• Korean Journal of Metals and Materials
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• v.48 no.11
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• pp.1041-1046
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• 2010

The reactions between a Sn-3.0Ag-0.5Cu solder alloy and electroless Ni/electroless Pd/immersion Au (ENEPIG) surface finishes with various Pd layer thicknesses (0, 0.05, 0.1, 0.2, $0.4{\mu}m$) were examined for the effect of the Pd layer on the massive spalling of the $(Cu,Ni)_6Sn_5$ layer during reflow at $235^{\circ}C$. The thin layer deposition of an electroless Pd (EP) between the electroless Ni ($7{\mu}m$) and immersion Au ($0.06{\mu}m$) plating on the Cu substrate significantly retarded the massive spalling of the $(Cu,Ni)_6Sn_5$ layer during reflow. Its retarding effect increased with an increasing EP layer thickness. When the EP layer was thin (${\leq}0.1{\mu}m$), the retardation of the massive spalling was attributed to a reduced growth rate of the $(Cu,Ni)_6Sn_5$ layer and thus to a lowered consumption rate of Cu in the bulk solder during reflow. However, when the EP layer was thick (${\geq}0.2{\mu}m$), the initially dissolved Pd atoms in the molten solder resettled as $(Pd,Ni)Sn_4$ precipitates near the solder/$(Cu,Ni)_6Sn_5$ interface with an increasing reflow time. Since the Pd resettlement requires a continuous Ni supply across the $(Cu,Ni)_6Sn_5$ layer from the Ni(P) substrate, it suppressed the formation of $(Ni,Cu)_3Sn_4$ at the $(Cu,Ni)_6Sn_5/Ni(P)$ interface and retarded the massive spalling of the $(Cu,Ni)_6Sn_5$ layer.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.3
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• pp.332-337
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• 2006

We prepared 100 nm-thick CoNi composite silicide on a 70 nm-thick polysilicon substrate. Composite silicide laye.s were formed by rapid thermal annealing(RTA) at the temperatures of $700^{\circ}C,\;900^{\circ}C,\;1000^{\circ}C$ for 40 seconds. A Focused ion beam (FIB) was used to make nano-patterns with the operation range of 30 kV and $1{\sim}100$ pA. We investigated the change of thickness, line width, and the slope angle of the silicide patterns by FIB. More easily made with the FIB process than with the conventional polycide process. We successfully fabricated sub-100nm etched patterns with FIB condition of 30kv-30pA. Our result implies that we may integrate nano patterns with our newly proposed CoNi composite silicides.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.157-157
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• 2008

As the minimum feature size of semiconductor devices scales down to nano-scale regime, ultra shallow junction is highly necessary to suppress short channel effect. At the same time, Ni-silicide has attracted a lot of attention because silicide can improve device performance by reducing the parasitic resistance of source/drain region. Recently, further improvement of device performance by reducing silicide to source/drain region or tuning the work function of silicide closer to the band edge has been studied extensively. Rare earth elements, such as Er and Yb, and Pd or Pt elements are interesting for n-type and p-type devices, respectively, because work function of those materials is closer to the conduction and valance band, respectively. In this paper, we increased the work function between Ni-silicide and source/drain by using Pd stacked structure (Pd/Ni/TiN) for high performance PMOSFET. We demonstrated that it is possible to control the barrier height of Ni-silicide by adjusting the thickness of Pd layer. Therefore, the Ni-silicide using the Pd stacked structure could be applied for high performance PMOSFET.

• Nuclear Engineering and Technology
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• v.48 no.3
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• pp.773-777
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• 2016

A betavoltaic battery was prepared using radioactive $^{63}Ni$ attached to a three-dimensional single trenched P-N absorber. The optimum thickness of a $^{63}Ni$ layer was determined to be approximately $2{\mu}m$, considering the minimum self-shielding effect of beta particles. Electroplating of radioactive $^{63}Ni$ on a nickel (Ni) foil was carried out at a current density of $20mA/cm^2$. The difference of the short-circuit currents ($I_{sc}$) between the pre- and post-deposition of $^{63}Ni$ (16.65 MBq) on the P-N junction was 5.03 nA, as obtained from the I-V characteristics. An improved design with a sandwich structure was provided for enhancing performance.

• Journal of Welding and Joining
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• v.35 no.3
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• pp.1-6
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• 2017

The effect of metal turnover (MTO) of electroless Ni plating bath on the brittle fracture behavior of electroless nickel electroless palladium immersion gold (ENEPIG)/Sn-3.0wt%Ag-0.5wt%Cu(SAC305) solder joint was evaluated in this study. The MTOs of the electroless Ni for the ENEPIG surface finish were 0 and 3. As the MTO increased, the interfacial IMC thickness increased. The brittle fracture behavior of the ENEPIG/SAC305 solder joint was evaluated with high speed shear (HSS) test. The HSS strength decreased with increasing the MTO of the electroless Ni bath. The brittle fracture increased with increasing the shear speed of the HSS test. The percentage of the brittle fracture for the 3 MTO sample was much higher than that for the 0 MTO sample.

• Journal of Electrochemical Science and Technology
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• v.11 no.2
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• pp.155-164
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• 2020

Here we report our preliminary results about nickel phosphide (Ni-P) electroless coating on the surface of cellulose paper (CP) and its feasibility as the anode for lithium (Li) batteries. In particular, CP can act as a flexible skeleton to maintain the mechanical structure, and the Ni-P film can play the roles of both the anode substrate and the active material in Li batteries. Ni-P films with different P contents were plated uniformly and compactly on the microfiber strands of CP. When they were tested as the anode for Li battery, their theoretical capacity per physical area was comparable to or higher than hypothetical pure graphite and P film electrodes having the same thickness. After the large irreversible capacity loss in the first charge/discharge process, the samples showed relatively reversible charge/discharge characteristics. All samples showed no separation of the plating layer and no detectable micro-cracks after cycling. When the charge cut-off voltage was adjusted, their capacity retention could be improved significantly. The electrochemical result was just about the same before and after mechanical bending with respect to the overall shape of voltage curve and capacity.

• Journal of radiological science and technology
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• v.38 no.4
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• pp.347-353
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• 2015

The purpose of this study is to suggest proper additional filtration by comparisons patient dose and image quality among additional filters in digital chest tomosynthesis (DTS). We measured the effective dose, dose area product (DAP) by changing thickness of Cu, Al and Ni filter to compare image quality by CD curve and SNR, CNR. Cu, Al and Ni exposure dose were similar thickness 0.3 mm, 3 mm and 0.3 mm respectively. The exposure dose using filter was decreased average about 33.1% than non filter. The DAP value of 0.3 mm Ni were decreased 72.9% compared to non filter and the lowest dose among 3 filter. The effective dose of 0.3 mm Ni were decreased 48% compared to 0.102 mSv effective dose of non filter. At the result of comparison of image quality through CD curve there were similar aspect graph among Cu, Al and Ni. SNR was decreased average 19.07%, CNR was average decreased 18.17% using 3 filters. In conclusion, Ni filtration was considered to be most suitable when considered comprehensive thickness, character, sort of filter, dose reduction and image quality evaluation in DTS.

• Journal of the Korean Vacuum Society
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• v.16 no.5
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• pp.311-321
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• 2007

We have researched the chemical defects of NiO ultrathin films grown on Ag(001) by x-ray photoelectron spectroscopy. In particular, O 1s and Ni 2p spectra were analyzed consistently with control film thickness, $O_2\;and\;H_2O$ partial pressure and substrate temperature. As a result, we could identify each chemical defect. In addition, we suggest the optimum growth condition to minimize the defect density.

• Journal of the Korean Magnetics Society
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• v.10 no.5
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• pp.196-202
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• 2000

Top synthetic spin valves with structure Ta/NiFe/CoFe/Cu/CoFe(P1)/Ru/CoFe(P2)/FeMn/Ta on Si(100) substrate with natural oxide were prepared by dc magnetron sputtering system, and investigated on the magnetoresistance properties and effective exchange bias field. As the thickness of FeMn increased above 150 $\AA$, MR ratio was decreased due to the current shunting effect. As the thickness of free layer decreased below 40$\AA$, MR ratio was reduced rapidly. In case of 40 $\AA$ thick of free layer, spin valve film with a structure Si(100)/Ta(50 $\AA$)/NiFe(27 $\AA$)/CoFe(13 $\AA$)/Cu(26 $\AA$)/CoFe(30 $\AA$)/Ru(7 $\AA$)/CoFe(15 $\AA$)/FeMn(100 $\AA$)/Ta(50 $\AA$) exhibited maximum MR ratio of 7.5 % and an effective exchange bias field of 600 Oe, respectively. Thickness difference dependence in this synthetic spin valve structure on effective exchange field was investigated and interpreted by the analytical method. It should be noted that thickness increase of CoFe(P 1) and decrease of CoFe(P2) in synthetic antiferromagnet leaded to the decrease in effective exchange bias field by experimentally and analytically.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.4
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• pp.413-417
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• 2023

Gallium Oxide (Ga₂O₃) is preferred as a material for next generation power semiconductors. The Ga₂O₃ should solve the disadvantages of low thermal resistance characteristics and difficulty in forming an inversion layer through p-type ion implantation. However, Ga₂O₃ is difficult to inject p-type ions, so it is being studied in a heterojunction structure using p-type oxides, such as NiO, SnO, and Cu₂O. Research the lateral-type FET structure of NiO/Ga₂O₃ heterojunction under the Gate contact using the Sentaurus TCAD simulation. At this time, the VG-ID and VD-ID curves were identified by the thickness of the Epi-region (channel) and the doping concentration of NiO of 1×10¹⁷ to 1×10¹⁹ cm-3. The increase in Epi region thickness has a lower threshold voltage from -4.4 V to -9.3 V at I_D = 1×10^-8 mA/mm, as current does not flow only when the depletion of the PN junction extends to the Epi/Sub interface. As an increase of NiO doping concentration, increases the depletion area in Ga₂O₃ region and a high electric field distribution on PN junction, and thus the breakdown voltage increases from 512 V to 636 V at I_D =1×10^-3 A/mm.