• 마이크로전자및패키징학회지
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• 제11권3호
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• pp.1-7
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• 2004

주석 도금은 특정 환경하에서 위스커를 발생시키며, 이는 전자부품의 불량을 초래한다. 최근 세계곳곳에서는 환경보호를 위해 "무연"의 사용을 권고하고 있다. 본 논문에서는 두 종류 무연 도금 재료에서 도금 온도와 신뢰성시험 하에서 성장하는 위스커를 평가하였다. 도금 온도가 높아질수록 표면에 형성되는 도금 입자의 크기는 커지고, 위스커의 성장은 작아진다. 또한 온도 순환시험에서 성장한 위스커는 무광택 Sn 도금은 굽은 모양을, 무광택 Sn-Bi에서는 줄무의 모양이 관찰되었고, Sn 도금에 비해 Sn-Bi에서 위스커가 작게 성장하였다. 무광택 Sn 도금된 FeNi42 리드프레임은 TC 300 사이클에서 직경이 $7.0{\~}10.0{\mu}m$이고, 길이가 $25.0{\~}45.0{\mu}m$인 위스커가 성장하였다. 또한 Cu는 300 사이클에서는 표면에 노듈(핵 상태)만이 관찰되었고, 600 사이클에서 길이가 $3.0{\~}4.0{\mu}m$의 위스커로 성장하였다. TC 600 사이클 후 FeNi42는 계면에서 ${\~}0.34{\mu}m$의 얇은 $Ni_3Sn_4$가, Cu에서는 두께가 $0.76{\~}l.14{\mu}m$인 $Cu_6Sn_5$와 ${\~}0.27{\mu}m$의 $Cu_3Sn$ 화합물들이 두껍게 성장하였다. 따라서 FeNi42 리드프레임은 열팽창계수의 차이, Cu에서는 금속간 화합물의 형성이 위스커의 성장에 영향을 미치는 주요 인자이다.

• 한국재료학회지
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• 제13권2호
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• pp.101-105
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• 2003

In this study, we have investigated the availability of the electroless Ni-B plating for a diffusion barrier of the bus electrode. The Ni-B layer of 1$\beta$: thick was electroless deposited on the electroplated Cu bus electrode for AC plasma display. The layer was to encapsulate Cu bus electrode to prevent from its oxidation and to serve as a diffusion barrier against Cu contamination of the transparent dielectric layer in AC plasma display. The microstructure of the as-plated barrier layer was made of an amorphous phase and the structure was converted to crystalline at about 30$0^{\circ}C$. The concentration of boron was about 5∼6 wt.% in the electroless Ni-B deposit regardless of DMAB concentration. The electroless Ni-B deposit was coated on the surface of the electroplated Cu bus electrode uniformly. And the electroless Ni-B plating was found to be an appropriate process to form the diffusion barrier.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.444-445
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• 2009

The metallic contact system of silicon solar cell must have several properties, such as low contact resistance, easy application and good adhesion. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. Nickel monosilicide(NiSi) has been suggested as a suitable silicide due to its lower resistivity, lower sintering temperature and lower layer stress than $TiSi_2$. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposit the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 16.446 % on $0.2\sim0.6\;{\Omega}{\cdot}cm$, $20\;\times\;20\;mm^2$, CZ(Czochralski) wafer.

• 융복합기술연구소 논문집
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• 제8권1호
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• pp.33-39
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• 2018

The screen printing method for forming the electrode by applying the existing pressure is difficult to apply to thin wafers, and since expensive Ag paste is used, it is difficult to solve the problem of cost reduction. This can solve both of the problems by forming the front electrode using a plating method applicable to a thin wafer. In this paper, the process conditions of electrode formation are optimized by using LIEP (Light-Induced Electrode Plating). Experiments were conducted by varying the Ni plating bath temperature $40{\sim}70^{\circ}C$, the applied current 5 ~ 15 mA, and the plating process time 5 ~ 20 min. As a result of the experiment, it was confirmed that the optimal condition of the structural characteristics was obtained at the plating bath temperature of $60^{\circ}C$, 15 mA, and the process time of 20 min. The Cu LIEP process conditions, experiments were conducted with Cu plating bath temperature $40{\sim}70^{\circ}C$, applied voltage 5 ~ 15 V, plating process time 2 ~ 15 min. As a result of the experiment, it was confirmed that the optimum conditions were obtained as a result of electrical and structural characteristics at the plating bath temperature of $60^{\circ}C$ and applied current of 15 V and process time of 15 min. In order to form Ni silicide, the firing process time was fixed to 2 min and the temperature was changed to $310^{\circ}C$, $330^{\circ}C$, $350^{\circ}C$, and post contact annealing was performed. As a result, the lowest contact resistance value of $2.76{\Omega}$ was obtained at the firing temperature of $310^{\circ}C$. The contact resistivity of $1.07m{\Omega}cm^2$ can be calculated from the conditionally optimized sample. With the plating method using Ni / Cu, the efficiency of the solar cell can be expected to increase due to the increase of the electric conductivity and the decrease of the resistance component in the production of the solar cell, and the application to the thin wafer can be expected.

• 한국세라믹학회지
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• 제45권12호
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• pp.807-814
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• 2008

The Cu-Ni-YSZ cermet anodes for direct use of methane in solid oxide fuel cells have been fabricated by electroplating Cu into the porous Ni-YSZ cermet anode. The uniform distribution of Cu in the Ni-YSZ anode could be obtained via pulse electroplating in the aqueous solution mixture of $CuSO_4{\cdot}5H_{2}O$ and ${H_2}{SO_4}$ for 30 min with 0.05 A of average applied current. The power density ($0.17\;Wcm^{-2}$) of a single cell with a Cu-Ni-YSZ anode was shown to be slightly lower in methane at $700^{\circ}C$, compared with the power density ($0.28\;Wcm^{-2}$) of a single cell with a Ni-YSZ anode. However, the performance of the Ni-YSZ anode-supported single cell was abruptly degraded over 21 h because of carbon deposition, whereas the Cu-Ni-YSZ anode-supported single cell showed the enhanced durability upto 52 h.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.91.2-91.2
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• 2010

The use of plated front contact for metallization of silicon solar cell may alternative technologies as a screen printed and silver paste contact. This technologies should allow the formation of contact with low contact resistivity a high line conductivity and also reduction of shading losses. The better performance of Ni/Cu contacts is attributed to the reduced series resistance due to better contact conductivity of Ni with Si and subsequent electroplating of Cu on Ni. The ability to pattern narrower grid lines for reduced light shading combined with the lower resistance of a metal silicide contact and improved conductivity of plated deposit. This improves the FF as the series resistance is deduced. This is very much required in the case of low concentrator solar cells in which the series resistance is one of the important and dominant parameter that affect the cell performance. A selective emitter structure with highly dopes regions underneath the metal contacts, is widely known to be one of the most promising high-efficiency solution in solar cell processing. This paper using selective emitter structure technique, fabricated Ni/Cu plating metallization cell with a cell efficiency of 17.19%.

• 한국재료학회지
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• 제27권8호
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• pp.409-415
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• 2017

For enhanced cavitation erosion resistance of vessel propellers, an electroless Ni-P plating method was introduced to form a coating layer with high hardness on the surface of Cu alloy (CAC703C) used as vessel propeller material. An electroless Ni-P plating reaction generated by Fe atoms in the Cu alloy occurred, forming a uniform amorphous layer with P content of ~10 wt%. The amorphous layer transformed to (Ni3P+Ni) two phase structure after heat treatment. Cavitation erosion tests following the ASTM G-32 standard were carried out to relate the microstructural changes by heat treatment and the cavitation erosion resistance in distilled water and 3.5 wt% NaCl solutions. It was possible to obtain excellent cavitation erosion resistance through careful microstructural control of the coating layer, demonstrating that this electroless Ni-P plating process is a viable coating process for the enhancement of the cavitation erosion resistance of vessel propellers.

• 한국전기전자재료학회논문지
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• 제29권6호
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• pp.370-375
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• 2016

In this paper, we investigated the electrical properties of crystalline silicon solar cell fabricated with Ni/Cu/Ag plating. The laser process was used to ablate silicon nitride layer as well as to form the selective emitter. Phosphoric acid layer was spin-coated to prevent damage caused by laser and formed selective emitter during laser process. As a result, the contact resistance was decreased by lower sheet resistance in electrode region. Low sheet resistance was obtained by increasing laser current, but efficiency and open circuit voltage were decreased by damage on the wafer surface. KOH treatment was used to remove the laser damage on the silicon surface prior to metalization of the front electrode by Ni/Cu/Ag plating. Ni and Cu were plated for each 4 minutes and 16 minutes and very thin layer of Ag with $1{\mu}m$ thickness was plated onto Ni/Cu electrode for 30 seconds to prevent oxidation of the electrode. The silicon solar cells with KOH treatment showed the 0.2% improved efficiency compared to those without treatment.

• 한국분말재료학회지
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• 제22권2호
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• pp.134-137
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• 2015

The monolayer engineering diamond particles are aligned on the oxygen free Cu plates with electroless Ni plating layer. The mean diamond particle sizes of 15, 23 and $50{\mu}m$ are used as thermal conductivity pathway for fabricating metal/carbon multi-layer composite material systems. Interconnected void structure of irregular shaped diamond particles allow dense electroless Ni plating layer on Cu plate and fixing them with 37-43% Ni thickness of their mean diameter. The thermal conductivity decrease with increasing measurement temperature up to $150^{\circ}C$ in all diamond size conditions. When the diamond particle size is increased from $15{\mu}m$ to $50{\mu}m$ (Max. 304 W/mK at room temperature) tended to increase thermal conductivity, because the volume fraction of diamond is increased inside plating layer.

• 한국전기전자재료학회논문지
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• 제24권12호
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• pp.1010-1017
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• 2011

The use of plated front contact for metallization of silicon solar cell may alternative technologies as a screen printed and silver paste contact. This technologies should allow the formation of contact with low contact resistivity a high line conductivity and also reduction of shading losses. A selective emitter structure with highly dopes regions underneath the metal contacts, is widely known to be one of the most promising high-efficiency solution in solar cell processing. When fabricated Ni/Cu plating metallization cell with a selective emitter structure, it has been shown that efficiencies of up to 18% have been achieved using this technology.