• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.638-644
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• 2008

The effects of $Nb_2O_5$ and $MnO_2$ on the positive temperature coefficient of resistivity (PTCR) behavior of lead-free $Ba_{0.99}(Bi_{1/2}Na_{1/2})_{0.01}TiO_3$ (BaBiNT) ceramics were investigated in order to fabricate a PTC thermistor available at high temperature of > $120^{\circ}C$. In particular, 0.05 mol% $Nb_2O_5$ added BaBiNT ceramic, which has significantly increased Curie temperature (Tc) of $160^{\circ}C$, showed good PTCR behavior; low resistivity at room temperature $(\rho_r)$ of $80.1{\Omega}{\cdot}cm$, a high $\rho_{max}/\rho_{min}$ ratio of $5.65{\times}10^3$ and a large resistivity temperature factor (a) of 18.5%/$^{\circ}C$. Furthermore, the improved $\rho_{max}/\rho_{min}$ of $6.48{\times}10^4$ and a of 25.4%/$^{\circ}C$ along with higher $T_c$ of $167^{\circ}C$ despite slightly increased $\rho_r$ of $569{\Omega}{\cdot}cm$, could be obtained for the BaBiNT + 0.05 mol% $Nb_2O_5$ + 0.02 wt% $MnO_2$ ceramic cooled down at a rate of $200^{\circ}C/h$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.3
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• pp.110-114
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• 2001

$0.7Ba(Mg{\frac}_{1}{3}Ta{\frac}_{1}{3})O_3-0.3Ba({\frac}_{1}{3}Nb{\frac}_{1}{3})O_3ceramics$ were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of $1500{\sim}1575[^{\circ}C]$ for 5 hours in air. The microwave dielectric properties of the specimens were investigated with sintering temperature. The 0.7BMT-0.3BCN ceramics showed typical XRD patterns of the complex perovskite structure. Dielectric constant and quality factor were increased with increasing the sintering temperature. In the case of the specimens sintered at $1575[^{\circ}C]$ for 5 hours, dielectric constant, quality factor and temperature coefficient of resonant frequency were good values of 28,23545 at 10[㎓] and -1.2 $[ppm/^{\circ}C]$, respectively.

• Korean Journal of Crystallography
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• v.4 no.2
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• pp.74-85
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• 1993

Single crystals of LiNbO3 have found extensive application in electro-optic and nonlinear optic devices. However, laser-induced refartive index inhomogeneities, which have been labeled opical damage impose limits on device optical damage in LiNbO3 is imporved if more than 4.5 rml% MgO is added to the melt The laser damage thrueshold increased as much as 100 times better then that of undoped crystals. The MgO doped cystal has thus been urterlsiv81y studied since then. In the study, Mgo:LiNbOs(MLA) single crystals dopsd with 0, 2.5, 5.0, 7.5, 10.0 mol% MgO have been grown by the czocrualski technique. The metls were prepared in the platinum crluible and 15∼20mm diameter crystals were grown with a length of 20∼30mm in a resitance heater. The growth rate was 2.5mm/hr, the rotation speed 15rpn. Before sawing MLN single crystals were annealed for 24 hours under atmosphere at a temperature of 1080℃. After sawing, we have found an annual ring cross section of MNA crystals only in the direction of perpendicilar to the c-axis. Nonuniform dispusion of MgO was pointed out that the cuties of the state of oxide were strongly affected by oxygen partial pressure in.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.5
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• pp.986-991
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• 2016

In this study, we prepared ITO thin films on $Nb_2O_5/SiO_2$ double buffer layer using DC magnetron sputtering method and investigated electrical and optical properties with various substrate temperatures (room temperature ~ $400^{\circ}C$). The resistivity showed a decreasing tendency, because crystallinity has been improved due to the enlarged grain size with increasing substrate temperature. ITO thin film deposited at $400^{\circ}C$ showed the most excellent value of resistivity and sheet resistance as $3.03{\times}10^{-4}{\Omega}{\cdot}cm$, $86.6{\Omega}/sq.$, respectively. In results of optical properties, average transmittance was increased but chromaticity ($b^*$) was decreased in visible light region (400~800nm) with increasing substrate temperature. Average transmittance and chromaticity ($b^*$) of ITO thin film deposited at $400^{\circ}C$ exhibited significantly improved results as 85.8% and 2.13 compared to 82.8% and 4.56 of the ITO thin film without buffer layer. Finally, we found that ITO thin film introduced $Nb_2O_5/SiO_2$ double buffer layer has a remarkably improved optical property such as transmittance and chromaticity due to the index matching effect.

• Journal of the Korean Chemical Society
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• v.35 no.4
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• pp.329-334
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• 1991

The x values and electrical conductivity of the nonstoichiometric compound NbO$_x$ have been measured in a temperature range 700$^{\circ}C$ to 1100$^{\circ}C$ under oxygen partial pressure of 2 ${\times}$ 10$^{-1}$ ∼ 1 ${\times}$ 10$^{-5}$ atm. The NbO$_x$ is a stoichiometrical compound of Nb$_2$O$_5$ under oxygen partial pressure higher than 1.0 ${\times}$ 10$^{-2}$ atm at the above temperature range. The x values were found to vary between 2.48491 and 2.49900 in a temperature range 700$^{\circ}C$ to 1100$^{\circ}C$ under oxygen partial pressure lower than 1 ${\times}$ 10$^{-3}$ atm. The enthalpy of the formation for x' in NbO$_{2.50000-x'}$(${\Delta}H_f$) increased of 15.98 to 17.26 kcal/mol under the conditions. The electrical conductivity (${\sigma}$) of the oxide varied from 10$_4$ to 10$_1$ ohm$_1$cm$_1$ in the above conditions. The activation energy for the conduction was about 1.7 eV. The oxygen pressure dependency of the conductivity (or 1/n value) was about -1/4. The nonstoichiometric conduction mechanism of the oxide has been discussed with the x' values, the ${\sigma}$ values, and the thermodynamic data.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.11
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• pp.77-82
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• 1990

The temperature and the composition dependence of the dielectric properties of the solid solution materials in the system $xBa(Zn_{1/3}Nb_{2/3})O_{3}\[BZN]-(1-x)\Sr(Zn_{1/3}Nb{2/3)O_{3}\[SZN]$ at microwave frequency was studied. The dielectric constant and unloaded Q were $40.5{\pm}0.5,5980{\pm}100$ respectively for BZN at 10 GHz and $36.9{\pm}0.5,2700{\pm}100$ for SZN at 10.2GHz. The temperature coefficient of the resonant frequency was $+27.5ppm/{\circ}C$ for BZN and $-39.1ppm/{\circ}C$ for SZN. The results also showed that 0.3 BZN-0.7 SZN is the most temperature-stable composition among xBZN-(1-x) SZN solid solutions. In this case, the dielectric constant, the unloaded Q and $\tau_{f}$ at 9.8GHz were $41.5{\pm}0.2,2920{\pm}100$ and $-3.5ppm/{\circ}C$, respectively.

• Journal of the Korean Ceramic Society
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• v.40 no.11
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• pp.1078-1084
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• 2003

In order to develop a new type of nonlinear optical materials or photocatlaysts, Na$_2$O-Nb$_2$ $O_{5}$-Te $O_2$ glasses were prepared using conventional melt quenching method, and the crystallization behaviors and optical properties of these glasses was investigated. The optical and physical properties for Na$_2$O-Nb$_2$ $O_{5}$-Te $O_2$ glasses are: refractive index, n=2.04$\pm$0.04; density, p (g/㎤)=4.87$\pm$0.58; optical energy band of the transmission cut-off wavelength, E$_{0}$ (eV)=3.14$\pm$0.04. The transparent glass ceramics consisting of the nanocrysatls were obtained when the Na$_2$O-Nb$_2$ $O_{5}$-Te $O_2$ glass was first heat-treated at 3$50^{\circ}C$ for 1 h and than at 40$0^{\circ}C$ for 1 h. A cubic crystalline phase consisting of the nano-crysatls transforms into a stable phase at temperature above 47$0^{\circ}C$ for 1 h.

• Journal of Mechanical Science and Technology
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• v.14 no.8
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• pp.830-835
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• 2000

The thermodynamical estimation of the interfacial reaction and the impact properties of $Nb/MoSi_2$ laminate composites containing SiC, $NbSi_2$ or $ZrO_2$ particles are investigated. Laminate composites, which comprise alternating layers of $MoSi_2$ with the particle and Nb foil, were fabricated by the hot press process. It is clearly found out that the interfacial reaction of $Nb/MoSi_2$ can be controlled by the addition of $ZrO_2$ particle to the $MoSi_2$ phase. The addition of $ZrO_2$ particle increases both the impact value and the sintered density of Nb/McSij, The suppression of the interfacial reaction is caused by the formation of $ZrSiO_2$ in $MoSi_2-ZrO_2$ matrix mixture.

• Proceedings of the Korean Nuclear Society Conference
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• 1998.05b
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• pp.148-153
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• 1998

핵연료 피복관용 신합금을 개발하기 위한 기초연구로서 Zr-xNb계 합금과, Zr-0.8Sn-xNb계 합금을 각각 4종씩 선정하였다. 이들 합금을 판재시편으로 가공한 뒤 Autoclave를 이용하여 36$0^{\circ}C$에서 부식 시험을 실시하였다. 부식과정에서 생성되는 산화막의 미세구조를 관찰하기 위해 천이 전 영역에서 동일두께를 갖도록 부식시편을 준비하여 산화막/금속계면에 대해 SEM관찰을 실시하였다. 또한 석출물의 크기와 부식과의 관계를 조사하기 위하여 부식전의 시편에 대해 TEM관찰을 실시하였다. Zr-xNb 2원계 합금에서는 Nb함량이 적을수록 부식저항성이 증가하는 경향을 보이는데, 0.2Nb가 첨가된 합금이 가장 우수한 부식저항성을 보였다. Zr-0.8Sn-xNb 3원계에서도 천이 전 영역에서는 2원계 합금과 마찬가지로 Nb함량이 적을수록 부식저항성이 증가하나, 천이 후 영역에서는 이런 경향이 바뀌는 것이 관찰되었다. 이는 Sn이 첨가됨으로서 Nb가 부식에 미치는 영향이 달라지기 때문이라 생각된다. 산화막 관찰결과, 순수 Zr은 결정립계를 따라서 산화막이 급격히 성장하는 반면에, Zircaloy-4합금은 매우 균일한 산화막 계면을 유지한다. Zr-xNb계 합금과 Zr-0.8Sn-xNb계 합금에서도 내식성이 우수한 합금은 균일한 산화막/금속 계면을 유지하는 것이 관찰되었다.

• Journal of the Korean Ceramic Society
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• v.31 no.12
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• pp.1443-1448
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• 1994

Pb(Mg1/3Nb2/3)O3-PbTiO3-BaTiO3 solid solution was formed by mixed-oxide method. The phase during formation was analysed by XRD and formation mechanism was investigated. While heat-treating Pb(Mg1/3Nb2/3)O3 composition, the first, Pb2Nb2O7 and Pb3Nb2O8 pyrochlore phases are formed, and finally Pb(Mg1/3Nb2/3)O3 perovskite phase with containing Pb3Nb4O13 pyrochlore phase is obtained at 80$0^{\circ}C$. When Pb(Mg1/3Nb2/3)O3 composition is modified with PbTiO3 which have strong ionic bonding and high tolerance factor, the amount of pyrochlore phase is decreased by increasing of stability in perovskite structure.