• 제목/요약/키워드: Ni-$TiO_2$

검색결과 474건 처리시간 0.027초

Sol-gel법에 의한 $PbZrO_3-PbTiO_3-Pb(Ni_{1/3}Nb_{2/3})O_3$박막의 물리적 특성 (Physical properties of $PbZrO_3-PbTiO_3-Pb(Ni_{1/3}Nb_{2/3})O_3$ thin films by sol-gel method)

  • 임무열;구경완;김성일;유영각
    • E2M - 전기 전자와 첨단 소재
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    • 제9권10호
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    • pp.991-1000
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    • 1996
  • PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb$_{2}$3/O$_{3}$) (PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol ratio of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20), #4(40:40:20), #5(40:50:10), #6(35:45:20) and #7(30:50:20) respectively. The spin-coated PZT-PNN films were heat-treated at 350.deg. C for decomposition of residual organics, and were sintered from 450.deg. C to 750.deg. C for crystallization. The substrates, such as Pt and Pt/TiN/Ti/TiN/Si were used for the spin coating of PZT PNN films. The perovskite phase was observed in the PZT-PNN films heat-treated at 500.deg. C. The crystalline of the PZT-PNN films was optimized at the sintering of 700.deg. C. By the result of AES analysis, It is confirmed that the films of TiN/Ti/TiN was a good diffusion barrier and that co-diffusion into the each films was not observed.

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전기도금법을 이용한 나노 산화티타늄 니켈 복합도금에 관한 연구 (Electrodeposition of Nano TiO2 Powder Dispersed Nickel Composite Coating)

  • 박소연;이재호
    • 마이크로전자및패키징학회지
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    • 제19권4호
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    • pp.65-69
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    • 2012
  • 복합도금이란 금속 도금층을 매트릭스로 세라믹, 폴리머, 나노분말과 같은 입자를 공석시켜 경도의 향상, 내마모성, 내식성, 자기 윤활성 등의 특성을 갖는 복합 금속피막을 얻어내는 방법으로 본 연구에서는 나노입자로 $TiO_2$를 사용하여 니켈과 함께 복합도금층을 형성하였다. $TiO_2$를 첨가시킨 복합전기도금을 통해 표면저항성 향상, 광분해 효과를 기대할 수 있다. 용액조건 중 pH 변화에 따른 zeta전위를 측정하였다. 초음파처리를 통한 물리적인 방법으로 용액 중 나노분말의 응집을 최소화한 후 $TiO_2$-Ni 복합도금을 실시하였다. 최적의 도금 조건으로 $50^{\circ}C$에서 pH 3.5, 전류밀도 $40mA/cm^2$에서 가장 효과적이었으며 Ti의 함량은 $50^{\circ}C$에서 15-20 at.%로 확인되었다.

수처리용 Ti/IrO2/SnO2-Sb-Ni 전극의 전기화학적 특성평가 (Electrochemical Properties of Ti/IrO2/SnO2-Sb-Ni Electrode for Water Treatment)

  • 양소영
    • 한국환경과학회지
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    • 제29권10호
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    • pp.943-949
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    • 2020
  • In this work, we prepared a heterojunction anode with a surface layer of SnO2-Sb-Ni (SSN) on a Ti/IrO2 electrode by thermal decomposition to improve the electrochemical activity of the Ti/IrO2 electrode. The Ti/IrO2-SSN electrode showed significantly improved electrochemical activity compared with Ti/IrO2. For the 0.1 M NaCl and 0.1 M Na2SO4 electrolytes, the onset potential of the Ti/IrO2-SSN electrode shifted in the positive direction by 0.1 VSCE and 0.4 VSCE, respectively. In 2.0-2.5 V voltages, the concentration in Ti/IrO2-SSN was 2.59-214.6 mg/L Cl2, and Ti/IrO2 was 0.55-49.21 mg/L Cl2. Moreover, the generation of the reactive chlorine species and degradation of Eosin-Y increased by 3.79-7.60 times and 1.06-2.15 times compared with that of Ti/IrO2. Among these voltages, the generation of the reactive chlorine species and degradation of Eosin-Y were the most improved at 2.25 V. Accordingly, in the Ti/IrO2-SSN electrode, it can be assumed that the competitive reaction between chlorine ion oxidation and water oxidation is minimized at an applied voltage of 2.25V.

$(Zr_{0.65}, Sn_{0.35})Ti_{1.04}O_{4.04}$세라믹스의 NiO첨가에 따른 고주파 유전 특성 (Microwave dielectric properties according to the additions of NiO to $(Zr_{0.65}, Sn_{0.35})Ti_{1.04}O_{4.04}$ ceramics)

  • 윤중락;권정열;이헌용;김경용
    • E2M - 전기 전자와 첨단 소재
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    • 제8권5호
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    • pp.594-600
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    • 1995
  • Dielectric properties at microwave frequencies of ($Zr_{0.65}$, $Sn_{0.35}$) $Ti_{1.04}$ $O_{4.04}$ ceramics with additives, NiO as an agent to improve dielectric properties and $B_{2}$ $O_{3}$ as a firing agent were investigated. When 0.5 - 1.5 wt% of NiO is add, the grain growth is inhibited and the shape of the grain is uniformed, Dielectric constant(Fr) and bulk density are increased with raising amount of NiO at sintering temperature of 1330 - 1360.deg. C, but the temperature coefficient of resonant frquency(.epsilon.$_{r}$) decreased gradually as the NiO content increased. The value of Qx $f_{o}$ was increased as the amount of NiO was increased in the range of 0.5 to 1.0 wt% and the Qx $f_{o}$, was decreased slightly with raising sintering temperature. With NiO of 1.0 wt% and at sintering temperature of 1360.deg. C, this ceramics was found to have excellent microwave properties of .epsilon.$_{r}$=37.8, Qx $f_{o}$ = 48.600 and .tau.$_{f}$ = 7 ppm/.deg. C.C.. C.. C.C.. C.. C.

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씨앗발아 및 발아지수에 근거한 나노입자 독성평가 (Toxicity Assessment of Nanopariticles Based on Seed Germination and Germination Index)

  • 구본우;공인철
    • 대한환경공학회지
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    • 제36권6호
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    • pp.396-401
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    • 2014
  • 나노물질은 다양한 분야에 널리 사용되고 있다. 본 연구에서는 Lactuca(상추)와 Raphanus(알타리무) 씨앗의 발아와 발아지수에 금속산화물 나노입자(CuO, NiO, $Fe_2O_3$, $Co_3O_4$, $TiO_2$, ZnO)가 미치는 영향을 조사하였다. 용액상 노출에서 CuO가 가장 큰 영향을 나타내었으며, 발아와 발아지수의 $EC_{50}$는 각 0.46 mg/L와 0.37%로 조사되었다. 씨앗 이용 식물독성 측정에서 상추가 알타리무보다 나노입자 노출에 대해 더욱 민감한 반응을 나타내었다. 일반적으로 나노입자의 씨앗발아와 발아지수에 근거한 영향은 다음의 순서로 조사되었다: CuO > ZnO >NiO > $TiO_2$, $Fe_2O_3$, $Co_3O_4$. 특히 $TiO_2$, $Fe_2O_3$$Co_3O_4$는 최대 노출 농도 1,000 mg/L 농도에서도 뚜렷한 영향을 나타내지 않았다.

NiO-Doped Pb(Ni$_{1}$3/Nb$_{2}$3/)O$_3$-PbTiO$_3$-PbZr$_3$-O세라믹스의 전기 및 기계적 특성에 관한 연구 (Electrical and mechanical properties of NiO doped Pb(Ni$_{1}$3/Nb$_{2}$3/)O$_3$-PbTiO$_3$-PbZrO$_3$-ceramics)

  • 나은상;김윤호;최성철
    • 한국결정성장학회지
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    • 제10권3호
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    • pp.245-251
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    • 2000
  • Pb($(Ni_{1/3}Nb_{2/3})O_3-PbTiO_3-PbZrO_3$세라믹스에서 NiO첨가에 따른 유전, 압전 및 기계적 특성의 변화를 연구하였다. Columbite precursor법을 사용하여 분말을 제조 후 공기중에서 $1100^{\circ}C$~$1250^{\circ}C$의 온도로 2시간 소결하여 시편을 제조하였다. $1150^{\circ}C$이하 온도에서 소결한 시편에서는 NiO를 1 mol% 첨가시까지 유전상수와 압전상수가 증가하였으나 첨가량이 그 이상 증가함에 따라 감소하였는데 이는 NiO가 소결조제 역할을 한 것으로 보여진다. 그러나 $1200^{\circ}C$ 이상 온도에서 소결한 시편에서는 NiO 첨가량 증가에 따라 유전상수와 전기기계결합계수가 감소하였으며, 기계적품질계수는 증가하였다. 경도 및 파괴인성은 1 mol% 첨가시 최대 값을 보이다가 그 이후 감소하였다. NiO 첨가 PNN-PT-PZ 세라믹스의 전기적 및 기계적 특성은 결정립크기, 소결밀도 및 2차상의 양 등의 미세구조적 요소와 긴밀한 관계가 있음을 보여준다.

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$Fe_2O_3$가 첨가된 $0.4Pb(Ni_{1/3}Nb_{2/3})O_3-0.6Pb(Zr_xTi_{1-x})O_3$ 세라믹스에서의 PZ/PT비 변화에 따른 유전 및 압전 특성 (Dielectric and Piezoelectric Properties of $Fe_2O_3$-Added $0.4Pb(Ni_{1/3}Nb_{2/3})O_3-0.6Pb(Zr_xTi_{1-x})O_3$ Ceramics with Variatior of Zr/Ti Ratio)

  • 백종후;임은경;김세기;이미재;지미정;최병현
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.338-339
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    • 2005
  • 본 연구에서는 $Fe_2O_3$를 첨가한 $Pb(Ni_{1/3}Nb_{2/3})O_3-Pb(Zr_xTi_{1-x})O_3$ 세라믹스에서 Zr/Ti 비 변화에 따른 소결 및 압전, 유전특성을 조사하였다. $0.4Pb(Ni_{1/3}Nb_{2/3})O_3-0.6Pb(Zr_xTi_{1-x})O_3$+0.25Wt% $Fe_2O_3$ 계에서 Zr/(Ti+Zr)비(x)를 0.39에서 0.42까지 변화시킨 조성을 1100 - $1250^{\circ}C$ 온도에서 2시간 소결하여 이의 결정구조 및 미세조직을 분석하였고, 압전, 유전 특성 및 RAINBOW 액츄에이터로의 응용을 조사하였다. $1150^{\circ}C$에서 소결한 0.405 조성(x)에서 유전상수(${\varepsilon}r$) = 4669, 전기기계결합계수(kp) = 0.75, 압전상수($d_{33}$) = 810 pC/N의 우수한 특성 값을 나타내었으며, 닥터블레이드법에 의해 RAINBOW 액츄에이터를 제작하여 변위특성을 조사하였다.

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Pb(Ni1/3Nb2/3)O3-PbTiO3-PbZrO3계의 삼방정, 정방정 및 상경계조성에서의 MnO2 첨가에 따른 유전 및 압전특성에 비교 (Comparisons on Dielectric and Peizoelectric Proeprties of Rhombohedral, Tetragonal and Morphotropic Phase Boundary in Pb(Ni1/3Nb2/3)O3-PbTiO3-PbZrO3 System with MnO2 Addition)

  • 전구락;손정호;김정주;조상희
    • 한국세라믹학회지
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    • 제25권5호
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    • pp.488-494
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    • 1988
  • Effects of MnO2 addition on themicrostructure, dielectric and piezoelectric properties of Rhombohedral, Tetragonal and Morphotropic phase boundary(MPB) in Pb(Ni1/3Nb2/3)O3-PbTiO3-PbZrO3 system were investigated and respectively the amount of MnO2 addition was 0, 0.2, 0.5, 1.0, 3.0wt%. In the tetragonal region, compared with the Rhombohedral and Morpotropic phase boundary, Mechanical quality factor(Qm), Curie temperature(Tc) and Dissipation factor were promoted by addition of MnO2. According to the results of the microstructure, dielectric and piezoelectric properties, the solid solution range of MnO2 addition in this system was 0.2-0.5wt%.

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니켈 폴리사이드 게이트의 열적안정성과 C-V 특성 (Thermal Stability and C- V Characteristics of Ni- Polycide Gates)

  • 정연실;배규식
    • 한국재료학회지
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    • 제11권9호
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    • pp.776-780
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    • 2001
  • $SiO_2$ and polycrystalline Si layers were sequentially grown on (100) Si. NiSi was formed on this substrate from a 20nm Ni layer or a 20nm Ni/5nm Ti bilayer by rapid thermal annealing (RTA) at $300~500^{\circ}C$ to compare thermal stability. In addition, MOS capacitors were fabricated by depositing a 20nm Ni layer on the Poly-Si/$SiO_2$substrate, RTA at $400^{\circ}C$ to form NiSi, $BF_2$ or As implantation and finally drive- in annealing at $500~800^{\circ}C$ to evaluate electrical characteristics. When annealed at $400^{\circ}C$, NiSi made from both a Ni monolayer and a Ni/Ti bilayer showed excellent thermal stability. But NiSi made from a Ni/Ti bilayer was thermally unstable at $500^{\circ}C$. This was attributed to the formation of insignificantly small amount of NiSi due to suppressed Ni diffusion through the Ti layer. PMOS and NMOS capacitors made by using a Ni monolayer and the SADS(silicide as a dopant source) method showed good C-V characteristics, when drive-in annealed at $500^{\circ}C$ for 20sec., and$ 600^{\circ}C$ for 80sec. respectively.

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Ca[Ti1-x(Ni1/3Nb2/3)x]O3 세라믹스의 저온소결 및 마이크로파 유전특성 (Low Temperature Sintering and Microwave Dielectric Properties of Ca[Ti1-x(Ni1/3Nb2/3)x]O3 Ceramics)

  • 이영규;김효태;남중희;김종희;백운규
    • 한국세라믹학회지
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    • 제43권1호
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    • pp.55-61
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    • 2006
  • The microwave dielectric properties and low temperature sintering of $Ca[Ti_{1-x}(Ni_{1/3}Nb_{2/3})_x]O_3$ system were investigated at the sintering temperature $1,200\~1,350^{\circ}C$. The density and quality factors $(Q{\times}f)$ increased while dielectric constants slightly decreased with the decrease of Ti. The dielectric constant, quality factor, and temperature coefficient of resonance frequency $(\tau_f)$ were 64, 17,000 GHz, and $-9.1\;ppm/^{\circ}C$ respectively, when $CaTi_{1/2}(Ni_{1/3}Nb_{2/3})_{1/2}O_3$ ceramics were sintered at $1,300^{\circ}C$ for 4 h. $2Li_2O-B_2O_3$ was added to $CaTi_{1/2}(Ni_{1/3}Nb_{2/3})_{1/2}O_3$ to decrease the sintering temperature for LTCC application. The microwave dielectric properties of the samples sintered at $925^{\circ}C$ for 2 h with the addition of $6\;wt\%\;2Li_2O-B_2O_3$ were $\varepsilon_r=48.7,\;Q{\times}f=8,460\;GHz$, and $\tau_f=+5.6ppm/^{\circ}C$. Compatibility test of the composition with silver electrode shows no reaction with silver electrode, implying the feasibility as a high-K LTCC material.