• Proceedings of the KWS Conference
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• 2002.10a
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• pp.456-462
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• 2002

In the present work, a low cost and fine pitch bumping process by electroless Ni/immersion Au UBM (under bump metallurgy) and stencil printing for the solder bump on the Al pad is discussed. The Chip used this experimental had an array of pad 14x14 and zincate catalyst treatment is applied as the pretreatment of Al bond pad, it was shown that the second zincating process produced a dense continuous zincating layer compared to first zincating. Ni UBM was analyzed using Scanning electron microscopy, Energy dispersive x-ray, Atomic force microscopy, and X-ray diffractometer. The electroless Ni-P had amorphous structures in as-plated condition. and crystallized at 321 C to Ni and Ni$_3$P. Solder bumps are formed on without bridge or missing bump by stencil print solder bump process.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.128-132
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• 2003

무전해 Ni-P UBM과 3가지 경우의 무연 솔더간의 계면연구를 통해 Bi가 솔더의 합금원소로 들어감에 따라 계면반응에 어떠한 영향을 줄 수 있는 가를 연구했다. 3가지 다른 무연 솔더는 Bi가 각각 $0wt\%,\;4.8wt\%,\;58wt\%$들어간 Sn3.5Ag, Sn3.5Ag4.8Bi, Sn58Bi 이다. reflow를 수행한 후에 세 가지 솔더에서 나타나는 계면에서의 IMC는 $Ni_3Sn_4$로서 어떤 다른 솔더도 Bi를 함유한 IMC가 계면에선 관찰되지 않았다. 다만 SnAgBi 솔더의 경우 특이하게 솔더내에서 침상의 $Ni_3Sn_4$가 reflow후에 관찰되었다. 또한 반응속도의 척도가 되는 Ni-P UBM소모속도를 비교해 보면 reflow후의 SnAg와 SnAgBi의 경우에는 비슷하나 SnBi의 경우에는 알서 두 솔더에 비해 눈에 띠게 느림을 관찰하였다. 이러한 Ni-P UBM의 소모경향을 Bi의 함량, 그에 따른 Sn의 상대적인 함량의 관점에서 고찰하고자 한다.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.09a
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• pp.193-215
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• 2003

Fracture Mechanism of Flip Chip Electromigration Failure - Mostly caused by Cathode Depletion at the UBM/Solder Interface Guideline to Increase Electromigration Resistance Material Selection: Sn/Ag(/Cu) > Pb/63Sn Cu UBM > Ni UBM (but, Solder Material combination) UBM Design: thick UBM is preferable (but, Stress Issue) Pad open/UBM size: as large as possible (but, pad size & pitch limit)

• Journal of the Microelectronics and Packaging Society
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• v.8 no.1
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• pp.45-51
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• 2001

The effects of wettability and surface oxidation on the low temperature and ultra-fine solder bump formation have been studied. Difference sequences of near eutectic In-Ag and eutectic Bi-Sn solders were evaporated on Au/Cu/Cr or Au/Ni/Ti Under Bump Metallurgy (UBM) pads. Solder bumps were formed using lift-off method and were reflowed in Rapid Thermal Annealing (RTA) system. The solder bumps in which In was in contact with UBM in In-Ag solder and the solder bumps in which Sn was in contact with UBM in Bi-Sn solder showed better bump formability during reflow than other solder bumps. The ability to form spherical solder bumps was affected mainly by the wettability of solders to UBM pads.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.3
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• pp.65-69
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• 2010

In this study, we investigated the effects of UBM(Under Bump Metallization) and solder composition on the drop impact reliability of wafer level packaging. Fan-in type WLP chips were prepared with different solder ball composition (Sn3.0Ag0.5Cu, and Sn1.0Ag0.5Cu) and UBM (Cu 10 ${\mu}m$, Cu 5 ${\mu}m$\Ni 3 ${\mu}m$). Drop test was performed up to 200 cycles with 1500G acceleration according to JESD22-B111. Cu\Ni UBM showed better drop performance than Cu UBM, which could be attributed to suppression of IMC formation by Ni diffusion barrier. SAC105 was slightly better than SAC305 in terms of MTTF. Drop failure occurred at board side for Cu UBM and chip side for Cu\Ni UBM, independent of solder composition. Corner and center chip position on the board were found to have the shortest drop lifetime due to stress waves generated from impact.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.68-71
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• 2003

The reaction of ultra-small eutectic 58Bl-42Sn solder bump with Au/Ni/Ti and Au/Cu/Ti UBMs during reflow was studied. The eutectic Bi-Sn solder bumps of $46{\mu}m$ diameter were fabricated by using the evaporation method and were reflowed using the rapid thermal annealing system. The intermetallic compound was characterized using a SEM, an EDS, and an XRD. The $(Cu_xAu_{1-x})_6Sn_5$ compounds formed at the interface between Bi-Sn solder and Au/Cu/Ti UBM. On the other hand, in the Bi-Sn solder bump on Au/Ni/Ti UBM, the faceted and rectangular intermetallic compounds were observed on the solder bump surface and inside the solder bump as well as at the UBM interface. These intermetallic compounds were Identified as $(Au_{l-x-y}Bi_xNi_y)Sn_2$ phase.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.2
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• pp.55-62
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• 2000

The wetting balance test was performed in an attempt to estimate the wetting properties of the UBM-coated Si-wafer on one side to the Sn-Pb solder. The wetting curves of the one and both side-coated UBM layers had the similar shape and the parameters characterizing the curve shape showed the similar transition tendency to the temperature. The wetting property estimation was possible with the new wettability indices from the wetting curves of one side-coated specimen; $F_{min}$, $F_{s}t_{s}$ and $t_s$. For UBM of Si-chip, Au/Cu/Cr UBM was better than Au/Ni/Ti in the point of wetting time. The contact angle of the one side coated Si-plate to the Sn-Pb solder could be calculated from the force balance equation by measuring the static state force and the tilt angle.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.20 no.2
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• pp.187-192
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• 2011

UBM(Under Bump Metallurgy) is very important for successful realization of Flip-Chip technology. In this study, it is investigated the interfacial reactions between various Sn-Ag solder alloys and Ni-P/Au UBM and Cu plate finish. It is also evaluated the shear strength by using the micro shear-punch test method for Sn-37Pb alloy, binary and ternary alloys of environment-friendly Pb-free solder alloys which are applied in the electronic packages. In terms of interfacial microstructure, the Pb-free solder joints have thicker IMCs than the Sn-Pb solder joints. The thickness of IMC is related to Reflow time. The IMC has been observed to grow with the increase in Reflow time. As a result of the shear test, in case of Max. shear strength, Pb-free solder showed the highest strength value and Sn-37Pb showed the lowest strength value 10 be generally condition of Reflow time.

• Proceedings of the KWS Conference
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• 2003.05a
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• pp.199-200
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• 2003

• Korean Journal of Materials Research
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• v.9 no.3
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• pp.288-294
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• 1999

In the flip chip interconnection using solder bump, the Under Bump Metallurgy (UBM) is required to perform multiple functions in its conversion of an aluminum bond pad to a solderable surface. In this study, various UBM systems such as $Al 1\mu\textrm{m} / Ti 0.2\mu\textrm{m} / Cu 5\mu\textrm{m}, Al 1\mu\textrm{m} / Ti 0.2\mu\textrm{m} / Cu 1\mu\textrm{m}, al 1\mu\textrm{m}/Ni 0.2\mu\textrm{m} / Cu 1\mu\textrm{m} and Al 1\mu\textrm{m}/Pd 0.2\mu\textrm{m} / Cu 1\mu\textrm{m}$ for flip chip interconnection using the low melting point eutectic 63Sn-37Pb solder were investigated and compared to their metallurgical properties. $100\mu\textrm{m}$ size bumps were prepared for using an electroplating process. The effects of the number of reflows and aging time on the growth of intermetallic compounds(IMC) were investigated. $Cu_6Sn_5$ and $Cu_3Sn$ IMC were abserved after aging treatment in the UBM system with thick coper $(Al 1\mu\textrm{m}/Ti 0.2\mu\textrm{m}/Cu 5\mu\textrm{m})$. However only the $Cu_6Sn_5$ was detected in the UBM system with $1\mu\textrm{m}$ thick copper even after 2 reflow and 7 day aging at $150^{\circ}C$. Complete Cu consumption by Cu-Sn IMC growth gives rise to a direct contact between solder inner layer such as Ti, Ni and Pd, and hence to possibly cause reactions between two of them. In this study, however, only for the Pd case, IMC of PdSn. was observed by Cu consumption. UBM interfacial reactions with s이der affected the adhesion strength ot s이der balls after s이der reflow and annealing treatment.