• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.07a
• /
• pp.182-182
• /
• 1999

The chemisorption effect of CO on the Ni/Cu(001) surface was investigated using LEED(Low Energy Electron Diffraction) and EELS(Electron Energy Loss Spectrscopy0 under the UHV conditions. after mounting the Cu(001) single crystal in the UHV chamber (base pressure 1$\times$10-10Torr), a clean surface was obtained after a few cycles of repeated Ar+ ion sputtering and annealing at about 40$0^{\circ}C$. The epitaxial thin Ni films were formed on the Cu(001) by evaporation from 99.999% Ni block. The pseudomorphic growth and the orderness of the thin Ni films were monitored by c(2$^{\circ}C$2) LEED pattern. CO adlayers on Ni epitaxial thin films were prepared by dosing pure CO has through a leak valve. After CO adsorpton at room temperature, two pairs of peaks were observed by EELS, whose relative intensities are changed as the film thickness is varied and time is elapsed. These two pair of peaks are likely related to different bonding sites (-top and bridge sites) of C-Ni as well as C-O vibration. Experimental results and qualitative interpretation of the spectra wille be discussed. The possibility of using EELS in combination with probe species (CO) to investigate the nature of thin film growth is mentioned. We will report the experimental result of O2 dosage on Ni film and interaction of CO and O2.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.10
• /
• pp.763-766
• /
• 2010

By improving the conducting process of metal source/drain (S/D) in direct contact with the channel, schottky barrier metal-oxide-semiconductor field effect transistors (SB MOSFETs) reveal low extrinsic parasitic resistances, offer easy processing and allow for well-defined device geometries down to the smallest dimensions. In this work, we investigated the arrhenius plots of the SB MOSFETs with different S/D schottky barrier (SB) heights between simulated and experimental current-voltage characteristics. We fabricated SB MOSFETs using difference S/D metals such as Cr (${\Phi}_{Cr}$ ~4.5 eV) and Ni (${\Phi}_{Ni}$~5.2 eV), respectively. Schottky barrier height (${\Phi}_B$) of the fabricated devices were measured to be 0.25~0.31 eV (Cr-S/D device) and 0.16~0.18 eV (Ni-S/D device), respectively in the temperature range of 300 K and 475 K. The experimental results have been compared with 2-dimensional simulations, which allowed bandgap diagram analysis.

• Bulletin of the Korean Chemical Society
• /
• v.32 no.9
• /
• pp.3239-3244
• /
• 2011

Dinuclear Ni(II)-thiophene halides, which contain linear bridging thienylenes, trans,trans-[$(PR_3)_2$(X)Ni-Y-Ni(X)$(PR_3)_2$] {X = Cl, Br; $H_2Y$ = 5,5'-dichloro-2,2'-bithiophene ($H_2bth$); $H_2tth$ = 5,5"-dichloro-2,2':5',2''-terthiophene ($H_2tth$)} were prepared by the oxidative addition of dihalobithiophene ($H_2bth$) or dihaloterthiophene ($H_2tth$) to [$Ni(COD)_2$] in the presence of tertiary phosphines. Subsequent reactions of $NaN_3$ with the dinuclear Ni(II)-thiophene chlorides gave the corresponding Ni(II)-azido complexes, trans,trans-[$(PR_3)_2(N_3)$Ni-Y-Ni$(N_3)(PR_3)_2$], whose reactivity toward trimethylsilyl pseudohalides such as trimethylsilyl isothiocyanates and cyanides was investigated. In addition, the reaction of trans-[$BrNi(PEt_3)_2-C_4H_2S-C_4H_2S$-CHO], a thienyl Ni(II) complex containing a terminal aldehyde group, with phosphonium ylide was examined.

• Journal of the Korean Magnetics Society
• /
• v.5 no.5
• /
• pp.570-574
• /
• 1995

Magnetoresistance of NiFeCo/Cu/NiFeCo/FeMn uncoupled exchange biased sandwiches has been studied. The magnetoresistance change ratio, ${\Delta}R/R_{s}$ showed 4.1 % at a saturation field as low as 11 Oe in $Si/Ti(50\;{\AA})/NiFeCo(70\;{\AA})/Cu(23\;{\AA})/NiFeCo(70\;{\AA})/FeMn(150\;{\AA})/Cu(50\;{\AA})$ spin valve structure. In this system, the magnetoresistance was affected by interlayer material and thickness. When Ti and Cu were used as the interlayer material in this structure, maximum magnetoresistance change ratio were 0.32 % and 4.1 %, respectively. 6.1 % MR ratio was obtained in $Si/Ti(50\;{\AA})/NiFeCo(70\;{\AA})/Cu(15\;{\AA})/NiFeCo(70\;{\AA})/FeMn(150\;{\AA})/Cu(50\;{\AA})$ spin valve structure. The magnetoresistance change ratio decreased monotonically as the interlayer thickness increased. It was found that the exchange bias field exerted by FeMn layer to the adjacent NiFeCo layer was ~25 Oe, far smaller than that reported in NiFe/Cu/NiFe/FeMn spin valve structure(Dieny et. al., ~400 Oe). The relationship between the film texture and exchange anisotropy ha been examined for spin valve structures with Ti, Cu, or non-buffer layer.

• Bulletin of the Korean Chemical Society
• /
• v.7 no.2
• /
• pp.102-105
• /
• 1986

Samples with the nominal composition of $Co_{9-x}M_xS_8$(M = Ni, Rh, Ru, and Fe) were prepared, and their magnetic properties were measured. X-ray diffraction analysis showed that small amount of the elements Ni, Rh, and Fe could be incorporated into $Co_9S_8$ forming a homogeneous ${\pi}$-phase, whereas the Ru-incorporated sample could not be prepared in a single phase. The lattice parameter was observed to increase as other elements were incorporated into $Co_9S_8$. Samples incorporated with the elements of Ni, Rh, and Ru showed Pauli-paramagnetism while the Fe-incorporated sample exhibited weak ferromagnetism. The values of magnetic susceptibility for the Ni, Rh, Ru-incorporated samples were nearly the same as that of pure $Co_9S_8$.

• Korean Journal of Materials Research
• /
• v.7 no.11
• /
• pp.1018-1023
• /
• 1997

본 연구에서는 3C-SiC의 ohmic 접합에 대하여 그 전기적 특성과 미세구조의 상관관계에 대하여 분석하였다. 표준사진식각 공정을 통하여 ohmic접합 금속으로서 Ni을 진공증착시켜 일련의 TLM패턴으로 열처리에 따르는 전류-전압 특성을 조사하였고 TEM, SEM, AES, EDS를 사용하여 Ni/SiC 계면에 대한 미세구조, 화학적 특성을 분석하였다. 열처리 온도와 시간을 통한 thermal budget이 증가함에 따라서 접촉저항이 감소되었으며 그 값은 $10^{-2}$-$10^{-4}$Ω$\textrm{cm}^2$의 범위에 속하였다. EDS와 AES를 통하여 7$50^{\circ}C$이상의 열처리 후 silicide(NiSi$_{2}$)의 주변에 carbon층이 형성되는 것을 확인하였으며, 열처리 온도가 증가함에 따라서 island형 silicide의 크기가 조밀해지며 SiC와의 접착성이 향상됨을 알 수 있었다. Ni/3C-SiC ohmic 접합의 전기적 특성은 계면에 생성되는 silicide와 carbon의 형성거동에 의하여 결정되는 것으로 믿어진다.

• Journal of Advanced Marine Engineering and Technology
• /
• v.25 no.2
• /
• pp.345-345
• /
• 2001

This paper was studied on the characteristics of galvanic corrosion and its protection on heat exchanger tube plate in the sea water. In this paper, behavior of pitting corrosion of Ni-al bronze connected with Ti tube was measured af flow velocity of 0 m/s and 2.4 m/s. To protect galvanic corrosion, the protection characteristics of Ni-Al bronze connected with Ti tube by Zn-base alloys galvanic anode and hexagonal nylon insert was investigated. Main results obtained asre al follows: 1) The galvanic corrosion of Ni-Al bronze connected with Ti-tube is more active than single Ni-al bronze. 2) As the circuit resistance increase under the cathodic protection employing Zn-base alloys galvanic anode, Ni-al bronze connected with Ti tube is cathodically unpolarized. 3) The corrosion of Ni-Al bronze connected with Ti tube by nylon insert controls approximately 73% than not nylon insert.

• Communications of the Korean Mathematical Society
• /
• v.9 no.2
• /
• pp.419-421
• /
• 1994

Recently Hong and Oh [5] provided a fairly general weak law for arrays in the following form: Let {(X/sub ni/, l ≤ i ≤ k/sub n/), n ≥ l}, k/sub n/ → ∞ as n → ∞, be an array of random variables on (Ω, F, P) and set F/sub nj/ = σ{X/sub ni/, 1 ≤ i ≤ j}, 1 ≤ j ≤ k/sub n/, n ≥ 1, and F/sub n0/ = {ø, Ω}, n ≥ 1. Suppose that (equation omitted) aP { X/sub ni/ /sup p/ ＞ a} → 0 as a → ∞ uniformly in n for some 0 < p < 2. Then S/sub n//(equation omitted) → 0 in probability as n → ∞ where S/sub n/ = (equation omitted)(X/sub ni/ - E(X/sib ni/I( X/sub ni/ /sub p/ ≤ k/sub n/) F/sub n,i-l/)). In this note, we will prove the following result under the same domination condition of Hong and Oh [5].(omitted)

• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2004.10a
• /
• pp.276-279
• /
• 2004

The factors affecting Ni-Co alloy electroforming were investigated to determine the optimum bath composition and electroplating parameters, like pH, temperature, and current density, suitable for high speed fabrication of a micro mold with longer lifetime. To obtain alloy deposits having uniform thickness and composition, electroplating parameters were finely tuned with home-made electroforming apparatus. Ni-Co alloy deposits had linearly increased Co with $Co^{2+}$ ion concentration in electroplating bath, and showing $412H_v$ of Victors hardness at $23wt\%$ of Co content. For Ni-Co alloy, sulfonate and diol related organic additives were very effective to alleviate its residual stress and surface roughness. The maximum deposition rate was $106{\mu}m/hr$ at 10ASD and the tensile strength of alloy deposit was 2 times larger than that of Ni only case.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.12
• /
• pp.1140-1143
• /
• 2006

We report on the fabrication of P3HT-based thin-film transistors (TFTs) for liquid crystal display that consist of $NiO_x$, poly-vinyl phenol (PVP), and Ni for the source-drain (S/D) electrodes, gate dielectric layer, and gate electrode, respectively The $NiO_x$ S/D electrodes of which the work function is well matched to that of P3HT are deposited on a P3HT channel by electron-beam evaporation of NiO powder. The maximum saturation current of our P3HT-based TFT is about $15{\mu}A$ at a gate bias of -30 V showing a high field effect mobility of $0.079cm^2/Vs$ in the dark, and the on/off current ratio of our TFT is about $10^5$. It is concluded that jointly adopting $NiO_x$ for the S/D electrodes and PVP for gate dielectric realizes a high-quality P3HT-based TFT.