• Title/Summary/Keyword: Nb2O5

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Study on the Reaction Characteristics of Self-reducing $Nb_2O_5$ Briquettes (자기 환원성 $Nb_2O_5$ 브리켓의 반응특성 연구)

  • Kim M. S.;You B. D.;Wi C. H.;Yun D. J.;Choi S. O.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2005.05a
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    • pp.333-336
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    • 2005
  • The reduction behavior of $Nb_2O_5$ in aluminum containing self-reducing briquettes(SRNB) was investigated. The time required for slag/metal equilibrium was estimated as about 20 minutes from the addition of SRNB on to the surface of molten steel. The maximum yield of Nb was expected with the slag composition of $60\%CaO-40\%Al_2O_3$. When $CaCO_3$ was used as a flux, the oxidation loss of Al by $CO_2$ should be compensated, and the chemical equivalent ratio of Al to $Nb_2O_5$ of about 1.43 was required to maximize the yield of Nb.

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A Study on the Characteristics of Dye-Sensitized Solar Cell Using Nb2O5 Semiconductor Oxides (Nb2O5 반도체 산화물을 이용한 염료 감응 태양전지 특성 연구)

  • Kim, Haemaro;Lee, Don-Kyu
    • Journal of IKEEE
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    • v.23 no.1
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    • pp.330-333
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    • 2019
  • Various studies on dye-sensitized solar cells, which are cheaper to manufacture and have superior stability than silicon solar cells, are continuously conducted. In this study, the properties of dye-sensitized solar cells were studied using semiconductor oxides made by mixing $TiO_2$ and $Nb_2O_5$. By adding $Nb_2O_5$ in different proportions, the solar cell was made, and the surface area and electrical characteristics of this cell were measured. As $Nb_2O_5$ was added, the contact area of dye and electrolyte increased and the short-circuit current, open voltage, fill factor and conversion efficiency of dye-sensitized solar cells were confirmed to be improved.

Dielectric and Piezoelectric Properties of (Na,K)(Nb,Ta,Sb)O3 Ceramics doped with Nb2O5 (Nb2O5 첨가에 따른 (Na,K)(Nb,Ta,Sb)O3 세라믹스의 유전 및 압전 특성)

  • Byeon, Sun-Min;Yoo, Ju-Hyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.11
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    • pp.867-872
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    • 2012
  • In this study, in order to develop excellent lead free piezoelectric ceramics for piezoelectric actuators application, $Li_{0.04}(Na_{0.50}K_{0.50})_{0.96}[(Nb_{0.86}Ta_{0.10}Sb_{0.04})_{0.994}Co_{0.015}]O_3+0.0025SrO+0.15\;wt%K_2CO_3+x\;wt%Nb_2O_5$ (x = 0 - 0.5 wt%) (abbreviated as LNKNTSCS-xN) ceramics were fabricated by a conventional sintering technique. the phase structure, microstructure and electrical properties were investigated with a emphasis on the influence of the $Nb_2O_5$ content. High electrical properties of $d_{33}$=234 pC/N, kp=0.392, ${\varepsilon}_r$=1,395, ${\rho}=4.70g/cm^3$ were obtained from the specimen with x=0.4 wt%, which suggests that the composition ceramics is a promising lead-free piezoelectric material.

The Properties of Multi-Layered Optical Thin Films Fabricated by Pulsed DC Magnetron Sputtering (Pulsed DC 마그네트론 스퍼터링으로 제조된 다층 광학박막의 특성)

  • Kim, Dong-Won
    • Journal of the Korean institute of surface engineering
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    • v.52 no.4
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    • pp.211-226
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    • 2019
  • Optical thin films were deposited by using a reactive pulsed DC magnetron sputtering method with a high density plasma(HDP). In this study, the effect of sputtering process conditions on the microstructure and optical properties of $SiO_2$, $TiO_2$, $Nb_2O_5$ thin films was clarified. These thin films had flat and dense microstructure, stable stoichiometric composition at the optimal conditions of low working pressure, high pulsed DC power and RF power(HDP). Also, the refractive index of the $SiO_2$ thin films was almost constant, but the refractive indices of $TiO_2$ and $Nb_2O_5$ thin films were changed depending on the microstructure of these films. Antireflection films of $Air/SiO_2/Nb_2O_5/SiO_2/Nb_2O_5/SiO_2/Nb_2O_5/Glass$ structure designed by Macleod program were manufactured by our developed sputtering system. Transmittance and reflectance of the manufactured multilayer films showed outstanding value with the level of 95% and 0.3%, respectively, and also had excellent durability.

A Study on the Carbothermic Reduction of Nb-Oxide and the refining by Ar/Ar-$H_2$ plasma and Hydrogen solubility of Nb metal (Ar/Ar-$H_2$ 플라즈마에 의한 Nb금속제조와 Nb금속의 수소용해)

  • Jeong, Yong-Seok;Hong, Jin-Seok;Kim, Mun-Cheol;Baek, Hong-Gu
    • Korean Journal of Materials Research
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    • v.3 no.6
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    • pp.565-574
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    • 1993
  • The Ar/Ar- $H_{2}$ plasma method Lvas applied to reduce and refine high purity Nb metal. Inaddition, the reaction between molten Nb metal and hydrogen were also analyzed in the Ar-(20%)$H_{2}$plasma. The metallic Nb of 99.5wt% was obtained at the ratio of $C/Nb_{2}O_{5}$=5.00 in the Ar plasma reductionand the $O_2$ loss from the thermal decomposition of niobium oxides did not take place. In the Ar-(20%)Hi plasma the metallic Nb of 99.8wt% was produced at the ratio of $C/Nb_{2}O_{5}$=4.80. It was observedthat a major reaction of the deoxidation was the reaction with H, Hi, and a deoxidation by the evaporationof $NbO_x$ did not occur but a mass loss of Nb did by a "splash" effect. The deoxidation reaction rateobeyed the 1st order reaction kinetics and the reaction rate constant(k') of deoxidation was $7.8 \times 10_{-7}$(m/sec).The solubility of hydrogen in Nb metal was 60ppm and it was larger than the solubility of molecularstate hydrogen by 40ppm in the Ar-(20%)$H_{2}$ plasma method. A saturation was within 60sec anda hydrogen content was reduced below lOppm by a Ar plasma re-treatment.by a Ar plasma re-treatment.

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The Effect of $V_2O_5$ Addition on the Microwave Dielectric Properties of $Zn_3Nb_2O_8$ Ceramics ($V_2O_5$ 첨가가 $Zn_3Nb_2O_8$ 마이크로파 유전체 특성에 미치는 영향)

  • Yun, Ho-Byung;Lee, Tae-Kun;Hwang, Yeon
    • Korean Journal of Crystallography
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    • v.17 no.1
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    • pp.24-32
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    • 2006
  • The microwave dielectric properties of $Zn_3Nb_2O_8\;with\;V_2O_5$ addition were investigated. The addition of $V_2O_5$ enhanced the sinterability of $Zn_3Nb_2O_8$, which resulted in high density of $Zn_3Nb_2O_8$ ceramic greater than 95% of the theoretical value when sintered at $900^{\circ}C$ for 4 hours. X-ray diffraction analysis of sintered $Zn_3Nb_2O_8$ ceramic showed no second phase with $V_2O_5$ addition. Dielectric permittivity(${\varepsilon}_r$) and quality factor($Q{\times}f$) varied with both density at different sintering temperature and $V_2O_5$ addition. Dielectric permittivity, quality factor and temperature coefficient($T_{cf}$) of the two mole of $V_2O_5\;added\;Zn_3Nb_2O_8$ that was sintered at $900^{\circ}C$ were 21.4, 40,000, $-54ppm/^{\circ}C$, respectively.

Structural Characterization of the (TEX)$Sr_2Co_0.5Nb(Ta)_0.5O_4$(/TEX) and (TEX)$Sr_3CoNb(Ta)O_7$(/TEX)

  • Jo, Han Sang;Ri-Zhu Yin;Ryu, Gwang Hyeon;Yu, Cheol Hyeon
    • Bulletin of the Korean Chemical Society
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    • v.21 no.7
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    • pp.679-684
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    • 2000
  • The Sr2Co0.5Nb(Ta)0.5O4 and Sr3CoNb(Ta)O7 compounds, both with Ruddlesden-Popper structures, have been synthesized by the ceramic method at $1150^{\circ}C$ under atmospheric pressure. The crystallographic structure of the compounds was assigned to the tetr agonal system with space group 14/mmm by X-ray diffraction(XRD) Rietveld refinement. The reduced lattice volume and lattice parameters increased as the Ta with 5d substitutes for the Nb with 4d in the compounds. The Co/Nb(Ta)O bond length has been determined by X-ray absorption spectroscopic(EXAFS/XANES) analysis and the XRD refinement. The CoO6,octahedra were tetragonally distorted by elongation of Co-O bond along the c-axis. The magnetic measurement shows the compounds Sr2Co0.5Nb(Ta)0.5O4 and Sr3CoNb(Ta)O7 have paramagnetic properties and the Co ions with intermediate spin sates between high and low spins in D4h symmetry. All the compounds showed semiconducting behavior whose electrical conductivity increased with temperature up to 1000 K. The electrical conductiviy increased and the activation energy for the conduction decreased as the number of perovskite layers increased in the compounds with chemical formula An+1BnO3n+1.

Effect of SiO2 and Nb2O5 Buffer Layer on Optical Characteristics of ITO Thin Film

  • Kwon, Yong-Han;Jang, Gun-Eik
    • Transactions on Electrical and Electronic Materials
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    • v.16 no.1
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    • pp.29-33
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    • 2015
  • This paper presents the results of the optical characteristics of ITO thin film with different buffer layer thicknesses of $SiO_2$ and $Nb_2O_5$ for touch sensor application. $SiO_2$ and $Nb_2O_5$ buffer layers were deposited using RF magnetron sputtering equipment. The buffer layers were inserted between glass and ITO layers. In order to compare with the experimental results, the Essential Macleod Program (EMP) was adopted. Based on EMP simulation, the [$Nb_2O_5{\mid}SiO_2{\mid}ITO$] multi-layered thin film exhibited high transmittance of more than 85% in the visible region. The actual experimental results also showed transmittance of more than 85% in the visible region, indicating that the simulated results were well matched with the experimental results. The sheet resistance of ITO based film was about $340{\Omega}/sq$. The surface roughness maintained a relatively small value within the range of 0.1~0.4 nm when using the $Nb_2O_5$ and $SiO_2$ buffer layers.

The effect of $Nb_{2}O_{5}$ Addition on Microstructure and Piezoelectric characteristics of PNW-PMN-PZT Ceramics ($Nb_{2}O_{5}$첨가가 PNW-PMN-PZT세라믹스의 미세구조 및 압전특성에 미치는 영향)

  • Kim, Chul-Hee;Oh, Dong-On;Hong, Jae-Il;Ryu, Ju-Hyun;Ryu, Sung-Lim;Park, Chang-Yub
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.280-283
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    • 2002
  • In this study, the effects of $Nb_{2}O_{5}$ addition on microstructure and piezoelectric characteristics of PNW-PMN-PZT ceramics were investigated. As $Nb_{2}O_{5}$ addition amount is increased, grain size is gradully decreased. At 0.3wt%$Nb_{2}O_{5}$ addition composition ceramics, maximum density, tetragonality and piezoelectric characteristics were obtained.

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