• 한국재료학회:학술대회논문집
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• 한국재료학회 1992년도 춘계학술발표회
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• pp.26-27
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• 1992

반도체 기억소자 contact hole의 선택적 충진의 최적 조건을 연구하기 위하여 무전해Ni도금방법을 채택하여 실리콘의 활성화와 선택적 도금의 공정조건이 Contact Hole 도금피막의 제반 특성에 미치는 영향을 조사하였다. p형 실리콘 100 소지 표면의 활성화 처리는 RCA처리에 의해 먼저 표면을 세척한 다음 온도, PdCl$_2$농도, 시간. 교반의 영향을 조사하였다 전처리의 최적조건은 7$0^{\circ}C$, 0.5M HF, ImM PdCl$_2$, 2mM EDTA, 90second이었다. 무전해도금은 NiS0$_4$.6$H_2O$를 DMAB를 환원제로 하여 온도, DMAB 농도, pH, 도금시간의 영향을 조사하였다. 무전해 도금 피막은 비교적 우수한 접촉저 항을 나타냈다. 1$\mu$m의 도금막을 얻는 데 본 실험조건에서 DMAB의 농도가 8mM일 때 30 분이 소요되었다. 도금막의 표면은 온도가 낮을수록 pH가 높을수록 평활하였고,특히 온도 6$0^{\circ}C$와 pH6.8에서 가장 우수하였다. 미세경도는 600Hv 정도였으며, 결정립의 크기 가 증가할수록 저항과 미세경도가 감소하였다.

• 대한화학회지
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• 제41권11호
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• pp.594-599
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• 1997

RF 스피터링법을 써서 $Li_{2x}Ni_{1-x}O$ 박막을 제조하였으며, 그 과정에서 기판의 온도$(50/230^{\circ}C)와$ 분위기 $(Ar/O_2)$를 변수로써 막의 미세구조를 조절하였다. 투과전자현미경을 이용한 막 구조 분석에 의해 낮은 기판 온도와 $O_2$ 조건에서 막의 조성입자가 작아짐을 관찰하였고, $50^{\circ}C/O_2$ 하에서 얻이진 $Li_{2x}Ni_{1-x}O$ 박막은 약 $80\AA$ 크기의 입자로 이루어져 있었다. 전기화학적 조건 하에서 $Li_{2x}Ni_{1-x}O$ 박막의 변색현상을 조사한 결과, 박막의 미세구조 발달에 의해 $Li^+$ 이온의 가역적 수용량이 증가하고, 결과적으로 전기변색 기능이 향상됨을 알 수 있엇다. 50 $^{\circ}C/O_2$ 하에서 얻어진 170 nm 두께의 $Li_{2x}Ni_{1-x}O$ 박막은 30 mC/$cm^2$의 $Li^+$ 이온 수용력과 함께 약 1.3의 흡광밀도(OD)를 나타내었다.

• Progress in Superconductivity
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• 제3권1호
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• pp.95-98
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• 2001

Recently, NiO films have been studied as a buffer layer to fabricate the superconductor with preferred orientation and as a diffusion barrier to prevent the reaction between superconductor and textured nickel substrate . We fabricated NiO films on textured Ni substrate by thermal oxidation with various variables of temperature, oxidation time, atmosphere, and cooling rate. We investigated the alignment of NiO films by XRD and pole figure and the microstructures by SEM. (200) <001> alignment of NiO film was observed at the oxidation condition of $1200^{\circ}C$ far 10min and slow cooling in O2 atmosphere. During the process in Ar atmosphere, we could also observe the thermal faceting which affects the alignment of NiO alms on Ni substrate.

• 대한화학회지
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• 제57권5호
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• pp.533-539
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• 2013

변전위법과 전기화학 임피던스 측정법을 이용하여 borate 완충용액에서 니켈 회전원판전극의 전기화학적 부식과 부동화를 연구하였다. Tafel 기울기, 임피던스, 회전원판전극의 회전속도, 그리고 부식전위와 부식전류의 pH 의존성으로부터 니켈의 부식과 부동화 반응 메커니즘과 환원반응에서의 수소 발생 반응구조를 제안하였다. EIS data로부터 등가회로를 제안하였으며 산화반응의 영역별로 전기화학적 변수들을 측정하였다. 부동화 반응에 의하여 생성된 $Ni(OH)_2$ 산화피막은 전기장의 영향을 받는 탈수반응에 의해 NiO로 전환되는 것으로 보인다.

• Corrosion Science and Technology
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• 제23권1호
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• pp.11-19
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• 2024

A Fe-Ni Bainitic steel as a weathering steel application was developed by combining its excellent mechanical properties and corrosion resistance in maritime environments. Nickel concentration (0.4-3 wt%) and inverted austempering multi-step (IAM) process were primary determinants of the microstructure of the Fe-Ni Bainitic steel. The initial austempering steel was performed at 300 ℃ for 600 seconds to obtain a partly bainitic transformation. The steel was heated again for 1800 s at 450 ℃. The microstructure was comprised of ferrite, a blocky martensite/austenite island, and a homogeneous lath-shape bainite structure with widths ranging from 4.67 to 6.89 ㎛. The maximum strength, 1480 MPa, was obtained with 3 wt% nickel. In this study, corrosion behavior was investigated utilizing potentiodynamic and electrochemical impedance spectroscopy (EIS) tests. A higher nickel content in Fe-Ni Bainitic steel refined the grain size, improved the bainite fraction, lowered the corrosion rate to 0.0257 mmpy, and increased the charge transfer of film resistance to 1369 Ω.

• 대한금속재료학회지
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• 제47권5호
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• pp.322-329
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• 2009

60 nm- and 20 nm-thick hydrogenated amorphous silicon (a-Si:H) layers were deposited on 200 nm $SiO_2/Si$ substrates using ICP-CVD (inductively coupled plasma chemical vapor deposition). A 10 nm-Ni layer was then deposited by e-beam evaporation. Finally, 10 nm-Ni/60 nm a-Si:H/200 nm-$SiO_2/Si$ and 10 nm-Ni/20 nm a-Si:H/200 nm-$SiO_2/Si$ structures were prepared. The samples were annealed by rapid thermal annealing for 40 seconds at $200{\sim}500^{\circ}C$ to produce $NiSi_x$. The resulting changes in sheet resistance, microstructure, phase, chemical composition and surface roughness were examined. The nickel silicide on a 60 nm a-Si:H substrate showed a low sheet resistance at T (temperatures) >$450^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate showed a low sheet resistance at T > $300^{\circ}C$. HRXRD analysis revealed a phase transformation of the nickel silicide on a 60 nm a-Si:H substrate (${\delta}-Ni_2Si{\rightarrow}{\zeta}-Ni_2Si{\rightarrow}(NiSi+{\zeta}-Ni_2Si)$) at annealing temperatures of $300^{\circ}C{\rightarrow}400^{\circ}C{\rightarrow}500^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate had a composition of ${\delta}-Ni_2Si$ with no secondary phases. Through FE-SEM and TEM analysis, the nickel silicide layer on the 60 nm a-Si:H substrate showed a 60 nm-thick silicide layer with a columnar shape, which contained both residual a-Si:H and $Ni_2Si$ layers, regardless of annealing temperatures. The nickel silicide on the 20 nm a-Si:H substrate had a uniform thickness of 40 nm with a columnar shape and no residual silicon. SPM analysis shows that the surface roughness was < 1.8 nm regardless of the a-Si:H-thickness. It was confirmed that the low temperature silicide process using a 20 nm a-Si:H substrate is more suitable for thin film transistor (TFT) active layer applications.

• 한국재료학회지
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• 제24권11호
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• pp.632-638
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• 2014

We investigated the effects of DMAB (Borane dimethylamine complex, C2H10BN) in electroless Ni-B film with addition of DMAB as reducing agent for electroless Ni plating. The electroless Ni-B films were formed by electroless plating of near neutral pH (pH 6.5 and pH 7) at $50^{\circ}C$. The electroless plated Ni-B films were coated on screen printed Ag pattern/PET (polyethylene terephthalate). According to the increase of DMAB (from 0 to 1 mole), the deposition rate and the grain size of electroless Ni-B film increased and the boron (B) content also increased. In crystallinity of electroless Ni-B films, an amorphization reaction was enhanced in the formation of Ni-B film with an increasing content of DMAB; the Ni-B film with < 1 B at.% had a weak fcc structure with a nano crystalline size, and the Ni-B films with > 5 B at.% had an amorphous structure. In addition, the Ni-B film was selectively grown on the printed Ag paste layer without damage to the PET surface. From this result, we concluded that formation of electroless Ni-B film is possible by a neutral process (~green process) at a low temperature of $50^{\circ}C$.

• Carbon letters
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• 제14권2호
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• pp.105-109
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• 2013

Effects of the amount of nickel powder (Ni) in Ni-carbon fiber (CF) hybrid filler systems on the conductivity(or resistivity) and thermal coefficient of resistance (TCR) of filled high density polyethylene were studied. Increases of the resistivity and TCR with increasing Ni concentration at a given hybrid filler content were observed. Using the fiber contact model, we showed that the main role of Ni in the hybrid filler system is to decrease the interfiber contact resistance when Ni concentration is less than the threshold point. The formation of structural defects leading to reduced reinforcing effect resulted in both a reduction of strength and an increase of the coefficient of thermal expansion in the composite film; these changes are responsible for the increases of both resistivity and TCR with increasing Ni concentration in the hybrid filler system.

• 동력기계공학회지
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• 제4권2호
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• pp.31-39
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• 2000

Relationships between the plating condition and the plating rate of the deposition film for the electroless plating of Co-Cu-P alloy were discussed in this report. The result obtained from this experiment were summarized as follow ; The optimum bath composition was consisted of 0.8 ppm thiourea as a stabilizing agent. Composition of the deposit was found to be uniform after two hours of electroless plating. Plating rates of nickel-catalytic surface and zincate-catalytic surface were found to be very closely equal, but the plating time of nickel-catalytic surface took longer than that of the zincated-catalytic surface.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.2224-2226
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• 2000

In this paper, we tried to figure out the residual stress of Electroless Nickel (EN) films as a function of process conditions: bath temperatures, pH values, and hypophosphorous acid concentrations. The residual stresses of EN films were in the range of - 4 MPa to 250 MPa depending on process conditions and they were very sensitive to phosphorous concentration in EN film and also hypophosphorous acid concentrations in EN bath.