• Journal of Sensor Science and Technology
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• v.24 no.4
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• pp.224-227
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• 2015

In this study, 2 wt% Cr-doped Ni thin films were deposited using DC sputtering on a bare Si substrate using a 4 inch target at room temperature. In order to obtain ultrathin films from Cr-doped Ni thin films with high electrical properties and uniform surface, the micro-structure and electrical properties were investigated as a function of deposition time. For all deposition times, the Cr-doped Ni thin films had low average resistivity and small surface roughness. However, the resistivity of the Cr-doped Ni thin films at various ranges showed large differences for deposition times below 90 s. From the results, 120 s is considered as the appropriate deposition time for Cr-doped Ni thin films to obtain the lowest resistivity, a low surface roughness, and a small difference of resistivity. The Cr-doped Ni thin films are prospective materials for microdevices as ultrathin film electrodes.

• Applied Science and Convergence Technology
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• v.24 no.6
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• pp.215-218
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• 2015

A pyroelctric properties of Ni(x)-doped PMNT systems were analyzed. Modified PMNT samples were prepared using the columbite structure method. Pyroelectric current, polarization, dielectric constant and dissipation factor of Ni-doped PMNT samples were measured as a function of temperature. By adding a small amount of NiO, pyroelectricity of PMNT is increased. Unlike the normal $ABO_3$ ferroelectric, Ni-doped PMNT showed properties for relaxor ferroelectric of causing the successive phase transition over a wide temperature. The optimum conditions for obtaining compositions with improvement ferroelectric properties are a nominal addition of 0.02 mole% Ni. Also, Ni-doped PMNT ferroelectric showed excellent pyroelectric figures of merit in the vicinity of room temperature. The pyroelectric coefficient ($0.00524C/m^2K$ at $25^{\circ}C$) and figures of merit ($F_v{\sim}0.039m^2/C$ and $F_d{\sim}0.664{\times}10^{-4}Pa^{-1/2}$) of composition PMNT with 0.02 mole% Ni are comparable to the earlier reports on lead-type pyroelectrics.

• Journal of Magnetics
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• v.13 no.4
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• pp.128-131
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• 2008

We have investigated the electronic structures and magnetic properties of both undoped and doped bcc Ni using the full-potential linearized augmented plane wave (FLAPW) band method. A ferromagnetic ground state is obtained at the equilibrium volume of bcc Ni. When the system is under strain, the nonmagnetic ground state is stabilized. When the Ni is doped with V, the $Ni_{16-x}V_x$ material loses its magnetic properties when x > 2. We have also discussed the possible superconducting properties of $Ni_{16-x}V_x$.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.193.1-193.1
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• 2014

This study was to investigate the electronic structure and optical properties of Na doped into NiO thin film using XPS and REELS. The films were grown by electron beam evaporation with varying the annealing temperature. The relationship between the electrical characteristics with the local structure of NiO thin films was also discussed. The x-ray photoelectron results showed that the Ni 2p spectra for all films consist of Ni 2p3/2 which indicate the presence of Ni-O bond from NiO phase and for the annealed film at temperature above $200^{\circ}C$ shows the coexist Ni oxide and Ni metal phase. The reflection electron energy loss spectroscopy spectra showed that the band gaps of the NiO thin films were slightly decreased with Na-doped into films. The Na-doped NiO showed relatively low resistivity compared to the undoped NiO thin films. In addition, the Na-doped NiO thin films deposited at room temperature showed the best properties, such as a p-type semiconducting with low electrical resistivity of $11.57{\Omega}.cm$ and high optical transmittance of ~80% in the visible light region. These results indicate that the Na doping followed by annealing process plays a crucial in enhancing the electrical and optical properties of NiO thin films. We believe that our results can be a good guide for those growing NiO thin films with the purpose of device applications, which require deposited at room temperature.

• Transactions of the Korean hydrogen and new energy society
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• v.16 no.2
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• pp.136-141
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• 2005

Li-doped NiO was synthesized by molten salt method. $LiNO_3$-LiOH flux was used as a source for Li doping. $NiCl_2$ was added to the molten Li flux and then processed to make the Li-doped NiO material. Li:Ni ratios were maintained from 5:1 to 30:1 during the synthetic procedure and the Li doping amount of synthesized materials were found between 0.086-0.190 as a Li ion to Ni ion ratio. Li doping did not change the basic cubic structural characteristics of NiO as evidenced by XRD studies, however the lattice parameter decreased from 0.41769nm in pure NiO to 0.41271nm as Li doping amount increased. Hydrogen gas sensors were fabricated using these materials as thick films on alumina substrates. The half surface of each sensor was coated with the Pt catalyst. The sensor when exposed to the hydrogen gas blended in air, heated up the catalytic surface leaving rest half surface (without catalyst) cold. The thermoelectric voltage thus built up along the hot and cold surface of the Li-doped NiO made the basis for detecting hydrogen gas. The linearity of the voltage signal vs $H_2$ concentration was checked up to 4% of $H_2$ in air (as higher concentrations above 4.65% are explosive in air) using Li doped NiO of Li ion/Ni ion=0.111 as the sensor material. The response time T90 and the recovery time RT90 were less than 25 sec. There was minimum interference of other gases and hence $H_2$ gas can easily be detected.

• Journal of the Korean Ceramic Society
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• v.48 no.2
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• pp.134-140
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• 2011

To study the effect of color development of Ni-doped willemite blue pigments, five batches of compositions were prepared and fired at $1350^{\circ}C$/hold for 1 h. When Ni was substituted for ZnO by 0.03 mole the optimum result were obtained. Then they were fired at $1300^{\circ}C$ and held for 1, 2, 4 and 6 h respectively for the purpose sake. XRD, Raman spectroscopy, FT-IR, UV-vis were used to analyze the results of experiment. The substitution of 0.03mole Ni for Zn was most optimum and which produced good willemite at the temperature of $1300^{\circ}C$, holding for 6 h. In ceramic arts, cobalt has been used for blue coloring, in most cases, despite of its high cost. If the low cost Ni-doped willemite blue pigments supplies for them with stable and multiple shades of blue pigment, using NiO at high temperature, it would provide various blues for ceramic wares.

• Journal of the Korean Ceramic Society
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• v.23 no.6
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• pp.52-58
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• 1986

$Pb(Zr_{0.525} Ti_{0.475})O_3$ piezoelectric ceramics both unmodified and doped with NiO were prepared by the conventional oxide techniques using sintering temperature from 900 to to 125$0^{\circ}C$. The difference in densification process between unmodified and NiO doped PZT ceramics was studied by shrinkage vs. firing temperatures and it was caused by increasing defect concentration in calcining process of NiO doped PZT ceramics. And nickel oxide solubility limit for $Pb(Zr_{0.525} Ti_{0.475})O_3$ ceramics is shown to be at the range from 0.2wt% to 0.5wt% from this defect model micro-structures dielectric and piezolectric properties of Nio doped PZT ceramics.

• Bulletin of the Korean Chemical Society
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• v.32 no.7
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• pp.2227-2232
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• 2011

The new metrology, Advanced Poly-silicon Ultra-Trace Profiling (APUTP), was developed for measuring bulk Cu and Ni in heavily boron-doped silicon wafers. A Ni recovery yield of 98.8% and a Cu recovery yield of 96.0% were achieved by optimizing the vapor phase etching and the wafer surface scanning conditions, following capture of Cu and Ni by the poly-silicon layer. A lower limit of detection (LOD) than previous techniques could be achieved using the mixture vapor etching method. This method can be used to indicate the amount of Cu and Ni resulting from bulk contamination in heavily boron-doped silicon wafers during wafer manufacturing. It was found that a higher degree of bulk Ni contamination arose during alkaline etching of heavily boron-doped silicon wafers compared with lightly boron-doped silicon wafers. In addition, it was proven that bulk Cu contamination was easily introduced in the heavily boron-doped silicon wafer by polishing the wafer with a slurry containing Cu in the presence of amine additives.

• Journal of the Korean Ceramic Society
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• v.28 no.8
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• pp.593-602
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• 1991

Al2O3 and NiO-doped Al2O3 powders were prepared from the ethanol solution of Al (NO3)3$.$9H2O and Ni(NO3)2$.$6H2O by spray pylolysis method using two-fluid nozzle. As a result of spraying test with 0.3 mol/{{{{ iota }} concentration starting solution, mean droplet sizes varied with 8.99∼9.69$\mu\textrm{m}$ and those standard deviation were 4.57∼5.12. As-prepared powders which were synthesized at 1000$^{\circ}C$ have spherical shape, sizes of 0.1∼3.0$\mu\textrm{m}$ and specific surface area of 22.34∼24.20㎡/g. Most powders consisted of {{{{ gamma }}-Al2O3 phase and transforned into ${\alpha}$-A;2O3 phase by calcination at 1100$^{\circ}C$ for 1 hr. NiO-doped Al2O3 sintered bodies had better sinterability than those of pure Al2O3 and 0.3 wt% NiO-doped Al2O3 had near theoretical density and dense microstructure.

• Journal of Sensor Science and Technology
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• v.25 no.3
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• pp.218-222
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• 2016

Pure and V-doped NiO porous structures were prepared by the evaporation-induced surfactant assembly and subsequent pyrolysis of assembled structures, and their gas sensing characteristics were investigated. Pure NiO porous structures showed negligible gas responses (S=$R_g/R_a$, $R_g$: sensor resistance in analytic gas; $R_a$: sensor resistance in air) to 5 ppm trimethylamine (S=1.17) as well as other interfering gases such as ethanol, p-xylene, toluene, benzene and formaldehyde (S=1.02-1.13). In contrast, the V-doped NiO porous structures exhibited a high response and selectivity to 5 ppm trimethylamine (S=14.5) with low cross-responses to other interfering gases (S=4.0-8.7) at $350^{\circ}C$. The high gas response of V-doped NiO porous structures to trimethylamine was explained by electronic sensitization, that is, the increase in the chemoresistive variation due to the decrease in the hole concentration. The enhanced selectivity to trimethylamine was discussed in relation to the interaction between basic trimethylamine gas and acidic V catalysts.