• Title/Summary/Keyword: Nb substitution

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Piezoelectric and Dielectric Characteristics of $((Na_{0.5}K_{0.5})_{1-x}Li_x)(Nb_{0.8}Ta_{0.2})O_3$ Ceramics using Conventional Solid State Sintering method (상용 소결법을 이용한 $((Na_{0.5}K_{0.5})_{1-x}Li_x)(Nb_{0.8}Ta_{0.2})O_3$ 세라믹스의 압전 및 유전 특성)

  • Kim, Min-Soo;Kim, Sin-Woong;Oh, Seok;Jeong, Soon-Jong;Min, Bok-Ki;Song, Jae-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.210-220
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    • 2006
  • Dense $((Na_{0.5}K_{0.5})_{1-x}Li_x)(Nb_{0.8}Ta_{0.2})O_3$ ceramics were developed by conventional sintering process. The electrical properties of $((Na_{0.5}K_{0.5})_{1-x}Li_x)(Nb_{0.8}Ta_{0.2})O_3$ ceramics were investigated as a function of Li substitution. When the sample sintered at $1100^{\circ}C$ for 4 h with the Substitution of 2 mol% Li, electro-mechanical coupling factor ($k_p$) and piezoelectric coefficient ($d_{33}$) were found to reach the highest values of 0.42 and 210 pC/N, respectively.

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Piezoelectric and Dielectric Characteristics of Low Loss Low Temperature Sintering PMN-PNN-PZT Ceramics with the amount of PNN Substitution (PNN 치환량에 따른 저손실 저온소결 PMN-PNN-PZT 세라믹스의 압전 및 유전특성)

  • Yoo, Ju-Hyun;Kim, Kook-Jin;Jeong, Yeong-Ho;Lee, Su-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.9
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    • pp.766-770
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    • 2007
  • In this study, in order to develop low temperature sintering ceramics for multilayer piezoelectric actuator, $0.07Pb(Mn_{1/3}Nb_{2/3})O_3-xPb(Ni_{1/3}Nb_{2/3})O_3-(0.93-x)Pb(Zr,Ti)O_3$ ceramics system were fabricated using $Li_2CO_3-Bi_2O_3-CuO$ sintering aids and the specimens were sintered at $930^{\circ}C$. Thereafter, their piezoelectric and dielectric characteristics were investigated according to the amount of PNN substitution. At 9 mol% PNN substitution, density, electromechanical coupling factor ($k_p$), dielectric constant, mechanical quality factor ($Q_m$) and piezoelectric constant ($d_{33}$) showed the optimum value of $7.86g/cm^3$, 0.60, 1640, 1323 and 387 pC/N, respectively. It is considered that these values are suitable for piezoelectric divece application such ad multilayer piezoelectric actuator and ultrasonic vibrator with pure Ag internal electrode.

Microwave Dielectric Properties of $Mg_4(Nb_{2-x}V_x)O_9$ Ceramics Produced by a Hydrothermal Method (수열합성법에 의해 제조한 $Mg_4(Nb_{2-x}V_x)O_9$ 세라믹스의 마이크로파 유전특성)

  • Lee, Sang-Wook;Lim, Sung-Woo;Kim, Yoon-Tae;Bang, Jae-Cheol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.300-301
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    • 2007
  • $Mg_4(Nb_{2-x}V_x)O_9$ (MNV) ceramics have been prepared by a hydrothermal method. Low-temperature sintering of $Mg_4(Nb_{2-x}V_x)O_9$ (MNV) by V substitution for Nb was discussed in this study. A $Q{\cdot}f_0$ value of 103,297 GHz with a ${\varepsilon}_r$ of 12.56 and a ${\tau}_f$ of $-10.53\;ppm/^{\circ}C$ was obtained when x=0.0625 after sintering at $1100^{\circ}C$ for 5 h.

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Dielectric Properties of Ti-doped K(Ta,Nb)O3 Thin Films for Tunable Microwave Applications

  • Bae Hyung-Jin;Koo Jayl;Hong Jun-Pyo
    • Journal of Electrical Engineering and Technology
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    • v.1 no.1
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    • pp.120-126
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    • 2006
  • Ferroelectric materials have been widely investigated for high density dynamic random access memories, opto-electrics, and tunable microwave devices due to their properties. In this study, we have investigated the dielectric properties of Ti doped $K(Ta,\;Nb)O_3$ thin films. By doping Ti Into the $K(Ta,Nb)O_3$ system, Ti with a valence value of +4 will substitute Ta or Nb ions with a valence value of +5. This substitution will introduce an acceptor state. Therefore, this introduced acceptor state will reduce dielectric loss by trapping electrons. Using 3% Ti-doped $K(Ta,Nb)O_3\;targets,\;K(Ta,Nb)O_3$:Ti films were grown in MgO(001) crystals using pulsed laser deposition. First, growth conditions were optimized. A reduction in the loss tangent was observed for Ti-doped $K(Ta,Nb)O_3$ relative to undoped films, although a reduction in tunability is also seen. The crystallinity, morphology, and tunability of $K(Ta,Nb)O_3$:Ti films are reported.

Dielectric and Piezoelectric Properties of PNN-PMN-PZT Ceramics for High Power Piezoelectric Transformer (고출력 압전변압기용 PNN-PMN-PZT 세라믹스의 유전 및 압전 특성)

  • 황상모;류주현;홍재일
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.7
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    • pp.597-601
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    • 2002
  • In this study, the structural, dielectric and piezoelectric properties of $Pb[(Ni_{1/3}Nb_{2/3})_x-(Mn_{1/3}Nb_{2/3})_{0.09-x}-(Zn_{0.505}Ti_{0.495)_0.91]O_3$ (x=0, 0.01, 0.02, 0.03, 0.04, 0.05) system ceramics were investigated to develop the composition ceramics for piezoelectric transformer. All the specimens were sintered at $1250^{\circ}C$ and its physical properties were measured, and the results are as follows : With increasing PNN substitution for PMN-PZT system, dielectric constant was increased and electro-mechanical coupling factor($k_p$) was increased to 0.62 at 5 mol% while mechanical quality factor(Qm) was decreased.

M-Zn (M = Sb, V, and Nb) Substituted Strontium Hexaferrites with Enhanced Saturation Magnetization for Permanent Magnet Applications

  • Sapoletova, Nina;Kushnir, Sergey;Ahn, Kyunghan;An, Sung Yong;Choi, Moonhee;Kim, Jae Yeong;Choi, Changhak;Wi, Sungkwon
    • Journal of Magnetics
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    • v.21 no.3
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    • pp.315-321
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    • 2016
  • M-Zn (M = Sb, V, Nb) substituted M-type strontium hexaferrites were prepared by a ceramic method. The phase composition, morphology and magnetic properties were studied by x-ray diffractometry, scanning electron microscopy and vibrating sample magnetometry. Saturation magnetization increases with a substitution up to 75.0 emu/g (2.5 % higher compared to unsubstituted hexaferrite) and then decreases with a further substitution. A coercive field of substituted hexaferrite powders with highest saturation magnetization is more than 3 kOe. Substituted strontium hexaferrite powders prepared in this work are a rare example of high $M_S$ compositions without doping rare-earth elements and would be a promising candidate for a permanent magnet application.

Behavior of Intermetallic Compound Formation in Al-25Nb system and (Al,X)-25Nb (X= Cr, Cu, Fe, Mn) systems by Mechanical Alloying Method (A1-25Nb계와 (A1,X)-25Nb계 (X = Cr, Cu, Fe, Mn)의 기계적 합금화에 의한 금속간 화합물의 형성 거동에 관한 연구)

  • Choi, Jae-Woong;Kang, Sung-Goon
    • Korean Journal of Materials Research
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    • v.11 no.9
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    • pp.733-739
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    • 2001
  • In Al-25Nb binary system, it was observed only formation of $D0_{22}$ $Al_3Nb$ intermetallic compound after 5hr milling but it was not observed formation of meta stable phase like L1$_2$ phase. In this state, $D0_{22}$ $Al_3Nb$ fabricated had nano sized grain of approximately 20nm. Ternary systems, transition metals such as Cr, Cu, Fe, Mn were added 6~12at.% as substitution of Al, showed formation of $D0_{22}$ $Al_3Nb$ like Al-25Nb binary system. In Al- l2Cu-25Nb system, it was observed that broad XRD pattern like amorphization of Al and not observed formation of $D0_{22}$ $Al_3Nb$ after 5hr milling. But there was mixed phase of a lot of amorphous Al and little $D0_{22}$ $Al_3Nb$ through TEM. In the states of unalloyed, 5~7hr milling time, those showed exothermic reaction at 35$0^{\circ}C$, which was formation of $D0_{22}$ $Al_3Nb$ like Al-25Nb binary system. With increasing milling time to 10hr, $D0_{22}$ $Al_3Nb$ was transformed to mixed phase of amorphous and nanocryatlline, having approximately 10nm grain but the meta stable $Al_3Nb$ was not fabricated by adding transition metals.

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Low-temperature sintering and dielectric properties of the $1-xBiNbO_4-xZnNb_2O_6$ ceramics ($1-xBiNbO_4-xZnNb_2O_6$ 세라믹스의 저온소결 및 유전특성)

  • Kim, Yun-Han;Yoon, Sang-Ok;Kim, Kwan-Soo;Lee, Joo-Sik;Kim, Kyung-Mi;Park, Jong-Guk
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.260-260
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    • 2007
  • Low-temperature sintering and dielectric properties of the $1-xBiNbO_4-xZnNb_2O_6$ ceramics (x=0.3, 0.5, and 0.7) with 10 wt% zinc borosilicate (ZBS) glass was investigated as a function of the substitution of $ZnNb_2O_6$ with a view to applying this system to LTCC technology. The all composition addition of 10 wt% ZBS glass ensured a successful sintering below $900^{\circ}C$. The the amount of $ZnNb_2O_6$ on $ZnNb_2O_6$ ceramics increased the $Q{\times}f$ values, but it decreased the sinterability and dielectric constant due to the higher $Q{\times}f$ value and sintering temperature of $ZnNb_2O_6$ than that of $ZnNb_2O_6$ ceramics. The increase of $ZnNb_2O_6$ content from 0.3 to 0.7 in the $1-xBiNbO_4-xZnNb_2O_6$ ceramics with 10 wt% ZBS glass sintered at $900^{\circ}C$ demonstrated 30~20 in the dielectric constant (${\varepsilon}_r$), 3,500~4,500 GHz in the $Q{\times}f$ value.

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