• 한국자동차공학회논문집
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• 제7권5호
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• pp.73-80
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• 1999

To decrease NOx and SOx using PPCP(Pulse-induced Plasma Chemical Process). This study is tried to obtain the relation and the basic data under the various conditions such the initial concentrations of NOx and SOx. The additional amount of hydrocarbon gases. The concentration of oxygen and input power etc. Especially, this study is focused on the effects of the additional hydrocarbon gases on the decrease of NOx and SOx.

• 비파괴검사학회지
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• 제34권6호
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• pp.457-466
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• 2014

This paper presents an analytic and numerical simulation of the generation and propagation of pico-second ultrasound with nano-scale wavelength, enabling the production of bulk waves in thin films. An analytic model of laser-matter interaction and elasto-dynamic wave propagation is introduced to calculate the elastic strain pulse in microstructures. The model includes the laser-pulse absorption on the material surface, heat transfer from a photon to the elastic energy of a phonon, and acoustic wave propagation to formulate the governing equations of ultra-short ultrasound. The excitation and propagation of acoustic pulses produced by ultra-short laser pulses are numerically simulated for an aluminum substrate using the finite-difference method and compared with the analytical solution. Furthermore, Fourier analysis was performed to investigate the frequency spectrum of the simulated elastic wave pulse. It is concluded that a pico-second bulk wave with a very high frequency of up to hundreds of gigahertz is successfully generated in metals using a 100-fs laser pulse and that it can be propagated in the direction of thickness for thickness less than 100 nm.

• 한국자동차공학회논문집
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• 제6권4호
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• pp.211-218
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• 1998

The purpose of this study is to investigate the reduction rate of NOX according to several parameters(NOX concentration, the flow rate of gas, the additional amount of C2H4, input voltage, input frequency and so in) when NOX is reduced by using PPCP(Pulse-induced Plasma Chemical Process). PPCP is based on the plasma-chemical technology, which induces narrow voltage pulses to binary electrode structure.

• 한국레이저가공학회지
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• 제12권1호
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• pp.7-13
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• 2009

Engineering ceramics as sapphire are widely used in industry owing to their superior mechanical and corrosion properties. However, micromachining of sapphire is a considerable challenge due to its transparency. Recently, direct ablation of sapphire has been demonstrated with a visible laser pulse at sufficiently high laser intensity. In this work, the theoretical model for pulsed laser ablation of sapphire is suggested and numerical analysis is carried out using the model. Sapphire ablation begins with plasma generation by the laser interaction with surface defects, impurities and contaminations in the initial stage of machining. Subsequent absorption of the visible laser beam can be explained by three mechanisms: metalization of sapphire surface due to the EUV radiation from the hot plasma, increments of surface roughness and temperature-dependent absorption coefficient. Comparison of the computation results with experimental observation indicates that the proposed model of sapphire is reasonable.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.134-134
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• 2011

High-k dielectric materials such as $HfO_2$, $ZrO_2$ and $Al_2O_3$ increase gate capacitance and reduce gate leakage current in MOSFET structures. This behavior suggests that high-k materials will be promise candidates to substitute as a tunnel barrier. Furthermore, stack structure of low-k and high-k tunnel barrier named variable oxide thickness (VARIOT) is more efficient.[1] In this study, we fabricated the $WSi_2$ nanocrystals nonvolatile memory device with $SiO_2/HfO_2/Al_2O_3$ tunnel layer. The $WSi_2$ nano-floating gate capacitors were fabricated on p-type Si (100) wafers. After wafer cleaning, the phosphorus in-situ doped poly-Si layer with a thickness of 100 nm was deposited on isolated active region to confine source and drain. Then, on the gate region defined by using reactive ion etching, the barrier engineered multi-stack tunnel layers of $SiO_2/HfO_2/Al_2O_3$ (2 nm/1 nm/3 nm) were deposited the gate region on Si substrate by using atomic layer deposition. To fabricate $WSi_2$ nanocrystals, the ultrathin $WSi_2$ film with a thickness of 3-4 nm was deposited on the multi-stack tunnel layer by using direct current magnetron sputtering system [2]. Subsequently, the first post annealing process was carried out at $900^{\circ}C$ for 1 min by using rapid thermal annealing system in nitrogen gas ambient. The 15-nm-thick $SiO_2$ control layer was deposited by using ultra-high vacuum magnetron sputtering. For $SiO_2$ layer density, the second post annealing process was carried out at $900^{\circ}C$ for 30 seconds by using rapid thermal annealing system in nitrogen gas ambient. The aluminum gate electrodes of 200-nm thickness were formed by thermal evaporation. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer with HP 41501A pulse generator, an Agillent 81104A 80MHz pulse/pattern generator and an Agillent E5250A low leakage switch mainframe. We will discuss the electrical properties for application next generation non-volatile memory device.