• 한국진공학회지
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• 제12권4호
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• pp.269-274
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• 2003

The electrical, optical and structural properties of ZnNiO thin _ films deposited on Si substrates using rf-magnetron sputtering method have been investigated before and after the thermal annealing processes. The crystallinity of the ZnNiO thin film become degraded with increasing the Ni contents. This is mainly because the lattice of the thin film was expanded due to the oxygen-deficient conditions. Concerning the electrical properties of the thin film, the carrier concentration increases ($6.81\times10^{14}\textrm{cm}^{-2}$) and Hall mobility decreases (36.3 $\textrm{cm}^2$/Vㆍs) with higher doping concentration of Ni. However, the carrier concentration and Hall mobility became low ($1.10\times10^{14}\textrm{cm}^2$ and high (209.6 $\textrm{cm}^2$/Vㆍs), respectively, after the thermal annealing process at $1000 ^{\circ}C$. We also observed a strong luminescene center peaking at 546 nm in photoluminescence spectra, which was caused by a deep level center in the ZnO band gap with oxygen deficient ZnNiO structure.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.725-728
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• 2001

We have fabricated thin films using the DC/RF magnetron sputtering of 74wt%Ni-l8wt%Cr-4wt%Al-4wt%Cu alloy target and studied the effect of the process parameters on the electrical properties for low TCR(Temperature Coefficient of Resistance) films. In sputtering process, pressure, power and substrate temperature, are varied as controllable parameter. The films are annealed to 400$^{\circ}C$ in air and nitrogen atmosphere. The sheet resistance, TCR of the films increases with increasing annealing temperature. It abruptly increased as annealing temperature increased over 300$^{\circ}C$ in air atmosphere. From XRD, it is found that these results are due to the existence of NiO on film surface formed by annealing. As a results of them, TCR can be controlled by variation of sputter process parameter and annealing of thin film.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 초전도 자성체 연구회
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• pp.50-54
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• 2003

The output characteristics of thin film NiO/NiFe bilayered magnetoresistive device have been measured as a function of the direction of external magnetic field. Each layer was fabricated by rf magnetron sputtering method, and especially, the under layer, NiO, was fabricated under the in-situmagnetic field of about 1000Oe. The magnetoresistive devices were designed with the angle of 45degree between the direction of current of the device pattern and the induces magnetic field in the NiO film layer. The output of the devices had a good linearity when the devices were placed on the external magnetic field perpendicular to induced field direction and also 45 degree with the currenr path direction.

• Journal of Magnetics
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• 제7권1호
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• pp.9-13
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• 2002

The dependences of microscopic magnetic domain on film thickness in unidirectional and isotropic exchange-coupled NiO/NiFe bilayers were investigated by magnetic force microscopy to better understand for exchange biasing. As NiO thickness increases, microscopic domain structure of unidirectional biased film changed to smaller and more complicated domains. However, for isotropic-coupled film a new cross type domain appeared with out-of plane magnetization orientation. The density of the cross domain is proportional to exchange biasing fields and the fact that the domain was originated by the strongest exchange coupling region was confirmed from the dynamic domain configuration during a magnetization cycle.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.557-558
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• 2006

The mechanical properties of micro-hardness and internal stress of Ni-Fe alloy thin film made by electrodeposition method have been measured as a function of bath composition and current density. And also the microstructure of $200{\AA}$ Ni-Fi nanowires made using anodic aluminum oxide(AAO) templates by electrodeposition method have been observed by SEM as a function of ultrasonic treatment time and bath composition.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.243.2-243.2
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• 2015

We report a high-performing nanoscale NiO thin film grown by thermal oxidation of sputtered Ni film. The structural, physical, optical and electrical properties of nanoscale NiO were comprehensively investigated. A quality transparent heterojunction (NiO/ZnO) was formed by large-area applicable sputtering deposition method that has an extremely low saturation current of 0.1 nA. Considerable large rectification ratio of more than 1000 was obtained for transparent heterojunction device. Mott-Schottky analyses were applied to develop the interface of NiO and ZnO by establishing energy diagrams. Nanoscale NiO has the accepter carrier concentration of the order of 1018 cm-3. Nanoscale NiO Schottky junction device properties were comprehensively studied using room temperature impedance spectroscopy.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1399-1401
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• 2001

We studied on structure and resistivity, temperature coefficient of resistance (TCR) of NiCr and NiCr-N thin resistor films prepared by do reactive magnetron sputtering of NiCr target. It is found that while pure NiCr films are polycrystalline, an addition of nitrogen (N2/(Ar+N2) ratios are between 10% and 70%) into the film is changed into amorphous structure and sheet resistance of films is increased. Measurement temperatures of TCR are ratios of $5^{\circ}C$ per 15min from $25^{\circ}C$ to $130^{\circ}C$. TCR for an as-deposited NiCr-N thin film is varied from positive to negative.

• 한국전기전자재료학회논문지
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• 제14권1호
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• pp.74-83
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• 2001

In this study, the optimum structure of a magnetic thin film inductor was designed for application of DC-DC converters. The Ni$\sub$81/Fe$\sub$19/ (at%) alloy was selected as a high-frequency($\geq$MHz) magnetic thin film magnetron sputtering system. As-deposited NiFe thin films show similar magnetic properties compared to bulk NiFe alloys, indicating that they have a good film quality. The optimum design of dolenoid-type magnetic thin film inductors was performed utilizing a Maxwell computer simulator (Ansoftt HFSS V7.0 for PC) and parameters obtained from the magnetic properties of magnetic core materials selected. The high-frequency characteristics of the inductance(L) and quality factor(Q) obtained for the designed inductors through simulation agreed well with those obtained by theoretical calculations, confirming that the simulated result is realistic. The optimum structure of high-performance (Q$\geq$60, L = 1${\mu}$H, efficiency $\geq$90%), high-frequency ($\geq$5MHz), and solenoid-type magnetic thin film inductors was designed successfully.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.275-278
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• 2000

We were fabricated of NiCr thin film resistors(TFR) on A1$_2$O$_3$(99.5%) substrates by dc magnetic sputtering system. The characteristics of electrical resistance (Sheet resistance & Temperature-Coefficient of the resistance-value:TCR) by annealing condition and reactive gas on the resistors were studied.

• 한국진공학회지
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• 제19권6호
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• pp.475-482
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• 2010

NiO 산화물 타겟을 이용한 RF 마그네트론 스퍼터 방법으로 유리 기판 위에 NiO 박막을 Ar 가스만을 사용하여 증착하였으며, 증착 온도에 따라 NiO 박막 특성에 미치는 영향을 조사하였다. XRD 측정으로부터 증착된 박막의 결정구조는 $200^{\circ}C$ 이하에서 (111) 면의 우선 배향성으로 보이다가 $350^{\circ}C$ 이상에서 (220) 면의 우선 배향성을 가지는 다결정 입방구조임을 확인하였다. NiO 박막의 전기적 특성의 변화는 기판의 온도가 $200^{\circ}C$까지는 $10^5\;{\Omega}cm$의 부도체에 가까운 높은 비저항을 보였고 기판의 온도가 $300^{\circ}C$ 이상에서는 $10^{-1}{\sim}10^{-2}{\Omega}cm$의 도체의 특성을 보이는 낮은 비저항으로 감소하는 Mott-Insulator Transition(MIT) 현상을 관측하였다. NiO 박막 내의 증착 온도 변화에 따른 ${\sim}10^7$ 정도의 큰 비저항 변화를 결정성, 결정립의 변화 및 밴드 갭의 변화 등으로 설명하였다.