• Journal of the Korean Magnetics Society
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• v.9 no.4
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• pp.217-222
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• 1999

The pick up impurity was studied for preparing the NiCuZn ferrite powder by a ball milling method that usually uses in the industrial ceramic process. The raw materials of NiO, CuO, ZnO, and $Fe_2O_3$ powder were weighted according to various spinel composition and mixed for 18 hrs by a wet ball milling method after that the slurry was followed by spray dried and calcined at $700^{\circ}C$ 3 hrs. The calcined NCZF powder was finally ball milled during 65 hrs as same method. The stainless steel ball and jar are used as mixing and milling equipment and the solid concentration of the slurry was 25 vol%. The impurities, stainless steel pickup, were effected by the composition of raw materials especially iron oxide, nickel oxide in the mixing process and by the rate of calcine of NiCuZn ferrite in final milling process. The empirical equation of stainless steel pickup was driven in the wet ball milling system. Finally, the composition of NiCuZn ferrite could be controlled by the empirical equation.

• Applied Chemistry for Engineering
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• v.20 no.5
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• pp.500-504
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• 2009

NiCuZn Ferrites, known as preventing EMI/EMC, were prepared and their properties were investigated based on the chemical composition ratio, sintering temperature, and mean particle size. The NiCuZn ferrite made of $Fe_2O_3$ 49.0 mol%, NiO 9.0 mol%, CuO 8.0 mol%, ZnO 34.0 mol% could be applied at the largest range of electromagnetic wave. The optimal calcination and sintering temperature were $900^{\circ}C$ and $1080^{\circ}C$, respectively. The electromagnetic wave loss capacity of its mean particle size $1.12{\mu}m$ was superior to others examined.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.144-148
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• 1993

This paper is a study on electromagnetic wave absorption properties for the composition ratio of Ni-Zn-Fe$_2$O$_4$. Li-Zn-Fe$_2$O$_4$was composed of Fe$_2$O$_3$ 48∼51mo1%, LiO 18 ∼22mo1%, ZnO 34∼27mo1%. and sintering was carried out at 1200$^{\circ}C$. Through the experiments, the resonance phenomenon occured at low frequence range for high permeability, and vice versa. Specialy, In the case of Fe$_2$O$_3$49mol%, NiO 20mo1%, ZnO 3lmol% ,and the matching thickness was 10mm , the absorbing bandwith was 0.35 ∼0.95GHz. Also, In the case of Fe$_2$O$_3$51mo1%. NiO 22mo1%, ZnO 27mol%, we could get the absorbing bandwith of 0.45∼1.2GHz when the matching thickness was 6mm. Therefore. it is proved that electromagnetic wave absorbers with the above bandwidth range can be fabricated successful1y.

• Journal of the Korean Ceramic Society
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• v.40 no.6
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• pp.560-565
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• 2003

M-doped (M=Al, Ni) ZnO thermoelectric materials were fully densified at low temperatures of 800∼1,000$^{\circ}C$ and their sintering characteristics and microstructural features were investigated. Electron microscopic analysis showed that the addition of NiO promoted tile formation of solid solution and caused actively grain growth. The addition of A1$_2$O$_3$ prevented the evaporation of pure ZnO at grain boundaries and suppressed the grain growth by the formation of secondary phase. In case of the addition of A1$_2$O$_3$ together with NiO, the specimen showed an excellent microstructure and also the SEM-EBSP (Electron Back-scattered Diffraction Pattern) analysis confirmed that it shows a superior grain boundary distribution to the others specimens. These microstructural characteristics induced by the addition of A1$_2$O$_3$ together with NiO may increase the electrical conductivity by the increase in carrier concentration and decrease the thermal conductivity by the phonon scattering effect and, consequently, improve the thermoelectric property.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.243.2-243.2
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• 2015

We report a high-performing nanoscale NiO thin film grown by thermal oxidation of sputtered Ni film. The structural, physical, optical and electrical properties of nanoscale NiO were comprehensively investigated. A quality transparent heterojunction (NiO/ZnO) was formed by large-area applicable sputtering deposition method that has an extremely low saturation current of 0.1 nA. Considerable large rectification ratio of more than 1000 was obtained for transparent heterojunction device. Mott-Schottky analyses were applied to develop the interface of NiO and ZnO by establishing energy diagrams. Nanoscale NiO has the accepter carrier concentration of the order of 1018 cm-3. Nanoscale NiO Schottky junction device properties were comprehensively studied using room temperature impedance spectroscopy.

• Korean Journal of Materials Research
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• v.22 no.12
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• pp.689-695
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• 2012

We have examined the co-doping effects of 1/2 mol% NiO and 1/4 mol% $Cr_2O_3$ (Ni:Cr = 1:1) on the reaction, microstructure, and electrical properties, such as the bulk defects and the grain boundary properties, of ZnO-$Bi_2O_3-Sb_2O_3$ (ZBS; Sb/Bi = 0.5, 1.0, and 2.0) varistors. The sintering and electrical properties of Ni,Cr-doped ZBS, ZBS(NiCr) varistors were controlled using the Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$), ${\alpha}$-spinel ($Zn_7Sb_2O_{12}$), and ${\delta}-Bi_2O_3$ were detected for all of compositions. For the sample with Sb/Bi = 1.0, the Pyrochlore was decomposed and promoted densification at lower temperature by Ni rather than by Cr. A homogeneous microstructure was obtained for all of the samples affected by ${\alpha}$-spinel. The varistor characteristics were not dramatically improved (non-linear coefficient, ${\alpha}$ = 5~24), and seemed to form ${Zn_i}^{{\cdot}{\cdot}}$(0.17 eV) and ${V_o}^{\cdot}$(0.33 eV) as dominant defects. From impedance and modulus spectroscopy, the grain boundaries were found to have been divided into two types, i.e., one is tentatively assigned to ZnO/$Bi_2O_3$ (Ni,Cr)/ZnO (0.98 eV) and the other is assigned to a ZnO/ZnO (~1.5 eV) homojunction.

• Journal of the Korean Ceramic Society
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• v.30 no.8
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• pp.609-614
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• 1993

Semiconducting Zn-Ti-Ni-O and Zn-Ti-O system were investigated. The specimens sintered at the temperature between 125$0^{\circ}C$ and 145$0^{\circ}C$ exhibited PTCR effect between -5$0^{\circ}C$ and 35$0^{\circ}C$ with resistivity ration exceeding three decades. Semiconducting Zn-Ti-Ni-O is consisted of two phases, one is n-type ZnO and the other is p-type spinel structure. The mechanism of PTCR effect was explained in relation to the piezoelectric property of ZnO and the residual stress caused by thermal expansion difference between two phases during cooling process.

• Journal of the Korean Ceramic Society
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• v.38 no.6
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• pp.506-508
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• 2001

The ferrite plating with applying power ultrasound waves of 19.5 kHz and 600W enabled us to encapsulate entirely MnZn ferrite cores for transformers with Ni$\sub$x/Zn$\sub$y/Fe$\sub$3-x-y/O$_4$coating. Supplying a NH$_4$OH solution during the plating broke the limit of the solubility of Ni ions to ferrite-plated films. The electrical resistivity of the NiZn ferrite coating increased with increasing the Ni and Zn content, reaching 2.3${\times}$10$\^$5/Ωcm at the composition of Ni$\sub$0.24/Zn$\sub$0.30/Fe$\sub$2.46/O$_4$. The saturation magnetization was 540 emu/㎤. As a result, the MnZn ferrite cores were successfully encapsulated with the NiZn ferrite coatings for an insulation layer.

• Journal of the Korean Chemical Society
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• v.18 no.3
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• pp.189-193
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• 1974

The tridentate schiff base, salicylidene imino-o-thiolbenzene, has been synthetized from salicylaldehyde and o-amino thiolbenzene by Duff reaction. The schiff base has been reacted with Cu(II), Ni(II), and Zn(II), to form new complexes; Cu(II)$[C_{13}H_9ONS]{\cdot}3H_2O$, Ni(II)$[C_{13}H_9ONS]{\cdot}3H_2O,\;Zn(II)[C_{13}H_9ONS]{\cdot}3H_2O$ It appears that the Cu(II)-complex has tetra-coordinated configuration with the schiff base and one molecule of water, while the Ni(II) and Zn(II)-complexes have hexacoordinated configuration with the schiff base and three molecules of water. The mole ratio of tridentate schiff base ligand to metals was 1:1. These complexes have been identified by infrared spectra, visible spectra, TGA, DTA and elemental analysis.

• Journal of the Korean Institute of Navigation
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• v.22 no.4
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• pp.69-75
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• 1998

The super wideband electromagnetic wave absorber in RF-A-PF type has been proposed, which can be used for an anechoic chamber, wall material to prevent TV ghost, etc, In this paper, $Ni_x-Mg_{0.1}-Zn_(1-x-0.1){\cdot}Fe_2O_4$ Ferrite Powder has been fabricated. Using this, then, [$Ni_x-Mg_{0.1}-Zn_(1-x-0.1){\cdot}Fe_2O_4$-Rubber composite for RF-layer in the RF-A-PF type absorber has been fabricated and its characteristics has been analyzed. As a result, it has been shown that the $Ni_x-Mg_{0.1}-Zn_(1-x-0.1){\cdot}Fe_2O_4$-Rubber composit with the quantity $_x$ of $Ni_x$ between 0.5 and 0.6 is suitable for the RF-layer in the case of which the grain size is sub-micrometer order.