• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
• /
• pp.163.2-163.2
• /
• 2010

In this work, nano-flake shaped nickel oxide (NiO) films were synthesized by chemical bath deposition technique for electrochemical capacitors. The deposition was carried out for 1 and 2 h at room temperature using nickel foam as the substrate and the current collector. The structure and morphology of prepared NiO film were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). And, electrochemical properties were characterized by cyclic voltammetry, galvanostatic charge-discharge, and AC impedence measurement. It was found that the NiO film was constructed by many interconnected NiO nano-flakes which arranged vertically to the substrate, forming a net-like structure with large pores. The open macropores may facilitate the electrolyte penetration and ion migration, resulted in the utilization of nickel oxide due to the increased surface area for electrochemical reactions. Furthermore, it was found that the deposition onto nickel foam as substrate and curent collector led to decrease of the ion transfer resistance so that its specific capacitance of a NiO film had high value than NiO nano flake powder.

• 전기화학회지
• /
• 제12권3호
• /
• pp.251-257
• /
• 2009

In this study, we fabricated nickel oxide thin film for lithium based electrolyte using sol-gel method. This film was deposited by dip-coating method with mixed solvent of DameH (N,N-dimethylaminoethanol) and DI water. As changing the ratio between DmaeH and DI water, nickel oxide thin film was presented in different charge density and optical transmittance because they were shown various thickness. It was accounted for changing viscosity and density by the ratio of DmaeH and DI water. The thin film synthesized with 1 : 1 ratio of DmaeH and DI water was expressed best electrochromic performance in lithium based electrolyte, because of thick thickness but porous structures.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2011년도 추계학술발표대회
• /
• pp.18.1-18.1
• /
• 2011

Some applications of carbon nanotubes (CNTs) as field emitters, such as x-ray tubes and microwave amplifiers, require high current emission from a small emitter area. To emit the high current density, CNT emitters should be optimally fabricated in terms of material properties and morphological aspects including high crystallinity, aspect ratio, distribution density, height uniformity, adhesion on a substrate, low outgassing rate during electron emission in vacuum, etc. In particular, adhesion of emitters on the substrate is one of the most important parameters to be secured for high current field emission from CNTs. So, we attempted a novel approach to improve the adhesion of CNT emitters by incorporating metal oxide layers between CNT emitters. In our previous study, CNT emitters were fabricated on a metal mesh by filtrating the aqueous suspensions containing both highly crystalline thin multiwalled CNTs and thick entangled multiwalled CNTs. However, the adhesion of CNT film was not enough to produce a high emission current for an extended period of time even after adopting the metal mesh as a fixing substrate of the CNT film. While a high current was emitted, some part of the film was shown to delaminate. In order to strengthen the CNT networks, cobalt-nickel oxides were incorporated into the film. After coating the oxide layer, the CNT tips seemed to be more strongly adhered on the CNT bush. Without the oxide layer, the field emission voltage-current curve moved fast to a high voltage side as increasing the number of voltage sweeps. With the cobalt-nickel oxide incorporated, however, the curve does not move after the second voltage sweep. Such improvement of emission properties seemed to be attributed to stronger adhesion of the CNT film which was imparted by the cobalt-nickel oxide layer between CNT networks. Observed after field emission for an extended period of time, the CNT film with the oxide layer showed less damage on the surface caused by high current emission.

• Corrosion Science and Technology
• /
• 제6권6호
• /
• pp.311-315
• /
• 2007

The anodic polarization behavior of equiatomic TiNi shape memory alloy with pure titanium as a reference material was investigated by means of open circuit potential measurement and potentiodynamic polarization technique. And the structure of passive films on TiNi intermetallic compounds was also conducted using AES and ESCA. While the dissolved Ni(II) ion did not affect the dissolution rate and passivation of TiNi alloy, the dissolved Ti(III) ion was oxidated to Ti(IV) ion on passivated TiNi surface at passivation potential. It has also been found that the Ti(IV) ion increases the steady state potential, and passivates TiNi alloy at a limited concentration of Ti(IV) ion. The analysis by AES showed that passive film of TiNi alloy was composed of titanium oxide and nickel oxide, and the content of titanium was three times higher than that of nickel in outer side of passive film. According to the ESCA analysis, the passive film was composed of $TiO_2$ and NiO. It seems reasonable to suppose that NiO could act as unstabilizer to the oxide film and could be dissolved preferentially. Therefore, nickel oxide contained in the passive film may promote the dissolution of the film, and it could be explained the reason of higher pitting susceptibility of TiNi alloy than pure Ti.

• 한국전기전자재료학회논문지
• /
• 제36권2호
• /
• pp.170-174
• /
• 2023

Nickel oxide is a nonstoichiometric transparent conductive oxide with p-type conductivity, a wide-band energy gap of 3.4~4.0 eV, and excellent chemical stability, making it a very important candidate as a material for bipolar devices. P-type conductivity in Transparent Conductive Oxides (TCO) is controlled by the oxygen vacancy concentration. During the TCO film deposition process, additional oxygen diffusing into the NiO structure causes the formation of Ni 3p ions and Ni vacancies. This eventually affects the hole concentration of the p-type oxide thin film. In this work, the surface morphology and the electrical characteristics were confirmed in accordance with the annealing atmosphere of the nickel oxide thin film.

• Journal of the Korean Physical Society
• /
• 제73권12호
• /
• pp.1867-1872
• /
• 2018

This study proposes a route for surface modification for p-type cobalt oxide-based gas sensors. We deposit a thin layer of Ni on the Co oxide film by sputtering process and annealed at $350^{\circ}C$ for 15 min in air, which changes a typical sputtered film surface into one interlaced with a high density of hemispherical nanoparticles. Our in-depth materials characterization using transmission electron microscopy discloses that the microstructure evolution is the result of an extensive inter-diffusion of Co and Ni, and that the nanoparticles are nickel oxide dissolving some Co. Sensor performance measurement unfolds that the surface modification results in a significant sensitivity enhancement, nearly 200% increase for toluene (at $250^{\circ}C$) and CO (at $200^{\circ}C$) gases in comparison with the undoped samples.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
• /
• pp.900-903
• /
• 2003

Using $DV-X{\alpha}$ method, it is calculated that nickel reduces the energy band gap of manganese oxide in 3 additives of titanium, nickel and tin. Therefore, it is estimated that the electrical conductivity of manganese-nickel oxide has the lowest value in 3 kinds of manganese oxide. The manganese oxide and manganese-nickel oxide which were produced by anodic deposition under $30mA/cm^2$ at room temperature in manganese sulfate and manganese-nickel sulfate solution were thermal-analyzed by DTA and TGA. The weight change of manganese oxide continuously decreased below $508^{\circ}C$ and kept constant at $518{\sim}600^{\circ}C$. However, the manganeses-nickel oxide transformed at the temperature range of $510{\sim}537^{\circ}C$. It is observed that the nickel addition to manganese oxide increases transformation temperature and its range.

• 센서학회지
• /
• 제22권5호
• /
• pp.327-332
• /
• 2013

Nickel oxide films using RF sputter was formed on the $SiO_2/Si$ substrate at the room temperature controlled with water circulation system. The feasibility of nickel oxide film as a bolometric material was demonstrated. GIXRD spectrum on NiO(111), NiO(200), and NiO(220) orientation expected as the main peaks were appeared in the grown nickel oxide films. The typical resistivity acquired at the RF power of 100W was about $34.25{\Omega}{\cdot}cm$. And it was reduced to $18.65{\Omega}{\cdot}cm$ according to the increase of the RF power to 400W. The TCR of fabricated micro-bolometer with the resistivity of $34.25{\Omega}{\cdot}cm$ was $-2.01%/^{\circ}C$. The characteristics of fabricated nickel oxide film and micro-bolometer were analyzed with XRD pattern, resistivity, TCR, and SEM images.

• 한국안광학회지
• /
• 제7권2호
• /
• pp.155-161
• /
• 2002

전도성 혹은 비전도성 지지체에서 전기변색이 가능한 수 nm에서 수액 nm 두께의 금속 니켈 박막 형성에 대한 연구를 수행하였다. 광학렌즈나 혹은 LCD에 사용되는 ITO, 실리콘 웨이퍼에 박막 형성에 대한 연구는 다양한 두께의 니켈 박막은 자체로서의 응용 가능성 뿐 아니라, 광전기화학 소자, 특히 선글라스로 대변되는 변색 소자에의 응용 가능성이 아주 크다. 이러한 소자들은 나노 기술 응용과 양자점의 응용 등으로 경박단소형의 렌즈나 전지, 유리 그리고 태양 선지 등에 응용이 가능하다. 전기화학적으로 니켈 금속을 ITO 유리위에 코팅한 후, AFM, XRD을 이용하여 미세구조를 확인하고, 순환전압전류법, 시간대전류법, 임피던스를 이용하여 이들의 전기화학적 박막 특성을 조사하였다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
• /
• pp.985-988
• /
• 2008

Metal induced crystallization of a-Si with a source of Ni/Si oxide was studied. Its mechanism to induce crystallization was discussed. It was found that new source behaves an effect of self-released nickel and reducing nickel residua, so can provide a wider process tolerance; improve the uniformity and stability of TFTs.