• Title/Summary/Keyword: Nano-patterning

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Effect of PVP(polyvinylpyrrolidone) on the Ag Nano Ink Property for Reverse Offset Printing (PVP(polyvinylpyrrolidone)가 리버스 오프셋용 은 나노 잉크 물성에 미치는 영향)

  • Han, Hyun-Suk;Kwak, Sun-Woo;Kim, Bong-Min;Lee, Taik-Min;Kim, Sang-Ho;Kim, In-Young
    • Korean Journal of Materials Research
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    • v.22 no.9
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    • pp.476-481
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    • 2012
  • Among the various roll-to-roll printing technologies such as gravure, gravure-offset, and reverse offset printing, reverse offset printing has the advantage of fine patterning, with less than 5 ${\mu}m$ line width. However, it involves complex processes, consisting of 1) the coating process, 2) the off process, 3) the patterning process, and 4) the set process of the ink. Each process demands various ink properties, including viscosity, surface tension, stickiness, and adhesion with substrate or clich$\acute{e}$; these properties are critical factors for the printing quality of fine patterning. In this study, Ag nano ink was developed for reverse offset printing and the effect of polyvinylpyrrolidone(PVP), used as a capping agent of Ag nano particles, on the printing quality was investigated. Ag nano particles with a diameter of ~60 nm were synthesized using the conventional polyol synthesis process. Ethanol and ethylene glycol monopropyl ether(EGPE) were used together as the main solvent in order to control the drying and absorption of the solvents during the printing process. The rheological behavior, especially ink adhesion and stickiness, was controlled with washing processes that have an effect on the offset process and that played a critical role in the fine patterning. The electrical and thermal behaviors were analyzed according to the content of PVP in the Ag ink. Finally, an Ag mesh pattern with a line width of 10 ${\mu}m$ was printed using reverse offset printing; this printing showed an electrical resistivity of 36 ${\mu}{\Omega}{\cdot}cm$ after sintering at $200^{\circ}C$.

Fabrication of silicon nano-ribbon and nano-FETs by using AFM anodic oxidation

  • Hwang, Min-Yeong;Choe, Chang-Yong;Jeong, Ji-Cheol;An, Jeong-Jun;Gu, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.54-54
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    • 2009
  • AFM anodic oxidation has the capability of patterning complex nano-patterns under relatively high speeds and low voltage. We report the fabrication using a atomic force microscopy (AFM) of silicon nano-ribbon and nano-field effect transistors (FETs). The fabricated nano-patterns have great potential characteristics in various fields due to their interesting electronic, optical and other profiles. The results shows that oxide width and the separation between the oxide patterns can be optimally controlled. The subsequently fabricated silicon nano-ribbon and nano-FET working devices were controled by various tip-sample bias-voltages and scan speed of AFM anodic oxidation. The results may be applied for highly integration circuits and sensitive optical sensor applications.

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Novel Method to Form Metal Electrodes by Self-Alignment and Self-Registration Processes

  • Shin, Dong-Youn
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1197-1199
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    • 2009
  • Self-alignment for the fabrication of printed thin film transistors has become of great interest because of the resolution and registration limits of printing technologies. In this work, self-patterning and selfregistration processes are introduced, which do not need surface energy patterning and the resulting minimum gate channel length could be down to $11.2{\mu}m$ with the sheet resistance of 2.6 ${\Omega}/{\square]$ for the source and drain electrodes.

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Thin Film Transistor fabricated with CIS semiconductor nanoparticle

  • Kim, Bong-Jin;Kim, Hyung-Jun;Jung, Sung-Mok;Yoon, Tae-Sik;Kim, Yong-Sang;Choi, Young-Min;Ryu, Beyong-Hwan;Lee, Hyun-Ho
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1494-1495
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    • 2009
  • Thin Film Transistor(TFT) having CIS (CuInSe) semiconductor layer was fabricated and characterized. Heavily doped Si was used as a common gate electrode and PECVD Silicon nitride ($SiN_x$) was used as a gate dielectric material for the TFT. Source and drain electrodes were deposited on the $SiN_x$ layer and CIS layer was formed by a direct patterning method between source and drain electrodes. Nanoparticle of CIS material was used as the ink of the direct patterning method.

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Nanomaterials Research Using Quantum Beam Technology

  • Kishimoto, Naoki;Kitazawa, Hideaki;Takeda, Yoshihiko
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.10a
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    • pp.7-7
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    • 2011
  • Quantum beam technology has been expected to develop breakthroughs for nanotechnology during the third basic plan of science and technology (2006~2010). Recently, Green- or Life Innovations has taken over the national interests in the fourth basic science and technology plan (2011~2015). The NIMS (National Institute for Materials Science) has been conducting the corresponding mid-term research plans, as well as other national projects, such as nano-Green project (Global Research for Environment and Energy based on Nanomaterials science). In this lecture, the research trends in Japan and NIMS are firstly reviewed, and the typical achievements are highlighted over key nanotechnology fields. As one of the key nanotechnologies, the quantum beam research in NIMS focused on synchrotron radiation, neutron beams and ion/atom beams, having complementary attributes. The facilities used are SPring-8, nuclear reactor JRR-3, pulsed neutron source J-PARC and ion-laser-combined beams as well as excited atomic beams. Materials studied are typically fuel cell materials, superconducting/magnetic/multi-ferroic materials, quasicrystals, thermoelectric materials, precipitation-hardened steels, nanoparticle-dispersed materials. Here, we introduce a few topics of neutron scattering and ion beam nanofabrication. For neutron powder diffraction, the NIMS has developed multi-purpose pattern fitting software, post RIETAN2000. An ionic conductor, doped Pr2NiO4, which is a candidate for fuel-cell material, was analyzed by neutron powder diffraction with the software developed. The nuclear-density distribution derived revealed the two-dimensional network of the diffusion paths of oxygen ions at high temperatures. Using the high sensitivity of neutron beams for light elements, hydrogen states in a precipitation-strengthened steel were successfully evaluated. The small-angle neutron scattering (SANS) demonstrated the sensitive detection of hydrogen atoms trapped at the interfaces of nano-sized NbC. This result provides evidence for hydrogen embrittlement due to trapped hydrogen at precipitates. The ion beam technology can give novel functionality on a nano-scale and is targeting applications in plasmonics, ultra-fast optical communications, high-density recording and bio-patterning. The technologies developed are an ion-and-laser combined irradiation method for spatial control of nanoparticles, and a nano-masked ion irradiation method for patterning. Furthermore, we succeeded in implanting a wide-area nanopattern using nano-masks of anodic porous alumina. The patterning of ion implantation will be further applied for controlling protein adhesivity of biopolymers. It has thus been demonstrated that the quantum beam-based nanotechnology will lead the innovations both for nano-characterization and nano-fabrication.

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