• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.342-342
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• 2008

The low temperature sintering and microwave dielectric properties of ceramic/glass composites which were composed of ceramics in the $Bi_2(Zn_{1/3}Nb_{2/3})_2O_7$ and zinc borosilicate glass/bismuth-zinc borosilicate glass were investigated with a view to applying the microwave dielectrics to low temperature co-fired ceramics. The $Bi_2(Zn_{1/3}Nb_{2/3})_2O_7$ addition of 5 wt% ZBS and BZBS glass ensured a successful sintering below $900^{\circ}C$. In addition, pyrochlore phase was observed in the all composition. $Bi_2(Zn_{1/3}Nb_{2/3})_2O_7$ with 5 wt% BZBS glasss demonstrated 70 as the dielectric constant ($\varepsilon_r$), 2,500 GHz as the Q$\times$f value, and -40 ppm/$^{\circ}C$ as TCF.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.476-479
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• 2001

The microwave dielectric properties of [(Pb$_{1-x}$ Ba$_{x}$)$_{1}$2/La$_{1}$2/](Mg$_{1}$2/Nb$_{1}$2/)O$_3$ ceramics were investigated. When [(Pb$_{0.9}$Ba$_{0.1}$)$_{1}$2/La$_{1}$2/](Mg$_{1}$2/Nb$_{1}$2/)O$_3$ ceramics were sintered at 125$0^{\circ}C$ and 135$0^{\circ}C$ for 2hr, the microwave dielectric properties were obtained $\varepsilon$$_{r}$=64~80, Qxf=11,800~18,000. As a result, [(Pb$_{0.9}$Ba$_{0.1}$)$_{1}$2/La$_{1}$2/](Mg$_{1}$2/Nb$_{1}$2/)O$_3$ having $\varepsilon$$_{r}$=80, Qxf=11,800 (at 4 GHz) was developed.ed.eveloped.ed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.743-746
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• 2000

Metal-ferroelectric-insulator-semiconductor(MFIS) devices using Pt/$LiNbO_3$/Si structure were successfully fabricated. The dielectric constant of the AIN film calculated from the capacitance in the accumulation region in the capacitance-voltage(C-V) curve was about 8.2. The gate leakage current density of MIS devices using a aluminum electrode showed the least value of 1$\times$$1O^{-8}$A/$cm^2$ order at the electric field of 500kV/cm. The dielectric constant of $LiNbO_3$film on AIN/Si structure was about 23 derived from 1MHz capacitance-voltage (C-V) measurement and the resistivity of the film at the field of 500kV/cm was about 5.6$\times$ $1O^{13}$ $\Omega$.cm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.208-209
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• 2006

Sinterability and microwave dielectric properties of the $Zr1-x(Zn_{1/3}Nb_{2/3})xTiO_4$(x=4, 6) system ceramics have been investigated as functions of zinc-borosilicate(ZBS) glass contents and amount of $Zn_{1/3}Nb_{2/3}O_2$ substitution with a view to applying the composition to LTCC technology. The addition of 25 wt% ZBS glass ensured successful sintering below $925^{\circ}C$. With increasing ZBS glass and $Zn_{1/3}Nb_{2/3}O_2$ contents increased dielectric constant and sinterability but addition ZBS glass decreased the quality factor significantly due to the formation of an excessive liquid and second phases. The sintered $Zr4(Zn_{1/3}Nb_{2/3})6TiO_4$ system ceramics at $925^{\circ}C$ with 25 wt% ZBS glass demonstrated 27.7 in dielectric constant (${\varepsilon}_r$), 3,850 m quality factor($Q{\times}f_0$), and +6 ppm/$^{\circ}C$ in temperature coefficient of resonant frequency($\tau_f$).

• Corrosion Science and Technology
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• v.16 no.6
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• pp.317-327
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• 2017

The change in the oxidation behavior of three types of B-added ultrahigh strength martensitic steels containing Ti and Nb induced by applying constant cathodic current was investigated. In a 3% NaCl+0.3% $NH_4SCN$ solution, the overall polarization behavior of the three alloys was similar, and degradation of the oxide film was observed in the three alloys after applying constant cathodic current. A significant increase in the anodic current density was observed in the Nb-added alloy, while it was diminished in the Ti-added alloy. Both Ti and Nb alloying decreased the hydrogen overpotential by forming NbC and TiC particles. In addition, the thickest oxide film was formed on the Ti-added alloy, but the addition of Nb decreased the film thickness. Therefore, it was concluded that the remarkable increase in the anodic current density of Nb-added alloy induced by applying constant cathodic current density was attributed to the formation of the thinnest oxide film less protective to hydrogen absorption, and the addition of Ti effectively blocked the hydrogen absorption by forming TiC particles and a relatively thick oxide film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.298-298
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• 2007

Influence of $TiO_2$ on the dielectric properties of the $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic with 7 wt% zinc borosilicate(ZBS) glass was investigated as a function of the $TiO_2$ contents with a view to applying this system to LTCC technology. The $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic addition of 7 wt% ZBS glass ensured successful sintering below $900^{\circ}C$. But, TCF of $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic is large negative values, respectively, it is necessary to adjust to zero TCF for practical applications Therefore, the addition of materials having positive TCF, such as $TiO_2$, might be an effective method for the improvement. In general, increasing addition of $TiO_2$ increased dielectric constant and TCF but it decreased the sinterability and $Q{\tiems}f$ value significantly due to the dielectric property and high sintering temperature of $TiO_2$. $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic with 7 wt% ZBS glass and then addition 0.5 wt% $TiO_2$ sintered at $900^{\circ}C$ demonstrated 42 in the dielectric constant(${\varepsilon}_r$), 1,000 GHz in the $Q{\times}f$ value, and $10{\pm}5\;ppm/^{\circ}C$ in the temperature coefficient of resonant frequency(${\tau}_f$).

• Journal of the Korean Society for Heat Treatment
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• v.6 no.1
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• pp.17-25
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• 1993

The Cu - $Nb_3Sn$ composites wire as a superconducting material was prepared by in situ method as follow: Cu - 15wt.% Nb alloys which were melted in a high -frequency induction furnace and casted in bar were cold-worked up to the final diameter of 0.24 mm, electroplated with Sn, pre-treated in two steps and then diffused at $550{\sim}650^{\circ}C$ for 24 ~ 96 hrs. The overall $J_c$ and $T_c$ of the specimens were measured by the four point-probe method at 10 K in the magnetic field of 0 Tesla. The overall $J_c$ of the composites wire which diffused at $550^{\circ}C$ after pre-treating in two steps were generally higher than those of the wire at either $600^{\circ}C$ or $650^{\circ}C$. For the specimens diffused at $550^{\circ}C$, the overall $J_c$ were increased until 72 hrs. of diffusion time and then decreased. However, in case of diffusion at $600^{\circ}C$ and $650^{\circ}C$, the overall $J_c$ were gradually decreased from the beginning. The maximum overall $J_c$ obtained in this experiment was $1.3{\times}10^4\;A/cm^2$, which was measured for the specimen diffused at $550^{\circ}C$ for 72 hrs. When the specimens were diffused at $550^{\circ}C$ for 72 hrs, after pre-treating, the measured critical temperature, $T_c$ was 16.19 K. Similar $T_c$ value were obtained in other specimens regardless of diffusion time and temperature.

• Journal of the Korean Ceramic Society
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• v.19 no.4
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• pp.267-274
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• 1982

The sintering behavior and B-H loop properties of $Li_{0.5O4}$ with the addition of $Nb_2O_5$ and $V_2O_5$ have been investigated by observation of microstructures and measurement of semi-static hysteresis loops. The sintering temperature was lowered by the additions of $Nb_2O_5$ and $V_2O_5$ and the effect of $V_2O_5$ addition was greater than that of $Nb_2O_5$. The abnormal grain growth was observed at about 100$0^{\circ}C$(d:4.6g/㎤) and 85$0^{\circ}C$(d:4.5g/㎤) in the specimens with the addition of $Nb_2O_5$ and $V_2O_5$ respectively. The addition of $Nb_2O_5$ retulted in a large and uniform grain size, and the addition of $V_2O_5$ resulted in a uniform grain size but the final density was lower than that of the pure specimen. The squareness was increased and the coercive force was decreased by the addition of $Nb_2O_5$, and the squareness was decreased and the coercive force was increased by the addition of $V_2O_5$. These effects could be explained by a large and uniform grain size, and by a lower final density of specimens with the addition of $Nb_2O_5$ and $V_2O_5$ respectively.

• Transactions on Electrical and Electronic Materials
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• v.12 no.2
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• pp.72-75
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• 2011

In this study, $(K_{0.5}Na_{0.5})(Nb_{0.97}Sb_{0.03})O_3+0.9$ mol% $K_{5.4}Cu_{1.3}Ta_{10}O_{29}+x$ mol% $K_4CuNb_8O_{23}$ (x = 0, 0.2, 0.6, 0.8) ceramics were prepared by a conventional mixed oxide method. Their microstructure and electric properties were investigated. The secondary phase was made by virtue of $K_4CuNb_8O_{23}$ (KCN) addition in the $(K_{0.5}Na_{0.5})(Nb_{0.97}Sb_{0.03})O_3$ system ceramics. However, the sinterability of the ceramics increased with increasing $K_4CuNb_8O_{23}$ content. At the 0.6 mol% $K_4CuNb_8O_{23}$ added composition ceramics sintered at $1,060^{\circ}C$, kp and $d_{33}$ showed the optimum values of 0.39 and 145 pC/N, respectively, suitable for piezoelectric actuator application.

• Proceedings of the Korea Society for Energy Engineering kosee Conference
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• 1995.05a
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• pp.45-52
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• 1995

The photocatalytic activity of TiO$_2$ was investigated as a function of added amount of Nb$_2$O$_{5}$, heat treatment temperature and the decomposition rate of 1 mM dichloroacetic acid(DCA). Mixed oxides of TiO$_2$ and Nb$_2$O$_{5}$ was prepared by the sol-gel process. The addition of Nb$_2$O$_{5}$ into TiO$_2$ has deleterious effect on the decomposition rate of DCA, which was decreased as the amount of Nb$_2$O$_{5}$ was increased. The excess electrons due to the doping of Nb$_2$O$_{5}$ into TiO$_2$ can promote the reduction process instead of oxidation or recombination rate with electron holes. The most efficient photocatalyst was the one heat treated at 40$0^{\circ}C$ for an hour as far as the heat treatment temperature is concerned. The lower the pH of the solution, the higher the quantum yield.tum yield.