.71 ${\pm}$ 0.24 and 0.74 ${\pm}$ 0.53 hr$^{-1}$, respectively. Source strengths of NO$_2$, toluene and xylene were 16.28 ${\pm}$ 7.47,31.25 ${\pm}$ 38.45 and 23.45 ${\pm}$ 19.67 ppb/hr, respectively In conclusion, indoor environmental factors were effectively characterized by this method using multiple indoor and outdoor measurements.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.430-430
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• 2012

The surface recombination velocity of the silicon solar cell could be reduced by passivation with insulating layers such as $SiO_2$, SiNx, $Al_2O_3$, a-Si. Especially, the aluminium oxide has advantages over other materials at rear surface, because negative fixed charge via Al vacancy has an additional back surface field effect (BSF). It can increase the lifetime of the hole carrier in p-type silicon. The aluminium oxide thin film layer is usually deposited by atomic layer deposition (ALD) technique, which is expensive and has low deposition rate. In this study, ICP-assisted reactive magnetron sputtering technique was adopted to overcome drawbacks of ALD technique. In addition, it has been known that by annealing aluminium oxide layer in nitrogen atmosphere, the negative fixed charge effect could be further improved. By using ICP-assisted reactive magnetron sputtering technique, oxygen to nitrogen ratio could be precisely controlled. Fabricated aluminium oxy-nitride (AlON) layer on silicon wafers were analyzed by x-ray photoelectron spectroscopy (XPS) to investigate the atomic concentration ratio and chemical states. The electrical properties of Al/($Al_2O_3$ or $SiO_2/Al_2O_3$)/Si (MIS) devices were characterized by the C-V measurement technique using HP 4284A. The detailed characteristics of the AlON passivation layer will be shown and discussed.

• Journal of Environmental Science International
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• v.13 no.7
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• pp.645-653
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• 2004

Indoor air quality is affected by source strength of pollutants, ventilation rate, decay rate, outdoor level, and so on. Although technologies measuring these factors exist directly, direct measurements of all factors are not always practical in most field studies. The purpose of this study was to develop an alternative method to estimate these factors by application of multiple measurements. For the total duration of 30 days, daily indoor and outdoor $NO_2$ concentrations were measured in 30 houses in Brisbane, Australia, and for 21 days in 40 houses in Seoul, Korea, respectively. Using a box model by mass balance and linear regression analysis, penetration factor (ventilation divided by sum of air exchange rate and deposition constant) and source strength factor (emission rate divided by sum of air exchange rate and deposition constant) were calculated, Sub-sequently, the ventilation and source strength were estimated. In Brisbane, the penetration factors were $0.59\pm0.14$ and they were unaffected by the presence of a gas range. During sampling period, geometric mean of natural ventilation was estimated to be $l.l0\pm1.5l$ ACH, assuming a residential $NO_2$ decay rate of 0.8 hr^{-1}$ in Brisbane. In Seoul, natural ventilation was $1.15\pm1.73$ ACH with residential $NO_2$ decay rate of 0.94 hr^{-1}$ Source strength of $NO_2$ in the houses with gas range $(12.7\pm9.8$ ppb/hr) were significantly higher than those in houses with an electric range $(2.8\pm2,6$ ppb/hr) in Brisbane. In Seoul, source strength in the houses with gas range were $l6.8\pm8.2$ ppb/hr. Conclusively, indoor air quality using box model by mass balance was effectively characterized.

• Journal of Surface Science and Engineering
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• v.34 no.5
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• pp.414-420
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• 2001

A 30-kV plasma immersion ion implantation setup (P $I^3$) has been equipped with a self-developed 6'-magnetron to perform hard coatings with enhanced adhesion by P $I^3$D(P $I^3$ assisted deposition) process. Using ICP source with immersed Ti antenna and reactive magnetron sputtering of Ti target in $N_2$/Ar ambient gas mixture, the TiN films were prepared on Si substrates at different pulse bias and ion-to-atom arrival ratio ( $J_{i}$ $J_{Me}$ ). Prior to TiN film formation the nitrogen implantation was performed followed by deposition of Ti buffer layer under A $r^{+}$ irradiation. Films grown at $J_{i}$ $J_{Me}$ =0.003 and $V_{pulse}$=-20kV showed columnar grain morphology and (200) preferred orientation while those prepared at $J_{i}$ $J_{Me}$ =0.08 and $V_{pulse}$=-5 kV had dense and eqiaxed structure with (111) and (220) main peaks. X-ray diffraction patterns revealed some amount of $Ti_{x}$ $N_{y}$ in the films. The maximum microhardness of $H_{v}$ =35 GN/ $M^2$ was at the pulse bias of -5 kV. The P $I^3$D technique was applied to enhance wear properties of commercial tools of HSS (SKH51) and WC-Co alloy (P30). The specimens were 25-kV PII nitrogen implanted to the dose 4.10$^{17}$ c $m^{-2}$ and then coated with 4-$\mu\textrm{m}$ TiN film on $Ti_{x}$ $N_{y}$ buffer layer. Wear resistance was compared by measuring weight loss under sliding test (6-mm $Al_2$ $O_3$ counter ball, 500-gf applied load). After 30000 cycles at 500 rpm the untreated P30 specimen lost 3.10$^{-4}$ g, and HSS specimens lost 9.10$^{-4}$ g after 40000 cycles while quite zero losses were demonstrated by TiN coated specimens.s.

• Journal of the Korean Society for Heat Treatment
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• v.24 no.2
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• pp.77-81
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• 2011

Aluminum nitride (AlN) thin films were prepared by using nitrogen ion beam assisted reactive radio frequency (RF) magnetron sputtering on the glass substrates without intentional substrate heating. After deposition, the effect of nitrogen ion beam energy on the structural and optical properties of AlN films were investigated by x-ray diffraction (XRD), atomic force microscope (AFM) and UV-Vis. spectrophotometer, respectively. AlN films deposited with $N^+$ ion irradiation at 100 eV show the higher (002) peak intensity in XRD pattern than other films. It means that $N^+$ ion energy of 100 eV is the favorable condition for low temperature crystallization. AFM images also show that surface average roughness is increased from 1.5 to 9.6 nm with $N^+$ ion energy in this study. In an optical observation, AlN films which deposited by $N^+$ ion beam energy of 100 eV show the higher transmittance than that of the films prepared with the other $N^+$ ion beam conditions.