• 제목/요약/키워드: Nano-Electronics

검색결과 746건 처리시간 0.026초

Enhanced Internal Quantum Efficiency and Light Extraction Efficiency of Light-emitting Diodes with Air-gap Photonic Crystal Structure Formed by Tungsten Nano-mask

  • Cho, Chu-Young;Hong, Sang-Hyun;Kim, Ki Seok;Jung, Gun-Young;Park, Seong-Ju
    • Bulletin of the Korean Chemical Society
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    • 제35권3호
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    • pp.705-708
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    • 2014
  • We demonstrate the blue InGaN/GaN multiple quantum wells light-emitting diodes (LEDs) with an embedded air-gap photonic crystal (PC) which was fabricated by the lateral epitaxial overgrowth of GaN layer on the tungsten (W) nano-masks. The periodic air-gap PC was formed by the chemical reaction of hydrogen with GaN on the W nano-mask. The optical output power of LEDs with an air-gap PC was increased by 26% compared to LEDs without an air-gap PC. The enhanced optical output power was attributed to the improvement in internal quantum efficiency and light extraction efficiency by the air-gap PC embedded in GaN layer.

Band gap control by tri-block nanoribbon structure of graphene and h-BN

  • 이지우;정가운
    • EDISON SW 활용 경진대회 논문집
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    • 제4회(2015년)
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    • pp.324-329
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    • 2015
  • First-principles investigations on the hybrid one dementional hexagonal hybrboron-nitride nano ribbons (BNNRs) with a armchair graphene nano-ribbons(AGRNRs), are presented. Electronics properties of the mixed armchair BNC nano-ribbon (BNCNRs) structure show control of a band gap on all cases at the special K-point. And we have studied, the band gap is direct in all cases. The band gap of mixed ABNCNRs could be divided into three groups (${\Delta}3p$, ${\Delta}3p+1$ and ${\Delta}3p+2$) and decrease with the increase of the width. Also these results show similar to the AGNRs case. Different from the band gap value ordering of AGNRs (${\Delta}3p+1$ > ${\Delta}3p$ > ${\Delta}3p+2$), the ordering of ABNCNRs is ${\Delta}3p$ > ${\Delta}3p+1$ > ${\Delta}3p+2$. The discrepancy may come from the differences between the edges of AGRNRs and the boundaries of hybrid BNCNRs. In addition, the bandgap of ABNCNRs are much smaller than those of the corresponding AGNRs. Our results show that the origin of band gap for BNCNRs with armchair shaped edges arises from both quantum confinement effect of the edges. These results similar to thecase of AGNRs. These properties of hybrid BN/C nano-ribbon structure may offer suitable bandgap to develop nnanoscale electronics and solar cell beyond individual GNRs and BNNRs.

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Quantitative Label-free Biodetection of Acute Disease Related Proteins Based on Nanomechanical Dynamic Microcantilevers

  • Hwang, Kyo-Seon;Cha, Byung-Hak;Kim, Sang-Kyung;Park, Jung-Ho;Kim, Tae-Song
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제7권3호
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    • pp.151-160
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    • 2007
  • We report the label-free biomolecules detection based on nanomechanical micro cantilevers operated in dynamic mode for detection of two marker proteins (myoglobin and creatin kinase-MB (CK-MB)) of acute myocardical infarctions. When the specific binding between the antigen and its antibody occurred on the fuctionalized microcantilever surface, mechanical response (i.e. resonant frequency) of microcantilevers was changed in lower frequency range. We performed the label-free biomolecules detection of myoglobin and CK-MB antigen in the low concentration (clinical threshold concentration range) as much as 1 ng/ml from measuring the dynamic response change of micro cantilevers caused by the intermolecular force. Moreover, we estimate the surface stress on the dynamic microcantilevers generated by specific antibody-antigen binding. It is suggested that our dynamic microcantilevers may enable one to use the sensitive label-free biomolecules detection for application to the disease diagnosis system based on mechanical immuno-sensor.

UPCU의 안정성 검토 및 초정밀 위치결정 (Stability Analysis and Ultra-Precision Positioning for UPCU)

  • 김우진;김재열;윤성운;장종훈;김유홍;최철준
    • 한국공작기계학회:학술대회논문집
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    • 한국공작기계학회 2005년도 춘계학술대회 논문집
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    • pp.48-53
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    • 2005
  • The world, coming into the 21st century, is preparing a new revolution called a knowledge-based society after the industrial society. The interest of the world is concentrated on information technology, nano-technology and biotechnology. In particular, the nano-technology of which study was originally started from an alternative for overcoming semiconductor micro-technology. It can be applied to most industry subject such as electronics, information and communication, machinery, chemistry, bioengineering, energy, etc. They are emerging into the technology that can change civilization of human beings. Specially, ultra precision machining is quickly applied to nano-technology in the field of machinery. Lately, with rapid development of electronics industry and optic industry, there are needs for super precision finishing of various core parts required in such related apparatuses. This paper handles stability of a super precision micro cutting machine that is a core unit of such a super precision finisher, and analyzes the results depending on the hinge type and material change, using FEM analysis. By reviewing the stability, it is possible to achieve the effect of basic data collection for unit control and to reduce trials and errors in unit design and manufacturing.

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Characteristics of Si Nano-Crystal Memory

  • Kwangseok Han;Kim, Ilgweon;Hyungcheol Shin
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제1권1호
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    • pp.40-49
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    • 2001
  • We have developed a repeatable process of forming uniform, small-size and high-density self-assembled Si nano-crystals. The Si nano-crystals were fabricated in a conventional LPCVD (low pressure chemical vapor deposition) reactor at $620^{\circ}c$ for 15 sec. The nano-crystals were spherical shaped with about 4.5 nm in diameter and density of $5{\times}l0^{11}/$\textrm{cm}^2$. More uniform dots were fabricated on nitride film than on oxide film. To take advantage of the above-mentioned characteristics of nitride film while keeping the high interface quality between the tunneling dielectrics and the Si substrate, nitride-oxide tunneling dielectrics is proposed in n-channel device. For the first time, the single electron effect at room temperature, which shows a saturation of threshold voltage in a range of gate voltages with a periodicity of ${\Delta}V_{GS}\;{\approx}\;1.7{\;}V$, corresponding to single and multiple electron storage is reported. The feasibility of p-channel nano-crystal memory with thin oxide in direct tunneling regime is demonstrated. The programming mechanisms of p-channel nano-crystal memory were investigated by charge separation technique. For small gate programming voltage, hole tunneling component from inversion layer is dominant. However, valence band electron tunneling component from the valence band in the nano-crystal becomes dominant for large gate voltage. Finally, the comparison of retention between programmed holes and electrons shows that holes have longer retention time.

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Ni-assisted Fabrication of GaN Based Surface Nano-textured Light Emitting Diodes for Improved Light Output Power

  • Mustary, Mumta Hena;Ryu, Beo Deul;Han, Min;Yang, Jong Han;Lysak, Volodymyr V.;Hong, Chang-Hee
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제15권4호
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    • pp.454-461
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    • 2015
  • Light enhancement of GaN based light emitting diodes (LEDs) have been investigated by texturing the top p-GaN surface. Nano-textured LEDs have been fabricated using self-assembled Ni nano mask during dry etching process. Experimental results were further compared with simulation data. Three types of LEDs were fabricated: Conventional (planar LED), Surface nano-porous (porous LED) and Surface nano-cluster (cluster LED). Compared to planar LED there were about 100% and 54% enhancement of light output power for porous and cluster LED respectively at an injection current of 20 mA. Moreover, simulation result showed consistency with experimental result. The increased probability of light scattering at the nano-textured GaN-air interface is the major reason for increasing the light extraction efficiency.

나노 오일을 이용한 압축기 습동부 재질의 윤활 특성 향상에 관한 연구 (Study on Improvement of Lubrication Characteristics for the Material of Compressor Friction Parts with Nano-oil)

  • 김성춘;김경민;황유진;박영도;이재근
    • 설비공학논문집
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    • 제21권10호
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    • pp.559-563
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    • 2009
  • Performance of refrigerant oil at the thrust-bearing and at the journal-bearing of a scroll compressor is a significant factor. This paper presents the friction and anti-wear characteristics of nano oil with a mixture of a refrigerant oil and carbon nano particles. The characteristics of friction and anti-wear using nano-oil is evaluated using the disk on disk tester for measuring friction surface temperature and the coefficient of friction. The average friction coefficient of nano-oil was reduced by 60% compared to raw oil under 600 N and 1,000 rpm. It is believed that the interaction of nano particles between surfaces can be improved the lubrication in the friction surfaces. Worn surfaces of frictional specimen were also investigated by the optical and atomic force microscopy. Conclusively, it is expected that wear and friction coefficient of compressor can be reduced by alignment applying nano-oil as refrigerant oil.

Spin-transfer Torque Switching in nano-sized MTJ

  • Oh, S.C.;Lee, J.E.;Nam, K.T.;Jeong, J.H.;Yeo, I.S.;Kim, S.T.;Han, W.S.
    • 한국자기학회:학술대회 개요집
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    • 한국자기학회 2007년도 The 1st International Symposium on Advanced Magnetic Materials
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    • pp.61.2-61.2
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    • 2007
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Fabrication of Roll-Printed Organic Thin-Film Transistors using Patterned Polymer Stamp

  • Jo, Jeong-Dai;Yu, Jong-Su;Kim, Dong-Soo;Kim, Kwang-Young;Lee, Eung-Sug
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.243-246
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    • 2008
  • Roll-printed organic thin-film transistors (OTFTs) were fabricated by gravure or flexography printing using patterned PDMS stamp with various channel lengths, silver pastes, coated polyvinylphenol dielectric, and jetted bis(triisopropyl-silylethynyl) pentacene semiconductor on plastic substrates. The roll-printed OTFT parameters were obtained: fieldeffect mobility of $0.1\;cm^2/Vs$, an on/off current ratio of $10^4$ and a subthreshold slope of 2.53 V/decade.

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Emission-type THz NSOM 에 대한 수치해석 (Numerical Analysis of Emission-type THz NSOM)

  • 이경인;윤석호;박홍규;김정회;한해욱
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2006년도 하계종합학술대회
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    • pp.183-184
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    • 2006
  • The simulation on the mechanism of terahertz NSOM(near-field scanning optical microscopy) have been investigated. Based on experimental results, we have demonstrated the antenna effects on the coupling between a metal tip and substrate for an emission-type terahertz NSOM. It has been found that the lateral resolution can be estimated by a simplified model using an infinitesimal dipole in the substrate.

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