• Korean Journal of Poultry Science
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• v.46 no.3
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• pp.161-171
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• 2019

Four-week-old male Korean native chicks (KNC) were assigned to 3 groups with 6 replicates (8 birds/replicate) in each group: a basal diet (CON, 100 ppm of Zn), basal diet fortified with 50 ppm of Zn with zinc oxide (ZnO), or basal diet fortified with 50 ppm of Zn with Zn-methionine (ZnM). Immediately after a 4-week-feeding trial, 6 birds per group were used to evaluate the effects of zinc supplements on antioxidant indicators and the mRNA expression of zinc transport genes. The nitrogen components, lipid peroxidation, and total antioxidant status in blood were not influenced by Zn fortified diets. However, the ZnM group showed a significant (P<0.05) increase in uric acid levels than those in the ZnO group. In the small intestine, superoxide dismutase (SOD) and glutathione peroxidase (GPX) activities, and malondialdehyde (MDA) level were unaffected by zinc supplements. The activity of glutathione S-transferase (GST) was significantly (P<0.05) enhanced by Zn-methionine supplementation. In the liver, the activity of GST was significantly (P<0.05) increased by Zn-methionine supplement without affecting SOD, GPX, and MDA levels. With respect to the mRNA expression of zinc transport genes, the ZnM group displayed a strong tendency for increases in intestinal ZnT-1 (P=0.09) and ZnT-5 (P=0.06) levels, compared to those in the CON group. Moreover, the ZnM group showed a tendency (P=0.10) for up-regulation of hepatic metallothionein mRNA as compared with the CON group. In conclusion, the Zn-fortified diet with 50 ppm of Zn-methionine helped to improve GST activity and Zn transport gene expression in the small intestine or liver of KNC.

• Journal of Animal Environmental Science
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• v.18 no.3
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• pp.145-150
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• 2012

This study was conducted to measure methane ($CH_4$) and nitrous oxide ($N_2O$) emissions from the 6 month old litter stockpile used for korean native cattle (Hanwoo) from August 3, 2007 to October 4, 2007. Daily mean $CH_4$ emissions was peaked to 273.013 ${\mu}g\;m^{-2}\;s^{-1}$ (SE : ${\pm}1.047{\mu}g\;m^{-2}\;s^{-1}$) on first day and then gradually decreased to 2.309 ${\mu}g\;m^{-2}\;s^{-1}$ (SE : ${\pm}0.061{\mu}g\;m^{-2}\;s^{-1}$) at the end of this experiment. Daily mean $N_2O$ emissions was as little as 0.269 ${\mu}g\;m^{-2}\;s^{-1}$ (SE : ${\pm}0.018{\mu}g\;m^{-2}\;s^{-1}$) on first day, but exponentially increased up to 3.569 ${\mu}g\;m^{-2}\;s^{-1}$ (SE : ${\pm}0.454{\mu}g\;m^{-2}\;s^{-1}$) on 43rd day and then slowly decreased to 1.888 ${\mu}g\;m^{-2}\;s^{-1}$ (SE : ${\pm}0.012{\mu}g\;m^{-2}\;s^{-1}$) at the end of this experiment. Carbon dioxide equivalent ($CO_2$-eq), calculated by global warming potentials of $CH_4$ or $N_2O$, of $CH_4$ on first day occupied approximately 99% of sum of $CO_2$-eq of $CH_4$ and $N_2O$. Methane emissions decreased and $N_2O$ emissions increased so that $CO_2$-eq ratio of $CH_4$ to $N_2O$ was 50:50 on 34th day. The effect of $N_2O$ on the ratio was increase thereafter. The ratio of daily mean $CH_4$ and $N_2O$ emissions to daily error of the mean was calculated to find daily fluctuation of $CH_4$ and $N_2O$ emissions. The ratio of $CH_4$ was less than 1.0% till 11th day but increased to 10.9% on 57th day. The ratio of $N_2O$ (0.4%~51.0%) was higher than that of $CH_4$, showing high in early stage and then gradually decrease, which was different from the pattern of $CH_4$. The ratio of daily mean emissions to daily error of the mean was little in case of active $CH_4$ or $N_2O$ generation period, which would be caused by the temporal and spatial heterogeneity of composting process. Hence more air supply on early stage to decrease $CH_4$ generation and proper turning to reduce spatial heterogeneity are needed to mitigate greenhouse gas emissions.

• Korean Journal of Materials Research
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• v.4 no.1
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• pp.81-89
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• 1994

Ti film of lOnm thickness and Co film of 18nm thickness were sequentially e-heam evaporated onto Si (100) substrates. Metal deposited samples were rapidly thermal-annt.aled(KTA) in thr N1 en vironment a t $900^{\circ}C$ for 20 sec. to induce the reversal of metal bilayer, so that $CoSi_{2}$ thin films could be formed. The sheet resistance measured by the 4-point probe was 3.9 $\Omega /\square$This valur was maintained with increase in annealing time upto 150 seconds, showing high thermal stab~lity. Thc XRII spectra idrn tified the silicide film formed on the Si substrate as a $CoSi_{2}$ epitaxial layer. The SKM microgr;iphs showed smooth surface, and the cross-sectional TKM pictures revealed that the layer formed on the Si substrate were composed of two Co-Ti-Si alloy layers and 70nm thick $CoSi_{2}$ epl-layer. The AES analysis indicated that the native oxide on Si subs~rate was removed by TI ar the beginning of the RTA, and Ihcn that Co diffused to clean surface of Si substrate so that epitaxial $CoSi_{2}$ film could bt, formed. In thc rasp of KTA at $700^{\circ}C$. 20sec. followed by $900^{\circ}C$, 20sec., the thin film showed lower sheet resistance, but rough surface and interface owing to $CoSi_{2}$ crystal growth. The application scheme of this $CoSi_{2}$ epilayer to VLSI devices and the thermodynarnic/kinetic mechan~sms of the $CoSi_{2}$ epi-layer formation through the reversal of Co/Ti bdayer were discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.399-399
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• 2013

Metal silicides는 Si 기반의microelectronic devices의 interconnect와 contact 물질 등에 사용하기 위하여 그 형성 mechanism과 전기적 특성에 대한 연구가 많이 이루어지고 있다. 이 중 Rare-earth(RE) silicides는 저온에서 silicides를 형성하고, n-type Si과 낮은 Schottky Barrier contact (~0.3 eV)을 이룬다. 또한 낮은 resistivity와 Si과의 작은 lattice mismatch, 그리고 epitaxial growth의 가능성, 높은 thermal stability 등의 장점을 갖고 있다. RE silicides 중 ytterbium silicide는 가장 낮은 electric work function을 갖고 있어 n-channel schottky barrier MOSFETs의 source/drain으로 주목받고 있다. 또한 Silicon 기반의 CMOSFETs의 성능 향상 한계로 인하여 germanium 기반의 소자에 대한 연구가 이루어져 왔다. Ge 기반 FETs 제작을 위해서는 낮은 source/drain series/contact resistances의 contact을 형성해야 한다. 본 연구에서는 저접촉 저항 contact material로서 ytterbium germanide의 가능성에 대해 고찰하고자 하였다. HRTEM과 EDS를 이용하여 ytterbium germanide의 미세구조 분석과 면저항 및 Schottky Barrier Heights 등의 전기적 특성 분석을 진행하였다. Low doped n-type Ge (100) wafer를 1%의 hydrofluoric (HF) acid solution에 세정하여 native oxide layer를 제거하고, 고진공에서 RF sputtering 법을 이용하여 ytterbium 30 nm를 먼저 증착하고, 그 위에 ytterbium의 oxidation을 방지하기 위한 capping layer로 100 nm 두께의 TiN을 증착하였다. 증착 후, rapid thermal anneal (RTA)을 이용하여 N2 분위기에서 $300{\sim}700^{\circ}C$에서 각각 1분간 열처리하여 ytterbium germanides를 형성하였다. Ytterbium germanide의 미세구조 분석은 transmission electron microscopy (JEM-2100F)을 이용하였다. 면 저항 측정을 위해 sulfuric acid와 hydrogen peroxide solution (H2SO4:H2O2=6:1)에서 strip을 진행하여 TiN과 unreacted Yb을 제거하였고, 4-point probe를 통하여 측정하였다. Yb germanides의 면저항은 열처리 온도 증가에 따라 감소하다 증가하는 경향을 보이고, $400{\sim}500^{\circ}C$에서 가장 작은 면저항을 나타내었다. HRTEM 분석 결과, deposition 과정에서 Yb과 Si의 intermixing이 일어나 amorphous layer가 존재하였고, 열처리 온도가 증가하면서 diffusion이 더 활발히 일어나 amorphous layer의 두께가 증가하였다. $350^{\circ}C$ 열처리 샘플에서 germanide/Ge interface에서 epitaxial 구조의 crystalline Yb germanide가 형성되었고, EDS 측정 및 diffraction pattern을 통하여 안정상인 YbGe2-X phase임을 확인하였다. 이러한 epitaxial growth는 면저항의 감소를 가져왔으며, 열처리 온도가 증가하면서 epitaxial layer가 증가하다가 고온에서 polycrystalline 구조의 Yb germanide가 형성되어 면저항의 증가를 가져왔다. Schottky Barrier Heights 측정 결과 또한 면저항 경향과 동일하게 열처리 증가에 따라 감소하다가 고온에서 다시 증가하였다.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.6 no.1
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• pp.78-82
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• 2005

Display manufacturing process has adopted RCA cleaning, applying to larger area and coping with environmental issue for last ten years. However, the approaching concept of ozonized, hydrogenised, or electrolyzed water cleaning technologies is within RCA clean paradigm. In this work, only electrolyzed anode water was applied to clean particles and organics as well as metals based on Pourbaix concept, and as a test vehicle, MgO particles were introduced to prove the new concept. The electrolyzed anode water is very oxidative with high oxidation reduction potential (ORP) and low in pH of more than 900 mV and 3.1, respectively. MgO particles were immersed in the anode water and its weight losses due to dissolution were measured with time. Weight losses were in the ranges of 100 to 500 micrograms in 250 ml anode water depending on their ORP and pH. Therefore it was concluded that the cleaning radicals in the anode water was at least in the range of 1 to $5{\times}10^{20}$ ea per 250 ml anode water equivalent to $1{\times}10^{18} ea/cm^2$. Hence it can be assumed that the anode water applied to display cleaning from now on $1{\times}10^{10}$ to $1{\times}10^{15} ea/cm^2$ ranges of contaminants are being treated. In addition, it was observed that anode water did not develop micro-roughness on hydrophobic surface while it did on the native silicon oxide.

• Economic and Environmental Geology
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• v.29 no.4
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• pp.411-419
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• 1996

The Janggun magnetite deposits occur as the lens-shaped magnesian skarn, magnetite and base-metal sulfide orebodies developed in the Cambrian Janggun Limestone Formation. The K-Ar age of alteration sericite indicates that the mineralization took place during late Cretaceous age (107 to 70 Ma). The ore deposition is divided into two stages as a early skarn and late hydrothermal stage. Mineralogy of skara stage (107 Ma) consists of iron oxide, base-metal sulfides, Mg-Fe carbonates and some Mg- and Ca-skarn minerals, and those of the hydrothermal stage (70 Ma) is deposited base-metal sulfides, some Sb- and Sn-sulfosalts, and native bismuth. Based on mineral assemblages, chemical compositions and thermodynamic considerations, the formation temperature, $-logfs_2$, $-logfo_2$ and pH of ore fluids progressively decreased and/or increased with time from skarn stage (433 to $345^{\circ}C$, 8.8 to 9.9 atm, 29.4 to 31.6 atm, and 6.1 to 7.2) to hydrothermal stage (245 to $315^{\circ}C$, 11.2 to 12.3 atm, 33.6 to 35.4 atm, and 7.3 to 7.8). The ${\delta}^{34}S$ values of sulfides have a wide range between 3.2 to 11.6‰. The calculated ${\delta}^{34}S_{H_2S}$ values of ore fluids are relatively homo-geneous as 2.9 to 5.4‰ (skam stage) and 8.7 to 13.5‰ (hydrothermal stage), which are a deep-seated igneous source of sulfur indicates progressive increasing due to the mixing of oxidized sedimentary sulfur with increasing paragenetic time. The ${\delta}^{13}C$ values of carbonates in ores range from -4.6 to -2.5‰. Oxygen and hydrogen isotope data revealed that the ${\delta}^{38}O_{H_2O}$ and ${\delta}D$ values of ore fluids decreased gradually with time from 14.7 to 1.8‰ and -85 to -73‰ (skarn stage), and from 11.1 to -0.2‰ and -87 to -80‰ (hydrothermal stage), respectively. This indicates that magmatic water was dominant during the early skarn mineralization but was progressively replaced by meteoric water during the later hydrothermal replacement.

• The Korean Journal of Food And Nutrition
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• v.28 no.6
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• pp.1098-1106
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• 2015

This study aimed to investigate antioxidant activities from 11 forest plants, and determine their total phenolics, flavonoids and proantocyanidins contents. In addition, the antioxidant activities were correlated with antioxidant compounds. Among the samples, Cornus officinalis, Castanea crenata, Lindera erythrocarpa, Carpinus laxiflora and Pourthiaea villosa showed significantly higher 2,2-diphenyl-1-picrylhydrazyl (DPPH) ($IC_{50}=21.12{\sim}28.93{\mu}g/mL$) and 2,2'-azino-bis(3-ethylbenzothia zoline-6-sulfonic acid) (ABTS) ($IC_{50}=28.18{\sim}52.55{\mu}g/mL$) radical scavenging ability with reducing power ($IC_{50}=59.91{\sim}93.64{\mu}g/mL$) than other plants; and C. crenata, L. erythrocarpa and Rubus coreanus showed strong nitric oxide (NO) inhibition activity (${\geq}60%$). In addition, L. erythrocarpa, C. laxiflora and P. villosa showed higher oxygen radical absorbance capacity (ORAC) values (${\geq}1,100{\mu}M$ TE/g sample) than other samples. High total phenolic contents were observed in C. crenata (429.11 mg GAE/g), L. erythrocarpa (437.11 mg GAE/g), C. laxiflora (408.67 mg GAE/g) and P. villosa (404.11 mg GAE/g). The DPPH and ABTS radical scavenging activity with reducing power were significantly correlated with total phenolic contents ($R^2=0.71{\sim}0.79$), but total phenolic contents were not correlated with NO inhibition and ORAC ($R^2=0.35{\sim}0.43$). Therefore, these results suggested that C. officinalis, C. crenata, L. erythrocarpa, C. laxiflora and P. villosa are potential natural antioxidative candidate ingredients.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.169-169
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• 2008

To keep pace with scaling trends of CMOS technologies, high-k metal oxides are to be introduced. Due to their high permittivity, high-k materials can achieve the required capacitance with stacks of higher physical thickness to reduce the leakage current through the scaled gate oxide, which make it become much more promising materials to instead of $SiO_2$. As further studying on high-k, an understanding of the relation between the etch characteristics of high-k dielectric materials and plasma properties is required for the low damaged removal process to match standard processing procedure. There are some reports on the dry etching of different high-k materials in ICP and ECR plasma with various plasma parameters, such as different gas combinations ($Cl_2$, $Cl_2/BCl_3$, $Cl_2$/Ar, $SF_6$/Ar, and $CH_4/H_2$/Ar etc). Understanding of the complex behavior of particles at surfaces requires detailed knowledge of both macroscopic and microscopic processes that take place; also certain processes depend critically on temperature and gas pressure. The choice of $BCl_3$ as the chemically active gas results from the fact that it is widely used for the etching o the materials covered by the native oxides due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. In this study, the surface reactions and the etch rate of $Al_2O_3$ films in $BCl_3/Cl_2$/Ar plasma were investigated in an inductively coupled plasma(ICP) reactor in terms of the gas mixing ratio, RF power, DC bias and chamber pressure. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by AFM and SEM. The chemical states of film was investigated using X-ray photoelectron spectroscopy (XPS), which confirmed the existence of nonvolatile etch byproducts.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.3
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• pp.31-37
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• 2009

Cu-Cu thermo-compression bonding process was successfully developed as functions of the $N_2+H_2$ forming gas annealing conditions before and after bonding step in order to find the low temperature bonding conditions of 3-D integrated technology where the quantitative interfacial adhesion energy was measured by 4-point bending test. While the pre-annealing with $N_2+H_2$ gas below $200^{\circ}C$ is not effective to improve the interfacial adhesion energy at bonding temperature of $300^{\circ}C$, the interfacial adhesion energy increased over 3 times due to post-annealing over $250^{\circ}C$ after bonding at $300^{\circ}C$, which is ascribed to the effective removal of native surface oxide after post-annealing treatment.

• Korean Journal of Materials Research
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• v.6 no.8
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• pp.779-785
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• 1996

Thin $700^{\circ}C$films were formed through layer inversion of Co/Nb bilayer during rapid thermal annealing(RTA). The Nb interlayer seems to effectively prevent over-consumption of Si and to control the silicidation reaction by forming Co-Nb intermetallic compounds and removing the native oxide formed on Si substrate which interferes the uniform Co-Si interaction. The final layer structure of the Co/Nb bilayer after $700^{\circ}C$ RTA was found to be ${Nb}_{2}{O}_{3}$/${Co}_{2}$Si.CoSi/${NbCo}_{x}$/Nb(O, C)/${CoSi}_{2}$/ Si. The layer inversion and the formation of a stable CoSi, phase occurred above $700^{\circ}C$, and the Nb silicides were not found at any annealing temperature. These may be due to the formation of very stable Co-Nb intermetallic compounds and Nb oxides which limit the moving of Co and Si.