• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.3
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• pp.222-227
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• 2010

ZnO nanorods array have been grown on the seed crystal coated Si(100) substrate by hydrothermal method. The growth, structural and optical properties of ZnO nanorods array were investigated with a variation of precursor concentration from 0.01 M to 0.04 M. The array density of grown ZnO nanorods per same area was increased with increasing the concentration of precursor solution. Vertically aligned ZnO nanorods with hexagonal wurtzite structure have highly preferred c-axis orientation along (002) lattice plane. Especially, ZnO nanorods array developed from 0.04 M precursor solution showed a diameter of about 85 nm and length of 1.2 {\mu}m$ without any crystallographic defects. The photoluminescence spectra of ZnO nanorods from heavier precursor concentration exhibited stronger UV emission around 380 nm corresponding with near-band-edge emission.

• Journal of the Korean Chemical Society
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• v.55 no.4
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• pp.563-565
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• 2011

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.377-377
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• 2012

반도체 물질로서 Zinc oxide (ZnO) nanorod (NR)는 Hydrothermal growth method로 제작 시 고가의 장비가 필요치 않기에 저비용 대면적 박막을 제작하는데 적합하지만 NR들의 array 조절과 각각의 rod와 전극 간의 연결에서 어려움을 가지고 있다. 최근 연구에서는 이러한 NR array 형상 조절과 소자의 성능 향상을 위하여 tilted sputtering method를 이용해 seed layer를 lateral 하게 형성하여 성장시켜 표면적을 극대화함으로서 응용되는 센서의 성능을 향상시키는 연구가 진행되고 있다. 본 연구에서는 이렇게 향상된 수평구조의 ZnO NR과 다양한 전극 금속 간의 schottky barrier의 높이 차이에 따라 sensitivity와 response time의 차이를 측정하였다. NR들을 전계방출형 전자현미경과 XRD로 분석 NR의 lateral structure 및 결정성을 확인하였다. 그리고 이렇게 형성한 NR을 소자화하여 Au, Ag, Al을 전극 금속물질로 사용한 경우에 대하여 sensing performance와 전극 금속의 schottky barrier의 상관관계를 확인하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.429-429
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• 2016

Organolead halide perovskite have attracted much attention over the past three years as the third generation photovoltaic due to simple fabrication process via solution process and their great photovoltaic properties. Many structures such as mesoporous scaffold, planar heterojunction or 1-D TiO2 or ZnO nanorod array structures have been studied to enhance performances. And the photovoltaic performances and carrier transport properties were studied depending on the cell structures and shape of perovskite film. For example, the perovskite cell based on TiO2/ZnO nanorod electron transport materials showed higher electron mobility than the mesoporous structured semiconductor layer due to 1-D direct pathway for electron transport. However, the reason for enhanced performance was not fully understood whether either the shape of perovskite or the structure of TiO2/ZnO nanorod scaffold play a dominant role. In this regard, for a clear understanding of the shape/structure of perovskite layer, we applied anodized aluminum oxide material which is good candidate as the inactive scaffold that does not influence the charge transport. We fabricated vertical one dimensional (1-D) nanostructured methylammonium lead mixed halide perovskite (CH3NH3PbI3-xClx) solar cell by infiltrating perovskite in the pore of anodized aluminum oxide (AAO). AAO template, one of the common nanostructured materials with one dimensional pore and controllable pore diameters, was successfully fabricated by anodizing and widening of the thermally evaporated Al film on the compact TiO2 layer. Using AAO as a scaffold for perovskite, we obtained 1-D shaped perovskite absorber, and over 15% photo conversion efficiency was obtained. I-V measurement, photoluminescence, impedance, and time-limited current collection were performed to determine vertically arrayed 1-D perovskite solar cells shaped in comparison with planar heterojunction and mesoporous alumina structured solar cells. Our findings lead to reveal the influence of the shape of perovskite layer on photoelectrical properties.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.23.1-23.1
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• 2009

ZnO is of great interest for various technological applications ranging from optoelectronics to chemical sensors because of its superior emission, electronic, and chemical properties. In addition, vertically well-aligned ZnO nanorods on large areas with good optical and structural properties are of special interest for the fabrication of electronic and optical nanodevices. To date, several approaches have been proposed for the growth of one-dimensional (1D) ZnO nanostructunres. Several groups have been reported the MOCVD growth of ZnO nanorods with no metal catalysts at $400^{\circ}C$, and fabricated a well-aligned ZnO nanorod array on a PLD prepared ZnO film by using a catalyst-free method. It has been suggested that the synthesis of ZnO nanowires using a template-less/surfactant-free aqueous method. However, despite being a well-established and cost-effective method of thin film deposition, the use of magnetrons puttering to grow ZnO nanorods has not been reported yet. Additionally,magnetron sputtering has the dvantage of producing highly oriented ZnO film sat a relatively low process temperature. Currently, more effort has been concentrated on the synthesis of 1D ZnO nanostructures doped with various metal elements (Al, In, Ga, etc.) to obtain nanostructures with high quality,improved emission properties, and high conductance in functional oxide semiconductors. Among these dopants, Ga-doped ZnO has demonstrated substantial advantages over Al-doped ZnO, including greater resistant to oxidation. Since the covalent bond length of Ga-O ($1.92\;{\AA}$) is nearly equal to that of Zn-O ($1.97\;{\AA}$), high electron mobility and low electrical resistivity are also expected in the Ga-doped ZnO. In this article, we report the successful growth of Ga-doped ZnO nanorods on c-Sapphire substrate without metal catalysts by magnetrons puttering and our investigations of their structural, optical, and field emission properties.

• Korean Journal of Materials Research
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• v.26 no.11
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• pp.604-610
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• 2016

We report on the fabrication and characterization of a novel $Cu_2O/CuO$ heterojunction structure with CuO nanorods embedded in $Cu_2O$ thin film as an efficient photocathode for photoelectrochemical (PEC) solar water splitting. A CuO nanorod array was first prepared on an indium-tin-oxide-coated glass substrate via a seed-mediated hydrothermal synthesis method; then, a $Cu_2O$ thin film was electrodeposited onto the CuO nanorod array to form an oxide semiconductor heterostructure. The crystalline phases and morphologies of the heterojunction materials were examined using X-ray diffraction and scanning electron microscopy, as well as Raman scattering. The PEC properties of the fabricated $Cu_2O/CuO$ heterojunction photocathode were evaluated by photocurrent conversion efficiency measurements under white light illumination. From the observed PEC current density versus voltage (J-V) behavior, the $Cu_2O/CuO$ photocathode was found to exhibit negligible dark current and high photocurrent density, e.g. $-1.05mA/cm^2$ at -0.6 V vs. $Hg/HgCl_2$ in $1mM\;Na_2SO_4$ electrolyte, revealing the effective operation of the oxide heterostructure. The photocurrent conversion efficiency of the $Cu_2O/CuO$ photocathode was estimated to be 1.27% at -0.6 V vs. $Hg/HgCl_2$. Moreover, the PEC current density versus time (J-T) profile measured at -0.5 V vs. $Hg/HgCl_2$ on the $Cu_2O/CuO$ photocathode indicated a 3-fold increase in the photocurrent density compared to that of a simple $Cu_2O$ thin film photocathode. The improved PEC performance was attributed to a certain synergistic effect of the bilayer heterostructure on the light absorption and electron-hole recombination processes.

• Journal of the Korean institute of surface engineering
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• v.49 no.5
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• pp.472-476
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• 2016

The nano-array of the vertically aligned rod-like particles grown on ZnO coated glass-substrates was obtained via hydrothermal process. ZnO thin film coatings were prepared on the glass substrates using a MOD (metallorganic deposition) dip-coating method with zinc chloride dihydrate as starting material and 2-ethylhexanol as solvent. ZnO nanorods were synthesized on the seeded substrates by hydrothermal method at $80^{\circ}C$ using zinc-nitrate hexahydrate as a Zn source and sodium hydroxide as a mineralizer. Under the hydrothermal condition, the rod-like nanocrystals were easily attaching on the already ZnO seeded (coated) glass surface. It has been shown that the hydrothermal synthesis parameters are key factors in the nucleation and growth of ZnO crystallites. By controlling of hydrothermal parameters, the ZnO particulate morphology could be easily tailored. Rod-shaped ZnO arrays on the glass substrates consisted of elongated crystals having 6-fold symmetry were predominantly developed at high Zn precursor concentration in the pH range 7~11.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.4
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• pp.31-37
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• 2017

Recently, there has been substantial interest in flexible and wearable devices whose properties and performances are close to conventional devices on hard substrates. Despite the advancement on flexible devices with organic semiconductors or carbon nanotube films, their performances are limited by the carrier scattering at the molecular to molecular or nanotube-to-nanotube junctions. Here in this study, we demonstrate on the vertical semiconductor crystal array embedded in flexible polymer matrix. Such structures can relieve the strain effectively, thereby accommodating large flexural deformation. To achieve such structure, we first established a low-temperature solution-phase synthesis of single crystalline 3D architectures consisting of epitaxially grown ZnO constituent crystals by position and growth direction controlled growth strategy. The ZnO vertical crystal array was integrated into a piece of polydimethylsiloxane (PDMS) substrate, which was then mechanically detached from the hard substrate to achieve the freestanding ZnO-polymer composite. In addition, the characteristics of transferred ZnO were confirmed by additional structural and photoluminescent measurements. The ZnO vertical crystal array embedded in PDMS was further employed as pressure sensor that exhibited an active response to the external pressure, by piezoelectric effect of ZnO crystal.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.226-226
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• 2013

Si is a dominant solar material, which is the second most abundant element in the earth giving a benefit in the aspect in cost with low toxicity. However, the inherent limit of Si has an indirect band gap of 1.1 eV resulting in the limited optical absorption. Therefore, a critical issue has been raised to increase the utilization of the incident light into the Si absorber. The enhancement of light absorption is a crucial to improve the performances and thus relieves the cost burden of Si photovoltaics. For the optical aspect, an efficient design of a front surface, where the incident light comes in, has been intensively investigated to improve the performance of photon absorption. Lambertian light trapping can be attained when the light active surface is ideally rough to increase the optical length by about 50 compared to a planar substrate. This suggests that an efficient design may reduce thickness of the Si absorber from the conventional 100~300 ${\mu}m$ to less than 3 ${\mu}m$. Theoretically, a hole-array structure satisfies an equivalent efficiency of c-Si with only one-twelfth mass and one-sixth thickness. Various approaches have been applied to improve the incident light utilization in a Si absorber using textured structures, periodic gratings, photonic crystals, and nanorod arrays. We have designed hole and pillar structured Si absorbers. Four-different Si absorbers have been simultaneously fabricated on an identical Si wafer with hole arrays or pillar arrays at a fixed depth of 2 ${\mu}m$. We have found that the significant enhanced solar cell performances both for the hole arrayed and pillar arrayed Si absorbers compared to that of a planar Si wafer resulting from the effective improvement in the quantum efficiencies.

• Korean Journal of Materials Research
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• v.27 no.12
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• pp.658-663
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• 2017

Urchin-structured zinc oxide(ZnO) nanorod(NR) gas sensors were successfully demonstrated on a polyimide(PI) substrate, using single wall carbon nanotubes(SWCNTs) as the electrode. The ZnO NRs were grown with ZnO shells arranged at regular intervals to form a network structure with maximized surface area. The high surface area and numerous junctions of the NR network structure was the key to excellent gas sensing performance. Moreover, the SWCNTs formed a junction barrier with the ZnO which further improved sensor characteristics. The fabricated urchin-structured ZnO NR gas sensors exhibited superior performance upon $NO_2$ exposure with a stable response of 110, fast rise and decay times of 38 and 24 sec, respectively. Comparative analyses revealed that the high performance of the sensors was due to a combination of high surface area, numerous active junction points, and the use of the SWCNTs electrode. Furthermore, the urchin-structured ZnO NR gas sensors showed sustainable mechanical stability. Although degradation of the devices progressed during repeated flexibility tests, the sensors were still operational even after 10000 cycles of a bending test with a radius of curvature of 5 mm.