• Journal of the Korean Ceramic Society
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• v.34 no.8
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• pp.791-796
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• 1997

The influence of Ti/Sr ratio on abnormal grain growth of Nb-doped SrTiO3 was investigated. For specimens which were isothermally sintered at temperatures above 144$0^{\circ}C$, the nucleation and growth rates of abnormal grain growth were decreased with increasing Ti/Sr ratio. But the onset time of abnormal grain growth was increased with increasing Ti/Sr ratio. The cross-section of abnormally grown grains was mostly hexagonal. When the specimens were quenched in air after they reached their setting temperatures at a heating rate of 3$^{\circ}C$/min, the onset temperature of abnormal grain growth was increased with increasing Ti/Sr ratio and the final grain size was independent of Ti/Sr ratio. The cross-section of abnormally grown grains was mostly rectangular.

• Nuclear Engineering and Technology
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• v.33 no.2
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• pp.192-200
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• 2001

Hydride blisters were formed on the outer surface of Zr-2.5Nb pressure tube by a non- uniform steady thermal diffusion process. A thermal gradient was applied to the pressure tube with a heat bath kept at a temperature of 415$^{\circ}C$ and an aluminum cold finger cooled with flowing water of 15$^{\circ}C$. Optical microscopy and tree-dimensional laser profilometry were used to characterize the hydride blisters with different hydrogen concentrations and thermal diffusion time. Hydride blisters were expected to start at a hydrogen concentration of 30 - 70 ppm and a thermal diffusion time of 4 - 6$\times$10$^{5}$ sec. The hydride blister size increases with higher hydrogen concentrations and longer thermal diffusion time . Some of the samples revealed cracks on the hydride blisters. The ratio of hydride blister depth to height was estimated as approximately 8: 1.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.405-408
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• 1997

The microwave dielectric properties of CuO and CdO addition of BiNbO$_4$ceramics were investigated. As the content of CdO increased, sintered density and quality factor is decreased. With increase in sintering temperature, the dielectric constant and quality factor is increased. In case of specimen sintered at 96$0^{\circ}C$ with 0.03 wt% CuO and CdO, the microwave dielectric properties obtained were dielectric constant of 41.2, quality factor (Q$\times$f) of 6, 500, temperature coefficient of resonant frequency of ppm/$^{\circ}C$.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.254-254
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• 2012

The purposed of this work was to determine surface charateristics of anodized Ti-30Nb-xTa alloys with Ta content. Samples were prepared by arc melting, followed by followed by homogenization for 12 hr at $1000^{\circ}C$ in argon atmosphere. The electrolyte for anodization treatment was prepared by mixing 465ml $H_2O$ with 35M $H_3PO_4$ and anodized at 180V to 220V. The microstructures of the alloys were examined by X-ray diffractometer (XRD) and optical microscopy (OM). Surface characteristics of anodized Ti-30Nb-xTa alloys was investigated by potentiodynamic test and potentiostatic in 0.9% Nacl solution at $36.5{\pm}1^{\circ}C$. It was observed that the changed ${\alpha}$ phase to ${\beta}$ phase with Ta content.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.76-76
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• 2009

PZT세라믹스는 높은 압전특성과 우수한 큐리온도($400^{\circ}C$)를 보유하고 있어 오래시간에 걸쳐 주목받고 있다. 현재 압전변압기, 액츄에이터, 센서등의 압전소자는 PZT를 이용하여 제작하고 있지만 PZT는 고온 소결시 PbO의 휘발이 환경오염을 초래하며 인체의 유해하다는 연구결과가 나왔다. 이에 최근에는 PbO가 포함 되지않은 무연(lead-free)계 압전세라믹스가 주목받고 있다. 무연 압전 세라믹스의 종류로는 Bi-layer-structured ceramics, Bi-perovskite type ceramics, NKN base ceramics 가 존재하고 있다. 그 중 $(Na_{0.5}K_{0.5})NbO_3(NKN)$ 세라믹스는 높은 큐리온도와($400^{\circ}C$)와 높은 전기기계 결합계수(약 36%)를 보유하고 있어 많은 연구가 이루어 지고 있다. 하지만 NKN은 PZT에 비하여 치밀성이 낮으며 일반적인 산화물 소결방법으로는 밀도를 높이기가 어려운 단점이 존재한다. 이를 개선하기 위한 방법으로 hot pressing와 spak plasma sintering, RTGG와 같은 방법으로 밀도를 높일수 있지만 비용이 많이 들어 일반적으로 사용이 어렵다. 다른 방법으로 NKN에 첨가물을 넣는 방법을 사용하고 있는데 방법으로 $LiNbO_3$, $LiTiO_3$, $LiSbO_5$를 첨가하여 개선하는 방법이 있다. 본 실험은 첨가물을 넣는 방식으로 비화학양론적 $(Na_{0.5}K_{0.5})_{0.97}(Nb_{0.9}Ta_{0.1})O_3(NKNT)$조성에 CuO를 mol%로 변화주어 유전 및 압전 특성을 조사하였다.

• International Journal of Industrial Entomology and Biomaterials
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• v.11 no.2
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• pp.139-143
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• 2005

The implications of temperature (25, 30 and $35^{\circ}C$) and relative humidity (RH; 60, 70 and $80\%$) on the hatching rhythmicity and hatching parameters (percentage and duration) were studied in the silkworm, Bombyx mori L. under natural photoperiod (LD 12 : 12). Disease free layings (DFLs) of two pure silkworm breeds, Pure Mysore (PM, a multivoltine breed) and $NB_4D_2$ (a bivoltine breed), and their hybrid, $PM{\times}NB_4D_2$ were introduced into the experimental conditions on the $3^{rd}$ day of oviposition till completion of hatching. The hatching rhythm was predominantly diurnal under all temperature and humidity conditions, with peaks just after 'lights-on' phase (6 hrs). Extreme temperature and humidity conditions did not alter the hatching rhythmicity, but prolonged the hatching durations, extending it to the next day, coupled with reduced hatching percentage in PM and $PM{\times}NB_4D_2{\cdot}In\;NB_4D_2$, on the other hand, hatching did not extend to the next day. Hatching percentage in this breed, however, reduced below the economic level under high temperature and low humidity conditions. The high temperature and low humidity together, though did not alter the rhythmicity, seems to exert synergetic effect on the hatching percentage and its duration in the silkworm, B. mori.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.3
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• pp.233-239
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• 1995

$La_{1/3}NbO_3$ and $La_{1/3}TaO_3$ large single crystal was prepared by the infrared floating zone method and their crystal structure and dielectric properties were investigated from the viewpoint of A - site vacancy. In $La_{1/3}TaO_3$ crystal, the crystal symmetry and approximate lattice constants was tetragonal and a $\approx$ 0.397, b $\approx$ 0.397 and c $\approx$ 0.775 from the nonextinction and the reciprocal lattice point length seen on Weissenberg and Precession photographs. The jump of some $2/3La^{3+}$ ions leads to increase the moving paths due to the generation of new vacancies at middle empty sites and thus this result is confirmed to provoke the dielectric anomaly.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.70-73
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• 2001

MFIS(Metal-ferroelectric-insulator- semiconductor) structures using silicon oxynitride(SiON) buffer layers were fabricatied and demonstrated nonvolatile memory operations. Oxynitride(SiON) films have been formed on p-Si(100) by RTP(rapid thermal process) in O$_2$+N$_2$ ambient at 1100$^{\circ}C$. The gate leakage current density of Al/SiON/Si(100) capacitor was about the order of 10$\^$-8/ A/cm$^2$ at the range of ${\pm}$ 2.5 MV/cm. The C-V characteristics of Al/LiNbO$_3$/SiON/Si(100) capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 24. The memory window width was about 1.2V at the electric field of ${\pm}$300 kV/cm ranges.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.210-220
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• 2006

Dense $((Na_{0.5}K_{0.5})_{1-x}Li_x)(Nb_{0.8}Ta_{0.2})O_3$ ceramics were developed by conventional sintering process. The electrical properties of $((Na_{0.5}K_{0.5})_{1-x}Li_x)(Nb_{0.8}Ta_{0.2})O_3$ ceramics were investigated as a function of Li substitution. When the sample sintered at $1100^{\circ}C$ for 4 h with the Substitution of 2 mol% Li, electro-mechanical coupling factor ($k_p$) and piezoelectric coefficient ($d_{33}$) were found to reach the highest values of 0.42 and 210 pC/N, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.4
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• pp.148-153
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• 2001

New piezoelectric $Ca_{3}NbGa_{3}Si_{2}O_{14}$ (CNGS) single crystal was grown using the Czochralski technique. The crystal structure of CNGS was found to be isostructural with $A_{3}BC_{3}D_{2}O_{14}$. The unit cell parameters were a=8.087 and c=4.983 and the space group was P321. The distribution of each cation was found to be ordered in each site. Some piezoelectric properties of CNGS are showed.