• 제목/요약/키워드: Nitride layer

검색결과 441건 처리시간 0.032초

고온하에서 질화규소의 트라이볼로지적 특성 (Tribological Characteristics of Silicon Nitride on Elevated Temperature)

  • 김대중;채영훈;김석삼
    • Tribology and Lubricants
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    • 제16권4호
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    • pp.282-288
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    • 2000
  • A sliding friction and wear test for silicon nitride (Si,N4) was conducted using a ball-on-disk specimen configuration. The material used in this study was HIPed silicon nitride. The tests were carried out from room temperature to 1000$^{\circ}C$ using self-mated silicon nitride couples in laboratory air. The worn surfaces were observed by SEM and the debris particles from the worn surfaces were analyzed for oxidation by XPS. The normal load was found to have a more significant influence on the friction coefficient of the silicon nitride than an elevated temperature. The specific wear rate was found to decrease along with the sliding distance. The specific wear rate at 29.4 N and 1000$^{\circ}C$ was 292 times larger than that at room temperature. The main wear mechanism from room temperature to 750$^{\circ}C$ was caused by brittle fracture whereas from 750$^{\circ}C$ to 1000$^{\circ}C$ the wear mechanism was mainly influenced by the oxidation of silicon nitride due to the increased temperature. The oxidation of silicon nitride at a high temperature was a significant factor in the wear increase.

Hertzian Crack Suppression and Damage Tolerance of Silicon Nitride Bilayer

  • Lee, Kee-Sung;Kim, Do-Kyung;Lee, Seung-Kun;Lawn, Brian R.
    • The Korean Journal of Ceramics
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    • 제4권4호
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    • pp.356-362
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    • 1998
  • Hertzian crack suppression phenomena and relatively high damage tolerance were investigated in hard/soft silicon nitride ($Si_3N_4$) bilayers. Coarse $\alpha}-Si_3N_4$ powder was wsed for the hard coating layer and fine $\alpha}-Si_3N_4$ powder was used for the soft substrate layer. The two layers were designed with a strong interface. Hertzian indentation was used to investigate contact fracture and damage tolerance property. Hertzian crack suppression has occurred with increasing applied load and decreasing coating thickness. The crack suppression contributed strength improvement, especially in the bilayers with thinner coatings. Ultimately, the combination of hard coating with soft but tough underlayer improved the damage tolerance of brittle $Si_3N_4$ ceramics.

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The Preparation of Alumina Particles Wrapped in Few-layer Graphene Sheets and Their Application to Dye-sensitized Solar Cells

  • Ahn, Kwang-Soon;Seo, Sang-Won;Park, Jeong-Hyun;Min, Bong-Ki;Jung, Woo-Sik
    • Bulletin of the Korean Chemical Society
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    • 제32권5호
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    • pp.1579-1582
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    • 2011
  • Alumina particles wrapped in few-layer graphene sheets were prepared by calcining aluminum nitride powders under a mixed gas flow of carbon monoxide and argon. The graphene sheets were characterized by powder X-ray diffraction (XRD), Raman spectroscopy, electron energy loss spectroscopy, and high-resolution transmission electron microscopy. The few-layer graphene sheets, which wrapped around the alumina particles, did not exhibit any diffraction peaks in the XRD patterns but did show three characteristic bands (D, G, and 2D bands) in the Raman spectra. The dye-sensitized solar cell (DSSC) with the alumina particles wrapped in few-layer graphene sheets exhibited significantly improved overall energy-conversion efficiency, compared to conventional DSSC, due to longer electron lifetime.

Ti-Al-N코팅층의 내산화 특성에 관한 연구 (Study on the Oxidation Resistance of Ti-Al-N Coating Layer)

  • 김충완;김광호
    • 한국세라믹학회지
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    • 제34권5호
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    • pp.512-518
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    • 1997
  • The high temperature oxidation behaviors of titanium nitride films prepared by PACVD technique were studied in the temperature range of from 50$0^{\circ}C$ to 80$0^{\circ}C$ under air atmosphere. Ti0.88Al0.12N film, which showed the excellent microhardness from the previous work, was investigated on its oxidation resistance compared with pure TiN film. Ti-Al-N film showed superior oxidation resistance up to $700^{\circ}C$, whereas TiN film was fast oxidized into rutile TiO2 crystallites from at 50$0^{\circ}C$. It was found that an amorphous layer having AlxTiyOz formula was formed on the surface region due to outward diffusion of Al ions at the initial stage of oxidation. The amorphous oxide layer played a role as a barrier against oxygen diffusion, protected the remained nitride layer from further oxidation, and thus, resulted in the high oxidation resistive characteristics of Ti-Al-N film.

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Preparation and characterization of zirconium nitride and hydroxyapatite layered coatings for biomedical applications

  • ;이준희;홍순익
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2012년도 춘계학술발표대회
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    • pp.102.2-102.2
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    • 2012
  • Different layers of zirconium nitride (ZrN) and hydroxyapatite (HA) coatings were prepared on cp Ti substrate for biomedical applications. The main idea is to improve the mechanical strength as well as the biocompatibility of the coating. ZrN is known for its high mechanical strength, corrosion resistance. HA is well known for its biocompatibility properties. Hence, in this study, both materials were coated on a cp Ti substrate with bottom layer with ZrN for good bonding with substrate and the top layer with HA for induce bioactivity. Middle layer was formed by a composite of HA and ZrN. Detail analyses of the layered coatings for its structural, morphological, topographical properties were carried out. Then the mechanical property of the layered coatings was analyzed by nanoindentation. Biomimetic growths of apatite on the functionally graded coatings were determined by simulated body fluid method. This study provides promising results to use this kind of coatings in biomedical field.

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EAHFCVD법에 의한 c-BN 박막형성기구와 계면층의 특성에 관하여 (Characteristics on Boundary Layer and Formation Mechanism of c-BN Thin Films During Electron Assisted Hot Filament CVD Process)

  • 최용;최진일
    • 전기학회논문지
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    • 제61권1호
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    • pp.89-93
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    • 2012
  • c-BN films were deposited on SKH-51 steels by electron assisted hot filament CVD method and microstructure development was studied processing parameters such as bias voltage, temperature, etching and phase transformation at boundary layer between BN compound and steel to develop a high performance wear resistance tools. A negative bias voltage higher than 200V at substrate temperature of $800^{\circ}C$ and gas pressure of 20 torr in B2H6-NH3-H2 gas system was one of optimum conditions to produce c-BN films on the SKH-51 steels. Thin layer of hexagonal boron nitride phase was observed at the interface between c-BN layer and substrate.

질화규소의 입계상에 존재하는 불순물이 마모에 미치는 영향 (Effect of Impurities in Grain Boundary Phases on Wear Behavior of $Si_3N_4$)

  • 오윤석;임대순;이경호
    • 한국세라믹학회지
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    • 제33권3호
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    • pp.277-284
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    • 1996
  • The water test results indicated that the impurities had detrimetal effect on the wear resistance of silicon nitride and the effects were getting severe as the temperature increased. Especially when Ca existed as an impurity the detrimental effects was the most severe. These results were resulted from the fact that impurities lowered the mechanical properties of the grain boundary phase of silicon nitride. The wear test results of glass/glass-ceramic specimens having a similar composition to the grain boundary phase of silicon nitride revea-led that the specimen containing CaO showed the lowest wear resistance. The existence of Fe and Ca at the grain boundary phase assisted forming a grain boundary phase with relatively low refractoriness. Therefore at a given wear condition the removal of deformed layer would be easier. The results showed that the glass phases could be modified by heat-treatment and this modification improved tribological characteristics of the silicon nitride.

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반응성 스퍼터링으로 성장된 결정성 질화탄소막의 기계적 특성 (Mechanical Characteristics of Crystalline Carbon Nitride Films Grown by Reactive Sputtering)

  • 이성필;강종봉
    • 한국전기전자재료학회논문지
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    • 제15권2호
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    • pp.147-152
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    • 2002
  • Carbon nitride thin films were deposited by reactive sputtering for the hard coating materials on Si wafer and tool steels. When the nitrogen content of carbon nitride film on tool steel is 33.4%, the mean hardness and elastic modulus are 49.34 GPa and 307.2 GPa respectively. The nitrided or carburised surface acts as the diffusion barrier which shows better adhesion of carbon nitride thin film on the steel surface. To prevent nitrogen diffusion from the film, steel substrate can be saturated by nitrogen forming a Fe$_3$N layer. The desirable structure at the surface after carburising is martensite, but sometimes, due to high carbon content an proeutectoid Fe$_3$C structure may form at the grain boundaries, leaving the overall surface brittle and may cause defects.

Design and Synthesis of Multi Functional Noble Metal Based Ternary Nitride Thin Film Resistors

  • Kwack, Won-Sub;Choi, Hyun-Jin;Lee, Woo-Jae;Jang, Seung-Il;Kwon, Se-Hun
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.93-93
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    • 2013
  • In recent years, multifunctional ternary nitride thin films have received extenstive attention due to its versatility in many applications. In particular, noble metal based ternary nitride thin films showed a promising properties in the application of Multifunctional heating resistor films because its good electrical properties and excellent resistance against oxidation and corrosion. In this study, we prepared multifunctional noble metal based ternary nitride thin films by atomic layer deposition (ALD) and plasma-enhanced ALD (PEALD) method. ALD and PEALD techniques were used due to their inherent merits such as a precise composition control and large area uniformity, which is very attractive for preparing multicomponent thin films on large area substrate. Here, we will demonstrate the design concept of multifunctional noble metal based ternary thin films. And, the relationship between microstructural evolution and electrical resistivity in noble metal based ternary thin films will be systemically presented. The useful properties of noble metal based ternary thin films including anti-corrosion and anti-oxidation will be discussed in terms of hybrid functionality.

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Cu seed layer 표면의 플라즈마 전처리가 Cu 전기도금 공정에 미치는 효과에 관한 연구 (Effects of Plasma Pretreatment of the Cu Seed Layer on Cu Electroplating)

  • 오준환;이성욱;이종무
    • 한국재료학회지
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    • 제11권9호
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    • pp.802-809
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    • 2001
  • Electroplating is an attractive alternative deposition method for copper with the need for a conformal and conductive seed layer In addition, the Cu seed layer should be highly pure so as not to compromise the effective resistivity of the filled copper interconnect structure. This seed layer requires low electrical resistivity, low levels of impurities, smooth interface, good adhesion to the barrier metal and low thickness concurrent with coherence for ensuring void-free fill. The electrical conductivity of the surface plays an important role in formation of initial Cu nuclei, Cu nucleation is much easier on the substrate with higher electrical conductivities. It is also known that the nucleation processes of Cu are very sensitive to surface condition. In this study, copper seed layers deposited by magnetron sputtering onto a tantalum nitride barrier layer were used for electroplating copper in the forward pulsed mode. Prior to electroplating a copper film, the Cu seed layer was cleaned by plasma H$_2$ and $N_2$. In the plasma treatment exposure tome was varied from 1 to 20 min and plasma power from 20 to 140W. Effects of plasma pretreatment to Cu seed/Tantalum nitride (TaN)/borophosphosilicate glass (BPSG) samples on electroplating of copper (Cu) films were investigated.

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