• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.1
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• pp.1-4
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• 1991

The applicability of $LiNbO_{3}$ as a substrate for fabrication of Ti-indiffused waveguide electro-optic devices is limited. Ti diffuses comparatively in congruently melting $LiNbO_{3}$; the Curie temperature of this material is too low to permit diffusion temperatures much above $1100^{\circ}C$ without the necessity of re-poling the crystal. Both of hese difficulties could be eliminated by incorporating certain dopants in $LiNbO_{3}$. Crystals of $LiNbO_{3}$ doped with Ti and Mg were grown and evaluated. The electroptic coefficients and birefringence of $LiNbO_{3}$ doped crystals were measured at ${\lambda}=.6328$ and $1.32\;$\mu{m}$. Curie temperatures were measured. The Curie temperature of both undoped and Ti-doped $LiNbO_{3}$ was $1130^{\circ}C$; that for Mg-doped $LiNbO_{3}$ was $30^{\circ}$ higher. From these data, a composition for the crystals was estimated. Thermogravimetric data confirmed this estimate and showed that the composition of Mg : $LiNbO_{3}$ was $49.3{\pm}0.2mole%\;Li_{2}O$ ; the composition of the undoped and Ti : $LiNbO_{3}$ samples was $48.6{\pm}0.2mole%$. Diffusion of Ti into both Mg-doped and Ti-doped $LiNbO_{3}$ crystals was studied as a function of $Li/NbO_{3}$ ratio and temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.378.1-378.1
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• 2014

In this study, we investigated that the resistance switching characteristics of Nb-doped HfO2 films with increasing Nb doping concentration. The Nb-doped HfO2 based ReRAM devices with a TiN/Nb-doped HfO2/Pt/Ti/SiO2 were fabricated on Si substrates. The Nb-doped HfO2 films were deposited by reactive dc magnetron co-sputtering at $300^{\circ}C$ and oxygen partial ratio of 60% (Ar: 16sccm, O2: 24sccm). Microstructure of Nb-doped HfO2 films and atomic concentration were investigated by XRD, TEM, and XPS, respectively. The Nb-doped HfO2 films showed set/reset resistance switching behavior at various Nb doping concentrations. The process voltage of forming/set is decreased and whereas the initial current level is increased in doped HfO2 films. However, the switching properties of Nb-doped HfO2 were changed above the specific doping concentration of Nb. The change of resistance switching behavior depending on doping concentration was discussed in terms of concentration of non-lattice oxygen and micro-structure of Nb-doped HfO2.

• Journal of the Korean Ceramic Society
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• v.36 no.12
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• pp.1335-1341
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• 1999

The electrical conductivity ($\sigma$) of TiO2 doped with 0.05-4.0mol% Nb2O5 was measured in the oxygen partial pressure range of 10-17 to 100 atm and temperature range of 1100 to 130$0^{\circ}C$ to investigate the electrical properties and defect types. The oxygen partial pressure dependence of the electrical conductivity (log$\sigma$/logPo2) above 110$0^{\circ}C$ was divided into the four regions. From these experimental results the following defect regions were proposed ; 1) Magneli phase(extended defect) 2) reduced rutile region where intrinsic defect predominates 3) nearly stoichiometric region which is independent on the oxygen partical pressure and 4) overstoichiometric region which is not observed in pure TiO2 The electrical conductivity of Nb-doped TiO2 depended on the doping content the oxygen partial pressure and the measuring tem-perature.

• Journal of the Korean Ceramic Society
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• v.36 no.2
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• pp.116-121
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• 1999

0.5 wt%Nb-doped SrTiO3(Nb: STO) thin film was prepared on MgO(100) single crystal substrates by Pulsed Laser Deposition (PLD). The Crystallinity and the orientation of Nb:STO thin films were characterized by XRD with changing the thin film processing condition-oxygen partial pressure, substrate temperature, deposition time and the distance between target and substrate. The orientation of Nb:STO thin film showed (100), (110) and (111) orientations at the substrate temperature of $700^{\circ}C$. The lattice parameter of Nb:STO decreased with increasing Po2 and showed 0.3905 nm at Po2=100 Pa, which was similar to that of the bulk. The thickness of Nb:STO thin film increased with increasing the deposition time and with decreasing the distance between target and substrate.

• Journal of the Korean Ceramic Society
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• v.24 no.6
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• pp.579-585
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• 1987

The effects of flux KCl and dopant Nb2O5 on the PTCR characteristics of BaTiO3 prepared by molten salt synthesis method have been investigated. As the amount of dopant Nb2O5 is over the solubility limit in BaTiO3, the room-temperature resistivity increases, and the PTCR effect and the grain size decrease. The variation of the amount of flux KCl slightly influences on the room-temperature resistivity, PTCR effect and grain size in Nb2O5 doped BaTiO3, but BaTiO3 ceramics prepared by the method of molten salt synthesis show larger PTCR effect than those of conventional calcining of mixed oxides.

• Bulletin of the Korean Chemical Society
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• v.34 no.9
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• pp.2563-2564
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• 2013

• Journal of the Korean Ceramic Society
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• v.22 no.4
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• pp.61-65
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• 1985

$BaTiO_3$ powders doped with $BaTiO_3$ and $Nb_2O_5$ at 9$0^{\circ}C$ for 1hr. were synthesized by Direct Wet Process. These powders were very homogeneous and fine particle size. To obtain the highe PTCR effect AST($1/3Al_2O_3$.$3/4SiO_2$.$1/4TiO_2$) and $MnO_2$ were added in the semiconduc-ting $BaTiO_3$. In this case $Bi_2O_3$ and $MnO_2$ were used in the form of $Bi(NO)_3$ and $MnCl_2$.$4H_2O$ solution for Direct Wet Process. $BaTiO_3$ doped Nb2O5 and $MnO_2$ demostrated greater PTCR effect than $BaTiO_3$ doped $Nn_2O_5$ only.

• Journal of the Korean Ceramic Society
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• v.33 no.10
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• pp.1117-1123
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• 1996

• The Korean Journal of Ceramics
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• v.4 no.2
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• pp.68-71
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• 1998

The effect of Mn and Nb additions on the electrical properties of BaTiO$_3$ has been studied by means of equilibrium electrical conductivity as a function of temperature, oxygen partial pressure(Po$_2$) and composition. If the manganese ion is added to the normal Ti site, i.e. BaTi$_{1-x}Mn_xO_{\delta-6}$, the equilibrium conductivity shows strong evidence of acceptor-doped behavior. The conductivity minimum, corresponding to the transition from oxygen excess, p-type behavior to oxygen deficient, n-type behavior with decreasing Po$_2$, is displaced to lower Po$_2$ and is broadened and flattened. The partial replacement of Mn ion with Nb decreases the acceptor-doped effect and the total replacement exhibits a typical donor-doped behavior. It was confirmed that unlike undoped or other acceptor-doped behavior. It was confirmed that unlike undoped or other acceptor-doped samples, for the p-type region, the electrical conductivity follows the 1/6th power dependence of oxygen partial pressure.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.100-105
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• 1998

This paper describes the preparation of Pt-and $TiO_2$-doped $Nb_2O_5$ thin film by Ion-Beam-Enhanced Deposition. Platinum and titanium doping, and Nb2O5 deposition were carried out in situ. The dependence of oxygen sensing properties on the amounts of Pt and Ti dopant in the $Nb_2O_5$ film was investigated. There were the highist sensitivity, the lowest temperature coefficient and the shortest responce time at doping of 5 mol% $TiO_2$ and 0.3 mol%Pt