• 대한기계학회논문집A
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• 제28권11호
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• pp.1727-1732
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• 2004

A nickel layer was deposited onto the PZT thin films, serving both as a selective radiation absorption layer and as a top electrode. The absorption properties of such nickel coated multi-layered infrared detectors were studied in the visible and infrared wavelength ranges. The optimal thickness of the nickel layer on our substrate was 10nm. The maximum absorption coefficient of the deposited 10nm thick nickel layer was 0.7 at a 632nm wavelength. However, a striking asymmetric polarization hysteresis loop was observed in these PZT thin films with nickel as the top electrode. This asymmetric polarization was attributed to the difference between the dynamic pyroelectric responses in these Ni/PZT/Pt films poled either positively or negatively before the measurement. A positively poled film showed a 40% higher voltage response than a negatively poled detector.

• 한국표면공학회지
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• 제25권4호
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• pp.189-206
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• 1992

The effect of activation and electroless nickel plating conditions on contact properties was investi-gated for selective electroless nickel plating of Si wafers in order to obtain an optimum condition of con-tact hole filling. According to RCA prosess, p-type silicon (100) surface was cleaned out and activated. The effects of temperature, DMAB concentration, time, and strirring were investigated for activation of p-type Si(100) surface. The optimal activation condition was 0.2M HF, 1mM PdCl2, 2mM EDTA,$ 70^{\circ}C$, and 90sec under ultrasonic vibration. In electroless nickel plating, the effect of temperature, DMAB concentra-tion, pH, and plating time were studied. The optimal plating condition found was 0.10M NiSO4.H2O, 0.11M Citrate, pH 6.8, $60^{\circ}C$, 30minutes. The contact resistance of films was comparatively low. It took 30minutes to obtain 1$\mu\textrm{m}$ thick film with 8mM DMAB concentration. The film surface roughness was improved with decreasing temperature and decreasing pH of the plating solution. The best quality of the film was obtained at the condition of temperature $60^{\circ}C$ and pH 6.0. The micro-vickers hardness of film was about 800Hv. Plating rate of nickel on the hole pattern was slower than that of nickel on the line pattern.

• 한국세라믹학회지
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• 제38권8호
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• pp.683-686
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• 2001

Electrochemically active lithium nickel cobalt oxide thin-film was not fabricated until now. The thin-film was deposited by RF magnetron sputtering at room temperature, and its initial phase was amorphous. By varying deposition condition, the different characteristics of thin-film were achieved. Using electrochemical analyses, the relationship between physical and electrochemical characteristics was identified. Crystallized thin-film by RTA (Rapid Thermal Annealing) was shown a good capacity and cycle property.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.252.1-252.1
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• 2013

Hexagonal boron nitride (h-BN) is a two dimensional material which has high band-gap, flatness and inert properties. This properties are used various applications such as dielectric for electronic device, protective coating and ultra violet emitter so on. 1) In this report, we were growing h-BN sheet directly on sapphire 2"wafer. Ammonia borane (H3BNH3) and nickel were deposited on sapphire wafer by evaporate method. We used nickel film as a sub catalyst to make h-BN sheet growth. 2) During annealing process, ammonia borane moved to sapphire surface through the nickel grain boundary. 3) Synthesized h-BN sheet was confirmed by raman spectroscopy (FWHM: ~30cm-1) and layered structure was defined by cross TEM (~10 layer). Also we controlled number of layer by using of different nickel and ammonia borane thickness. This nickel film supported h-BN growth method may propose fully and directly growing on sapphire. And using deposited ammonia borane and nickel films is scalable and controllable the thickness for h-BN layer number controlling.

• 전기화학회지
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• 제12권3호
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• pp.251-257
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• 2009

In this study, we fabricated nickel oxide thin film for lithium based electrolyte using sol-gel method. This film was deposited by dip-coating method with mixed solvent of DameH (N,N-dimethylaminoethanol) and DI water. As changing the ratio between DmaeH and DI water, nickel oxide thin film was presented in different charge density and optical transmittance because they were shown various thickness. It was accounted for changing viscosity and density by the ratio of DmaeH and DI water. The thin film synthesized with 1 : 1 ratio of DmaeH and DI water was expressed best electrochromic performance in lithium based electrolyte, because of thick thickness but porous structures.

• Journal of Korean Vacuum Science & Technology
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• 제1권1호
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• pp.13-18
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• 1997

The critical phenomena in nickel films have been studied by observing the resistivity behavior with temperatures near the Curie point. We observed the thickness dependence of the Curie point in nickel films, that is, the thinner the film is, the lower the Curie point is. This is as expected. Using the heat capacity data, we also found the amplitude ratios of bulk and film systems to be 1.222 and 1.197(average0, respectively. These values are cose to the theoretical prediction of 1.46 given by the Heisenberg, S=$\infty$ Model.

• Journal of Electrochemical Science and Technology
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• 제4권2호
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• pp.57-60
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• 2013

Nickel is a good electrocatalytic metal and nickel electrodes find many applications in different electrochemical fields. The nickel plated electrodes were prepared by electro-deposition technique on mild steel surface modified with in-situ deposition of nickel titanate. The SEM images shows that the nickel plating on nickel titanate modified mild steel shows better adherence than the nickel plating on bare mild steel surfaces. The extent of polarization of the nickel plating on mild steel with nickel titanate was lower than that of nickel plating on mild steel. The incorporation of nickel titanate on mild steel surface before nickel plating enhances physical, chemical and electrochemical properties of the plating film.

• 한국산업융합학회 논문집
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• 제19권4호
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• pp.198-205
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• 2016

For the study on the ion exchange of nickel hexacyanoferrate(NiHCNFe) electrode with the several cations, the film of hexacyanoferrate was prepared on the bare nickel surface by the electrochemical and chemical methods in the solution composed with 5mM K3Fe(CN)6 and 100mM KNO3. To compare the capability of the ion exchange of NiHCNFe film electrode, the repeated cyclic voltammograms were measured in the 0.5M cation nitrate solutions at $25^{\circ}C$ and pH7. It was found that the capacity of the electrochemically derivatized NiHCNFe reduced in the rate of 0.5~0.7%/cycle and was nearly exhausted at the 150th potential cycle. Better result was obtained from that the capacity loss of the chemically assembled NiHCNFe was less than 0.02%/cycle for 5,000cycles. Furthermore, the residual capacity was more than 30% at the 5,000th cycle.

• Corrosion Science and Technology
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• 제6권6호
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• pp.311-315
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• 2007

The anodic polarization behavior of equiatomic TiNi shape memory alloy with pure titanium as a reference material was investigated by means of open circuit potential measurement and potentiodynamic polarization technique. And the structure of passive films on TiNi intermetallic compounds was also conducted using AES and ESCA. While the dissolved Ni(II) ion did not affect the dissolution rate and passivation of TiNi alloy, the dissolved Ti(III) ion was oxidated to Ti(IV) ion on passivated TiNi surface at passivation potential. It has also been found that the Ti(IV) ion increases the steady state potential, and passivates TiNi alloy at a limited concentration of Ti(IV) ion. The analysis by AES showed that passive film of TiNi alloy was composed of titanium oxide and nickel oxide, and the content of titanium was three times higher than that of nickel in outer side of passive film. According to the ESCA analysis, the passive film was composed of $TiO_2$ and NiO. It seems reasonable to suppose that NiO could act as unstabilizer to the oxide film and could be dissolved preferentially. Therefore, nickel oxide contained in the passive film may promote the dissolution of the film, and it could be explained the reason of higher pitting susceptibility of TiNi alloy than pure Ti.

• 대한화학회지
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• 제58권1호
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• pp.9-16
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• 2014

Borate 완충용액에서 Ni의 부동화 피막의 생성과정(growth kinetics)과 부동화 피막의 전기적 성질을 변전위법, 대 시간 전류법 그리고 단일 주파수 또는 다중 주파수 전기화학적 임피던스 측정법으로 조사하였다. 이때 생성되는 산화피막은 Mott-Schottky 식이 적용되는 p-형 반도체 성질을 보였으며, 낮은 전극전위에서 생성되는 Ni의 부동화 피막 $Ni(OH)_2$는 전극 전위가 증가하면서 NiO, NiO(OH)로 변화되는 것을 알 수 있었다.