• 제목/요약/키워드: Ni film

검색결과 866건 처리시간 0.034초

Effects of Mo on the Passive Films Formed on Ni-(15, 30)Cr-5Mo Alloys in pH 8.5 Buffer Solution

  • Jang, Hee-Jin;Kwon, Hyuk-Sang
    • 전기화학회지
    • /
    • 제12권3호
    • /
    • pp.258-262
    • /
    • 2009
  • The composition and semiconducting properties of the passive films formed on Ni- (15, 30)Cr-5Mo alloys in pH 8.5 buffer solution were examined. The depth concentration profile of passive films formed on Ni-(15, 30)Cr-5Mo in pH 8.5 buffer solution showed that Mo enhances the enrichment of Cr. The Mott-Schottky plot for the passive film on Ni-(15, 30)Cr- 5Mo closely resembled that for the film on Cr, whereas those for the less Cr-enriched film on Mo-free alloys showed similar behavior to that for the film on Ni. The acceptor density was reduced by increasing Cr content in Ni-(15, 30)Cr-(0, 5)Mo alloys, but addition of Mo considerably increased the acceptor density.

Effects of Ru Co-Sputtering on the Properties of Porous Ni Thin Films

  • Kim, Woo-Sik;Choi, Sun-Hee;Lee, Hae-Weon;Kim, Joo-Sun
    • 한국세라믹학회지
    • /
    • 제43권11호
    • /
    • pp.746-750
    • /
    • 2006
  • NiO films and Ru co-sputtered NiO films were deposited by reactive magnetron sputtering for micro-solid oxide fuel cell anode applications. The deposited films were reduced to form porous films. The reduction kinetics of the Ru doped NiO film was more sluggish than that of the NiO film, and the resulting microstructure of the former exhibited finer pore networks. The possibility of using the films for the anodes of single chamber micro-SOFCs was investigated using an air/fuel mixed environment. It was found that the abrupt increase in the resistance is suppressed in the Ru co-sputtered film, as compared to undoped film.

Cu-Ni 박막 스트레인 게이지를 이용한 다이어프램식 압력 센서-I: Cu-Ni 박막 스트레인 게이지 개발 (Diaphragm-Type Pressure Sensor with Cu-Ni Thin Film Strain Gauges-I: Development of Cu-Ni Thin Film Strain Gauges)

  • 민남기;이성래;김정완;조원기
    • E2M - 전기 전자와 첨단 소재
    • /
    • 제10권9호
    • /
    • pp.938-944
    • /
    • 1997
  • Cu-Ni thin film strain gauges for diaphragm-type pressure sensors were developed. Thin films of Cu-Ni alloys of various compositions were deposited onto glass and stainless steel substrates by RF magnetron sputtering. The effects of composition substrate temperature Ar partial pressure and aging on the electrical properties of Cu-Ni film strain gauges in the thickness range 500~2000$\AA$ are discussed. The maximum resistivity(95.6 $\mu$$\Omega$cm) is obtained from 53wt%Cu-47wt%Ni films while the temperature coefficient of resistance(TCR) becomes minimum(25.6ppm/$^{\circ}C$). The gauge factor is about 1.9.

  • PDF

RF 마그네트론 스퍼터링에 의한 NiO 박막 증착시 산소 유량비가 박막의 결정 배향성에 미치는 영향 (Effects of Oxygen Flow Ratio on the Crystallographic Orientation of NiO Thin Films Deposited by RE Magnetron Sputtering)

  • 류현욱;최광표;노효섭;박용주;박진성
    • 한국세라믹학회지
    • /
    • 제41권2호
    • /
    • pp.106-110
    • /
    • 2004
  • NiO 산화물 타겟을 이용한 RF 마그네트론 스퍼터로 상온에서 Si(100) 기판 위에 NiO 박막을 증착시켜, 스퍼터 가스의 산소 유량비가 NiO 박막의 결정 배향성과 표면 형상에 미치는 영향을 조사하였다. Ar 가스에서 증착된 NiO 박막은 높은결정화도와 (100)면의 우선 배향성을 나타내었으나, $O_2$ 가스에서 증착된 경우에는 (111)면의 우선 배향성을 보였으며 그 증착속도도 감소하였다. 스퍼터 가스의 $O_2$ 함량에 따른 NiO 박막의 결정성과 우선배향성 변화에 대한 요인을 고찰하였으며, 박막의 표면 형상과 거칠기의 변화를 조사하였다.

무기막 NiOx의 정렬 패턴 전사를 이용한 액정의 배향 특성 연구 (A Study on the Liquid Crystal Orientation Characteristics of the Inorganic NiOx Film with Aligned Nanopattern Using Imprinting Process)

  • 오병윤
    • 한국전기전자재료학회논문지
    • /
    • 제32권5호
    • /
    • pp.357-360
    • /
    • 2019
  • We demonstrate an alignment technology using an imprinting process on an inorganic NiOx film. The aligned nanopattern was fabricated on a silicon wafer by laser interference lithography. The aligned nano pattern was then imprinted onto the sol-gel driven NiOx film using an imprinting process at an annealing temperature of $150^{\circ}C$. After the imprinting process, parallel grooves had been formed on the NiOx film. Atomic force microscopy and water contact angle measurements were performed to confirm the parallel groove on the NiOx film. The grooves caused liquid crystal alignment through geometric restriction, similar to grooves formed by the rubbing process on polyimide. The liquid crystal cell exhibited a pretilt angle of $0.2^{\circ}$, which demonstrated homogeneous alignment.

Comparison of Deposition Behavior and Properties of Cyanide-free Electroless Au Plating on Various Underlayer Electroless Ni-P films

  • Kim, Dong-Huyn
    • 한국표면공학회지
    • /
    • 제55권4호
    • /
    • pp.202-214
    • /
    • 2022
  • Internal connections between device, package and external terminals for connecting packaging and printed circuit board are normally manufactured by electroless Ni-P plating followed by immersion Au plating (ENIG process) to ensure the connection reliability. In this study, a new non-cyanide-based immersion and electroless Au plating solutions using thiomalic acid as a complexing agent and aminoethanethiol as a reducing agent was investigated on different underlayer electroless Ni-P plating layers. As a result, it was confirmed that the deposition behavior and film properties of electroless Au plating are affected by grain size and impurity of the electroless Ni-P film, which is used as the plating underlayer. Au plating on the electroless Ni-P plating film with a dense surface structure showed the highest bonding strength. In addition, the electroless Au plating film on the Ni-P plating film has a smaller particle size exhibited higher bonding strength than that on the large particle size.

무전해 Ni(P)과 무연솔더와의 반응 중 금속간화합물의 spalling 현상에 관한 연구 (Spalling of Intermetallic Compound during the Reaction between Electroless Ni(P) and Lead-free Solders)

  • 손윤철;유진한;강성권;;이택영
    • 마이크로전자및패키징학회지
    • /
    • 제11권3호
    • /
    • pp.37-45
    • /
    • 2004
  • 무전해 Ni(P)는 솔더링 특성과 부식저항성이 우수하고 표면 거칠기가 적으며 원하는 금속 상에 선택적으로 도금이 가능하여 전자패키지에서 반도체칩과 기판의 표면 금속층으로 촉 넓게 사용되고 있다. 그러나 솔더와의 반응 중 금속간 화합물의 spalling과 솔더 조인트에서의 취성파괴 문제가 성공적인 적용의 걸림돌이 되어 왔다. 본 연구에서는 각각 조성이 다른 세가지 Ni(P)막 (4.6,9, and $13 wt.\%$ P)을 사용하곡 솔더와의 반응시 무전해 Ni(P)막의 미세구조 및 상 변화와 금속간화합물의 spatting 거동을 면밀히 조사하였다. $Ni_3Sn_4$ 화합물 아래로 침투한 Sn과 P-rich layer ($Ni_3P$)와의 반응에 의해 $Ni_3SnP$ 층이 형성되며 $Ni_3SnP$ 층이 성장함에 따라 $Ni_3Sn_4$가 spalling됨이 관찰되었다. Spalling 후에는 Ni(P)막이 용융된 솔더와 직접 접촉하게 되어 Ni(P)막의 결정화가 가속화되고 $Ni_3P$상이 $Ni_2P$상으로 변태되었다. 또한 이러한 결정화 과정 중 Ni(P)막의 부피가 감소됨에 따라서 인장응력이 발생하여 막 내부에 크랙이 발생하였다.

  • PDF

Sulfamate-Chloride Bath에서 Co 농도의 변화에 따른 Ni-Co 필름의 특성 변화 (Property Changes of Ni-Co Film with the Change of Co Concentration in Sulfamate-chloride Bath)

  • 윤필근;박덕용
    • 한국표면공학회지
    • /
    • 제53권1호
    • /
    • pp.1-8
    • /
    • 2020
  • Sulfamate-chloride baths were fabricated to study the properties of the electrodeposited Ni and NiCo thin films. The dependences of current efficiency, deposit composition of Ni and Co, residual stress, surface morphology and microstructure of electrodeposited Ni and NiCo thin films on CoCl2 concentration in sulfamate-chloride baths were investigated. The current efficiency was measured to be more than about 90%, independent of the changes of CoCl2 concentration in the baths. Residual stress of Ni and NiCo thin films was increased from about 45 to about 250 MPa with varying CoCl2 concentration from 0 to 0.210 M CoCl2 in the baths and then reached to a plateau, about 250 MPa above 0.420 M CoCl2 concentration. Nodular surface morphologies were observed at most CoCl2 concentrations in the baths except 0.210 M. NiCo thin film electrodeposited from the bath with 0.210 M CoCl2 concentration showed an acicular surface morphology. Pure Ni thin film consists of FCC(111), FCC(200), FCC(220), and FCC(311) peaks without any preferred orientation. On the other hand NiCo thin films make up of HCP(100), FCC(111), HCP(101), FCC(200), FCC(220) or HCP(110), FCC(311) or HCP(112) and FCC(222) peaks. It was revealed from the analysis of XRD result that FCC(111) peak at the NiCo thin film electrodeposited from the bath with 0.084 M CoCl2 concentration can be regarded as the preferred orientation. However the peak of the preferred orientation was changed to FCC(220) or HCP(110) above 0.084 M CoCl2 concentration in the baths. Then the intensity of FCC(220) or HCP(110) peak was gradually decreased with increasing CoCl2 concentration further. The crystalline size of pure Ni thin film was observed to be about 53 ㎛ and those of NiCo thin films were in the range of 35~45 ㎛.

PET 필름상 형성한 전자파차폐용 박막과 그 특성 (Formation of Electromagnetic Wave Shielding Thin Film on PET Film Substrate and Their Properties)

  • 임경민;이훈성;배일용;문경만;최철수;이명훈
    • 한국표면공학회:학술대회논문집
    • /
    • 한국표면공학회 2011년도 춘계학술대회 및 Fine pattern PCB 표면 처리 기술 워크샵
    • /
    • pp.205-206
    • /
    • 2011
  • Cu thin films for electromagnetic wave shielding were prepared on PET film and Ni-coated PET film by using Dry and Wet coating method, such as evaporation method, DC sputtering method and copper sulfate($CuSO_4$). After that, Zn thin film and Ni thin film were prepared onto the Cu thin films by using evaporation dry process and Ni electro plating wet process as a finishing treatment, respectively. The result of conductivity test and corrosion resistance test revealed Cu thin films which were formed with bigger grain size and high Cu composition rate have superior properties. Zn thin film by dry evaporation process and Ni thin film by wet electro plating process on Cu thin films were largely contributed to corrosion resistance. However, Ni thin film by wet process made conductivity of all specimen worse, the other hand, Zn thin film by dry process made it better to improve condictivity of specimens just prepared by dry process.

  • PDF

자기장 내 열처리에 의한 퍼멀로이 박막의 일축 이방성 자기장의 회전에 관한 연구 (A Study on the Rotation of Uniaxial Anisotropy Field of NiFe Thin Film by Magnetic Annealing)

  • 송용진;김기출;이충선
    • 한국자기학회지
    • /
    • 제11권4호
    • /
    • pp.163-167
    • /
    • 2001
  • DC 마그네트론 스퍼터링법으로 증착된 700 $\AA$의 NiFe 박막을 박막 증착시 형성시킨 자화용이축에 수직한 자기장을 인가하여 열처리한 후 일축 이방성 자기장의 회전을 조사하였다. NiFe 박막은 열처리온도 160 $^{\circ}C$에서 자화용이축과 자화곤란축을 구분할 수 없는 등방적인 상태가 되었고, 열처리온도가 증가함에 따라 다시 일축 이방성을 갖는 상태가 되었다. 열처리 온도가 400 $^{\circ}C$ 이상인 경우에 급격한 보자력의 증가를 보였다. 열처리 온도가 400 $^{\circ}C$인 경우에 XRD 분석과 AES depth profile은 NiFe 박막 내에서 (111) 방향으로 결정성장이 활발히 일어나며 인접한 전극 Au와 상호화산 현상도 광범위하게 일어남을 보여주었다.

  • PDF