• 한국정밀공학회지
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• 제27권3호
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• pp.9-17
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• 2010

The FPCB is used for electronic products such as LCD display. The process of manufacturing FPCB includes a cutting process, in which each single FPCB is cut and separated from the panel where a series of FPCBs are arrayed. The most-widely used cutting method is the mechanical punching, which has the problem of creating burrs and cracks. In this paper, the cutting characteristics of the FPCB have been experimented using Nd:YAG DPSS UV laser as a way of solving this problem. To maximize the industrial application of this laser cutting process, test samples of the multilayered FPCB have been chosen as it is actually needed in industry. The cutting area of the FPCB has four different types of layer structure. First, to cut the test sample, the threshold laser cut-off fluence has been found. Various combinations of laser and process parameters have been made to supply the acquired laser cut-off fluence. The cutting characteristics in terms of the variation of the parameters are analyzed. The laser and process parameters are optimized, in order to maximize the cutting speed and to reach the best quality of the cutting area. The laser system for the process automation has been also developed.

• Journal of Electrical Engineering and Technology
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• 제6권2호
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• pp.275-279
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• 2011

Sterilization of Escherichia coli (E. coli) is examined using a unique pulsed ultra-violet (UV) elliptical reactor based on Nd:YAG laser resonator, UV radiation from a pulsed xenon flashlamp. The light from the discharge has a broadband emission spectrum extending from the UV to the infrared region with a rich UV contained. Sterilization method by using the UV light is fast, environment-friendly and it does not cause secondary pollution. A Nd:YAG laser resonator having elliptical shape has advantage of concentrating the radiation of the UV light at two foci as the quart sleeve filled with E. coli. The primary objective of this research is to determine the important parameters such as pulse per second (pps), the applied voltage for sterilizing E. coli by using an UV elliptical reactor. From the experiment result, the sterilization effect of UV elliptical reactor is better than that of UV cylindrical reactor, and it can be 99.9% of sterilization at 800V regardless of the pps within 10 minutes.

• 반도체디스플레이기술학회지
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• 제8권4호
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• pp.31-36
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• 2009

In this paper, the laser cutting characteristics of the flexible PCB using high power Nd:YAG UV laser were investigated. A specific FPCB model was selected for the experiment. Test sheets were made, which had equal materials and layer structure to those of the outline (OL) region and the contact pad (CP) region in the FPCB. The experiment is made up of two stages. In the first stage of the experiment, the laser cutting fluence was found, which is the threshold fluence to cut the test sheets completely. The laser cutting fluence of the OL sheet is $1781.26{\sim}1970.16\;J/cm^2$ and that of the CP sheet is $2109.34{\sim}2134.34\;J/cm^2$. In the second stage, cutting performance and its qualities were analyzed by the experiment. The laser cutting performance remained almost unchanged for all laser and process parameter sets. The average cutting width (top side/bottom side) of the OL sheet was $40.45\;{\mu}m/11.52\;{\mu}m$ and that of the CP sheet was $22.14\;{\mu}m/10.93\;{\mu}m$. However, the laser cutting qualities were different according to the parameters. The adjacent region of the cutting line on the OL sheet was carbonized as the beam speed was low and the overlap coefficient was high. The surface quality around the cutting line of the CP sheet was about the same. Carbonization and debris occurred on the surface of the cutting line. As a result of the experiment, the cutting qualities were better as the overlap coefficient was made low and beam speed high. Therefore, the overlap coefficient 2 or 3 is proper for the FPCB laser cutting.

• 한국재료학회지
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• 제18권3호
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• pp.113-116
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• 2008

A 532 nm Nd-YAG laser was applied to crystallize amorphous Si thin films in order to evaluate the applicability of a Nd-YAG laser to low-temperature polycrystalline Si technology. The irradiation of a green laser was controlled during the crystallization of amorphous Si thin films deposited onto glass substrates in a sophisticated process. Raman spectroscopy and UV-Visible spectrophotometry were employed to quantify the degree of crystallization in the Si thin films in terms of its optical transmission and vibrational characteristics. The effectiveness of the Nd-YAG laser is suggested as a feasible alternative that is capable of crystallizing the amorphous Si thin films.

• 한국광학회:학술대회논문집
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• 한국광학회 2003년도 제14회 정기총회 및 03년 동계학술발표회
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• pp.234-235
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• 2003

All solid-state UV lasers provide efficient, clean and semipermanent light sources for various applications, such as eye surgery, microchip lithography. $CsLiB_{6}O_{10}$ (CLBO) is one of the most suitable crystals for UV generation because of its small walk-off, large effective nonlinear susceptibility in UV region and high damage threshold. We produced fourth (266 nm) and fifth (213 nm) harmonic generation of an Nd：YAG laser (1064 nm) with $LiB_{3}O_{5}$ as a second harmonic generation medium and CLBO as a fourth harmonic and fifth harmonic mediums. (omitted)

• 한국방사선학회논문지
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• 제14권5호
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• pp.695-703
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• 2020

의료기술 발전으로 인해 의료기기 사용이 증가하는 추세이다. 의료기기 중 이식 및 치료를 위해 인체 내에 사용되는 경우가 많다. 그러므로 의료기관에서는 감염 예방을 위해 의료기기 형태와 재질에 따른 멸균법들이 다양하게 적용되고 있다. 뼈 이식에서 수산화인화석 재료가 가장 많이 보급되어 있다. 소형 의료기기에 알맞은 비전리방사선 중 고출력에너지를 가진 Q-switch Nd:YAG 레이저를 이용한 멸균법을 제시하고자 한다. 대장균과 충치균을 수산화인화석 디스크에 오염시켜, 출력1.5 W, 파장은 각각 자외선(266, 355 nm), 가시광선(532 nm), 적외선(1,064 nm), 1과 10 펄스를 각각 조사하였다, 본 연구에서 자외선 파장인 1.5 W, 266 nm, 10 pulse에서 멸균력을 가장 이상적으로 보여주었다. 다른 파장대인 적외선, 가시광선은 소극적 멸균력을 보였으며, 자외선 A와 자외선 C는 펄스에 따라 멸균 차이를 보였다. 레이저 멸균에서 파장 및 펄스에 따라 멸균 차이를 알 수 있었다.

• 한국환경과학회지
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• 제8권6호
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• pp.699-704
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• 1999

The Photodegradation efficient of total organic compounds in the drinking water has been studied using the methods of photocatalytic reaction and laser beam irradation. The results are summarized as follows; 1. The photodegradation efficiency of total organic compounds shows as $50\%\;to\;80\%$ as within one hour and after this the efficiency is decreased slowly. 2. The photodegradation efficiency of total organic compounds shows as 65 to $90\%$ within 3.3min. when Nd : YAG beam is irradiated to the water layer. 3. An excellent observation of the organic compound removal efficiency gives revealed in that case of the longest wavelength of 532nm is irradiated among the three kinds of laser beam sources of 532nm, 355nm and 266nm. 4. The organic compound removal efficiency shows high in the case of UV beam irradiation in the thin layer of water. However the efficiency is not depended on the thickness of water layer severely. 5. The removal efficiency of the organic compounds in the direct irradiation shows higher than the indirect irradiation in the case of UV beam, but the efficiency is not depended on the direction of irradiation in the case of Nd : YAG beam irradiation.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권2호
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• pp.103-106
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• 2000

ZnO is a wide-bandgap II-IV semiconductor and has a variety of potnetial applications. ZnO exhibits good piezoelectric, photoelectric and optical properties, and is a good candidate for an electroluminescence device. ZnO films have been deposited on (001) sapphire by PLD technique. Nd:YAG pulsed laser was operated at a wavelength of $\lambda=355nm$. The ZnO films were deposited at oxygen pressures from base to 500 mTorr. The substrate temperatures was increased from $200^{\circ}C\; to\;700^{\circ}C$ films showed strong UV emission by increasing the partial oxygen pressure. We have investigated the relationship between partial oxygen pressure and the intensity of UV emission.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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• pp.888-890
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• 1999

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition using a Nd:YAG laser with the wavelength of 355 nm at an oxygen pressure of 350 mTorr. In order to investigate the effect of the substrate temperature on the properties of ZnO thin films, the experiment has been performed at various substrate temperatures in the range of $200^{\circ}C$ to $700^{\circ}C$. According to XRD, (002) textured ZnO films of high crystalline quality have been obtained by pulsed laser deposition technique. However, the intensity of UV emission is mostly depending on the stoichiometry of ZnO films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.95-98
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• 1999

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition technique using a Nd:YAG laser with the wavelength of 355 nm. In order to investigate the effect of the deposition conditions on the properties of ZnO thin films at an oxygen pressure of 350 mTorr, the experiment has been Performed at various substrate temperatures in the range of 20$0^{\circ}C$ to $700^{\circ}C$. According to XRD, (002) textured ZnO films of high crystalline quality have been obtained and the intensity of UV emission was the highest at 40$0^{\circ}C$ substrate temperature.