• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.11
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• pp.968-972
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• 2008

Ni/Ti/Al multilayer system ('/'denotes the deposition sequence) was tested for low-resistance ohmic contact formation to Al-implanted p-type 4H-SiC. Ni 30 nm / Ti 50 nm / Al 300 nm layers were sequentially deposited by e-beam evaporation on the 4H-SiC samples which were implanted with Al (norminal doping concentration = $4\times10^{19}cm^{-3}$) and then annealed at $1700^{\circ}C$ for dopant activation. Rapid thermal anneal (RTA) temperature for ohmic contact formation was varied in the range of $840\sim930^{\circ}C$. Specific contact resistances were extracted from the measured current vs. voltage (I-V) data of linear- and circular transfer length method (TLM) patterns. In constrast to Ni contact, Ni/Ti/Al contact shows perfectly linear I-V characteristics, and possesses much lower contact resistance of about $2\sim3\times10^{-4}\Omega{\cdot}cm^2$ even after low-temperature RTA at $840^{\circ}C$, which is about 2 orders of magnitude smaller than that of Ni contact. Therefore, it was shown that RTA temperature for ohmic contact formation can be lowered to at least $840^{\circ}C$ without significant compromise of contact resistance. X-ray diffraction (XRD) analysis indicated the existence of intermetallic compounds of Ni and Al as well as $NiSi_{1-x}$, but characteristic peaks of $Ti_{3}SiC_2$, a probable narrow-gap interfacial alloy responsible for low-resistance Ti/Al ohmic contact formation, were not detected. Therefore, Al in-diffusion into SiC surface region is considered to be the dominant mechanism of improvement in conduction behavior of Ni/Ti/Al contact.

• Resources Recycling
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• v.24 no.1
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• pp.35-42
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• 2015

To obtain the fundamental information on the dissolution of nickel into the slag in the pyrometallurgical processes for treatment of wasted PCB, the distribution ratios of nickel between CaO-$SiO_2-Al_2O_3$-MgO slag and copper-5 wt%Ni alloy were measured at 1623 K to 1823 K under a controlled $CO_2$-CO atmosphere. The distribution ratio of Ni increased linearly with increasing oxygen partial pressure. Therefore, the dissolution reaction of nickel into the slags could be described by the following equation; $$Ni(l)_{metal}+\frac{1}{2}O_2(g)NiO(l)_{slag}$$ The distribution ratio of Ni increased linearly with increasing content of basic oxides(CaO and MgO) in slag. However, the distribution ratio of Ni decreased linearly with increasing temperature. From these results, the empirical equation of distribution ratio of Ni was obtained by the following equation from the analysis of experimental conditions by multiple regression. $${\log}L_{Ni}=0.4000{\log}P_{O2}-5.1{\times}10^{-4}T+0.3375\(\frac{X_{CaO}+X_{MgO}}{X_{SiO2}}\)$$

• Clean Technology
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• v.5 no.2
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• pp.63-68
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• 1999

The activities of Ni(20wt%)/$La_2O_3$, Ni(20wt%)/${\gamma}-Al_2O_3$, and Ni(20wt%)/$SiO_2$ catalyst for $CO_2$ reforming of $CH_4$ were investigated in a fixed bed flow reactor under atmospheric condition. Catalyst characterization using XRD, TEM, SEM, BET analysis were also conducted. The catalytic activity of Ni(20wt%)/$La_2O_3$ catalyst has relatively superior to that of Ni(20wt%)/${\gamma}-Al_2O_3$ and Ni(20wt%)/$SiO_2$ catalyst. The good activity of Ni(20wt%)/$La_2O_3$ catalyst seems to depend on reduced $Ni^{\circ}$ phases of NiO($\rightarrow$ Ni + O), $LaNiO_3$($\rightarrow$ $Ni+La_2O_3$), Ni crystalline phases, and decoration of Ni phases by lanthanum species is also an important factor. Ni(20wt%)/${\gamma}-Al_2O_3$ and Ni(20wt%)/$SiO_2$ catalyst due to surface acidity resulted in the deposition of wisker type and encapsulate carbon on the surface of catalyst, but Ni(20wt%)/$La_2O_3$ catalyst did not show carbon on the surface of catalyst up to 8.5hr reaction.

• Korean Journal of Materials Research
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• v.19 no.10
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• pp.522-526
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• 2009

Graphene has been effectively synthesized on Ni/SiO$_2$/Si substrates with CH$_4$ (1 SCCM) diluted in Ar/H$_2$(10%) (99 SCCM) by using an inductively-coupled plasma-enhanced chemical vapor deposition. Graphene was formed on the entire surface of the 500 nm thick Ni substrate even at 700 $^{\circ}C$, although CH$_4$ and Ar/H$_2$ gas were supplied under plasma of 600 W for 1 second. The Raman spectrum showed typical graphene features with D, G, and 2D peaks at 1356, 1584, and 2710 cm$^{-1}$, respectively. With increase of growth temperature to 900 $^{\circ}C$, the ratios of the D band intensity to the G band intensity and the 2D band intensity to the G band intensity were increased and decreased, respectively. The results were strongly correlated to a rougher and coarser Ni surface due to the enhanced recrystallization process at higher temperatures. In contrast, highquality graphene was synthesized at 1000 $^{\circ}C$ on smooth and large Ni grains, which were formed by decreasing Ni deposition thickness to 300 nm.

• Applied Chemistry for Engineering
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• v.32 no.4
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• pp.478-482
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• 2021

The catalytic yields of partial oxidation of methane (POM) to hydrogen over Ln(1)-Ni(5)/SBA-15 (Ln = Dy, Eu, Pr, and Tb) were investigated in a fixed bed flow reactor under atmosphere. As 1 wt% of Eu was added to Ni(5)/SBA-15 catalyst, the O1s and Si2p core electron levels of Eu(1)-Ni(5)/SBA-15 showed the chemical shift by XPS. XPS analysis also demonstrated that the atomic ratio of O1s, Ni2p_3/2, and Si2p increased to 1.284, 1.298, and 1.058, respectively, and exhibited O^-, and O^2- oxygen and metal ions such as Eu³⁺, Ni⁰, Ni²⁺, and Si⁴⁺ on the catalyst surface. The yield of hydrogen on the Eu(1)-Ni(5)/SBA-15 was 57.2%, which was better than that of Ln(1)-Ni(5)/SBA-15 (Ln = Dy, Pr, and Tb), the catalytic activity was kept steady even 25 h. As 1 wt% of Eu was added to Ni(5)/SBA-15, the oxygen vacancies caused by strong metal-support interaction (SMSI) effect due to the strong interaction between metals and carrier are made. They are resulted in increasing the dispersion of Ni⁰, and Ni²⁺ nano particles on the surface of catalyst, and are kept catalytic activity.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.1
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• pp.8-11
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• 2002

Ni, Si and $SiO_2$ films were implanted by 350 keV B $i_{+}$ ions at room temperature with fluences of 1$\times$10$^{16}$ and 2$\times$10$^{16}$ ions/c $m^2$ The depth distributions of implanted B $i^{+}$ ions in Ni, Si and $SiO_2$ films were by investigated by Rutherford backscattering. The results show that the depth distributions of implanted B $i^{+}$ ions into Ni, Si and $SiO_2$ films have obeyed nearly Gaussian distributions. The maximum difference between experimental and calculated values is less than 18 % for mean projected range. Experimental range straggling deviated significantly from calculated value. The possible reasons are discussed.sed.d.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.267-274
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• 2001

Removal of Cr, Ni and Cu impurities on Si surfaces using remote plasma-excited hydrogen was investigated. Si surfaces were contaminated intentionally by acetone with low purity. To determine the optimum process condition, remote plasma-excited hydrogen cleaning was conducted for various rf-powers and plasma exposure times. After remote plasma-excited hydrogen cleaning, Si surfaces were analyzed by Total X-ray Reflection Fluorescence(TXRF), Surface Photovoltage(SPV) and Atomic Forece Microscope(AFM). The concentrations of Cr, Ni and Cu impurities were reduced and the minority carrier lifetime increased after remote plasma-excited hydrogen. Also RMS roughness decreased by more than 30% after remote plasma-excited hydrogen cleaning. AFM analysis results also show that remote plasma-excited hydrogen cleaning causes no damage to the Si surface. TXRF analysis results show that remote plasma-excited hydrogen cleaning is effective in eliminating metallic impurities from Si surface only if it is performed under an optimum process conditions. The removal mechanism of the Cr, Ni and Cu impurities using remote plasma-excited hydrogen treatments is proposed to be the lift-off during removal of underlying chemical oxides.

• Journal of the Korean Magnetics Society
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• v.17 no.3
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• pp.120-123
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• 2007

The typical double-barrier magnetic tunnel junction (DMTJ) structure examined in this paper consists of a Ta 45/Ru 9.5/IrMn 10/CoFe7/$AlO_x$/free layer/AlO/CoFe 7/IrMn 10/Ru 60 (nm). The free layer consists of an $Ni_{16}Fe_{62}Si_8B_{14}$ 7 nm, $Co_{90}Fe_{10}$ (fcc) 7 nm, or CoFe $t_1$/NiFeSiB $t_2$/CoFe $t_1$ layer in which the thicknesses $t_1$ and $t_2$ are varied. The DMTJ with an NiFeSiB-free layer had a tunneling magnetoresistance (TMR) of 28%, an area-resistance product (RA) of $86\;k{\Omega}{\mu}m^2$, a coercivity ($H_c$) of 11 Oe, and an interlayer coupling field ($H_i$) of 20 Oe. To improve the TMR ratio and RA, a DMTJ comprising an amorphous NiFeSiB layer that could partially substitute for the CoFe free layer was investigated. This hybrid DMTJ had a TMR of 30%, an RA of $68\;k{\Omega}{\mu}m^2$, and a of 11 Oe, but an increased of 37 Oe. We confirmed by atomic force microscopy and transmission electron microscopy that increased as the thickness of NiFeSiB decreased. When the amorphous NiFeSiB layer was thick, it was effective in retarding the columnar growth which usually induces a wavy interface. However, if the NiFeSiB layer was thin, the roughness was increased and became large because of the magnetostatic $N{\acute{e}}el$ coupling.

• Bulletin of the Korean Chemical Society
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• v.23 no.5
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• pp.669-673
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• 2002

Ni catalyst (Ni: 15 wt%) supported on precalcined SiO2 has been investigated in reforming reactions of methane to synthesis gas. The catalyst exhibited fairly good activity and stability in partial oxidation of methane (POM), whereas it deactivated in steam reforming of methane (SRM). Pulse reaction results of CH4, O2, and CH4/O2 revealed that Ni/SiO2 has high capability to dissociate methane. The results also revealed that both CH4 and O2 are activated on the surface of metallic Ni, and then surface carbon species react with adsorbed oxygen to produce CO and CO2 depending on the bond strength of the oxygen species on the catalyst surface.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.178-179
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• 2014

In this study, $Ni-W-Si_3N_4$ alloy composite coatings were prepared by pulse electrodeposition method using nickel sulfate bath with different contents of tungsten source, $Na_2WO_4.2H_2O$, and dispersed $Si_3N_4$ nano particles. The structure and microstructure ofcoatings was separately analyzed by X-ray diffraction (XRD) and scanning electron microscope (SEM). Results indicated that nano $Si_3N_4$ and W content in alloy had remarkable effect on microstructure, microhardness and scratch resistant properties. Tungsten content in Ni-W and $Ni-W-Si_3N_4$ alloy ranged from 7 to 14 at.%. Scratch test results suggest that as compared to Ni-W only, $Ni-W-Si_3N_4$ prepared from Ni/W molar ratio of 1:1.5 dispersed with 20 g/L $Si_3N_4$ has shown the best result among different samples.