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Influence of Ni Thin Film Position on the Opto-electrical Properties of GZO Films

Ni 박막 위치에 따른 GZO 투명전도막의 전기광학적 물성 변화

  • Mun, Hyun Joo (School of Materials Science and Engineering, University of Ulsan) ;
  • Jeon, Jae-Hyun (School of Materials Science and Engineering, University of Ulsan) ;
  • Gong, Tae-Kyung (School of Materials Science and Engineering, University of Ulsan) ;
  • Seo, Ki-Woong (School of Materials Science and Engineering, University of Ulsan) ;
  • Oh, Jeong Hyun (School of Materials Science and Engineering, University of Ulsan) ;
  • Kim, Sun-Kyung (Dongkook Ind. Co., Ltd.) ;
  • Choi, Dong-Hyuk (Dongkook Ind. Co., Ltd.) ;
  • Son, Dong-Il (Dongkook Ind. Co., Ltd.) ;
  • Kim, Daeil (School of Materials Science and Engineering, University of Ulsan)
  • Received : 2015.04.02
  • Accepted : 2015.04.17
  • Published : 2015.05.31

Abstract

GZO single layer, Ni buffered GZO(GZO/Ni), Ni intermediated GZO (GZO/Ni/GZO) and Ni capped GZO (Ni/GZO) films were prepared on poly-carbonate (PC) substrates by RF and DC magnetron sputtering without intentional substrate heating and then the influence of the Ni (2 nm thick) thin film on the optical, electrical and structural properties of GZO films were investigated. As deposited GZO single layer films show the optical transmittance of 81.3% in the visible wavelength region and a resistivity of $1.0{\times}10^{-2}{\Omega}cm$, while GZO/Ni/GZO trilayer films show a lower resistivity of $6.4{\times}10^{-4}{\Omega}cm$ and an optical transmittance of 74.5% in this study. Based on the figure of merit, it can be concluded that the intermediated Ni thin film effectively enhances the opto-electrical performance of GZO films for use as transparent conducting oxides in flexible display applications.

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References

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