• Title/Summary/Keyword: Near ultra violet

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Sol-gel Derived-highly Transparent c-axis Oriented ZnO Thin Films (졸-겔법에 의한 c-축 배향성을 가진 고투과율 ZnO 박막의 제조)

  • Lee, Young-Hwan;Jeong, Ju-Hyun;Jeon, Young-Sun;Hwang, Kyu-Seog
    • Journal of Korean Ophthalmic Optics Society
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    • v.13 no.1
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    • pp.71-76
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    • 2008
  • Purpose: A simple and efficient method to prepare nanocrystalline ZnO thin film with pure strong UV emission on soda-lime-silica glass substrates by low-temperature annealing was improved. Methods: Crystal structural, surface morphological, and optical characteristics of nanocrystalline ZnO thin films deposited on soda-lime-silica glass substrates by prefiring final annealing process at 300$^{\circ}C$ were investigated by using X-ray diffraction analysis, field emission-scanning electron microscope, scanning probe microscope, ultraviolet-visible-near infrared spectrophotometer, and photoluminescence. Results: Highly c-axis-oriented ZnO films were obtained by prefiring at 300$^{\circ}C$. A high transmittance in the visible spectra range and clear absorption edge in the ultra violet range of the film was observed. The PL spectrum of ZnO thin film with a deep near band edge emission was observed while the defect-related broad green emission was nearly quenched. Conclusions: Our work will be possibly adopted to cheaply and easily fabricate ZnO-based optoelectronic devices at low temperature, below 300$^{\circ}C$, in the future.

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In-situ rf treatment of multiwall carbon nanotube with various post techniques for enhanced field emission

  • Ahn, Kyoung-Soo;Kim, Jun-Sik;Kim, Ji-Hoon;Kim, Chae-Ok;Hong, Jin-Pyo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.859-862
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    • 2003
  • Well-aligned multiwall carbon nanotubes (MWCNTs) were prepared at low temperature of 400 $^{\circ}C$ by utilizing a radio frequency plasma-enhanced chemical vapor deposition (rf-PECVD) system. The MWCNTs were treated by an external rf plasma source and an ultra-violet laser in order to modify structural defect of carbon nanotube and to ablate possible contamination on carbon nanotube surface. Structural properties of carbon nanotubes were investigated by using a scanning electron microscopy (SEM), Raman spectroscopy, Fourier transformer Infrared spectroscopy (FTIR) and transmission electron microscope (TEM). In addition, the emission properties of the MWNTs were measured for the application of field emission display (FED) in near future. Various post treatments were found to improve the field emission property of carbon nanotubes.

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Luminescent properties of magnesium thiogallate phosphor with green emission for LEDs

  • Kim, Kyung-Nam;Kim, Jae-Myung;Choi, Kyoung-Jae;Park, Joung-Kyu;Kim, Chang-Hae
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1331-1333
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    • 2005
  • A magnesium thiogallate phosphor doped with europium was prepared by solid-state method. This phosphor has green emission near 535 nm due to the allowed transition from $4f^65d$ at an excitation state $(T_{2g})$ to $4f^7 (^8S_{7/2}) at a ground state of $Eu^{2+}$ ion. This phosphor shows a wide excitation spectrum from ultra violet (300 nm) to bluish green (515 nm).

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Correlation Between Deposition Parameters and Photoluminescence of ZnO Semiconducting Thin Films by Pulsed laser Deposition (PLD증착 변수에 따른 II-VI족 화합물 ZnO 반도체 박막의 발광 특성 연구)

  • 배상혁;윤일구;서대식;명재민;이상렬
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.3
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    • pp.246-250
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    • 2001
  • ZnO thin films for light emission device have been deposited on sapphire and silicon substrates by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of355 nm. In order to investigate the emission properties of ZnO thin films, Pl measurements with an Ar ion laser a light source using an excitation wavelength of 351 nm and a power of 100 mW are used. All spectra were taken at room temperature by using a grating spectrometer and a photomultiplier detector. ZnO exhibited Pl bands centers around 390, 510 and 640 nm, labeled near ultra-violet(UV), green and orange bands. Structural properties of ZnO thin films are analyzed with X-ray diffraction(XRD).

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Effective Refractive Index of Dye-Sensitized Solar Cell Using Transmittance and Reflectance Measurements (투과 및 반사율 측정을 이용한 염료감응태양전지의 유효 굴절률 모델링)

  • Kim, Hyeong Seok;Lee, Joocheol;Shin, Myunghun
    • Current Photovoltaic Research
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    • v.3 no.3
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    • pp.91-96
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    • 2015
  • Optical modeling and characterization of transparent dye-sensitized solar cells (DSC) are presented to design and estimate DSC devices numerically. In order to model the inhomogeneous active layer of DSC, the porous structure of titanium oxide ($TiO_2$) and dye mixture, we prepared films consisting of layer by layer of the DSC's basic materials sequentially, and characterized the optical parameters of the films with the effective refractive index, which was extracted from the transmittance and reflectance measurements in ultra violet to near infra-red range. By using the effective refractive index, we made the optical model for DSC, and demonstrated that the optical model based on effective refractive index can be used to design and evaluate the performance of transparent-type DSC modules.

Emission Properties of ZnO Grown by PLD (PLD로 증착한 ZnO 박막의 발광 특성 분석)

  • Bae, Sang-Hyuck;Lee, Sang-Yeol
    • Proceedings of the KIEE Conference
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    • 2000.11c
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    • pp.422-424
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    • 2000
  • ZnO thin films for light emission device have been deposited on sapphire and silicon substrates by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of 355 nm. In order to investigate the emission properties of ZnO thin films, PL measurements with an Ar ion laser as a light source using an excitation wavelength of 351 nm and a power of 100 mW are used. All spectra were taken at room temperature by using a grating spectrometer and a photomultiplier detector. ZnO exhibited PL bands centered around 390, 510 and 640 nm, labeled near ultra-violet (UV), green and orange bands. Structural properties of ZnO thin films are analized with X-ray diffraction (XRD).

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Light emission properties of ZnO thin films grown by pulsed laser deposition (펄스 레이저 증착법으로 제작한 ZnO 박막의 발광 특성)

  • 배상혁;이상렬
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.539-542
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    • 2000
  • ZnO thin films for light emission device have been deposited on sapphire and silicon substrates by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of 355 nm. In order to investigate the emission properties of ZnO thin films, PL measurements with an Ar ion laser as a light source using an excitation wavelength of 351 nm and a power of 100 mW are used. All spectra were taken at room temperature by using a grating spectrometer and a photomultiplier detector. ZnO exhibited PL bands centered around 390, 510 and 640 nm, labeled near ultra-violet (UV), green and orange bands. Structural properties of ZnO thin films are analized with X-ray diffraction (XRD).

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Spectroscopic Characterization of 400℃ Annealed ZnxCd1-xS Thin Films (400℃ 열처리한 삼원화합물 ZnxCd1-xS 박막의 분광학적 특성 연구)

  • Kang, Kwang-Yong;Lee, Seung-Hwan;Lee, Nam-Kwon;Lee, Jeong-Ju;Yu, Yun-Sik
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.26 no.1
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    • pp.101-112
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    • 2015
  • II~VI compound semiconductors, $Zn_xCd_{1-x}S$ thin films have been synthesized onto indium-tin-oxide(ITO) coated glass substrates using thermal evaporation technique. The composition ratio x($0{\leq}x{\leq}1$) was varied to fabricate different kinds of $Zn_xCd_{1-x}S$ thin films including CdS(x=0) and ZnS(x=1) thin films. Then, the deposited thin films were thermally annealed at $400^{\circ}C$ to enhance their crystallinity. The chemical composition and electronic structure of films were investigated by using X-ray photoelectron spectroscopy(XPS). The optical energy gaps of the samples were determined by ultra violet-visible-near infrared(UV-Vis-NIR) spectroscopy and were found to vary in the range of 2.44 to 3.98 eV when x changes from 0 to 1. Finally, we measured the THz characteristics of the $Zn_xCd_{1-x}S$ thin films using THz-TDS(time domain spectroscopy) system to identify the capability for electronic and optical devices in THz region.

Enhancing GEMS Surface Reflectance in Snow-Covered Regions through Combined of GeoKompsat-2A/2B Data (천리안 위성자료 융합을 통한 적설역에서의 GEMS 지표면 반사도 개선 연구)

  • Suyoung Sim;Daeseong Jung;Jongho Woo;Nayeon Kim;Sungwoo Park;Hyunkee Hong;Kyung-Soo Han
    • Korean Journal of Remote Sensing
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    • v.39 no.6_1
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    • pp.1497-1503
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    • 2023
  • To address challenges in classifying clouds and snow cover when calculating ground reflectance in Near-UltraViolet (UV) wavelengths, this study introduces a methodology that combines cloud data from the Geostationary Environmental Monitoring Spectrometer (GEMS) and the Advanced Meteorological Imager (AMI)satellites for snow cover analysis. The proposed approach aims to enhance the quality of surface reflectance calculations, and combined cloud data were generated by integrating GEMS cloud data with AMI cloud detection data. When applied to compute GEMS surface reflectance, this fusion approach significantly mitigated underestimation issues compared to using only GEMS cloud data in snow-covered regions, resulting in an approximately 17% improvement across the entire observational area. The findings of this study highlight the potential to address persistent underestimation challenges in snow areas by employing fused cloud data, consequently enhancing the accuracy of other Level-2 products based on improved surface reflectivity.

Simulation of Low Temperature Plasmas for an Ultra Violet Light Source using Coplanar Micro Dielectric Barrier Discharges

  • Bae, Hyowon;Lee, Ho-Jun;Lee, Hae June
    • Applied Science and Convergence Technology
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    • v.25 no.6
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    • pp.138-144
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    • 2016
  • The discharge characteristics of pulse-driven coplanar micro barrier discharges for an ultraviolet (UV) light source using Ne-Xe mixture have been investigated using a two-dimensional fluid simulation at near-atmospheric pressure. The densities of electrons, the radiative excited states, the metastable excited states, and the power loss are investigated with the variations of gas pressure and the gap distance. With a fixed gap distance, the number of the radiative states $Xe^*(^3P_1)$ increases with the increasing driving voltage, but this number shows weak dependency on the gas when that pressure is over 400 Torr. However, the number of the radiative states increases with the increase of the gap distance at a fixed voltage, while the power loss decreases. Therefore, a long gap discharge has higher efficiency for UV generation than does a short gap discharge. A slight change in the electrode tilt angle enhances the number of radiative species 2 or 3 times with the same operation conditions. Therefore, the intensity and efficiency of the UV light source can be controlled independently by changing the gap distance and the electrode structure.