• Journal of the Korean Magnetics Society
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• v.12 no.4
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• pp.132-136
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• 2002

Enhancement of crystallinity and exchange bias characteristics for NiFe/FeMn/NiFe trilayer with Si buffer layer fabricated by ion-beam deposition were examined. A Si buffer layer promoted (111) texture of fcc crystallities in the initial growth region of NiFe layer deposited on it. FeMn layers deposited on Si/NiFe bilayer exhibited excellent (111) crystal texture. The antiferromagnetic FeMn layer between top and bottom NiFe films with the buffer Si 50 ${\AA}$-thick induced a large exchange coupling field Hex with a different dependence. It was found that H$\sub$ex/ of the bottom and top NiFe films with Si buffer layer revealed large value of about 110 Oe and 300 Oe, respectively. In the comparison of two Ta and Si buffer layers, the NiFe/FeMn/NiFe trilayer with Si could possess larger exchange coupling field and higher crystallinity.

• Journal of the Korean Magnetics Society
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• v.18 no.5
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• pp.180-184
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• 2008

The relation of ferromagnet anisotropic magnetization and the antiferromagnet atomic spin configuration has been investigated for variously angles of unidirectional deposition magnetic field of FeMn layer in Corning glas/Ta(5 nm)/NiFe(7 nm)/FeMn(25 nm)/ Ta(5 nm) multilayer prepared by ion beam deposition. Three unidirectional deposition angles of FeMn layer are $0^{\circ},\;45^{\circ}$, and $90^{\circ}$, respectively. The exchange bias field ($H_{ex}$) obtained from the measuring easy axis MR loop was decreased to 40 Oe in deposition angle of $45^{\circ}$, and to 0 Oe in the angle of $90^{\circ}$. One other side hand, $H_{ex}$ obtained from the measuring hard axis MR loop was increased to 35 Oe in deposition angle of $45^{\circ}$, and to 79 Oe in the angle of $90^{\circ}$. Although the difference of uniderectional axis between ferromagnet NiFe and antiferromagnet FeMn was 90o, the strong antiferromagnetic dipole moment of FeMn caused to rotate the weak ferromagnetic dipole moment of NiFe in the interface. This result implies that one of origins for exchange coupling mechanism depends on the effect of magnetic field angle during deposition of antiferromgnet FeMn layer.

• Journal of the Korean Magnetics Society
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• v.14 no.6
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• pp.228-231
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• 2004

We have studied local magnetization reversal and magnetic properties induced by Laser annealing method in the strip-patterned Ta/NiFe/FeMn/Ta and Ta/NiFe/FeMn/NiFe/Ta multilayers fabricated by ion-beam deposition. The films were exposed to the emission of the DPSS (Diode Pumped Solid State, Nd:YAG) laser under 600 G. The laser beam intensity increased up to 440 mW. When the laser illuminated the patterned film with the power of above 200 m W, the intensity of MR peak located in +87 Oe shrunk. A new MR peak was generated at -63 Oe. When the laser power is 400 mW, the location of positive MR peak(H$\sub$ex/) was changed slightly from +87 Oe to +76 Oe, and the MR ratio was decreased from 0.9% to 0.1 %. On the other hand, the new (negative) MR peak shifted from -63 Oe to -80 Oe, with the MR ratio increased up to 0.3%. As the illuminated area expanded, the intensity of opposite MR peak increased and it of negative MR peak decreased. This proved that the local reversal of exchange biasing should be realized by laser annealing.

• Journal of the Korean Magnetics Society
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• v.23 no.3
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• pp.98-103
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• 2013

The magnetic easy axis of the ferromagnetic layer for the dual-type GMR-SV (giant magnetoresistance-spin valve) having NiFe/Cu/NiFe/IrMn/NiFe/Cu/NiFe multuilayer structure controlled by the post annealing treatment. The magnetoresistive curves of a dual-type IrMn based GMR-SV depending on the direction of the magnetic easy axis of the free and the pinned layers are measured by the different angles for the applied fields. By investigating the switching process of magnetization for an arbitrary measuring direction, the optimum annealing temperature having a steady and isotropy magnetic sensitivity of 2.0 %/Oe was $105^{\circ}C$. This result suggests that the in-plane orthogonal magnetization for the dual-type GMR-SV film can be used by a high sensitive biosensor.

• Journal of the Korean Magnetics Society
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• v.14 no.6
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• pp.224-227
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• 2004

We have studied local magnetization reversal by laser annealing in exchange biased NiFe/FeMn bilayer. Local magnetization reversal was performed by using the DPSS laser under external magnetic field of 600G. When the laser illuminated the patterned film with the power of above 300 mW during 15 min, a magnetoresistance (MR) curve with symmetric peaks at the opposite field was obtained due to the local reversal of exchange biasing. The direction of exchange anisotropy in the locally reversed region can be restored by local laser annealing under alternating magnetic field, even if its MR peak was reduced by the damage and interdiffusion. The magnetic domain structure of the locally reversed region was measured by MFM. The new domains were generated by laser annealing near the exposed area.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.221-221
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• 2003

본 연구에서는 스핀밸브 다층박막에서 교환 바이어스에 영향을 끼치는 요인 중 하나인 강자성층과 반강자성층사이의 접합 계면에서의 표면 거칠기 [1,2]를 줄이기 위해 현재 반도체 공정에 사용되고 있는 이온빔 에칭 장비를 사용하여 스핀 밸브 다층박막의 씨앗층 에칭에 따른 교환 바이어스를 알아보고자 하였다. 스핀밸브 구조는 강자성층/비자성층/강자성층의 기본구조를 갖는데 이중 하나의 강자성층의 스핀방향이 반강자성층에 의해 고정되는 구조[3]로써 이러한 고정 효과를 교환 바이어스(exchange bias)라 부른다. 교환 바이어스(exchange bias)현상은 강자성과 반강자성의 접합계면에서 강한 상호 교환결합력에 의해 나타나는 현상으로 이러한 교환 바이어스 특성은 하드드라이브의 고밀도 자기헤드소자 및 비휘발성 자기 메모리소자에 응용되어 기존의 자기저항 소자의 특성을 크게 향상시킬 수 있게 되었다.

• Journal of the Korean Magnetics Society
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• v.23 no.6
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• pp.193-199
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• 2013

The regional distribution of magnetic isotropy depending on the post annealing condition for the dual-type structure GMR-SV (giant magnetoresistance-spin valve) of NiFe/Cu/NiFe/IrMn/NiFe/Cu/NiFe multilayer was investigated. The rotation of in-plane ferromagnetic layer induced by controlment of the post annealing temperature inside of the vacuum chamber. The magnetoresistive curves of a dual-type IrMn based GMR-SV depending on the direction of the magnetization easy axis of the free layer and the pinned layer are measured by between $0^{\circ}$ and $360^{\circ}$ angles for the applied fields. The optimum annealing temperature having a steady and isotropy magnetic sensitivity of 1.52 %/Oe was $107^{\circ}C$ in the rotational section of $0{\sim}90^{\circ}$. By investigating the switching process of magnetization for an arbitrary measuring direction, the in-plane orthogonal magnetization for the dual-type GMR-SV multilayer can be used by a high sensitive biosensor for detection of magnetized micro-beads.