• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.10
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• pp.495-499
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• 2004

Characteristics of ohmic Ni/Si/Ni contacts to n-type 4H-SiC are investigated systematically. The ohmic contacts were formed by annealing Ni/Si/Ni sputtered sequentially The annealings were performed at 950℃ using RTP in vacuum ambient and N₂ ambient, respectively. The specific contact resistivity(p/sub c/), sheet resistance(R/sub s/), contact resistance (R/sub c/) transfer length(L/sub T/) were calculated from resistance(R/sub T/) versus contact spacing(d) measurements obtained from TLM(transmission line method) structure. While the resulting measurement values of sample annealed at vacuum ambient were p/sub c/ = 3.8×10/sup -5/Ω㎠, R/sub c/ = 4.9 Ω and R/sub T/ = 9.8 Ω, those of sample annealed at N₂ ambient were p/sub c/ = 2.29×10/sup -4/Ω㎠, R/sub c/ = 12.9 Ω and R/sub T/ = 25.8 Ω. The physical properties of contacts were examined using XRD 3nd AES. The results showed that nickel silicide was formed on SiC and Ni was migrated into SiC. This result indicates that Ni/Si/Ni ohmic contact would be useful in high performance electronic devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.157-158
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• 2013

Organic solar cell was fabricated using one-pot deposition of a mixture of NiO nanoparticles, P3HT and PCBM. In the presence of NiO, the photovoltaic performance was slightly increased comparing to that of the device without NiO. When $TiO_2$ thin films with a thickness of 2~3 nm was prepared on NiO nanoparticles using atomic layer deposition, the power conversion efficiency was increased by a factor 2.5 with respect to that with bare NiO. Moreover, breakdown voltage of the film consisting of NiO, P3HT, and PCBM on indium tin oxide was increased by more than 1 V in the presence of $TiO_2$-shell on NiO nanoparticles. It is evidenced that S atoms of P3HT can be oxidized on NiO surfaces, and $TiO_2$-shell on NiO nanoparticles. It is evidenced that S atoms of P3HT can be oxidzed on NiO surfaces, and $TiO_2$ shell heavily reduced oxidation of S at oxide/P3HT interfaces. Oxidized S atoms can most likely act as carrier generation sites and recombination centers within the depletion region, decreasing breakdown voltage and performance of organic solar cells. Our result shows that fabrication of various core-shell nanostruecutres of oxides by atomic layer deposition with controlled film thickness can be of potential importance for fabricating highly efficient organic solar cells.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1095-1097
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• 1995

We studied on Solide Oxide Fuel cells, have some advantages of higher power density and less cost for power-supply. Recently, Ni-YSZ materials are used as anode of SOFC. If its contents of Ni is higher then its electronic conductivity is higher. And If it has inverse tendency then its ionic conductivity become higher. So in this experiments, we investicated the optimum content of Ni, by testing expansion coefficient, impedance characteristics, overvoltage.

• 연구논문집
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• s.33
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• pp.183-190
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• 2003

Today, We have used many electronic equipment such as computer, TV, cellular phone and so on. These equipment radiate a large amount of EMI(Electromagnetic interference) which is occurred trouble of airplane, medical equipment, communicate equipment, and especially, human health. So, Ni mesh fabrication for EMI shielding by continuous electroforming process was investigated. Continuous electroforming apparatus was made by means of rotating cathode drum. And We investigated the characteristics of two types of Ni electroforming solution. One was made by laboratory and the other was produced by M cooperation. The grain size increased with increasing current density and bath temperature, and decreasing rotating speed of cathode drum. EDX results indicate that the Ni mesh electroformed by the KIMM solution is composed of pure Ni. But the Ni mesh electroformed by the M cooperation solution has Ni and S element. The incorporation of S element in the Ni mesh has a profoundly effect on mechanical properties such as hardness, internal stress and so on.

• 한국전기화학회:학술대회논문집
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• 2001.06a
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• pp.225-230
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• 2001

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.81-84
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• 2004

The NiCr is an important material for present thin-film resistor application owing to its low TCR and thermal stability. In this work, the NiCr thin films were deposited on coming glass substrate by reactive magnetron sputtering and the annealing at temperatures range from 300 to $500^{\circ}C$ for 20 min in vacuum. X-ray, AFM, $R_s$(surface leakage current) have been used to study the structural and electrical properties of the NiCr thin films. The high precision NiCr thin films resistor with TCR(temperature coefficient of resistance) of less then $10\;ppm/^{\circ}C$ was obtained under in in-situ annealing at $300^{\circ}C$ on Cr buffer layer substrate. It is clear that the NiCr thin-films resistor electrical properties are low TCR related with it's annealing and buffer layer condition. NiCr thin film resistor having a good thermal stability and low TCR properties are expected for the application to the dielectric material of passive component.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.63-63
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• 2018

본 연구는 플라즈마 전해 산화 (PEO) 및 RF (Radio Frequency) 스퍼터링을 이용한 2 단계 접근법에 의해 처리 된 MgO / Ni-Cr의 고내식성 이중층 코팅을 제조하기 위해 수행되었다. 이를 위해 $100mA/cm^2$ 교류 조건에서 180 s PEO를 한 후 150W 에서 900s RF 스퍼터링을 수행 하였다. 코팅의 형태는 주사전자현미경(SEM)을 사용하여 관찰되었으며 코팅의 상조성은 X-선 회절(XRD) 및 X-선 광전자 분광법(XPS)을 사용하여 분석하였다. SEM 이미지는 스퍼터링 된 Ni-Cr이 크랙의 대부분과 미세한 미세 공극을 덮어 코팅 결함이 감소함을 보여 주었다. 따라서, 코팅 된 샘플의 거칠기 값은 스퍼터링 공정 후에 감소되었다. 단면 이미지로부터, 스퍼터링된 코팅층은 낮은 두께 때문에 거의 검출되지 않았다. EDS, XRD 및 XPS를 사용한 조성 분석은 금속 상태의 형태로 Ni 및 Cr 존재를 나타내었고 XPS에서 NiCr2O4 부동태 피막이 검출되었다. MgO / Ni-Cr 이중층 코팅의 내부식성은 MgO / Ni-Cr 이중층을 가진 샘플의 금속 원소와 비교하여 우수한 부식 특성을 나타내는 전위 역학적 분극 시험 및 전기 화학적 임피던스 분광법으로 평가 하였다.

• Journal of the Korean institute of surface engineering
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• v.30 no.4
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• pp.248-254
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• 1997

The sulfidation behavior of a sputter-deposited amorphous coating of 69.0%Nb-16.9Ni-11.9%Al-2.2%Si (at.%) has been investigated as a funtion of temperature.(973-1173K) in pure sulfur pressure of 0.01atm. The sulfidation kinetics of the casting obyed the parabolic rate low over the whole temperature ranges studied. The stlfidation rate increased with the temperature, as expected. The sulfide scale, the composition of which was $Al_2S_3,\;NbS_2,\;Ni_{3-x}S_2\;and\;FeCrS_4$, formed on the amorphous coating was primarily bilayered. Both the outer fastgrowing non-protective 4Al_2S_3$scale and the inner slowly-growing protective $NbS_2$,/TEX> scale and the inner slowly-growing protective $NbS_2$ scale had some Fe and Cr dissolution, which evidently came from the base substrate alloy of stainless steel type 304. Belows the coating, Kirkendall void formation was noticed. Nevertheless, a dramatic improvement of sulfidation resistance was achieved by sputter-depositing Nb-2 Ni-Al-Si layer on the stainless steel 304.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.310-313
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• 2000

In this study, the Au/Ni and Au/Ni/Si/Ni layers prepared by electron beam evaporation were used to form ohmic contacts on p-type GaN. Before rapid thermal annealing, the current-voltage(I-V) characteristic of Au/Ni and Au/Ni/Si/Ni contact on p-type GaN film shows non-ohmic behavior. A Specific contact resistance as 3.4$\times$10$^{-4}$ Ω-$\textrm{cm}^2$ was obtained after 45$0^{\circ}C$-RTA. The Schottky barrier height reduction may be attributed to the presence of Ga-Ni and Ga-Au compounds, such as Ga$_4$Ni$_3$, Ga$_4$Ni$_3$, and GaAu$_2$ at the metal - semiconductor interface. The mixing behaviors of both Ni and Au have been studied by using X-ray photoelectron spectroscopy. In addition, X-ray diffraction measurements indicate that the Ni$_3$N, NiGa$_4$, Ni$_2$Si, and Ni$_3$Si$_2$ Compounds were formed at the metal-semiconductor interface.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.3 s.32
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• pp.47-53
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• 2004

Eutectic Au-20Sn(compositions are all in weight percent unless specified otherwise) solder alloys were soldered on the Ni substrate with various time and temperature. The composition, phase identification and morphology of intermetallic compounds(IMC) at the interface were examined using Scanning Electron Microscopy(SEM). There were two types of IMCs, $(Au,Ni)_3Sn_2$ and $(Au,Ni)_3Sn$ at the interface. The transition in morphology of $(Au,Ni)_3Sn_2$ has been observed at $300{\~}400^{\circ}C$. The morphology transition of $(Au,Ni)_3Sn_2$ is due to the decrease of enthalpy of formation of $(Au,Ni)_3Sn_2$ phase and has been explained well by Jackson's parameter with temperature. Because the number of diffusion channel is different at each soldering temperature, IMC thickness is nearly same at all temperature.