• ETRI Journal
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• v.38 no.3
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• pp.469-478
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• 2016

In this paper, we investigate the effects of pre-reducing Sb-doped $SnO_2$ (ATO) electrodes in viologen-anchored $TiO_2$ (VTO) nanostructure-based electrochromic devices. We find that by pre-reducing an ATO electrode, the operating voltage of a VTO nanostructure-based electrochromic device can be lowered; consequently, such a device can be operated more stably with less hysteresis. Further, we find that a pre-reduction of the ATO electrode does not affect the coloration efficiency of such a device. The aforementioned effects of a pre-reduction are attributed to the fact that a pre-reduced ATO electrode is more compatible with a VTO nanostructure-based electrochromic device than a non-pre-reduced ATO electrode, because of the initial oxidized state of the other electrode of the device, that is, a VTO nanostructure-based electrode. The oxidation state of a pre-reduced ATO electrode plays a very important role in the operation of a VTO nanostructure-based electrochromic device because it strongly influences charge movement during electrochromic switching.

• Transactions on Electrical and Electronic Materials
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• v.7 no.2
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• pp.58-61
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• 2006

Carefully designed ZnO nanowire-film hybrid nanostructure, composed of a bottom ZnO film, ZnO nanowire arrays, and a top ZnO film, was consecutively fabricated by adjusting the supersaturation conditions using a metal-organic chemical vapor deposition (MOCVD) to utilize the vertically aligned ZnO nanowires as the oxygen sensors. The decrease of current flow through ZnO nanowire arrays increasing oxygen pressure showed the high potential for the application of the ZnO hybrid nanostructure to the oxygen sensors. In addition, it was confirmed that the oxygen sensing characteristics of this hybrid nanostructure were attributed to the defects near the surface of the nanowires.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1493-1494
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• 2011

CdS nanostructure materials have been fabricated in porous anodic aluminum oxide (AAO) template by using chemical bath deposition (CBD). These nanostructure materials had uniform diameters of about 15e200 nm, which correspond to the pore sizes of the templates used, and the length was up to 40 mm. X-ray diffraction (XRD) investigation demonstrates that CdS nanostructure materials were hexagonal polycrystalline in nature. As the pore diameter of AAO templates was enlarged, the preferential orientation of c-axis was improved. From PL analysis, the sulfur-deficient defects at the surfaces of CdS nanostructure materials were increasedwhen the samplewas synthesized in the template with larger pore diameter.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.31.1-31.1
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• 2010

Various ZnO nanostructures were synthesized and ZnO nanostructure-based self-assembled transistors were fabricated. Compared to spindle and flower like nanostructure, the ZnO nanorod (NR) structure showed much stronger gate controllability, and greatly enhanced device performance, demonstrating that this structural variation leads to significant differences of the nanostructure network-based device performance. Also, patterned dry transfer-printing technique that can generate monolayer-like percolating networks of ZnO NRs has been developed. The method exploits the contact area difference between NR-NR and NR-substrate, rather than elaborate tailoring of surface chemistry or energetic. The devices prepared by the transferring method exhibited on/off current ratio, and mobility of ${\sim}2.7{\times}10^4$ and ${\sim}1.03\;cm^2/V{\cdot}s$, respectively. Also, they exhibited showing lower off-current and stronger gate controllability due to defined-channel between electrodes and monolayer-like network channel configuration. With multilayer stacks of nanostructures on stamp, the monolayer-like printing can be repeated many times, possibly on large area substrate, due to self-regulating printing characteristics. The method may enable high-performance macroelectronics with materials that have high aspect ratio.

• Journal of the Korean institute of surface engineering
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• v.53 no.3
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• pp.116-123
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• 2020

Ion beam irradiation induces self-organization of nanostructure on the surface of polymer film. We show that the incident angle of Ar ions on polyethylene naphthalate(PEN) film changes self-organized nanostructure. PEN film was irradiated by argon ion beams with the ion incident angle of 0°, 30°, 45°, 60°, and 80°. Nanostructure was altered from dimple to ripple structure as the angle increases. The ripple structure changed to pillar structure after 60°due to that the shallow incident angle increased the ion energy transfer per depth up to 50 eV/Å, which value could induce excessive surface heating and oligomer formation reacting as a physical mask for anisotropic etching. And quantitative analysis of the nanostructures was adapted by using ABC model and fractal dimension theory.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.24.2-24.2
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• 2009

Nanostuctures such as nanodot and nanowire have been extensively studied as building blocks for nanoscale devices. However, the direct growth of the nanostuctures at the desired position is one of the most important requirements for realization of the practical devices with high integrity. Self-assembled nanotemplate is one of viable methods to produce highly-ordered nanostructures because it exhibits the highly ordered nanometer-sized pattern without resorting to lithography techniques. And selective epitaxial growth (SEG) can be a proper method for nanostructure fabrication because selective growth on the patterned openings obtained from nanotemplate can be a proper direction to achieve high level of control and reproducibility of nanostructucture fabrication. Especially, SiGe has led to the development of semiconductor devices in which the band structure is varied by the composition and strain distribution, and nanostructures of SiGe has represented new class of devices such nanowire metal-oxide-semiconductor field-effect transistors and photovoltaics. So, in this study, various shaped SiGe nanostructures were selectively grown on Si substrate through ultrahigh vacuum chemical vapor deposition (UHV-CVD) of SiGe on the hexagonally arranged Si openings obtained using nanotemplates. We adopted two types of nanotemplates in this study; anodic aluminum oxide (AAO) and diblock copolymer of PS-b-PMMA. Well ordered and various shaped nanostructure of SiGe, nanodots and nanowire, were fabricated on Si openings by combining SEG of SiGe to self-assembled nanotemplates. Nanostructure fabrication method adopted in this study will open up the easy way to produce the integrated nanoelectronic device arrays using the well ordered nano-building blocks obtained from the combination of SEG and self-assembled nanotemplates.

• Korean Journal of Materials Research
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• v.30 no.3
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• pp.105-110
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• 2020

Cu/PET composite films are widely used in a variety of wearable electronics. Lifetime of the electronics is determined by adhesion between the Cu film and the PET substrate. The formation of an anisotropic nanostructure on the PET surface by surface modification can enhance Cu/PET interfacial adhesion. The shape and size of the anisotropic nanostructures of the PET surface can be controlled by varying the surface modification conditions. In this work, the effect of Cu/PET interface nanostructures on the failure mechanism of a Cu/PET flexible composite film is studied. From observation of the morphologies of the anisotropic nanostructures on plasma-treated PET surfaces, and cross-sections and surfaces of the fractured specimens, the Cu/PET interface area and nanostructure width are analyzed and the failure mechanism of the Cu/PET film is investigated. It is found that the failure mechanism of the Cu/PET flexible composite film depends on the shape and size of the plasmatreated PET surface nanostructures. Cu/PET interface nanostructures with maximal peel strength exhibit multiple craze-crack propagation behavior, while smaller or larger interface nanostructures exhibit single-path craze-crack propagation behavior.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.25.2-25.2
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• 2011

The tungsten oxide wire-like nanostructure is fabricated by deposition and thermal oxidation of tungsten metal on porous single wall carbon nanotubes (SWNTs). The morphology and crystalline quality of materials are investigated by SEM, TEM, XRD and Raman analysis. The results prove that $WO_3$ wire-like nanostructure fabricated on SWNTs show highly porous structures. Exposure of the sensors to NH3 gas in the temperature range of 150~300$^{\circ}C$ resulted in the highest sensitivity at $250^{\circ}C$ with quite rapid response and recovery time. Response time as a function of test concentrations and NH3 gas sensing mechanism is reported and discussed.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.323-324
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• 2006

The nanostructure control of $Si_3N_4$ ceramics can be achieved by using fine starting powder and retardation of grain growth. The spark plasma sintering technique is useful to retard the grain growth by rapid heating. In the present work, the change of microstructure was investigated with emphasis on the particle size of starting powder, the amount of sintering additive and the heating schedule. The rapid heating by spark plasma sintering gave the fine microstructure consisting of equiaxed grains with the same size as starting particles. The spark plasma sintering of $Si_3N_4$ fine powder was effective to control the microstrucutre on nano-meter level.

• Korean Journal of Materials Research
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• v.25 no.11
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• pp.622-629
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• 2015

Cu circuits were successfully fabricated on flexible PET(polyethylene terephthalate) substrates using wettability difference and electroless plating without an etching process. The wettability of Cu plating solution on PET was controlled by oxygen plasma treatment and $SiO_x$-DLC(silicon oxide containing diamond like carbon) coating by HMDSO(hexamethyldisiloxane) plasma. With an increase of the height of the nanostructures on the PET surface with the oxygen plasma treatment time, the wettability difference between the hydrophilicity and hydrophobicity increased, which allowed the etchless formation of a Cu pattern with high peel strength by selective Cu plating. When the height of the nanostructure was more than 1400 nm (60 min oxygen plasma treatment), the reduction of the critical impalement pressure with the decreasing density of the nanostructure caused the precipitation of copper in the hydrophobic region.