• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1170-1175
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• 1999

The microstructures and mechanical properties of $Si_3N_4$ ceramics produced by nitridation and post-sintering using semiconductor-waste-Si sludge were investigated. Lots of microcracks were observed in the waste-Si powders which contained some amounts of amorphous $SiO_2$. The nitridation rate of waste-Si compacts showed lower value than that of commercial Si powder compacts. The nitridation rate was increased with increasing nitridation temperature and then the percent of nitridation at 1470$^{\circ}C$ showed 98%. The phases of $Si_3N_4$ in the reaction-bonded bodies were mixed with ${\alpha}$ and ${\beta}$-type, and small amounts of $Si_2N_2O$ phase while those after post-sintering were ${\beta}$-$Si_3N_4$ and ${\alpha}$-Sialon. The sample post-sintered at 1950$^{\circ}C$ showed the fracture toughness of 5.6 $^MPa{\cdot}m^{1/2}$ and the fracture strength of 497 MPa which were lower than those of sintered body using commercial Si powder possibly due to the formation of ${\alpha}$-Sialon phase.

• Korean Journal of Crystallography
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• v.8 no.2
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• pp.81-88
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• 1997

We investigated the CVPE grown of GaN thin films on (0001) sapphire using the $GaCl_3$ and $NH_3$ as source gases. The growth temperatures are ranged 970 to $1040^{\circ}C$ with the various flow rate ratio of source gases. The nitridation treatment was performed using the $NH_3$ gas before the GaN deposition. The optimal growth conditions were determined to be; growth temperature of $1040^{\circ}C$, III/V flow rate ratio of 2, nitridation time of 3 min. The FWHM at the (0002) peak from the XRD analysis was shown to be 0.32 deg. for the sample grown under those conditions. The growth rate was about $40{\mu}m/hr$ at $1040^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.22 no.1
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• pp.53-59
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• 1985

Experiments related to nitriding silicon with addition of $Si_3N_4$ have provided information on the effects of such inclusion on the phase relationships of Reaction Bonded Silicon Nitride. In the current work specimens containing 0-25wt% Si3N4 which have 55.5wt% $\alpha$ 4.5wt% $eta$, 40wt% amorphous phase were nitrided for 7-20 hours at 1300-135$0^{\circ}C$ The evaluation of nitridation was per-formed by means of $\alpha$-and $\beta$-phase contents determination in nitrided specimens, In order to observe nitrided region between silicon and silicon nitride scanning electron microscopy was used to study reacted region between silicon and silicon nitride particle. For this purpose semiconductor-grade silicon wafer single crystal was used as a silicon source. The incorporation of small amount of $Si_3N_4$ powder is contributed to enhancing the rate of formation of $\alpha$-phase.

• Journal of the Korean Ceramic Society
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• v.28 no.6
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• pp.465-470
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• 1991

AlN powder was synthesized by carbothermal reduction and nitridation of aluminum hydroxides precipitated in 5∼11 pH range from Al2(SO4)3$.$18H2O aqueous solution. Nitridation reactivity of hydroxide, which depends on precipitation pH, reaction temperature and time, was examined by XRD analysis at 1200∼1350$^{\circ}C$ and compared with that of commercial ${\alpha}$-Al2O3. Hydroxides obtained at higher pH could be more easily nitridated and, considering DTA/TG and BET results, the reason seems to be specific surface area difference of reactants depending on the content of decomposed structural water and the transition rate from transition-Al2O3 to ${\alpha}$-Al2O3.

• Korean Journal of Materials Research
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• v.15 no.5
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• pp.348-352
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• 2005

Gallium oxyhydroxide (GaOOH) powders were heat-treated in a flowing ammonia gas to form GaN, and the reaction kinetics of the oxide to nitride was quantitatively determined by X-ray diffraction analysis. GaOOH turned into intermediate mixed phases of $\alpha-\;and\;\beta-Ga_2O_3$, and then single phase of GaN. The reaction time for full conversion $(t_c)$ decreased as the temperature increased. There were two-types of rapid reaction processes with the reaction temperature in the initial stage of nitridation at below $t_c$, and a relatively slow processes followed over $t_c$ does not depends on temperatures. The nitridation process was found to be limited by the rate of an interfacial reaction with the reaction order n value of 1 at $800^{\circ}C$ and by the diffusion-limited reaction with the n of 2 at above $1000^{\circ}C$, respectively, at below $t_c$. The activation energy for the reaction was calculated to be 1.84 eV in the temperature of below $830^{\circ}C$, and decreased to 0.38 eV above $830^{\circ}C$. From the comparative analysis of data, it strongly suggest the rate-controlling step changed from chemical reaction to mass transport above $830^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 1996.06a
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• pp.40-41
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• 1996

Nitridation technique has been receiving much attention for the formation of a thin nitrided buffer layer on which high quality nitride films can be formedl. Particularly, gallium nitride (GaN) has been considered as a promising material for blue-and ultraviolet-emitting devices. It can also be used for in situ formed and stable passivation layers for selective growth of $GaAs_2$. In this work, formation of a thin nitrided layer is investigated. Nitrogen electron cyclotron resonance(ECR)-plasma is employed for the formation of thin nitrided layer. The plasma source used in this work is a compact ECR plasma gun3 which is specifically designed to enhance control, and to provide in-situ monitoring of plasma parameters during plasma-assisted processing. Microwave power of 100-200 W was used to excite the plasma which was emitted from an orifice of 25 rnm in diameter. The substrate were positioned 15 em away from the orifice of plasma source. Prior to nitridation is performed, the surface of n-type (001)GaAs was exposed to hydrogen plasma for 20 min at $300{\;}^{\circ}C$ in order to eliminate a native oxide formed on GaAs surface. Change from ring to streak in RHEED pattern can be obtained through the irradiation of hydrogen plasma, indicating a clean surface. Nitridation was carried out for 5-40 min at $RT-600{\;}^{\circ}C$ in a ECR plasma-assisted molecular beam epitaxy system. Typical chamber pressure was $7.5{\times}lO^{-4}$ Torr during the nitridations at $N_2$ flow rate of 10 seem.(omitted)mitted)

• Korean Journal of Materials Research
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• v.22 no.10
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• pp.539-544
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• 2012

We have grown AlN nanorods and AlN films using plasma-assisted molecular beam epitaxy by changing the Al source flux. Plasma-assisted molecular beam epitaxy of AlN was performed on c-plane $Al_2O_3$ substrates with different levels of aluminum (Al) flux but with the same nitrogen flux. Growth behavior of AlN was strongly affected by Al flux, as determined by in-situ reflection high energy electron diffraction. Prior to the growth, nitridation of the $Al_2O_3$ substrate was performed and a two-dimensionally grown AlN layer was formed by the nitridation process, in which the epitaxial relationship was determined to be [11-20]AlN//[10-10]$Al_2O_3$, and [10-10]AlN//[11-20]$Al_2O_3$. In the growth of AlN films after nitridation, vertically aligned nanorod-structured AlN was grown with a growth rate of $1.6{\mu}m/h$, in which the growth direction was <0001>, for low Al flux. However, with high Al flux, Al droplets with diameters of about $8{\mu}m$ were found, which implies an Al-rich growth environment. With moderate Al flux conditions, epitaxial AlN films were grown. Growth was maintained in two-dimensional or three-dimensional growth mode depending on the Al flux during the growth; however, final growth occurred in three-dimensional growth mode. A lowest root mean square roughness of 0.6 nm (for $2{\mu}m{\times}2{\mu}m$ area) was obtained, which indicates a very flat surface.

• Journal of Powder Materials
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• v.28 no.3
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• pp.259-266
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• 2021

The (Ga_1-xZn_x)(N_1-xO_x) solid solution is attracting extensive attention for photocatalytic water splitting and wastewater treatment owing to its narrow and controllable band gap. To optimize the photocatalytic performance of the solid solution, the key points are to decrease its band gap and recombination rate. In this study, (Ga_1-xZn_x)(N_1-xO_x) nanofibers with various Zn fractions are prepared by electrospinning followed by calcination and nitridation. The effect of the composition and crystallinity of electrospun oxide nanofibers on the morphology and optical properties of the obtained solid-solution nanofibers are systematically investigated. The results show that the final shape of the (Ga_1-xZn_x) (N_1-xO_x) material is greatly affected by the crystallinity of the oxide nanofibers before nitridation. The photocatalytic properties of (Ga_1-xZn_x)(N_1-xO_x) with different Ga:Zn atomic ratios are investigated by studying the degradation of rhodamine B under visible light irradiation.

• Journal of the Korean Chemical Society
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• v.32 no.3
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• pp.267-275
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• 1988

Fine powders of amorphous $Al_2O_3,\;SiO_2,\;Al_2O_3-SiO_2$ system were prepared by hydrolysis of solutions containing alkoxides, aluminium tri-isopropoxide and silicon tetra-ethoxide. High purity ultrafine ${\beta}-sialon$ powders were prepared by the carbothermal reduction-nitridation of amorphous $Al_2O_3-SiO_2$ powders mixed with carbon black as a reducing agent. In the hydrolysis step the effect of the factors such as pH, reaction temperature and amount of water on the conversion rate of alkoxides to oxides was investigated. In the carbothermal reduction-nitridation the reaction path was assumed by the analysis of intermediates formed in the process of ${\beta}-sialon$ synthesis and the reaction kinetics of ${\beta}-sialon$ formation was considered.

• Resources Recycling
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• v.25 no.5
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• pp.75-83
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• 2016

AlN powder was prepared by carbon reduction and subsequent nitridation method through the scale-up experiments of 0.7 ~ 1.5 kg per batch. AlN powder was synthesized using the mixture of $Al_2O_3$ powder and carbon black at $1,550{\sim}1,750^{\circ}C$ for 0.5 ~ 4 hours under nitrogen atmosphere (flow rate of nitrogen gas: $10{\sim}40{\ell}/min$) at $2.0{\times}10^{-1}Torr$. Experimental results showed that $1,700{\sim}1,750^{\circ}C$ for the reaction temperature, 3 hr for reaction time, and $40{\ell}/min$ for the flow rate of nitrogen gas were the optimal conditions. Also, in order to remove carbon in the synthesized AlN, the remained carbon was removed at $650{\sim}750^{\circ}C$ for 1 ~ 2 hr using horizontal tube furnace. The results showed that 1 : 3.2 mol ratio of $Al_2O_3$ to carbon black, reaction temperature of $750^{\circ}C$, reaction time of 2 hours, rotating speed of 1.5 rpm under atmosphere condition were the optimal conditions. Under these conditions, high-purity AlN powder over 99% could be prepared: carbon and oxygen contents of the AlN powder were 835 ppm and 0.77%, respectively.