• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
• /
• pp.147-147
• /
• 2015

The multilayer structure of the organic light emitting diode has merits of improving interfacial characteristics and helping carriers inject into emission layer and transport easier. There are many reports to control hole injection from anode electrode by using transition metal oxide as an anode buffer layer, such as V2O5, MoO3, NiO, and Fe3O4. In this study, we apply thin films of LiF which is usually inserted as a thin buffer layer between electron transport layer(ETL) and cathode, as an anode buffer layer to reduce the hole injection barrier height from ITO. The thickness of LiF as an anode buffer layer is tested from 0 nm to 1.0 nm. As shown in the figure 1 and 2, the luminous efficiency versus current density is improved by LiF anode buffer layer, and the threshold voltage is reduced when LiF buffer layer is increased up to 0.6 nm then the device does not work when LiF thickness is close to 1.0 nm As a result, we can confirm that the thin layer of LiF, about 0.6 nm, as an anode buffer reduces the hole injection barrier height from ITO, and this results the improved luminous efficiency. This study shows that LiF can be used as an anode buffer layer for improved hole injection as well as cathode buffer layer.

• Bulletin of the Korean Chemical Society
• /
• 제31권10호
• /
• pp.2939-2942
• /
• 2010

A new high-temperature pH sensor has been successfully developed by reforming the internal reference systems of the pH sensors based on oxygen-ion conducting ceramic membrane. The conventional internal reference system, a mixture of Ni and NiO, has been replaced with partially oxidized Ni powders, where Ni and NiO coexist on the surface of particles, in order to avoid the cumbersome mixing step of Ni and NiO particles. The partially oxidized Ni particles were made by oxidizing Ni under air atmosphere at $600^{\circ}C$ and characterized by X-ray diffraction (XRD) and FTIR spectroscopy. The viability of the pH sensor developed was assessed in boric acid (1000 ppm-B)/ lithium hydroxide (1 to 3 ppm-Li) buffer solutions at $280^{\circ}C$. The pH sensor showed excellent accuracy with a small error less than ${\pm}0.2$ pH units.

• 한국반도체및디스플레이장비학회:학술대회논문집
• /
• 한국반도체및디스플레이장비학회 2004년도 춘계학술대회 발표 논문집
• /
• pp.101-107
• /
• 2004

각종 전자기기의 소형화, 고성능화 요구에 따라 회로 또는 기판의 고집적화에 따른 대안으로 도입된 COF(Chip On Film)공정에서 PI(polyimide)/buffer layer/Cu의 접착력 개선을 목적으로 본 연구가 진행 되었다. 그리고 buffer layer로써 Cr을 증착 할 때 부착력의 개선을 목적으로 개질처리를 할 때는 RF plasma장비를 사용하였다. 실험 변수로는 peel strength에 대한 buffer layer의 종류와 증착시간, 표면 개질처리시 $O_2$/Ar비이다. Buffer layer의 종류에 따른 접착력은 Cr보다 Ni이 우수하였고 peel strength와 Cu THK는 같은 buffer layer의 증착 structure에서 비례 관계를 나타냈으며, Cr의 증착 시간과 Cu의 증착 시간을 변수로 peel strength test한 값은 Cr증착시간이 30초, Cu증착시간이 20분일때 40g/mm로 최적의 접착력이 나타났다. 증착전 PI의 개질 처리시 $O_2$/Ar 유량비에 따른 peel strength값은 $O_2$/Ar유량비가 증가 할수록 향상되었으며, 2/5에서 최고값인 58g/mm가 나타났다. 그 이상에서는 오히려 감소하였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 하계학술대회 논문집
• /
• pp.790-793
• /
• 2000

We have fabricated good quality superconducting YBa$_2$Cu$_3$$O_{7-x}$(YBCO) thin films on Hastelloy(Ni-Cr-Mo alloys) metallic substrates with CeO$_2$and BaTiO$_3$buffer layers in-situ by pulsed laser deposition in a multi-target processing chamber. YBCO film with CeO$_2$ single buffer layer shows T$_{c}$ of 71.64 K and the grain size less than 0.1 ${\mu}{\textrm}{m}$. When BaTiO$_3$is used as a single buffer layer, the grain size of YBCO is observed to be larger than that of YBCO/CeO$_2$by 200 times and the transition temperature of the film is enhanced to be about 84 K. CeO$_2$/BaTiO$_3$double buffer layer has been adopted to enhance the superconducting properties, which results in the enhancement of the critical temperature and the critical current density to be about 85 K and 8.4 $\times$ 10$^4$ A/cm$^2$ at 77 K, respectively mainly due to the enlargement of the grain size of YBCO film.ilm.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
• /
• pp.217-217
• /
• 2003

초전도체 선재를 제작하기위해 YBa$_2$Cu$_3$$O_{7-x}$ (YBCO) 와 Ni substrates사이의 계면 문제를 해결하기 위한 buffer layer로써 CaRuO$_3$ (CRO) thu film이 제안되었는데, 이런 buffer layer의 조건으로는Ni metal과 YBCO superconductor사이의 화학적 반응이 없어야 하고 metal component가 YBCO로 diffusion되는 것을 막아주어야 하며 substrates의 산화를 막아주어야 한다. 이런 조건을 만족시키는 것 중에서 CRO thin film이 가장 적절하였지만, CRO의 orthorhombic구조의 distortion에 의만 lattice mismatch 문제가 발생하였다. 이러한 문제를 해결하기 위해 이론적인 구조 분석을 통한 CRO의superconductor buffer layer로써의 가능성을 검토해 보는 것이 목적이다.

• 한국초전도저온공학회:학술대회논문집
• /
• 한국초전도저온공학회 2003년도 추계학술대회 논문집
• /
• pp.120-122
• /
• 2003

BaZrO$_3$and SrTiO$_3$(STO) thin films were Pulsed laser deposited on biaxially textured Ni and Ni-W alloy substrates to be used as single buffer layer for coated conductor. The texture of the films were analysed using the GADDS (general area detector diffraction system). Both films deposited on the metal tape were strongly (001) oriented, and in-plane textured (Δø (BZO) =9$^{\circ}$, Δø (STO) = 10$^{\circ}$).

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.157-158
• /
• 2013

Organic solar cell was fabricated using one-pot deposition of a mixture of NiO nanoparticles, P3HT and PCBM. In the presence of NiO, the photovoltaic performance was slightly increased comparing to that of the device without NiO. When $TiO_2$ thin films with a thickness of 2~3 nm was prepared on NiO nanoparticles using atomic layer deposition, the power conversion efficiency was increased by a factor 2.5 with respect to that with bare NiO. Moreover, breakdown voltage of the film consisting of NiO, P3HT, and PCBM on indium tin oxide was increased by more than 1 V in the presence of $TiO_2$-shell on NiO nanoparticles. It is evidenced that S atoms of P3HT can be oxidized on NiO surfaces, and $TiO_2$-shell on NiO nanoparticles. It is evidenced that S atoms of P3HT can be oxidzed on NiO surfaces, and $TiO_2$ shell heavily reduced oxidation of S at oxide/P3HT interfaces. Oxidized S atoms can most likely act as carrier generation sites and recombination centers within the depletion region, decreasing breakdown voltage and performance of organic solar cells. Our result shows that fabrication of various core-shell nanostruecutres of oxides by atomic layer deposition with controlled film thickness can be of potential importance for fabricating highly efficient organic solar cells.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
• /
• pp.873-875
• /
• 1999

We have fabricated good quality superconducting $YBa_{2}Cu_{3}O_{7-\delta}$ thin films on Hastelloy(Ni-Cr-Mo alloys) metallic substrate with $CeO_2$ and $BaTiO_3$ buffer layers in-situ by pulsed laser deposition in a multi-target processing chamber. We have chosen $CeO_2$ as a buffer layer which has cubic structure of $5.41{\AA}$ lattice parameter and only 0.2% of lattice mismatch with YBCO. $CeO_2$ layer may be helpful for power transmission due to its conducting property. In order to enhance the crystallization of YBCO films on metallic substrates. we deposited $CeO_2$ and $BaTiO_3$ buffer layers at various temperatures. The YBCO superconducting tape fabricated with $BaTiO_3$ and $CeO_2$ buffer layers shows 85K of transition temperature and about $8.4{\times}10^4A/cm^2$ of critical current density at 77K.

• 한국전기전자재료학회논문지
• /
• 제20권6호
• /
• pp.546-549
• /
• 2007

As a rule, high temperature superconducting coated conductors have multi-layered buffers consisting of seed, diffusion barrier and cap layers. Multi-buffer layer deposition requires longer fabrication time. This is one of main reasons which increases fabrication cost. Thus, single buffer layer deposition seems to be important for practical coated conductor process. In this study, a single layered buffer deposition of $CeO_2$ for low cost coated conductors has been tried using thermal evaporation technique. 100 nm-thick $CeO_2$ layers deposited by thermal evaporation were found to act as a diffusion layer. $1\;{\mu}m-thick$ SmBCO superconducting layers were deposited by thermal co-evaporation on the $CeO_2$ buffered Ni-5%W substrate. Critical current of 90 A/cm was obtained for the SmBCO coated conductors.

• 반도체디스플레이기술학회지
• /
• 제3권3호
• /
• pp.11-17
• /
• 2004

This research has been progressed for adhesive improvement of the Polyimide/Buffer layer/Cu at the COF(Chip On Film) which induced as the alternative plan about high concentration of a circuit or substrates according to demands of miniaturization and high efficiency of various electronic equipment. RF plasma equipment was applied to when plama pretreatment was performed for improvement of adhesive strength of PI and Cr as the buffer layer. Experimental fluents were a species of the buffer layer, depositied time and the ratio of $O_2$/Ar when performed to plasma pretreatment. The results are that Ni was superior to Cr at peel test according to a species of the buffer layer, peel strength and Cu THK were showed proportional relation to deposition structure of the same buffer layer and sample of the Cr depositied time(30 sec) and Cu depositied time(20 min) was showed good adhesion to peel test according to Cr's depositied time and Cu's depositied time. When perform PI's plasma pretreatment peel strength and $O_2$/Ar ratio were showed proportional relation. But $O_2$/Ar(2/5) was best condition since then decreased.