• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.260-263
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• 2003

Lasers are used as the source of the interferometers in the industrial field. These lasers need 2 requirements. The first is the narrow linewidth of laser for the long coherence length. The second is the stabilized frequency of laser for the precision measurement. Now HeNe lasers are mostly used and the frequency stability is about 10$^{-9}$ . In this paper, we construct the HeNe laser systems of frequency stabilization using typical 2 method, the beat frequency stabilization method and the intensity difference method. So, we get the frequency stabilities of 2.01$\times$10$^{-9}$ (0.1s), 3.4$\times$10$^{-9}$ (0.1s).

• Korean Journal of Materials Research
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• v.17 no.7
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• pp.390-395
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• 2007

We systematically investigated the effects of InAs coverage variation, two-step annealing and an asymmetric InGaAs quantum well (QW) on the structural and optical characteristics of InAs quantum dots (QDs) by using atomic force microscopy (AFM), transmission electron microscopy (TEM) and photoluminescence (PL) measurement. The transition of size distribution of InAs QDs from bimodal to multi-modal was noticeably observed with increasing InAs coverage. By means of two-step annealing, it is found that significant narrowing of the luminescence linewidth (from 132 to 31 meV) from the InAs QDs occurs together with about 150 meV blueshift, compared to as-grown InAs QDs. Finally, the InAs QDs emitting at longer wavelength of $1.3\;{\mu}m$ with narrow linewidth were grown by an asymmetric InGaAs QW. The excited-state transition for the InAs QDs with an asymmetric InGaAs QW was not noticeably observed due to the large energy-level spacing between the ground states and the first excited states. The InAs QDs with an asymmetric InGaAs QW will be promising for the device applications such as $1.3\;{\mu}m$ optical-fiber communication.

• Journal of The Korean Astronomical Society
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• v.35 no.2
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• pp.97-103
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• 2002

We have mapped 1 $deg^2$ region toward a high latitude cloud MBM 40 in the J = 1 - 0 transition of $^{12}CO$ and $^{13}CO$, using the 3 mm SIS receiver on the 14 m telescope at Taeduk Radio Astronomy Observatory. We used a high resolution autocorrelator to resolve extremely narrow CO linewidths of the molecular gas. Though the linewidth of the molecular gas is very narrow (FWHP < 1 km $s^{-1}$ ), it is found that there is an evident velocity difference between the middle upper part and the lower part of the cloud. Their spectra for both of $^{12}CO$ and $^{13}CO$ show blue wings, and the position-velocity map shows clear velocity difference of 0.4 km $s^{-1}$ between two parts. The mean velocity of the cloud is 3.1 km $s^{-1}$. It is also found that the linewidths at the blueshifted region are broader than those of the rest of the cloud. We confirmed that the visual extinction is less than 3 magnitude, and the molecular gas is translucent. We discussed three mass estimates, and took a mass of 17 solar masses from CO integrated intensity using a conversion factor $2.3 {\times} 10^{20} cm^{-2} (K\;km s^{-1})^{-1}$. Spatial coincidence and close morphological similarity is found between the CO emission and dust far-infrared (FIR) emission. The ratio between the 100 f.Lm intensity and CO integrated intensity of MBM 40 is 0.7 (MJy/sr)/(K km $s^{-1}$), which is larger than those of dark clouds, but much smaller than those of GMCs. The low ratio found for MBM 40 probably results from the absence of internal heating sources, or significant nearby external heating sources.

• Korean Journal of Optics and Photonics
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• v.11 no.6
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• pp.429-433
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• 2000

A study of the tunable fiber DFB laser using PZT-stretcher is presented. The device has an laser ocsillator by using a fiber Bragg grating at 1559.4 nm written directly into a 3-cm long $Er^{3+}$ doped fiber. Post UV-exposure method to provide the necessary phase shift is used for a single mode operation. The device shows the single mode operation of $230\muW$ output power and has a narrow linewidth of 35 kHz. The lasing wavelength of the laser can be tuned in a range of 3 nm by stretching the grating.rating.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.5
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• pp.9-14
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• 2004

Lightwave communication system for Wavelength division multiplexing(WDM) consists of multiplexer, demultiplexer and optical Inter. But, the existing multiplexer, demultiplexer and optical filter is difficult to minimize system and reduce weight because they are not integrated device type. In this paper, thus, we propose the OADM baed on a Mach-Zehnder interferometer(MZI) with FBG(fiber Bragg Slating) in the interferometer Ems. The OADM using FBG. and MZI is able to minimize system and reduce weight. We analyze output characteristics of OADM and present the optimum design data through the computer simulation and experimentation. Also unposed OADM fits for DWDM(Dense WDM) system because of wide bandwidth by tuning narrow linewidth.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.65-68
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• 2002

The effect of low-temperature ZnO buffer layer has been investigated for the optical properties of ZnO thin films. ZnO buffers and thin films have been deposited using the pulsed laser deposition technique. ZnO buffer layers were grown at $200^{\circ}C$ with various thickness of 0 to 60 nm, followed by raising the substrate temperature to $400^{\circ}C$ to grow $2{\mu}m$ ZnO thin films. The buffer layers could relax stresses induced by the lattice mismatch and different thermal expansion coefficients between ZnO thin films and sapphire substrate. In order to identify the optical properties of ZnO thin films, PL measurement was used. From the results of PL measurement, all the fabricated ZnO thin films with buffer layers have shown intensive UV emission with a narrow linewidth. ZnO thin films with buffer layer of 20 nm have shown the strongest UV emission. It was found that the use of ZnO buffer layer plays an important role to improve the intensive UV emission of the ZnO thin films.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.98-99
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• 2012

Deposition of thin films using magnetron sputtering plasmas is a well-developed, classical technology. However, detailed investigations using advanced diagnostics are insufficient in magnetron sputtering, in comparison with plasma-aided dry etching and plasma-enhanced chemical vapor deposition. In this talk, we will show examples of diagnostic works on magnetron sputtering employing metal targets. Diagnostic methods which have fine spatial resolutions are suitable for magnetron sputtering plasmas since they have significant spatial distributions. We are using two-dimensional laser-induced fluorescence spectroscopy, in which the plasma space is illuminated by a tunable laser beam with a planer shape. A charge-coupled device camera with a gated image intensifier is used for taking the picture of the image of laser-induced fluorescence formed on the planer laser beam. The picture of laser-induced fluorescence directly represents the two-dimensional distribution of the atom density probed by the tunable laser beam, when an intense laser with a relatively wide line-width is used. When a weak laser beam with a relatively narrow linewidth is used, the laser-induced fluorescence represents the density distribution of atoms which feel the laser wavelength to be resonant via the Doppler shift corresponding to their velocities. In this case, we can obtain the velocity distribution function of atoms by scanning the wavelength of the laser beam around the line center.

• Korean Journal of Optics and Photonics
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• v.18 no.1
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• pp.44-49
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• 2007

We have transferred a narrow-linewidth $1.5{\mu}m$ laser beam through a 525 m fiber network with excellent transfer stability. The fiber-induced optical phase noise during the fiber transmission is cancelled by configuring a noise-canceling servo. The transfer instability was $2{\times}10^{-17}$ at 1 s of averaging time. We quantitatively analyzed the transferred optical frequency in the frequency domain and in the time domain.

• Korean Journal of Materials Research
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• v.32 no.11
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• pp.449-457
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• 2022

Halide perovskites are emerging materials for next-generation display applications, thanks to their narrow emission linewidth and band gap tunability, capable of covering the entire range of visible light. Despite their short period of research, perovskite light emitting diodes (PeLEDs) have shown rapid progress in device external quantum efficiency (EQE) in the near-infrared (NIR), red, and green emission wavelengths, and the record EQE has exceeded over 20 %. However there has been limited progress with blue emission compared to the red and green counterparts. In this review, the current status and challenges of blue PeLEDs are introduced, and strategies to produce spectrally stable blue PeLEDs are discussed. The strategies include 1) a mixed halide system in the form of 3-dimensional (3D) perovskites, 2) colloidal perovskite nanocrystals and 3) low dimensional perovskites, known as quasi-2D perovskites. In the mixed halide system, previous reports based on the compositional engineering of 3D perovskites to reduce spectral instability (i.e., halide segregation) will be discussed. Since spectral instability issue originate from the mixed halide composition in perovskites, the two other strategies are based on enlarging the band gap with a single halide composition. Finally, the prospects for each strategy are discussed, for further improvement in spectrally stable blue PeLEDs.

• Journal of Korean Vacuum Science & Technology
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• v.4 no.1
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• pp.23-26
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• 2000

We have fabricated by metal organic chemical vapor deposition (MOCVD) In$\_$0.13/Ga$\_$0.87/N/GaN multiple quantum well (MQW) with thickness as thin as 10 A and barriers also of th same width on (0001) sapphire substrate. We have investigated this thin MQW by steady-state and time-resolved photoluminescence(PL) in picosecond time scale in a wide temperature range from 10 to 290 K. In the PL at 10 K, we observed a broad peak at 3.134 eV which was attributed to the quantum well emission of InGaN. The full width at half maximum (FWHM) of this peak was 129 meV at 10 K and its broadening at low temperatures was considered to be due to compositional fluctuations and interfacial disorder in the alloy. The narrow width of the quantum well was mainly responsible for the broadening of the emission linewidth. We also observed an intense and sharp peak at 3.471 eV of GaN barrier. From the temperature dependent PL measurements, the activation energy of the InGaN quantum well emision peak was estimated to be 69 meV. The lifetime of the quantum well emission was found to be 720 ps at 10 K, which was explained in terms of the exciton localization arising from potential fluctuations.