• Journal of Magnetics
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• 제10권4호
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• pp.133-136
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• 2005

The NiMn/NiFe bilayer structure which was short time annealed in order to induce unidirectional anisotropy were studied as a function of annealing temperature. The maximum exchange bias field of NiMn/NiFe bilayer was presented at $250^{\circ}C$ after short time annealing process with no external field. The appearance of exchange bias was due to phase transformation of NiMn layer. In plane angular dependence of a resonance field distribution which measured by FMR was analysed as a combined effect of unidirectional anisotropy and uniaxial anisotropy. The resonance field and the line width from FMR measurement were also analysed with annealing temperature.

• 한국자기학회지
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• 제12권4호
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• pp.132-136
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• 2002

유리기관 위에 이온 빔 증착(ion beam deposition ; IBD)법으로 제작한 버퍼층(buffer layer) Si의 두께에 따른 ［NiFe/FeMn/NiFe］3층박막의 결정성과 교환결합세기(exchange bias field ; H$_{ex}$)를 조사하였다. 버퍼층 Si는 NiFe층을 fcc(111)로 매우 우세하게 초기에 결정성장 시켰다. Si/NiFe 위의 증착된 FeMn층은 ${\gamma}$-fcc(111)구조로 성장함에 따라 안정되고 큰 H$_{ex}$를 가졌고, 버퍼 110 Oe로 거의 일정하였으며, 상부 FeMn/NiFe 이중구조의 H$_{ex}$는 300 Oe까지 증가하였다. 버퍼층이 Ta일 경우와 비교해서 Si일 때 H$_{ex}$와 결정성이 향상되었다.이 향상되었다.

• 한국자기학회지
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• 제18권5호
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• pp.180-184
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• 2008

이온빔 증착법으로 제작한 코닝유리(Corning glass)/Ta(5 nm)/NiFe(7 nm)/FeMn(25 nm)/Ta(5 nm) 다층박막 구조에서 반강자성체 FeMn층 증착시 인가한 일축 이방성 자기장 방향에 따른 강자성체 NiFe층의 자화 스핀배열 의존성을 조사하였다. NiFe층과 FeMn 층 증착시 인가한 자기장 방향을 달리한 각도는 각각 $0^{\circ},\;45^{\circ},\;90^{\circ}$였다. 용이축 MR(magnetoresistaice) 곡선으로부터 얻은 교환결합세기(Hex)는 증착 자기장 각도가 $45^{\circ}$일 때 40 Oe로, $90^{\circ}$일 때는 거의 0 Oe로 감소하였다. 반면에 곤란축 MR 곡선으로부터 얻은 $H_{ex}$ 값은 증착 자기장 각도가 $45^{\circ}$일 때 35 Oe로, 90o일 때는 79 Oe로 증가하였다. 강자성체 층의 용이축과 반강자성체 층의 일축 이방성 방향이 $90^{\circ}$ 차이가 나는 계면에서도 FeMn층이 NiFe층의 자기모멘트 스핀방향을 회전시켜 교환결합 이방성 효과가 발생함을 알 수 있었다.

• Journal of Magnetics
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• 제15권1호
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• pp.17-20
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• 2010

The relationship between ferromagnet anisotropic magnetization and the antiferromagnet atomic spin configuration was investigated for various angles of the uniaxial deposition magnetic field of the FeMn layer in the Corning glass/Ta(5nm)/NiFe(7nm)/FeMn(25nm)/Ta(5nm) multilayer that was prepared by the ion beam sputter deposition. The exchange bias field ($H_{ex}$) obtained from the measurement of the easy-axis MR loop decreased to 40 Oe at the deposition field angle of $45^{\circ}$, and to 0 Oe at the angle of $90^{\circ}$. When the difference between the uniaxial axis between the ferromagnet NiFe and the antiferromagnet FeMn was $90^{\circ}$, the strong antiferromagnetic dipole moment of FeMn caused the weak ferromagnetic dipole moment of NiFe to rotate in the interface.

• Journal of Magnetics
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• 제14권1호
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• pp.36-41
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• 2009

Magneto-optical Kerr effect (MOKE) magnetometry was used to investigate magnetization reversal dynamics in 30-nm NiFe/15-nm FeMn, 15-nm FeMn/30-nm CoFe bilayers, and 30-nm NiFe/(2,10)-nm FeMn/30-nm CoFe trilayers. The in-plane magnetization components of each ferromagnetic layer, both parallel and perpendicular to the applied field, were separately determined by measuring the longitudinal and transverse MOKE hysteresis loops from both the front and back sides of the film for an oblique incident s-polarized beam. The magnetization of the FeMn/CoFe bilayer was reversed abruptly and symmetrically through nucleation and domain wall propagation, while that of the NiFe/FeMn bilayer was reversed asymmetrically with a dominant rotation. In the NiFe/FeMn/CoFe trilayers, the magnetic reversal of the two ferromagnetic layers proceeded via nucleation and domain wall propagation for 2-nm FeMn, but via asymmetric rotation for 10-nm FeMn. The exchange-biased ferromagnetic layers showed the magnetization reversal along the same path in the film plane for the decreasing and increasing field branches from transverse MOKE hysteresis loops, which can be qualitatively explained by the theoretical model of the exchange-biased ferromagnetic/antiferromagnetic systems.

• 한국자기학회지
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• 제9권3호
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• pp.166-172
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• 1999

본 연구에서는 마그네트론 스퍼터링 법으로 제작한 Mn-Ir/Ni-Fe/Zr/Si 다층막에서 Mn-Ir의 조성과 증착조건을 변화시키고 또한 Mn-Ir층의 두께를 조절한 후 자기적 특성과 미세구조에 대하여 고찰하였다. Mn-22at% Ir의 조성에서 219Oe의 가장 높은 Hex와 30Oe의 낮은 Hc를 얻을 수 있었다. 초기진공도가 3.0$\times$10-6Torr 이상 일때는 교환이방성이 사라지게 되었으며 이것은 Mn-Ir의 비정질화와 결정립미세화에 의한 것으로 판단된다.

• Journal of Magnetics
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• 제10권2호
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• pp.44-47
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• 2005

The oscillatory interlayer exchange coupling (IEC) has been shown in pinned $[CoFe/Pt(t_{pt})/CoFe]/IrMn$ multi-layers with perpendicular anisotropy. The period of oscillation corresponds to about 2 monolayers of Pt. The oscillatory behavior of IEC depending on the nonmagnetic metallic Pt thickness is thought to be related the antiferromagnetic ordering induced by IrMn layer. Oscillatory IEC as function of insulating NiO thickness has been observed in $[Pt/CoFe]_4/NiO(t_{NiO})/[CoFe/Pt]_4$ multilayers. The effect of N (number of bilayer repeats) upon the magnetic property of [Pt/CoFe]N/IrMn is also studied.

• Journal of Magnetics
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• 제7권3호
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• pp.80-93
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• 2002

The role of magnetic anisotropy of the antiferromagnetic layer on the magnetization process of exchange coupled polycrystalline ferromagnetidantiferromagnetic bilayers is discussed. In order to elucidate the magnetic torque response of Ni-Fe/Mn-Ir bilayers, the single spin ensemble model is newly introduced, taking into account the two-dimensionally random distribution of the magnetic anisotropy axes of the antiferromagnetic grains. The mechanism of the reversible inducement of the exchange anisotropy along desirable directions by field cooling procedure is successfully explained with the new model. Unidirectional anisotropy constant, J$k$, of polycrystalline Ni-Fe/Mn-Ir and Co-Fe/Mn-Ir bilayers is investigated as functions of the chemical composition of both the ferromagnetic layer and the antiferromagnetic layer. The effects of microstructure and surface modification of the antiferromagnetic layer on JK are also discussed. As a notable result, an extra large value of J$k$, which exceeds 0.5 erg/cm$^2$, is obtained for $Co_{70}Fe_{30}Mn_{75}Ir_{25}$ bilayer with the ultra-thin (50${\AA}$∼100${\AA}$) Mn-Ir layer. The exchange anisotropy of $Co_{70}Fe_{30}$ 40 ${\AA}/Mn_{75}Ir_{25}$ 100 ${\AA}$ bilayer is stable for thermal annealing up to $400{^{\circ}C}$, which is sufficiently high for the application of spin valve magnetoresistive devices.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2006년도 동계학술연구발표회 및 자성 스핀트로닉스 국제학술대회
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• pp.37-37
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• 2006

• 한국자기학회지
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• 제20권2호
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• pp.35-40
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• 2010

NiFe/Cu/NiFe/IrMn 스핀밸브 박막소자에 대해 자화 용이축에 의존하는 형상 자기이방성을 조사하였다. Ta(5 nm)/NiFe(8 nm)/Cu(2.3 nm)/NiFe(4 nm)/IrMn(8 nm)/Ta(2.5 nm) 다층박막을 증착할 때 350 Oe의 자기장으로 인가한 자화 용이축을 폭 방향 또는 길이 방향으로 설정하여 $1\;{\mu}m\;{\times}\;18\;{\mu}m$의 소자를 제작하였다. 2단자 방법으로 소자의 자기저항 곡선으로부터 자장감응도를 측정하고 자화 용이축에 따른 형상 자기이방성을 비교하였다. 측정한 소자 길이 방향의 센싱전류와 고정층의 자화 용이축이 소자 폭방향 각도가 GMR-SV 소자를 바이오센서로 활용하는데 중요한 요인임을 확인하였다.