• The KSFM Journal of Fluid Machinery
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• v.9 no.2 s.35
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• pp.19-24
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• 2006

Nano fountain-pen is a novel device to make the constant patterning in micro process using new designed probe. Fountain-pen nanolithography (FPN) is applied for constant supply of liquid in conjunction of patterns and surface variation in the micro process. In this study, nuo fountain-pen is composed with reservoir, micro channels, tip and scondary chamber. Instead of traditional method only using capillary force, liquid can be definitely and exactly injected with membrane pumping by the repulse force of tip. It is dfficult to perform experiments in the micro range so that we carried out a numerical analysis for internal flow, using a commercial code, FlUENT, The velocity, pressure and flow rate are obtained under laminar, unsteady, three-dimensional incompressible flow with no-slip condition, and results are graphically described.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.502-505
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• 2005

To overcome some of the limitations in the conventional photolithography technique, MC-SPL which has advantages such as flexibility and high speed was developed in the past. To make a fine pattern using MC-SPL, there are many variables to control, for example, applied load, scribing speed, chemical etching condition, and etc. In this work, the effect of contact load on the width of the pattern was investigated. The load not only influences the width of the pattern but it also affects the wear of the probe tip. It was found that it is beneficial to load the tip in two stages. Futhermore, the experimental results showed that the pattern width was more sensitive to the initial contact force.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.32-32
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• 2009

Silicon carbide (SiC) is a wide-bandgap semiconductor that has materials properties necessary for the high-power, high-frequency, high-temperature, and radiation-hard condition applications, where silicon devices cannot perform. SiC is also the only compound semiconductor material. on which a silicon oxide layer can be thermally grown, and therefore may fabrication processes used in Si-based technology can be adapted to SiC. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, we investigated that the local oxide growth on SiC under various conditions and demonstrated that an increased (up to ~100 nN) tip loading force (LF) on highly-doped SiC can lead a direct oxide growth (up to few tens of nm) on 4H-SiC. In addition, the surface potential and topography distributions of nano-scale patterned structures on SiC were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the nano-scale patterned on SiC was higher than that of original SiC surface. The results confirm the concept of the work function and the barrier heights of oxide structures/SiC structures.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.4-4
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• 2010

박막의 물성을 분석하는 방법에는 광학을 이용한 분광학 분석법과 나노크기의 tip을 이용한 나노트라이볼로지 분석법이 대표적이라 할 수 있다. 분광학 분석법에는 주로 X-ray 회절분석, Raman 분광기, IR 분광기 등등이 가장 대표적으로 사용되어지는 분석 장치들이다. 이러한 분광학 분석은 광학을 시료에 조사하여 이로부터 획득되는 강도(intensity)를 분석하는 방법으로 간접적인 분석이라 할 수 있다. 이에 반하여 나노트라이볼로지는 나노크기의 tip을 이용하여 시료 표면을 직접적인 방법으로 분석하여 시료의 형상, 탄성, 강도, 마찰력 등의 정보를 제공하며, tip에의 전기적 신호를 부과하여 시료 표면의 국부적인 potential, electric current를 측정하게 된다. 이에 해당되는 대표적인 분석 장치로는 nano-indenter system과 SPM (Scanning Probe Microscopy)이 있다. 따라서, 이 논문에서는 나노트라이볼로지의 대표적인 장치인 nano-indenter system과 SPM에 대한 간단한 원리를 소개하고 다양한 분야에 대한 실제적인 분석을 사례를 통하여 나노트라이볼로지의 가치를 확인하고자 한다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.11
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• pp.990-995
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• 2005

This paper reports the fabrication and characterization of $5\;\times\;5$ thermal cantilever array for nano-scaled memory device application. The $5\;\times\;5$ thermal cantilever array with integrated tip heater has been fabricated with MEMS technology on SOI wafer using 7 photo masking steps. All single-level cantilevers have a diode in order to eliminate any electrical cross-talk between adjacent tips. Electrical measurements of fabricated thermal cantilever away show its own thermal heating mechanism. Thermal heating is demonstrated by the reflow of coated photoresist on the cantilever array surface.

• Journal of Magnetics
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• v.11 no.3
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• pp.135-138
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• 2006

We studied local anodization on permalloy $(Ni_{80}Fe_{20})$ thin film with an atomic force microscope (AFM), which was performed by applying a voltage between the permalloy sample and conductive AFM tip. Comparing with anodization on Si (100) substrate, nano-structures on the permalloy thin film was fabricated with low processability.In order to improve the processability on the permalloy thin film, we used dot-fabrication method, thatis, a conductive AFM probe was kept at a position on the film during the anodization process.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.463-464
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• 2006

This paper present experimental results by non-contact mode Atomic Force Microscopy using high aspect ratio tips (HAR-T). We fabricated the carbon nanotube tip based on dielectrophoresis and the carbon nano probe by focused ion beam after dielectrophoretic assembling. In this paper, we measure AAO sample and trench structure to estimate HAR-T's performance and compared with conventional Si tip. We confirmed that results of HAR-T's performance in non contact mode was very superior than conventional tip.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.314-324
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• 1996

Scanning probe microscopes (SPMs) such as the scanning tunneling microscope (STM) and the atomic force microscope (AFM) were used for surface modification tools at the nanometer scale. Material surfaces, i. e., titanium, hydrogen-terminated silicon and trimethylsilyl organosilane monolayer on silicon, were locally oxidized with the best lateral spatial resolution of 20nm. The principle behind this proximal probe oxidation method is scanning probe anodization, that is, the SPM tip-sample junction connected through a water column acting as a minute electrochemical cell. An SPM-nanolithogrphy process was demonstrated using the organosilane monolayer as a resist. Area-selective chemical modifications, i. e., etching, electroless plating with gold, monolayer deposition and immobilization of latex nanoparticles; were achieved in nano-scale resolution. The area-selectivity was based on the differences in chemical properties between the SPM-modified and unmodified regions.

• 정보저장시스템학회:학술대회논문집
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• 2005.10a
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• pp.185-189
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• 2005

We reported here nano-scale electrical phase-change recording in amorphous $Ge_2Sb_2Te_5$ media using an atomic force microscope (AFM) having conducting probes. In recording process, a pulse voltage is applied to the conductive probe that touches the media surface to change locally the electrical resistivity of a film. However, in contact operation, tip/media wear and contamination could major obstacles, which degraded SNR, reproducibility, and lifetime. In order to overcome tip/media wear and contamination in contact mode operation, we adopted the W incorporated diamond-like carbon (W-DLC) films as a protective layer. Optimized mutilayer media were prepared by a hybrid deposition system of PECVD and RF magnetron sputtering. When suitable electrical pulses were applied to media through the conducting probe, it was observed that data bits as small as 25 nm in diameter have been written and read with good reproducibility, which corresponds to a data density of $1 Tbit/inch^2$. We concluded that stable electrical phase-change recording was possible mainly due to W-DLC layer, which played a role not only capping layer but also resistive layer.

• Tribology and Lubricants
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• v.17 no.4
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• pp.276-282
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• 2001

Nano adhesion between SPM (scanning probe microscope) tips and 075 (octadecyltrichlorosilane) SAM (self-assembled monolayer) was experimentally studied. Tests were performed to measure the nano adhesion and friction in both AFM(atomic force microscope) and LFM(lateral force microscope) modes in various conditions of relative humidity. OTS SAM was formed on Si-wafer (100) surfaces, and Si$_3$N$_4$ tips of different radius of curvature were used. When the surface was hydrophobic, the adhesion and friction forces were found lower than those of bare Si-wafer. Results also showed that micro-adhesion force increased as the relative humidity and the tip radius of curvature increased. The main parameter for affecting the micro-adhesion was found absorbed humidity on the contact surface. These results were discussed with the JKR model and a capillary force caused by absorbed water.