• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.8
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• pp.652-657
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• 1998

We have performed spin-spray ferrite plating of $Fe{_3}{-X}-Ni_XO_4$(X=0.17~0.26) films in the temperature region $T=80~95[^{\circ}C]$. A reaction solution and an oxidizing solution were supplied to a reaction chamber by supply pump. The solubility limit of Ni increases as the substrate temperature increase, from X=0.17 at $80[^{\circ}C]$ to X=0.26 at $95[^{\circ}C]$. All the films are polycrystalline with no preferential orientation, and the magnetization exhibits no definite anisotropy. Grain size in the films increases as X increases, reaching $0.87[\mu{m}]$ at X=0.26.

• 연구논문집
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• s.31
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• pp.127-133
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• 2001

In chromium electrodeposition, crack is inevitably accompanied by chromium layer. Behavior of crack formation and crack density were different from the plating conditions such as current density, temperature, waveform of applied current and so on. And cracks have an influence on the corrosion resistance of chromium deposit, because corrosion occurs through the network of cracks between deposit and substrate. Therefore, many researches have been achieved in order to remove the cracks in chromium deposit. Formation of double layers, Cr/Cr and Ni/Cr were investigated to increase corrosion resistance of chromium deposit in this study. As pretreatment prior to outer chromium coating, acid pickling and current control method were examined. Cracks in cross-section of each sample were observed with SEM and CASS(Copper modified acetic acid salt spray) test was performed to evaluate corrosion resistance. It was found that corrosion resistance of Cr/Cr and Ni/Cr double layers were superior to Cr or Ni single layer from the results of CASS test.

• Journal of Sensor Science and Technology
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• v.30 no.2
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• pp.71-75
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• 2021

Recently, transition-metal-based hydroxide materials have attracted significant attention in various electrochemical applications owing to their low cost, high stability, and versatility in composition and morphology. Among these applications, transition-metal-based hydroxides have exhibited significant potential in supercapacitors owing to their multiple redox states that can considerably enhance the supercapacitance performance. In this study, nanostructured Ni-Mn double hydroxide is directly grown on a conductive substrate using an electrodeposition method. Ni-Mn double hydroxide exhibits excellent electrochemical charge-storage properties in a 1 M KOH electrolyte, such as a specific capacitance of 1364 Fg-1 at a current density of 1 mAcm-2 and a capacitance retention of 94% over 3000 charge-discharge cycles at a current density of 10 mAcm-2. The present work demonstrates a scalable, time-saving, and cost-effective approach for the preparation of Ni-Mn double hydroxide with potential application in high-charge-storage kinetics, which can also be extended for other transition-metal-based double hydroxides.

• Proceedings of the Korean Society of Laser Processing Conference
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• 2000.11a
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• pp.23-26
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• 2000

This paper introduces a cleaning process for removing submicron-sized particles from NiP hard disk substrates by the liquid-assisted laser cleaning technique. Measurements of cleaning performance and time-resolved optical diagnostics are performed to analyze the physical mechanism of contaminant removal. The results reveal that nanosecond laser pulses are effective for removing the contaminants regardless of the wavelength and that a thermal mechanism involving explosive vaporization of liquid dominates the cleaning process.

• Proceedings of the Membrane Society of Korea Conference
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• 2008.05a
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• pp.154-157
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• 2008

• 한국초전도학회:학술대회논문집
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• v.15
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• pp.68-68
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• 2005

• Journal of the Korean Society for Heat Treatment
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• v.28 no.3
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• pp.121-125
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• 2015

GZO single layer, Ni buffered GZO(GZO/Ni), Ni intermediated GZO (GZO/Ni/GZO) and Ni capped GZO (Ni/GZO) films were prepared on poly-carbonate (PC) substrates by RF and DC magnetron sputtering without intentional substrate heating and then the influence of the Ni (2 nm thick) thin film on the optical, electrical and structural properties of GZO films were investigated. As deposited GZO single layer films show the optical transmittance of 81.3% in the visible wavelength region and a resistivity of $1.0{\times}10^{-2}{\Omega}cm$, while GZO/Ni/GZO trilayer films show a lower resistivity of $6.4{\times}10^{-4}{\Omega}cm$ and an optical transmittance of 74.5% in this study. Based on the figure of merit, it can be concluded that the intermediated Ni thin film effectively enhances the opto-electrical performance of GZO films for use as transparent conducting oxides in flexible display applications.

• Korean Journal of Materials Research
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• v.27 no.2
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• pp.94-99
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• 2017

Dinickel-silicide $(Ni_2Si)/glass$ was employed as a counter electrode for a dye-sensitized solar cell (DSSC) device. $Ni_2Si$ was formed by rapid thermal annealing (RTA) at $700^{\circ}C$ for 15 seconds of a 50 nm-Ni/50 nm-Si/glass structure. For comparison, $Ni_2Si$ on quartz was also prepared through conventional electric furnace annealing (CEA) at $800^{\circ}C$ for 30 minutes. XRD, XPS, and EDS line scanning of TEM were used to confirm the formation of $Ni_2Si$. TEM and CV were employed to confirm the microstructure and catalytic activity. Photovoltaic properties were examined using a solar simulator and potentiostat. XRD, XPS, and EDS line scanning results showed that both CEA and RTA successfully led to tne formation of nano $thick-Ni_2Si$ phase. The catalytic activity of $CEA-Ni_2Si$ and $RTA-Ni_2Si$ with respect to Pt were 68 % and 56 %. Energy conversion efficiencies (ECEs) of DSSCs with $CEA-Ni_2Si$ and $RTA-Ni_2Si$catalysts were 3.66 % and 3.16 %, respectively. Our results imply that nano-thick $Ni_2Si$ may be used to replace Pt as a reduction catalytic layer for a DSSCs. Moreover, we show that nano-thick $Ni_2Si$ can be made available on a low-cost glass substrate via the RTA process.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1597-1599
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• 2004

Carbon nanotubes (CNTs) are grown on the TiN-coated silicon substrate by varying the thickness of Ni and Invar426 catalyst layers at 600$^{\circ}C$ using an inductively coupled plasma-chemical vapor deposition (ICP-CVD). The Ni and Invar426 catalysts are formed using an RF magnetron sputtering system with various deposition periods. Characterization using various techniques, such as FESEM, HRTEM, and Raman spectroscopy, shows that the physical dimension as well as the crystal quality of grown CNTs are strongly changed by the kind and thickness of catalyst materials. It is also seen that Ni catalysts would be more desirable for vertical-alignment of CNTs compared with Invar426 catalysts. However, the CNTs using Invar426 catalysts display much better electron emission capabilities than those using Ni catalysts. The physical reason for all the measured data obtained are discussed to establish the relationship between structural properties and field-emissive properties of CNTs.

• Journal of the Korean Magnetics Society
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• v.4 no.2
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• pp.100-105
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• 1994

Ni-Fe thin films are deposited on the corning glass substrate by means of RF magnetron sputtering system In order to investigate the dependence of the prorerties of Ni-Fe thin films on the film thickness, ferromagnetic reson¬ance spectrum has been examined. The effective magnetization $M_{eff}$ is constant for all samples, while the exchange stiffness constant A increases with the film thickness. A tendency that spectroscopic splitting factor g increases with the sample thickness, we expect that the increase of the contribution of the orbital motion to the magnetic moment as a reason for it.