• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.390.2-390.2
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• 2016

Single crystalline indium-tin-oxide (ITO) nanowires (NWs) were grown by sputtering method. A thin Ni film of 5 nm was coated before ITO sputtering. Thermal treatment forms Ni nanoparticles, which act as templates to diffuse Ni into the sputtered ITO layer to grow single crystalline ITO NWs. Highly optical transparent photoelectric devices were realized by using a transparent metal-oxide semiconductor heterojunction by combining of p-type NiO and n-type ZnO. A functional template of ITO nanowires was applied to this transparent heterojunction device to enlarge the light-reactive surface. The ITO NWs/n-ZnO/p-NiO heterojunction device provided a significant high rectification ratio of 275 with a considerably low reverse saturation current of 0.2 nA. The optical transparency was about 80% for visible wavelengths, however showed an excellent blocking UV light. The nanostructured transparent heterojunction devices were applied for UV photodetectors to show ultra fast photoresponses with a rise time of 8.3 mS and a fall time of 20 ms, respectively. We suggest this transparent and super-performing UV responser can practically applied in transparent electronics and smart window applications.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.7.1-7.1
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• 2011

Nanoporous templates have been widely used for the development of new functional nanostructured materials suitable for electronics, optics, magnetism, and energy storage materials. We have prepared nanoporous templates by using thin films of mixtures of polystyrene-block-poly (methyl methacrylate) (PS-b-PMMA) and PMMA homopolymers. These templates have cylindrical nanoholes spanning the entire thickness of the film. Some applications of nanoporous templates are introduced: a) anti-reflective coating, b) the preparation of conducting polymer nanowires of poly (pyrrole), poly (3,4-ethylenedioxy-thiopene) onto a glass coated with indium-tin-oxide, and c) the separation membranes for biomaterials. We found that when the pore fraction of nanoholes in the film was ~0.68, almost zero reflectance at a specific wavelength, which can be changed with film thickness, was achieved at visible wavelengths Furthermore, ultra high density array of conducting nanowires was successfully prepared onto various substrates including flexible polymer. Due to highly alignment of polymer chain along the nanowire direction, the conductivity was much increased. Furthermore, these nanoporous films were found to be very effective for the separation of human Rhinovirus type 14 (HRV 14), major pathogen of a common cold in humans, from the buffer solution. We also found that when the pore size was effectively controlled down to 6 nm, a single file diffusion was observed.

• ETRI Journal
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• v.28 no.6
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• pp.787-789
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• 2006

In this letter, we report that vertically well-aligned ZnO nanowires were grown on GaN epilayers and c-plane sapphire via a vapor-liquid-solid process by introducing a 3 nm Au thin film as a catalyst. In our experiments, epitaxially grown ZnO nanowires on Au-coated GaN were vertically well-aligned, while nanowires normally tilted from the surface when grown on Au-coated c-$Al_2O_3$ substrates. However, pre-growth annealing of the Au thin layer on c-$Al_2O_3$ resulted in the growth of well-aligned nanowires in a normal surface direction. High-resolution transmission electron microscopy measurements showed that the grown nanowires have a hexagonal c-axis orientation with a single-crystalline structure.

• Journal of the Korean Institute of Intelligent Systems
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• v.26 no.5
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• pp.368-374
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• 2016

This paper presents an experimental study on an electrical circuit model of the TiO2-based nano-wired memristor device for neuromophic applications. The electrical circuit equivalent model of the proposed memristor device consists of several electronics components and some passive devices including operational amplifiers, multipliers, resistors and capacitors. In order to verify the proposed design, both of simulation (using PSPICE) as well as hardware implementation were performed for the analysis of the memristor circuit with time waveforms, frequency spectra, I-V curves and power curves. The gained results from the measured data showed a good agreement with the simulation result that confirm the proposed idea.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.198-198
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• 2012

Graphene has been the subject of intense study in recent years owing to its good optoelectronic properties, possibility for stretchable electronics, and so on. Especially, many research groups have studied about graphene nanostructures with various sizes and shapes. Graphene needs to be fabricated into useful devices with controllable electrical properties for its successful device applications. However, this been far from satisfaction owing to a lack of reliable pattern transfer techniques. Photolithography, nanowire etching, and electron beam lithography methods are commonly used for construction of graphene patterns, but those techniques have limitations for getting controllable GNRs. We have developed a novel nanoscale pattern transfer technique based on an electro-hydrodynamic lithography providing highly scalable versatile pattern transfer technique viable for industrial applications. This technique was exploited to fabricate nanoscale patterned graphene structures in a predetermined shape on a substrate. FE-SEM, AFM, and Raman microscopy were used to characterize the patterned graphene structures. This technique may present a very reliable high resolution pattern transfer technique suitable for graphene device applications and can be extended to other inorganic materials.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.183.1-183.1
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• 2016

Due to the latest research trend toward wearable energy devices, transparent and stretchable supercapacitors which can sustain their performance even under physical deformation have steadily attracted huge attention. Despite the Ag NW is the most promising candidate for fabrication of transparent and stretchable electronics, the electrochemical instability interrupts its application to development of the energy device. Here, we introduce a transparent and highly stretchable supercapacitor made by Au-Ag core shell NW network percolation electrode. The Au-Ag core shell NW synthesized by a simple solution process not only shows excellent electrical conductivity but also greatly enhanced chemical and electrochemical stability compare to pristine Ag NW. These outstanding properties of the Au-Ag core shell NW are attributed both to the core Ag NW and the Au protecting sheath layer. The proposed Au-Ag core shell NW based supercapacitor exhibits optical transmittance with outstanding mechanical stability withstanding 60% strain without any decrease of the performance. The supercapacitors connected in series are charged and discharged stable in 30% strain turning on a red LED. These notable results demonstrate the potential of the Au-Ag core shell NW as a strong candidate for development of wearable energy devices.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.9
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• pp.2133-2138
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• 2013

In this paper, the variation of a steep subthreshold slope at elevated temperature in nanowire n-channel junctionless and inversion mode MuGFETs has been compared. It has been observed that the subthreshold slopes are increased with the increase of the operation temperature in junctionless and inversio-mode transistors. The variation of a subthreshold slope with operation temperature is more significant in junctionless transistor than inversion-mode transistor. The temperature dependence on the variation of a subthreshold slope for different fin widths shows a similar behavior regardless of fin width. From the temperature dependence on the variation of a subthreshold slope for different substrate biases, it has been observed that the variation of a subthreshold slope is less significant when the substrate bias was applied. It is worth noting that one can achieve a subthreshold slope of below 41mV/dec at elevated temperature of 400K using the junctionless MuGFETs with a positive substrate bias.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.3
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• pp.73-76
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• 2020

Silver nanowires (AgNWs) intrinsically possess high conductivity, ductility, and network structure percolated in a low density, which have led to many advanced applications of transparent and flexible electronics. Most of these applications require patterning of AgNWs, for which photolithographic and printing-based techniques have been widely used. However, several drawbacks such as high cost and complexity of the process disturb its practical application with patterning AgNWs. Herein, we propose a novel method for the patterning of AgNWs by employing UV-curable adhesive tape with a structure of liner/adhesive layer/polyolefin (PO) film and UV irradiation to simplify the process. First, the UV-curable adhesive tape was attached to AgNWs/polyurethane (PU), and then selectively exposed to UV irradiation by using a photomask. Subsequently, the UV-curable adhesive tape was peeled off and consequently AgNWs were patterned on PU substrate. This facile method is expected to be applicable to the fabrication of a variety of low-cost, shape-deformable transparent and wearable devices.

• Korean Journal of Materials Research
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• v.21 no.12
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• pp.660-665
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• 2011

1-D ZnO nanowires have been attractive for their peculiar properties and easy growth at relatively low temperature. The length, diameter, and density of ZnO nanowires were determined by the several synthetic parameters, such as PEI concentration, growth time, temperature, and zinc salt concentration. The ZnO nanowires were grown on the <001> oriented seed layer using the hydrothermal process with zinc nitrate and HMTA (hexamethylenetetramine) and their structure and optical properties were characterized. The morphology, length and diameter of the nanowires were strongly affected by the relative and/or absolute concentration of $Zn^{2+}$ and $OH^{-1}$ and the hydrothermal temperature. When the concentrations of the zinc nitrate HMTA were the same as 0.015 M, the length and diameter of the nanowires were $1.97{\mu}m$ and $0.07{\mu}m$, respectively, and the aspect ratio was 28.1 with the preferred orientation along the <001> direction. XRD and TEM results showed a high crystallinity of the ZnO nanowires. Optical measurement revealed that ZnO nanowires emitted intensive stimulated UV at 376 nm without showing visible emission related to oxygen defects.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.3
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• pp.21-29
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• 2016

In this paper, we developed a flexible transparent capacitive pressure sensor which can recognize X and Y coordinates and the size of force simultaneously by sensing a change in electrical capacitance. The flexible transparent capacitive pressure sensor was composed of 3 layers which were top electrode, pressure sensing layer, and bottom electrode. Silver nanowire(Ag NW)/poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) hybrid film was used for top and bottom flexible transparent electrode. The fabricated capacitive pressure sensor had a total size of 5 inch, and was composed of 11 driving line and 19 sensing line channels. The electrical, optical properties of the Ag NW/PEDOT:PSS and capacitive pressure sensor were investigated respectively. The mechanical flexibility was also investigated by bending tests. Ag NW/PEDOT:PSS exhibited the sheet resistance of $44.1{\Omega}/square$, transmittance of 91.1%, and haze of 1.35%. Notably, the Ag NW/PEDOT:PSS hybrid electrode had a constant resistance change within a bending radius of 3 mm. The bending fatigue tests showed that the Ag NW/PEDOT:PSS could withstand 200,000 bending cycles which indicated the superior flexibility and durability of the hybrid electrode. The flexible transparent capacitive pressure sensor showed the transmittance of 84.1%, and haze of 3.56%. When the capacitive pressure sensor was pressed with the multiple 2 mm-diameter tips, it can well detect the force depending on the applied pressure. This indicated that the capacitive pressure sensor is a promising scheme for next generation flexible transparent touch screens which can provide multi-tasking capabilities through simultaneous multi-touch and multi-force sensing.