• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.830-833
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• 2002

최근 나노 구조 (nano structure)를 만들기 위한 시도 중 하나로서 스스로 조직화(self organization)하여 나노 구조를 형성하는 물질을 나노 소자 제작을 위한 형틀 (template)로 이용하려는 시도가 활발히 진행되고 있다. 이러한 물질로서 주목을 받고있는 것 중 하나가 전해질 용액에서 알루미늄을 양극산화(anodization) 시켰을 때 형성되는 다공성 알루미나 박막이다. 본 연구에서는 고 순도 알루미늄을 기계적으로 연마(mechanical polishing)하고 공기 분위기에서 어닐링 (annealing)하여 알루미늄을 재결정화(recrystallization) 시키고 인가 전압이 40 V인 정 전압하에서 0.3 M의 수산(oxalic acid)을 전해질로 사용하면서 양극산화를 수행하여 평균 직경이 65 nm인 고도로 배열된 육방밀집구조의 나노 다공성 박막을 제작하였다. 또한 같은 방향의 육방밀집 배열은 크기가 수 ${\mu}m$인 영역(grain)을 형성하고 있었으며, 평균적인 pore의 밀도는 $1.1{\times}10^{10}/cm^2$였다.

• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.394-397
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• 2012

In this work, we studied the influence of the dopant elements concentration on the properties of SnO2 thin films deposited by pulsed laser deposition. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Hall effect measurement and UV-Vis studies were performed to characterize the deposited films. XRD results showed that the films had polycrystalline nature with tetragonal rutile structure. FE-SEM micrographs revealed that the as deposited films composed of dense microstructures with uniform grain size distribution. All the films show n-type conduction and the best transparent conductive oxide (TCO) performance was obtained on 6 wt% Sb2O5 doped SnO2 film prepared at pO2 of 60mtorr and Ts of 500 ℃. Its resitivity, optical transmittance, figure of merit are 7.8 × 10-4 Ω cm, 85% and 1.2 × 10-2 Ω-1, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.9
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• pp.717-722
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• 2012

In this work, we study on the effects of the oxygen pressure on the structural and crystalline of MgZnO thin films. MgZnO thin films were deposited on p-Si (111) substrates by using pulsed laser deposition. The X-ray diffraction analysis and energy-dispersive X-ray results revealed that as the oxygen pressure increased and Mg content in the MgZnO films decreased. Also Crystal structure was changed from cubic rock salt to hexagonal wurtzite. Alpha step and atomic force microscopy results showed that the thickness of the films are about 100 nm, and it has been found that the MgZnO (002) preferred orientation were deposited with increasing the oxygen pressure. Therefore, the effect of the preferred orientation, the crystallization grew in the form of the columnar; Grain size and RMS of the films were increased with increasing oxygen pressure.

• Korean Journal of Materials Research
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• v.21 no.4
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• pp.216-219
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• 2011

Perovskite manganites such as $RE_{1-x}A_xMnO_3$ (RE = rare earth, A = Ca, Sr, Ba) have been the subject of intense research in the last few years, ever since the discovery that these systems demonstrate colossal magnetoresistance (CMR). The CMR is usually explained with the double-exchange (DE) mechanism, and CMR materials have potential applications for magnetic switching, recording devices, and more. However, the intrinsic CMR effect is usually found under the conditions of a magnetic field of several Teslas and a narrow temperature range near the Curie temperature ($T_c$). This magnetic field and temperature range make practical applications impossible. Recently, another type of MR, called the low-field magnetoresistance(LFMR), has also been a research focus. This MR is typically found in polycrystalline half-metallic ferromagnets, and is associated with the spin-dependent charge transport across grain boundaries. Composites with compositions $La_{0.7}(Ca_{1-x}Sr_x)_{0.3}MnO_3)]_{0.99}/(BaTiO_3)_{0.01}$ $[(LCSMO)_{0.99}/(BTO)_{0.01}]$were prepared with different Sr doping levels x by a standard ceramic technique, and their electrical transport and magnetoresistance (MR) properties were investigated. The structure and morphology of the composites were studied by X-ray diffraction (XRD) and scanning electronic microscopy (SEM). BTO peaks could not be found in the XRD pattern because the amount of BTO in the composites was too small. As the content of x decreased, the crystal structure changed from orthorhombic to rhombohedral. This change can be explained by the fact that the crystal structure of pure LCMO is orthorhombic and the crystal structure of pure LSMO is rhombohedral. The SEM results indicate that LCSMO and BTO coexist in the composites and BTO mostly segregates at the grain boundaries of LCSMO, which are in accordance with the results of the magnetic measurements. The resistivity of all the composites was measured in the range of 90-400K at 0T, 0.5T magnetic field. The result indicates that the MR of the composites increases systematically as the Ca concentration increases, although the transition temperature $T_c$ shifts to a lower range.

• Journal of Electrochemical Science and Technology
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• v.14 no.4
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• pp.377-387
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• 2023

Ni-W/Al₂O₃ nano-composites were electrodeposited on mild steel substrate for mechanical and corrosion resistance applications. This study focused on the preparation of Ni-W/Al₂O₃ nano-composite coating with various quantity of Al₂O₃ incorporations. The addition of Al₂O₃ in the electrolytes were varied from 1-10 g/L in electrolytes and the Al₂O₃ incorporation in Ni-W/Al₂O₃ nano-composite coatings were obtained from 1.82 to 13.86 wt.%. The incorporation of Al₂O₃ in Ni-W alloy matrix influenced the grain size, surface morphology and structural properties were observed. The distributions of Al₂O₃ particle in alloy matrix were confirmed using electron microscopy (FESEM and TEM) and EDAX mapping analysis. The crystal structure informations were studied using X-ray diffraction method and it confirms that the deposits having cubic crystal structure. The better corrosion rate (0.87 mpy) and microhardness (965 HV) properties were obtained for the Ni-W/Al₂O₃ nano-composite coating with 13.86 wt.% of Al₂O₃ incorporations.

• Korean Journal of Metals and Materials
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• v.48 no.9
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• pp.807-812
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• 2010

In this paper, the Ultrasonic Nanocrystalline Surface Modification (UNSM) surface treatment process was used to induce compressive residual stress and nanocrystalline structure by severe plastic deformation on the UNSM-treated surface. The test results for AISI304 stainless steel demonstrated that the grain size was found to be 23 nm, the dislocation density was increased by $0.2085{\times}10^{18}\;m^{-2}$, and the volume fraction of martensite is defined as 27.6% from austenite so that the surface hardness of the surface is increased from 200 Hv up to 515 Hv. The initial tensile residual stress is changed from 300 MPa to a compressive residual stress of 500 MPa after UNSM treatment. In addition, UNSM was applied under five various conditions, and the results of those conditions were defined as a function of depth quantitative.

• Journal of Electrical Engineering and Technology
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• v.4 no.1
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• pp.118-122
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• 2009

Organic thin film transistors with a pentacene active layer and various polymer gate insulators were fabricated and their performances were investigated. Characteristics of pentacene thin film transistors on different polymer substrates were investigated using an atomic force microscope (AFM) and x-ray diffraction (XRD). The pentacene thin films were deposited by thermal evaporation on the gate insulators of various polymers. Hexamethyldisilazane (HMDS), polyvinyl acetate (PVA) and polymethyl methacrylate (PMMA) were fabricated as the gate insulator where a pentacene layer was deposited at 40, 55, 70, 85, 100 oC. Pentacene thin films on PMMA showed the largest grain size and least trap concentration. In addition, pentacene TFTs of top-contact geometry are compared with PMMA and $SiO_2$ as gate insulators, respectively. We also fabricated pentacene TFT with Poly (3, 4-ethylenedioxythiophene)-Polysturene Sulfonate (PEDOT:PSS) electrode by inkjet printing method. The physical and electrical characteristics of each gate insulator were tested and analyzed by AFM and I-V measurement. It was found that the performance of TFT was mainly determined by morphology of pentacene rather than the physical or chemical structure of the polymer gate insulator

• Bulletin of the Korean Chemical Society
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• v.32 no.9
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• pp.3453-3458
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• 2011

The $Mg_xZn_{1-x}O$ thin films with the various content ratio ranging from 0 to 0.4 were prepared by sol-gel spincoating method. To investigate the effects of content ratio on the structural and optical properties of the $Mg_xZn_{1-x}O$ thin films, scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL) were carried out. With increase in the content ratio, the grain size of the $Mg_xZn_{1-x}O$ thin films was increased, however, at the content ratio above 0.2, MgO particles with cubic structure were formed on the surface of the $Mg_xZn_{1-x}O$ thin films, indicating that the Mg content exceeded its solubility limit in the thin films. The residual stress of the $Mg_xZn_{1-x}O$ thin films is increased with increase in the Mg mole fraction. In the PL investigations, the bandgap and the activation energy of the $Mg_xZn_{1-x}O$ thin films was increased with the Mg mole fraction.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.204.2-204.2
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• 2013

Wide band gap II-VI semiconductors have attracted the interest of many research groups during the past few years due to the possibility of their applications in light-emitting diodes and laser diodes. Among the II-VI semiconductors, ZnO is an important optoelectronic device material for use in the violet and blue regions because of its wide direct band gap (Eg ~3.37 eV) and large exciton binding energy (60 meV). F-doped ZnO (FZO) and undoped ZnO thin films were grown onto quartz substrate by the sol-gel spin-coating method. The doping level in the solution, designated by F/Zn atomic ratio of was varied from 0 to 5 in 1 steps. To investigate the effects of the structure and optical properties of FZO thin films were investigated using X-ray diffraction (XRD), UV-visible spectroscopy, and photoluminescence (PL). In the XRD, the residual stress, FWHM, bond length, and average grain size were changed with increasing the doping concentration. For the PL spectra, the high INBE/IDLE ratio of the FZO thin films doping concentration at 1 at.% than the other samples.

• Korean Journal of Crystallography
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• v.16 no.2
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• pp.141-148
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• 2005

It is well known that the general metals have a lot of grain boundaries. The grain boundaries play a negative role to increase the resistivity and to decrease the conductivity. The small resistivity and the large conductivity have been a goal of the material scientists, and no signal noise, perfect signal transfer, and the realization of the real sound are the dream of electronic engineers and audio manias. Generally, oxygen free copper (OFC) and Ohno continuous casting (OCC) copper cables have been used for the purpose of the precise signal transfer and low noise. However they still include a lot of grain boundaries. In our study, we have grown the single crystal by the Czochralski method and succeeded to produce single crystal wires from the crystal in the dimension of $0.5{\times}0.5{\times}2500mm$. The produced wire still possesses very good single crystal properties. We observed the structure of the wire, and measured the resistance and impedance. Glow Discharge Spectrometer (GDS) was used for analyzing the compositions of copper single crystals and commercial copper. Current-Voltage curve, resistance, total harmonic distortion and speaker frequency response were measured for comparing electrical and acoustic properties of two samples.