• Journal of the Korean Ceramic Society
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• v.45 no.12
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• pp.796-801
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• 2008

$LaGaO_3$ thin film was prepared on Ni-Fe metal porous substrate by Pulsed Laser Deposition method. By the thermal reduction, the dense $NiO-{Fe_3}{O_4}$ substrate is changed to a porous Ni-Fe metal substrate. The volumetric shrinkage and porosity of the substrate are controlled by the reduction temperature. It was found that a thermal expansion property of the Ni-Fe porous metal substrate is almost the same with that of $LaGaO_3$ based oxide. $LaGaO_3$ based electrolyte films are prepared by the pulsed laser deposition (PLD) method. The film composition is sensitively affected by the deposition temperature. The obtained film is amorphous state after deposition. After post annealing at 1073K in air, the single phase of $LaGaO_3$ perovskite was obtained. Since the thermal expansion coefficient of the film is almost the same with that of LSGM film, the obtained metal support LSGM film cell shows the high tolerance against a thermal shock and after 6 min startup from room temperature, the cell shows the almost theoretical open circuit potential.

• Journal of the Korean institute of surface engineering
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• v.30 no.1
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• pp.33-43
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• 1997

The effects of process parameters substrate such as substrate current and substrate temperature on the corrosion resistance of ion plated TiN film were investigated. TiN fims were deposited on speed steel on which Ti or Ni hed been previously evaporated. Dense TiN films could be obtained under higher substrate current(1A) and substrate temperature($500^{\circ}C$), whereas TiN films deposited with lower substances current(0.5A) and substrate temperature($300^{\circ}C$) showed porous structure. The corrosion resistances of high speed steel was considerably increased when dense TiN films had been formed on it. The effect of Ti and Ni interlayer on the increase of the corrosion resistance was also significant with dense TiN films, while there was little effect of interlayer on the corrosion resistance when TiN films were porous. the effect of interlayer on the corrosion resistance was more outstanding with Ti then with Ni, because Ti reacts more easily with oxygen to form an oxide layer, and it also shows higher resistance against chlorine containing corrosion media.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.02a
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• pp.68-71
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• 2003

We fabricated Ni-substrate for YBCO coated conductors and evaluated the effects of pressing and annealing time on texture. Ni substrate was fabricated by powder metallurgy technique and compacts were prepared by applying uniaxial or isostatic pressure. The texture of substrate made by applying cold isostatic pressure (CIP) was stronger than that by uniaxial pressure. The texture of substrate made by CIP had a strong 4-fold symmetry and [111] ∥ ND texture after annealing temperature of 100$0^{\circ}C$. It is to be noted that the degree of texture was almost independent of annealing time and the full-width at half-maximum (FWHM) of in-plane and out-of-plane was measured to be in the range of 9.55$^{\circ}$-10.53$^{\circ}$ and 8.57$^{\circ}$-9.85$^{\circ}$, respectively. Development of strong cube texture of Ni-substrate made by powder metallurgy technique in our study is considered to be suitable for the application of YBCO coated conductors.

• Journal of the Korean institute of surface engineering
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• v.29 no.3
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• pp.163-175
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• 1996

Flame-sprayed Ni-based coatings are investigated in order to improve the thermal fatigue properties of gray cast iron in the presence of water spraying. The results of thermal cycling tests from room temperature to $1100^{\circ}C$ indicate that thermal fatigue endurance is increased in the order of Ni-20%Cr, NiCr-6%Al, and Ni-5%Al. The thermal fatigue failure is caused by the formation of iron oxides between the coating and the substrate and then the thermal fatigue cracks have propagated either along the brittle iron oxide layer resulting in the spatting of the coatings in case of Ni-5%Al and NiCr-6%Al coatings or to the substrate resulting in the whole specimen fracture in case of Ni-20%Cr coating. It seems that the most governing factor for thermal fatigue resistance is the thermal expansion coefficient difference between the coating and the substrate. Microstructural variations before and after the tests are also discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.6
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• pp.487-490
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• 2007

In this paper, the formation and thermal stability characteristics of Ni silicide using Ni-V alloy on Boron cluster ($B_{18}H_{22}$) implanted bulk and SOI substrate were examined in comparison with pure Ni for nano-scale CMOSFET. The Ni silicide using Ni-V alloy on $B_{18}H_{22}$ implanted SOI substrate after high temperature post-silicidation annealing showed the lower sheet resistance, no agglomeration interface image and lower surface roughness than that using pure Ni. The thermal stability of Ni silicide was improved by using Ni-V alloy on $B_{18}H_{22}$ implanted SOI substrate.

• Korean Journal of Metals and Materials
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• v.48 no.7
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• pp.660-666
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• 2010

30 nm thick Ni layers were deposited on a glass substrate by e-beam evaporation. Subsequently, 30 nm or 60 nm ${\alpha}-Si:H$ layers were grown at low temperatures ($<220^{\circ}C$) on the 30 nm Ni/Glass substrate by catalytic CVD (chemical vapor deposition). The sheet resistance, phase, microstructure, depth profile and surface roughness of the $\alpha-Si:H$ layers were examined using a four-point probe, HRXRD (high resolution Xray diffraction), Raman Spectroscopy, FE-SEM (field emission-scanning electron microscopy), TEM (transmission electron microscope) and AES depth profiler. The Ni layers reacted with Si to form NiSi layers with a low sheet resistance of $10{\Omega}/{\Box}$. The crystallinty of the $\alpha-Si:H$ layers on NiSi was up to 60% according to Raman spectroscopy. These results show that both nano-scale NiSi layers and crystalline Si layers can be formed simultaneously on a Ni deposited glass substrate using the proposed low temperature catalytic CVD process.

• Journal of the Korean institute of surface engineering
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• v.38 no.1
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• pp.1-6
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• 2005

Ni-15at.% W coatings with film thicknesses of 20-40 ㎛ were electroplated on a steel substrate, and their oxidation behavior was investigated at 700 and 800℃ in air. For comparison, a pure Ni coating and a bulk Ni were also oxidized. The Ni-15at.%W coating displayed the worst oxidation resistance, due to the formation of less-protective NiO, Fe₂O₃, NiFe₂O₄ and NiWO₄. The corrosion behavior Ni-15at.%W coatings electroplated on a steel substrate was similarly investigated at 700 and 800℃ in the Ar-l%SO₂ atmosphere. For comparison, the uncoated steel substrate was also corrosion-tested in the Ar-l %SO₂ atmosphere. Severe scale spallation and the internal corrosion of the steel that occurred in the uncoated substrate were not observed in the coated specimen. However, it seemed that the Ni-15at.%W coating cannot be a potential candidate as a sulfidation-resistant coating, due to the formation of less-protective NiO, NiS, WO₃ and NiWO₄.

• Korean Journal of Metals and Materials
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• v.47 no.5
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• pp.322-329
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• 2009

60 nm- and 20 nm-thick hydrogenated amorphous silicon (a-Si:H) layers were deposited on 200 nm $SiO_2/Si$ substrates using ICP-CVD (inductively coupled plasma chemical vapor deposition). A 10 nm-Ni layer was then deposited by e-beam evaporation. Finally, 10 nm-Ni/60 nm a-Si:H/200 nm-$SiO_2/Si$ and 10 nm-Ni/20 nm a-Si:H/200 nm-$SiO_2/Si$ structures were prepared. The samples were annealed by rapid thermal annealing for 40 seconds at $200{\sim}500^{\circ}C$ to produce $NiSi_x$. The resulting changes in sheet resistance, microstructure, phase, chemical composition and surface roughness were examined. The nickel silicide on a 60 nm a-Si:H substrate showed a low sheet resistance at T (temperatures) >$450^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate showed a low sheet resistance at T > $300^{\circ}C$. HRXRD analysis revealed a phase transformation of the nickel silicide on a 60 nm a-Si:H substrate (${\delta}-Ni_2Si{\rightarrow}{\zeta}-Ni_2Si{\rightarrow}(NiSi+{\zeta}-Ni_2Si)$) at annealing temperatures of $300^{\circ}C{\rightarrow}400^{\circ}C{\rightarrow}500^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate had a composition of ${\delta}-Ni_2Si$ with no secondary phases. Through FE-SEM and TEM analysis, the nickel silicide layer on the 60 nm a-Si:H substrate showed a 60 nm-thick silicide layer with a columnar shape, which contained both residual a-Si:H and $Ni_2Si$ layers, regardless of annealing temperatures. The nickel silicide on the 20 nm a-Si:H substrate had a uniform thickness of 40 nm with a columnar shape and no residual silicon. SPM analysis shows that the surface roughness was < 1.8 nm regardless of the a-Si:H-thickness. It was confirmed that the low temperature silicide process using a 20 nm a-Si:H substrate is more suitable for thin film transistor (TFT) active layer applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.22-23
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• 2005

In order to increase the critical current of coated conductor, highly Bi-axially textured substrates are required. Texture uniformity of substrate is also important to fabricate high quality superconducting coated conductor because the amount of current flow along the coated conductor is limited by the defects such as bad textured area. Therefore, we need to evaluate the distribution of texture of Ni substrate along the length before buffer layer deposition on Ni tape. R2R(reel-to-reel) XRD system was used to measure the texture of long Ni substrate continuously. $\theta-2\theta$ scan of 10 m long Ni tape was measured and indicates that some of Ni(111) planes equally remain on Ni(002) textured substrate. The results of continuous Ni(220) $\Phi$-scan indicate that average FWHM is 9$^{\circ}$ within $\pm$1.

• Journal of Magnetics
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• v.13 no.2
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• pp.53-56
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• 2008

This study proposes a simple nano-patterning process for the fabrication of magnetic nanodot arrays on a large area substrate. Ni nanodots were fabricated on a large area (4 inches in diameter) Si substrate using the soft lithographic technique using self-assembled surface micelles of Polystyrene-block-Poly(methyl methacrylate) (PS-b-PMMA) diblock copolymer formed at the air/water interface as a mask. The hexagonal array of micelles was successfully transferred to a Ni thin film on a Si substrate using the Langmuir-Blodgett technique. After ion-mill dry etching, a magnetic Ni nanodot array with a regular hexagon array structure was obtained. The Ni nanodot array showed in-plane easy axis magnetization and typical soft magnetic properties.