• Proceedings of the Korean Magnestics Society Conference
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• 2005.12a
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• pp.116-116
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• 2005

• Proceedings of the Korean Magnestics Society Conference
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• 2005.12a
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• pp.126-127
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• 2005

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.1
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• pp.76-80
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• 2011

The ITO/Cabon Nano Tube (CNT) nano composites were deposited by nano cluster deposition (ITO) and arc discharge deposition (CNT) on glass substrates. The structural, optical and photovoltaic performance of ITO/CNT nano composites as a counter electrode of dye-sensitized solar-cells (DSSCs) such films were investigated. At low temperature below $250^{\circ}C$, the ITO films deposited on CNT. The ITO/CNT nano composit showed a good optical and electrical property for the counter electrode of DSSCs. When the as-prepared ITO/CNT nano composites are used for the counter electrodes, the photovoltaic parameters are $V_{OC}$ = 0.69 V, $J_{SC}$ = 5.69 mA/$cm^2$, FF = 0.32, and $\eta$ = 0.53 %. The ITO/CNT nano composites showed the possibility for the counter electrode applications of DSSCs.

• Journal of Powder Materials
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• v.13 no.2 s.55
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• pp.144-149
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• 2006

In this research we tried to make nano-sized TiNx by using planetary milling, and we made the composites double layered of titanium and nano-sized TiNx by using spark plasma sintering apparatus after mixing with the different ratio of pure titanium powder, and they were heat treated at $850^{\circ}C$ for 30 minutes. The crystal structures of nano-sized TiNx powders and the composites were analyzed by X-ray diffraction (XRD). The microstructures of the powders were analyzed by using scanning electron microscopy (FESEM) and the 40-50 nm size of nano-sized TiNx particle on the surface of agglomerated particles was investigated. With increasing the ratio of nano-sized TiNx of the composites, the microvickers hardness of the composites was increased.

• Proceedings of the Korean Magnestics Society Conference
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• 2004.12a
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• pp.34-35
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• 2004

• Proceedings of the Korean Vacuum Society Conference
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• 2005.08a
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• pp.91-91
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• 2005

• Proceedings of the Korean Vacuum Society Conference
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• 2008.02a
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• pp.292-292
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• 2008

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1527-1530
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• 2009

A LCoS micro-display using polymer dispersed liquid crystals (PDLCs) for light switching layer was fabricated. The Si backplane of SVGA ($800{\times}600$) with a pixel size of $14{\times}14mm^2$ was prepared by a $0.35{\mu}m$ 18V CMOS process. PDLCs were filled in the gap between backplane and ITO glass by conventional vacuum filling method. The prepared panels were driven by a field sequential color (FSC) scheme at the frequency of 180Hz and were successful in modulating LED lights to show projection images. The preparation and performance of PDLC-LCoS are presented.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.120-120
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• 2011

Graphene is a carbon based material and it has great potential of being utilized in various fields such as electronics, optics, and mechanics. In order to develop graphene-based logic systems, graphene field-effect transistor (GFET) has been extensively explored. GFET requires supporting devices, such as volatile memory, to function in an embedded logic system. As far as we understand, graphene has not been studied for volatile memory application, although several graphene non-volatile memories (GNVMs) have been reported. However, we think that these GNVM are unable to serve the logic system properly due to the very slow program/read speed. In this study, a GVM based on the GFET structure and using an engineered graphene channel is proposed. By manipulating the deposition condition, charge traps are introduced to graphene channel, which store charges temporarily, so as to enable volatile data storage for GFET. The proposed GVM shows satisfying performance in fast program/erase (P/E) and read speed. Moreover, this GVM has good compatibility with GFET in device fabrication process. This GVM can be designed to be dynamic random access memory (DRAM) in serving the logic systems application. We demonstrated GVM with the structure of FET. By manipulating the graphene synthesis process, we could engineer the charge trap density of graphene layer. In the range that our measurement system can support, we achieved a high performance of GVM in refresh (>10 ${\mu}s$) and retention time (~100 s). Because of high speed, when compared with other graphene based memory devices, GVM proposed in this study can be a strong contender for future electrical system applications.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2004.04a
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• pp.482-486
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• 2004

The application of focused ion beam (FIB) technology in micro/nano machining has become increasingly popular. Its use in micro/nano machining has advantages over contemporary photolithography or other micro/nano machining technologies, such as small feature resolution, the ability to process without masks and being accommodating for a variety of materials and geometries. This paper presents that the recent development and our research goals in FIB nano machining technology are given. The emphasis will be on direct milling, or chemical vapor deposition techniques (CVD), and this can distinguish the FIB technology from the contemporary photolithography process and provide a vital alternative to it. After an introduction to the technology and its FIB principles, the recent developments in using milling or deposition techniques for making various high-quality devices and high-precision components at the micro/nano meter scale are examined and discussed. Finally, conclusions are presented to summarize the recent work and to suggest the areas for improving the FIB milling technology and for studying our future research.