• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.7
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• pp.562-566
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• 2001

The effects of MnO$_2$ addition on the properties in Pb(Mg$_{1}$3/Nb$_{2}$3/)O$_3$ relaxor ferroelectrics were studied in the phase transition temperature range from -4$0^{\circ}C$ to 11$0^{\circ}C$. Specimens were made via solid state processing method. Dielectric properties, piezoelctric properties, electric-field-induced strain were examined to clarify the effect of MnO$_2$ addition in 0.9MN-0.1PT. As the amount of MnO$_2$ increases, the maximum dielectric constant and the dielectric loss decreases. Q$_{m}$ increased by increasing the doping contents of Mn. When 0.5wt% MnO$_2$ was doped, Q$_{m}$ increased from 95 to 480. The electric-filed-induced strain and polarization decreases as the amount of MnO$_2$ increases. From the experimental results, it was suggested that Mn behaves as an ferroelectric domain pinning element.ent.

• The Korean Journal of Ceramics
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• v.5 no.1
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• pp.1-11
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• 1999

The effect of aliovalent dopents, $Nb_3O_5$ and MnO, on the grain growth kinetics of 12 mol% ceria stabilized tetragonal zirconia polycrystals (Ce-TZP) was studied. All specimens were sintered at $1550^{\circ}C$ for 20 minutes prior to annealing at different temperatures to study grain growth kinetics. Grain growth kinetics of Ce-TZP and 1 mol% $Nb_2O_5$ doped Ce-TZP (Ce-TZP/$Nb_3O_5$) during annealing at 1475, 1550, and $1600^{\circ}C$ adequately matched with square law $(D^2-D_\;o^2=k_at)$. However, grain growth in 1 mol% MnO suppressed grain growth in Ce-TZP by drag force exerted by $Mn^{+2}$ ions which segregated strongly to the positively-charged grain boundaries of Ce-TZP, $Nb_2O_5$ enhanced grain growth by increasing the concentration of vacancies of $Zr^{+4}$ ion and $Ce^{+4}$ ions. Surface analysis with X-ray photoelectron spectroscopy (XPS) showed the segregation of Mn+2 ions to grain boundaries. The kinetics of grain growth obtained in the base Ce-TZP and the Ce-TZPs with the aliovalent dopants were examined in the context of impurity drag effect and space charge effect.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.10
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• pp.906-910
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• 2008

$(K_{0.5}Na_{0.5})NbO_3$ (NKN) ceramics doped with $Li_{2}CO_3$ as sintering aids were manufactured in order to develop the low temperature sintering ceramics for piezoelectric device. The sintering aids were proved to lower the sintering temperature of doped NKN ceramics due to the effect of $Na_{2}CO_{3}-Li_{2}CO_3$ liquid phase. All the specimens showed the orthorhombic phase without secondary phase. And also, the piezoelectric properties of specimens were improved with increasing $Li_{2}CO_3$ contents. At sintering temperature of $930^{\circ}C$, the density, electromechanical coupling factor (kp), mechanical quality factor (Qm) and dielectric constant(${\epsilon}_{\gamma}$), piezoelectric constant of 0.3 wt.% $Li_{2}CO_3$ added specimen showed the optimum values of $4.255 g/cm^3$, 0.37, 234, 309, 136 pC/N, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.339-343
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• 2005

Pt-$SrBi_2Nb_2O_9(SBN)-Pt-Y_2O_3-Si$ gate field effect transistors (MFMISFETs) have been fabricated and the SBN thin films are rapid thermal annealed in oxygen plasma. The grain size of the SBN becomes 4 times much larger than that of furnace annealed SBN films even at the same annealing temperature of $700^{\circ}C$, remnant polarization value of Pt-SBN-Pt is improved by 2 times. Using the rapid grain growth of SBN for the MFM-ISFET, memory window and programming characteristics of on/off states are fairly well improved.

• Journal of the Korean Ceramic Society
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• v.35 no.5
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• pp.505-511
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• 1998

The silicide formation mechanisms of Co/Hf and Co/Nb bilayer on (100) Si have been investigated. We ob-served that crystallographic orientationso f the 500$^{\circ}C$ formed cobalt silcides were different each other with the varying intermediate layers. Epitaxial and non-epitaxial CoSi2 formed simultaneously in Co/Hf/(100Si. While only non-epitaxial CoSi2 formed in Co/Nb/(100) Si. The reason why the crystallographic orientation of CpSi2 is different for those two systems seemed to be relate to the formation and decomposition of stable reaction barriers at high temperature. The stable reaction barrier formed at high temperature could control the uniform diffusion of Co atoms which enables epitaxial growth of CoSi2.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.216-217
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• 2005

In this paper, in order to develop Pb-free piezoelectric ceramics, $(Li_{0.05}Na_{0.57}K_{0.38})NbO_3$ ceramic was fabricated with the variation of $Bi_2O_3$ addition. Piezoelectric properties of the ceramic were varied with the amount of $Bi_2O_3$ addition and showed the maximum kp value at.0.2 wt% $Bi_2O_3$ addition. Qm of $Bi_2O_3$ added ceramics showed lower values than the non-added ceramics, however, the kp was increased by the addition of $Bi_2O_3$ up to 0.2 wt%. At the sintering temperature of 1110$^{\circ}C$ and the calcination temperature of 850$^{\circ}C$, the optimal values of density=4.52g/$cm^3$, kp=0.47, $\varepsilon_r$=400 were obtained.

• Transactions on Electrical and Electronic Materials
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• v.13 no.6
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• pp.297-300
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• 2012

Lead-free (1-x)$(Na_{0.5}K_{0.5})NbO_3-xLiNbO_3$, i.e., NKN-LNx (x=0.0, 0.1, 0.2, 0.3, 0.4 mol) was prepared using the conventional solid state reaction method. The effects of LN mixing on the ferroelectric properties of NKN-LNx ceramics were studied using a dielectric constant and P-E (Polarization-electric field) measurements. Ferroelectricity was observed in the composition for x approximately varying between 0.0 and 0.4. Minimum remanent polarization $2P_r=5C/cm^2$ was achieved in the composition for x = 0.2. The ferroelectric phase transition temperature $T_C$ increased with increasing LN content. The ferroelectric phase transition of NKN-LNx ($x{\geq}0.1$) is a second-order phase transition, and that of NKN-LNx ($x{\leq}0.2$) is a first-order phase transition. These results indicate that the ferroelectric phase transition temperature of NKN-LNx change from that of second-order to weak first-order phase transition according to the LN content.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.985-986
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• 2006

The epitaxial $KTa_{0.524}Nb_{0.446}Ti_{0.03}O_3$ films with 3% Ti were investigated. Titanium (+4) substitution on the Nb/Ta site should reduce dielectric losses of KTN: Ti film by introducing an acceptor state. This acceptor state traps electrons due to oxygen vacancies that form during oxide film growth. KTN:Ti films were grown using pulsed laser deposition, and then annealed at different temperatures in oxygen ambient. The crystallinity, and surface morphology of KTN:Ti film were investigated using x-ray diffraction, and atomic force microscopy. The dielectric properties of Ti doped KTN films measured for unannealed and annealed films will be reported. Tunability and dielectric loss of as-deposited KTN:Ti film were determined to be 10% and 0.0134, respectively. For films annealed at $800^{\circ}C$ and $900^{\circ}C$, the dielectric loss decreased but with a decrease in tunability as well.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.285-289
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• 2011

In this study, lead-free $(K_{0.5}Na_{0.5+X})(Nb_{0.96}Sb_{0.04})O_3+0.2mol%La_2O_3+1.2mol%$ $K_4CuNb_8O_{23}$ (X= 0~0.025) ceramics were fabricated by normal sintering method at $1060^{\circ}C$ for 5 h. Microstructures, piezoelectric and dielectric properties of specimens were investigated with special emphasis in the influence of Na excess addition. The grain size of specimen was slightly decreased with increasing Na content. In the 2 [mol%] Na excess addition of NKNS ceramics, density, electromechanical coupling factor, piezoelectric constant and electromechancal quality factor of specimen were found to reach the optimum values of 4.25 [$g/cm^3$], 0.4357, 154.43 [pC/N] and 580, respectively.

• Korean Journal of Materials Research
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• v.12 no.5
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• pp.369-374
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• 2002

To investigate the corrosion behavior of Zr-1.0Nb-xSn (x=1.0, 1.5, 2.0 and 2.5wt. %)alloy system, the corrosion tests of Zr-1.0Nb-xSn alloys were carried out in steam at $400^{\circ}C$ for 125 days and in 70ppm LiOH solution at $360^{\circ}C$ for 180 days. The matrix microstructures of the test specimens were analyzed using TEM and the oxide structures on the test specimens were analyzed using XRD. It was found from the analyses that the more Sn content the alloy had, the faster it was corroded and with the increase of Sn content in the alloy the fraction of $t-ZrO_2$ to $m-ZrO_2$ was decreased. It was also found that the alloys having more Sn showed more dislocation density than those having less.