• The Magazine of the IEIE
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• v.34 no.7 s.278
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• pp.44-53
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• 2007

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.11
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• pp.1-6
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• 2004

Effective gate resistance, extracted by direct extraction method, is analyzed among various gate length, in nanoscale MOSFET for RFIC. Extracted effective gate resistance is compared to measured data and verified with simplified model. Extracted parameters are accurate to 10GHz. In the same process technology effect has a different kind of gate voltage dependency and frequency dependency compared with general effective gate resistance. Particularly, the characteristic of effective gate resistance before and after threshold voltage is noticeable. When gate voltage is about threshold voltage, effective gate resistance is abnormally high. This characteristic will be an important reference for RF MOSFET modeling using direct extraction method.

• Journal of the Korean Society of Industry Convergence
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• v.24 no.5
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• pp.641-644
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• 2021

Wearable devices and IoT are being utilized in various fields, where all systems are developing in the direction of multi-functionality, low power consumption, and high speed. In this paper, we propose a DC -DC Step-down C onverter for IoT smart devices. The proposed DC -DC Step-down converter is composed of a control block of the power supply stage. It also consists of an overheat protection circuit, under-voltage protection circuit, an overvoltage protection circuit, a soft start circuit, a reference voltage circuit, a lamp generator, an error amplifier, and a hysteresis comparator. The proposed DC-DC converter was designed and fabricated using a Magnachip / Hynix 180nm CMOS process, 1-poly 6-metal, the measured results showed a good match with the simulation results.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.3
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• pp.161-165
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• 2007

In this paper, mesoporous Pt on micro pillars Pt electrode is newly designed, fabricated, and characterized on silicon substrate for non-enzymatic electrochemical sensor micro-chip integrated with CMOS readout circuitry. The fabricated micro/nano Pt electrode has cylindrical hexangular arrayed nano Pt pores with a diameter of 3.2 nm which is formed on top of the micro pillars Pt electrode with approximately $6{\mu}m$ in diameter, $6{\mu}m$ in space, and $50{\mu}m$ in height. The measured current responses of the fabricated plane Pt, mesoporous Pt, and mesoporous Pt on the micro pillar Pt electrodes are approximately $9.9nA/mm^2,\;6.72{\mu}A/mm^2,\;and\;7.67{\mu}A/mm^2$ in 10mM glucose solution with 0.1M phosphate buffered saline (PBS) solution, respectively. In addition, the measured current responses of the fabricated plane Pt, mesoporous Pt, and mesoporous Pt on the micro pillar Pt electrodes are approximately $0.15{\mu}A/mm^2,\;0.56{\mu}A/mm^2,\;and\;0.74{\mu}A/mm^2$ in 0.1mM ascorbic acid (AA) solution with 0.1M phosphate buffered saline (PBS) solution, respectively. This experimental results show that the proposed micro/nano Pt electrode is highly sensitive and promising for CMOS integrated non-enzymatic electrochemical sensor applications. Since the micro-pillar Pt electrode can also be utilized with a micro-fluidic mixer in the sensor chip, the sensor chip can be much smaller, cheaper, and easier to be fabricated.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.12
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• pp.5832-5837
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• 2011

In this paper, we designed a thermal shutdown block for LED applications using a 1 ${\mu}m$ CMOS process. The proposed thermal shutdown protection circuit has been designed with a shut-off temperature of $120^{\circ}C$ and a restart temperature of $90^{\circ}C$ which are suitable conditions for LED driver IC. Also, we got SPICE simulation results of the circuit about process variation of the semiconductor fabrication. From simulation data, process variation rate of the proposed circuit are within 7 % which are good results compared with conventional BJT current mirror type circuit. Finally, we confirmed that the thermal shutdown circuit has good thermal protection function within a LED driver IC.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1627-1628
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• 2006

In this paper, mesoporous only platinum electrode and micro pore platinum electrode with mesoporous Pt are fabricated and characterized on a silicon substrate to check their usability as enzymeless sensing electrodes for developing non-disposable glucose sensors integrated with silicon CMOS read out circuitry. Since most of electrochemical glucose sensors are disposable due to the use of the enzymes that are living creatures, these are limited to use in the in-vivo and continuous monitoring system applications. The proposed mesoporous Pt electrode with approximately 2.5nm in pore diameter and 150nm in height was fabricated by using a nonionic surfactant $C_{16}EO_8$ and an electroplating technique. The micro pore Pt electrode with mesoporous Pt means the mesoporous Pt electrode fabricated on top of micro pore arrayed Pt electrode with approximately $10{\mu}m$ in pore diameter and $80{\mu}m$ in height. The measured current responses at 10mM glucose solution of plane Pt, micro pore Pt, micro pore with mesoporus Pt, and mesoporous Pt electrodes are approximately $9.9nA/mm^2$, $92.4nA/mm^2$, $3320nA/mm^2$ and $44620nA/mm^2$, respectively. These data indicate that the mesoporous Pt electrode is much more sensitive than the other Pt electrodes. Thus, it is promising for non-disposable glucose sensor and electrochemical sensor applications.

• Applied Science and Convergence Technology
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• v.23 no.6
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• pp.317-327
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• 2014

In order to develop nano-devices with much lower power consumption for beyond-CMOS applications, the fundamental understanding and precise control of the electronic properties of ultrathin transition metal oxide (TMO) films are strongly required. The metal-insulator transition (MIT) is not only an important issue in solid state physics, but also a useful phenomenon for device applications like switching or memory devices. For potential use in such application, the electronic structures of MIT, observed for TMO nano-structures, have been investigated using a synchrotron radiation angle-resolved photoelectron spectroscopy system combined with a laser molecular beam epitaxy chamber and a scanning photoelectron microscopy system with 70 nm spatial resolution. In this review article, electronic structures revealed by soft X-ray nano-spectroscopy are presented for i) polarity-dependent MIT and thickness-dependent MIT of TMO ultrathin films of $LaAlO_3/SrTiO_3$ and $SrVO_3/SrTiO_3$, respectively, and ii) electric field-induced MIT of TMO nano-structures showing resistance switching behaviors due to interfacial redox reactions and/or filamentary path formation. These electronic structures have been successfully correlated with the electrical properties of nano-structured films and nano-devices.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1527-1530
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• 2009

A LCoS micro-display using polymer dispersed liquid crystals (PDLCs) for light switching layer was fabricated. The Si backplane of SVGA ($800{\times}600$) with a pixel size of $14{\times}14mm^2$ was prepared by a $0.35{\mu}m$ 18V CMOS process. PDLCs were filled in the gap between backplane and ITO glass by conventional vacuum filling method. The prepared panels were driven by a field sequential color (FSC) scheme at the frequency of 180Hz and were successful in modulating LED lights to show projection images. The preparation and performance of PDLC-LCoS are presented.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.278-279
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• 2007

본 논문에서는 메조포러스 백금 전극이 적용된 무효소 혈당센서를 실리콘 기판 위에 제작하여 향후 CMOS 회로와의 집적이 가능하도록 설계하였으며, 초소형 무효소 혈당센서 구조의 최적화를 위하여 동일한 면적에서 여러 가지 구조의 센서를 설계 및 제작을 하고 그 결과를 비교 분석하였다. 제작된 무효소 혈당센서는 3전극시스템으로 구성되고 그 특성은 작동전극과 타 전극사이의 간격에 가장 민감한 변화를 보였다. 최적화된 구조를 갖는 센서는 11.1mM glucose실험에서 12.9${\mu}A$의 응답전류를 얻었으며 이 값은 효소를 사용한 센서와 비교하여도 월등히 큰 응답임을 알 수 있었다. 또한 제작된 센서들은 구조 최적화를 위하여 $9mm^2$로 동일한 크기로 실험을 하였지만, 이 크기는 응답전류가 매우 크므로 더욱더 소형화가 가능함을 알 수 있다.

• Proceedings of the Korean Vacuum Society Conference
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• 2004.08a
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• pp.66-67
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• 2004