• 한국세라믹학회지
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• 제33권11호
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• pp.1260-1266
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• 1996

The effects of SiO2 MnO2 and sintering atmospheres (O2, N2) on the piezoelectric properties and densification behaviors of Pb0.98Cd0.02Zr0.36Ti0.39Ni0.083Nb0.167O3 were investigated. The addition of SiO2 to the system enhanced the rate of densification but supressed the rate of grain growth. On the other hand the addition of MnO2 to the system did not nearly affect the rate of densification but increased slightly the rate of grain growth The densification of Pb0.98Cd0.02Zr0.36Ti0.39Ni0.083Nb0.167O3 containing of SiO2 or MnO2 was promoted with increasing the partial pressure of O2. The relative dielectric constant ($\varepsilon$r) and piezoelectric constant (d33) of Pb0.98Cd0.02Zr0.36Ti0.39Ni0.083Nb0.167O3 containing of SiO2 or MnO2 sintered under O2 atmosphere were higher than under N2 atmosphere. Whereas the mechanical quality factor (Qm) of specimens sintered under O2 atmosphere were lower than under N2 atmosphere. Thus the sintering atmosphere of O2 and N2 in Pb0.98Cd0.02Zr0.36Ti0.39Ni0.083Nb0.167O3 containing of SiO2 or MnO2 acted as donor and acceptor respectively. As the amount of SiO2 increased the relative dielectric constant ($\varepsilon$r) and piezoelectric constant (d33) of Pb0.98Cd0.02Zr0.36Ti0.39Ni0.083Nb0.167O3 but the mechanical quality factor (Qm) did not nearly change, In the case of the addition of MnO2 to the system the relative dielectric constant ($\varepsilon$r) and piezoelectric constant (d33) of Pb0.98Cd0.02Zr0.36Ti0.39Ni0.083Nb0.167O3 sintered under O2 atmosphere decreased rapidly with increasing the amount of MnO2 but they were unchanged with increasing the amount of MnO2 under N2 sintering atmosphere. Therefore the differences of the relative dielect-ric constant ($\varepsilon$r) and piezoelectric constant (d33) due to sintering atmosphere were diminished as the amount of MnO2 increased.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2004년도 춘계학술강연 및 발표대회 강연 및 발표논문 초록집
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• pp.42-43
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• 2004

• 한국재료학회:학술대회논문집
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• 한국재료학회 1996년도 재료학회 추계학술발표회
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• pp.136-136
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• 1996

• 한국재료학회:학술대회논문집
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• 한국재료학회 2002년도 추계학술발표강연 및 논문개요집
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• pp.160-160
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• 2002

• 한국세라믹학회지
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• 제30권8호
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• pp.671-677
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• 1993

Effects of PbTiO3 addition on dielectric properties and extent of PbO loss in Nd-doped Pb(Mg1/3Nb2/3)O3 system were investigated. As the proportion of dopping increased, the phase transition temperature shifted to low region, and the dielectric constant at room temperature decreased rapidly. But as the proportion of PbTiO3 increased, the phase transition temperature shifted to high retion, and the dielectric constant at room temperature increased. The substitution of Nd3+ for Pb2+ decreased the amount of PbO evaporation, therefore the sample sintered well in case of only 1 mole% adding excess PbO.

• 한국세라믹학회지
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• 제30권11호
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• pp.925-932
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• 1993

The perovskite phase in PZN-PMN-PT (Pb(Zn, Mg)1/3Nb2/3O3-PbTiO3) pseudoternary ceramics was stabilized by the addition of excess constituent divalent oxides (PbO, MgO and ZnO). The excess addition of 5mol% MgO or 7.5mol% PbO fully stabilized the perovskite phase. The enhanced diffuse phase transition (DPT) and the decrease in the electrical resistivity observed in the presence of excess ZnO or MgO were interpreted in terms of the additional formation of negatively charged, short-range ordered 1:1 domains with a concomitant generation of charge carriers, holes.

• 한국세라믹학회지
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• 제24권1호
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• pp.63-69
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• 1987

Effect of MoO3 additiion on the semiconductive BaTiO3 ceramics doped with 0.2 mole% Nb2O5 and their frequency characteristics have been investigated on the view of intergranular barrier layer model through the observation of changes in their electrical properties. The resistivity increases with the increase of MoO3 addition, but the capacitance, the frequency dependence of capacitance and the effect of positive temperature coefficient of resistivity (PTCR) decrease. It is explained by the possible increase in the thickness of potential barrier due to the formation of insulating layer and thus decrease in the degree of energy band bending. Both the PTCR effect and resistivity decrease with the increase of frequency due to the possible elimination of barrier layer at the grain boundary.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.405-408
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• 1997

The microwave dielectric properties of CuO and CdO addition of BiNbO$_4$ceramics were investigated. As the content of CdO increased, sintered density and quality factor is decreased. With increase in sintering temperature, the dielectric constant and quality factor is increased. In case of specimen sintered at 96$0^{\circ}C$ with 0.03 wt% CuO and CdO, the microwave dielectric properties obtained were dielectric constant of 41.2, quality factor (Q$\times$f) of 6, 500, temperature coefficient of resonant frequency of ppm/$^{\circ}C$.

• 한국결정성장학회지
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• 제8권4호
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• pp.634-639
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• 1998

$Y_2O_3$와 $Nb_2O_5$가 첨가된 지르코니아에 입자 크기가 다른 두종류의 Al2O3를 부피비로 10~30% 첨가한 복합체를 155$0^{\circ}C$ 온도에서 5시간 소결하여 $250^{\circ}C$ 온도의 공기 분위기하에서 1000시간 혹은 $180^{\circ}C$ 온도의 0.3MPa H2O vapor pressure 분위기하에서 5시간 열처리를 하여 X-ray 회절분석 방법을 이용하여 저온 상안정성을 조사하였다. 복합체 전부 열처리 후에 정방정 상에서 단사정 상으로 상전이가 발생하지 않는 우수한 저온 상안정성이 관찰되었다. 복합체의 상아정성에 Nb 첨가가 $Al_2O_3$의 첨가보다 더 효과적이었다. 2.8$\mu$m 입자크기를 가진 Al2O3를 부피비로 20% 첨가한 복합체에서 최적의 조건이 관찰되었으며 강도와 인성값은 각각 670MPa와 7.1MPam1/2이었다. Al2O3 입자 크기가 2.8$\mu$m에서 0.2$\mu$m로 감소함에 따라 강도는 다소 증가하였으나 파괴인성값은 감소하였다.

• 한국전자파학회논문지
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• 제14권6호
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• pp.558-566
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• 2003

Li$_2$CO$_3$가 첨가된 BiNbO$_4$ 세라믹스를 이용하여 후막 모노폴 안테나를 제작하였다. 그 결과 Li 이온이 Bi, Nb 이온과 결합하여 이온간의 거리를 증가시켰다. 이에 따라 이온 분극량이 증가하여 유전율은 증가하였지만 세라믹 내 격자구조의 왜곡이 심해져 유전손실이 증가하였다. 안테나 특성에 있어서는 유전율 보다는 품질계수(Q)의 영향을 직접적으로 받았다. 대역폭을 측정한 결과 Li$_2$CO$_3$ 첨가에 따른 급격한 품질계수의 저하와 함께 37 %에서 81.7 %까지 증가한 반면 안테나 이득은 -5.5 dBi 에서 -10.03 dBi까지 급격히 감소하였다. 이로 인해 방사패턴은 Li$_2$CO$_3$ 미(未)첨가 시 보다 낮은 dBi 값을 보여 주었다. 특히 무 지향성을 보여야될 x-y면 방사패턴의 경우 격자구조의 왜곡으로 인한 파장의 산란과 공기와 유전체의 경계면에서 높은 유전율 차이로 굴절이 일어나 심하게 왜곡되어 있었다. 그러나 낮은 품질계수(Q)로 인하여 모든 조성 범위에서 1 GHz 이상의 우수한 -10 dB 대역폭 특성을 보여주었다.