• Electrical & Electronic Materials
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• v.10 no.8
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• pp.819-829
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• 1997

The microwave dielectric materials of the BaO-Nd$_2$O$_3$-TiO$_2$and BaO-(Sm, Nd)$_2$O$_3$-TiO$_2$system were synthesized by conventional ceramic processing and sintered 1220 to 140$0^{\circ}C$ for 2 hours respectively. Their crystallization and dielectric properties were examined. In the BaO-Nd$_2$O$_3$-TiO$_2$ and BaO-(Sm, Nd)$_2$O$_3$-TiO$_2$system. Nd$_2$Ti$_2$O$_{7}$ and (Sm, Nd)$_2$Ti$_2$O$_{7}$ were observed as a second phase respectively. The maximum relative dielectric constant were 79,99 for the BaO-Nd$_2$O$_3$-TiO$_2$system and 105.07 for the BaO-(Sm,Nd)$_2$O$_3$-TiO$_2$system and their Q-value were over 2000 at 3GHz.GHz.

• ETRI Journal
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• v.18 no.1
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• pp.15-27
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• 1996

The effects of $Nd_2O_3$ and $TiO_2$ addition on the microstructures and microwave dielectic properties of $BaO-Nd_2O_3-TiO_2$ system were investigated. $BaNd_2Ti_4O_{12}$ or $BaNd_2Ti_{5}O_{14}$ phases were observed for compositions based on BaO/$Nd_2O_3$ = 1 ratio. The compositions deviated from $BaO/Nd_2O_3=1$ ratio were composed of major phases of $BaNd_2Ti_4O_{12}$ or $BaNd_2Ti_5O_{14}$, and the compound of $Nd_2O_3$ and $TiO_2(Nd_2Ti_2O_7)$ or that of BaO and $TiO_2(BaTi_4O_9)$. The microstructure of ceramic with $BaO{\cdot}Nd_2O_3{\cdot}4TiO_2$ composition varied from spherical grains to needlelike grains with increasing sintering temperature. With increasing $Nd_2O_3$, the optimum sintering temperature with maximum density increased, and the dielectric constant(${\varepsilon}_r$) and quality factor(Q) decreased due to the formation of secondary phases. With increasing $TiO_2$, the optimum sintering temperature and the dielectric constant decreased with increased Q value. And the temperature coefficient of resonant frequency, ${\tau}_f$ shifted toward positive direction. The dielectric ceramics with $BaO/Nd_2O_3=1$ showed Q values of above 2000 and dielectric constants of above 80 at 3GHz.

• Journal of the Korean Ceramic Society
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• v.39 no.10
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• pp.977-980
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• 2002

Using the micro-pulling down method, $Nd_2O_3$ doped crack-free stoichiometric $LiNbO_3$ single crystals were grown in 1 mm diameter and 30∼35 mm length. The homogeneous distributions of $Nd_2O_3$ concentration were confirmed by the electron probe micro analysis. The absorption and photoluminescence spectra were measured with respect to the $Nd_2O_3$ doping.

• Journal of the Korean Ceramic Society
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• v.31 no.9
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• pp.995-1004
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• 1994

Phase relation and microwave dielectric properties of the system BaO.(Nd1-xSmx)2O3.TiO2 (n=4, 5) were studied. With n=5 (1 : 1 : 5), Ba2Ti9O20 and TiO2 formed in case of X$\leq$0.7, and Ba2Ti9O20 and Sm2Ti2O7 formed at X=1.0 as the second phases dispersed in fine-grained orthorhombic matrix phase. With n=4 (1 : 1 : 4). on the contrary, only fine grains of an ortho-rhombic phase were observed irrespective of Nd/Sm ratio. The compositions of these two stable orthorombic phases having distinct lattic constants even with the same Nd/Sm ratio were estimated as 4BaO.5(Nd1-xSmx)2O3.18TiO2 and BaO.(Nd1-xSmx)2O3.4TiO2 with n=5 and n=4 in the system BaO.(Nd1-xSmx)2O3.TiO2, respectively. Consequently the composition BaO.(Nd1-xSmx)2O3.5TiO2 lies in the compatible triangle of 4BaO.5(Nd1-xSmx)2O3.18TiO2 and the second phases mentioned above. The microwave dielectric properties (~4 GHz) of BaO.(Nd1-xSmx)2O3.5TiO2 can be controlled effectively by adjusting Sm content : with increasing X from 0 to 0.7, both dielectric constant and the temperature coefficient of resonant frequency decreased monotonically from 82 to 65 and from 91 (ppm/$^{\circ}C$) to -19(ppm/$^{\circ}C$), respectively, while unloaded Q(Qo) remained constant at about 2,600.

• Journal of the Korean Ceramic Society
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• v.39 no.1
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• pp.26-32
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• 2002

The effects of $Nd_2O_3$ addition to $Q{\cdot}f_{0}(GHz)$ ceramics with ${\varepsilon}_r$ of 126, $Q{\cdot}f_{0}(GHz)$ of 2240 and of $68\;ppm/^{\circ}C$ on their microwave properties were investigated. For the addition of 5 wt% $Nd_2O_3$, the dielectric constant (${\varepsilon}_r$) showed maximum value of 131, then decreased with the further addition of $Nd_2O_3$. $Q{\cdot}f_{0}(GHz)$ value was still increased to 3533 with 9 wt% $Nd_2O_3$ addition, it is influenced by densification of grain boundary. With more addition of $Nd_2O_3$ up to 18 wt%, the abnormal grain growth have influence on the decreasing of $Q{\cdot}f_{0}(GHz)$ value. But with the further addition of $Nd_2O_3$ over 25 wt%, the $Q{\cdot}f_{0}(GHz)$ value was again increased by the effect of the second phase ($Nd_2Ti_2O_7$) forming. The temperature coefficient of resonant frequency (${\tau}_f$) was decreased from $+\;68\;ppm/^{\circ}C$ with the addition of $Nd_2O_3$, reached $0\;ppm/^{\circ}C$ at 12 wt% addition, and became negative with the further addition of $Nd_2O_3$. The optimum microwave dielectric properties were obtained for $0.3CaTiO_3-0.7(Li_{1/2}Nd_{1/2})TiO_3$ with 9 wt% $Nd_2O_3$ sintered at $1425^{\circ}C$ for 3 hrs. The dielectric constant (${\varepsilon}_r$), the $Q{\cdot}f_{0}(GHz)$ value, and the temperature coefficient of resonant frequency (${\tau}_f$) were 108, 3533, and $+\;6\;ppm/^{\circ}C$, respectively.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1254-1256
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• 1994

0.15$(Ba_{0.95}Sr_{0.05})$O-0.15$(Sm_{2(1-x)}Nd-{2x})O_3-0.7TiO_2 (x=0{\sim}10[m/o])$ ceramics were fabricated by mixed-oxide method. Microwave dielectric properties was investigated with the contents of $Nd_2O_3$. Increasing the contents of $Nd_2O_3$ from 0 to 6[m/o], sintered density was increased 5.53 to $5.68[g/ cm^3]$. In the specimen with contents of $Nd_2O_3$(6[m/o]), dielectric content was maximum value of 78.14 and decreased with increasing the contents of $Nd_2O_3$. Quality factor was increased with the contents of $Nd_2O_3$.

• Korean Journal of Materials Research
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• v.8 no.7
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• pp.659-663
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• 1998

The effect of Bi-substitution in $BaO.(Nd_{1-x}Bi_x)_2O_3.4TiO_2$ ceramic was studied on the formation of crystal phases, microstructure, and microwave dielectric properties. $BaO.(Nd_{1-x}Bi_x)_2O_3.4TiO_2$, solid solution (0$\leq$x$\leq$0.2) were formed by Bi-substitution into the Nd site of $BaO.(Nd_{1-x}Bi_x)_2O_3.4TiO_2$ ceramics. Average grain size increased with Bi-substitution. Dielectric constant(${\varepsilon}_r$) increased from 84 to U8, and the temperature coefficient of resonant frequency(${\tau}_f$) decreased from 44 ppm/$^{\circ}C$ to -30 ppm/$^{\circ}C$ when Bi contents increased up to x=0.2 in $BaO.(Nd_{1-x}Bi_x)_2O_3.4TiO_2$ solid solutions. $BaO.(Nd_{1-x}Bi_x)_2O_3.4TiO_2$ solid solutions with x=0.04~0.08 showed the most superior microwave dielectric properties, those are ${\varepsilon}_r$= 89-92, Q . f = 5855~6091 GHz, and (${\tau}_f$)= -7.5-7.5 ppm/$^{\circ}C$.

• Applied Chemistry for Engineering
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• v.24 no.3
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• pp.227-230
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• 2013

The phase change of $(U_{1-x}Nd_x)_3O_8$ powder produced by oxidation of Nd-doped $UO_2$ pellet at $500^{\circ}C$ was investigated by high temperature oxidation heat treatment at $900{\sim}1500^{\circ}C$ under an air atmosphere. The XRD analysis results showed that the formation of $(U_{1-y}Nd_y)O_{2+z}$ phase and $U_3O_8$ phase from metastable $(U,Nd)_3O_8$ phase initiated at a temperature of $1000^{\circ}C$. The relative integrated intensity of $(U_{1-y}Nd_y)O_{2+z}$ phase to $U_3O_8$ phase increased with increasing of the oxidation temperature from 1100 to $1500^{\circ}C$. And also, it was found from the SEM observation that the particle size of $(U_{1-y}Nd_y)O_{2+z}$ phase increased with increasing of the oxidation temperature. However, electrone probe X-ray microanalyzer (EPMA) analysis results showed that Nd contents in $(U_{1-y}Nd_y)O_{2+z}$ phase decreased with increasing of the oxidation temperature. This behavior on the ground of XRD, SEM, and EPMA analysis data could be interpreted in terms of the transportation of U ions from $U_3O_8$ phase into $(U_{1-y}Nd_y)O_{2+z}$ phase through the interface of two phases during high temperature oxidation.

• Journal of the Korean Ceramic Society
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• v.35 no.8
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• pp.775-782
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• 1998

This experiment is third study concerning BaO-{{{{ { { Pr}_{ 2} O}_{3 } }}-{{{{ { TiO}_{2 } }} (Ln=Sm, Nd, Pr, La..) system which is known to show a high dielectric constant and Q value in microwave dielectric materials. The process of cry-stallization and the microwave dielectric properties of the specimens sintered at 1220-140$0^{\circ}C$ for 2 hr was investigated in the BaO-(Na,{{{{ { { Pr})_{2 }O }_{3 } }}-{{{{ { TiO}_{2 } }} as well as BaO-{{{{ { { Pr}_{ 2} O}_{3 } }}-{{{{ { TiO}_{2 } }} system. The single phase BaPr2Ti5O14 and Ba(Nd,{{{{ { { Pr})_{2 }O }_{3 } }}Ti5O14 was finally formed from the Pr2Ti2O7 (Nd, Pr)2Ti2O7 as a secondary phase in the BaO-{{{{ { { Pr}_{ 2} O}_{3 } }}-{{{{ { TiO}_{2 } }} and BaO-(Nd, {{{{ { { Pr})_{2 }O }_{3 } }}-{{{{ { TiO}_{2 } }} system respectively The dielectric constant of the specimens sint-ered at 1280~131$0^{\circ}C$ showed the maximum value as 105(BaO-{{{{ { { Pr}_{ 2} O}_{3 } }}-{{{{ { TiO}_{2 } }} system) and 88 (BaO-(Nd,{{{{ { { Pr})_{2 }O }_{3 } }}-{{{{ { TiO}_{2 } }} system) and the Q values of them showed higher value than 1800 which are due to the maximum den-sity. However the dielectric properties of the specimens sintered at higher temperature than 131$0^{\circ}C$ were reduced due to the increases of pore which were resulted from the sudden grain growth.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.603-606
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• 2004

ZnO varistor ceramics were fabricated with variation of addition of $Nd_2O_3$ amount and the sintering temperature was $l150^{/circ}C$. The average grain sizes were showed decreased from $13.8{\mu}m$ to $4.7{\mu}m$, and varistor voltages were increased from 398 V to 657 V by added amount of $Nd_2O_3$. Nonlinear coefficient a of all were with increasing the amount of $Nd_2O_3$ more than 60, in case of added on 0.1mol% $Nd_2O_3$ was 87. And leakage current were less than $1_{\mu}A$ with applied at 82% of varistor voltage. The clamping voltage ratio of the specimes added 0.1mol% $Nd_2O_3$ was 1.38 at applied 25A [$8/20{\mu}s$]. In the specimen added 0.1mol% $Nd_2O_3$, endurence of surge current and deviation of varistor voltage were 7000A/$cm^2$, $\Delta-2.08%$, respectively.