• 한국정밀공학회지
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• 제24권4호
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• pp.153-158
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• 2007

Recently nano imprint lithography to fabricate photonic crystal on polymer is preferred because of its simplicity and short process time and ease of precise manufacturing. But, the technique requires the precise mold as an imprinting tool for good replication. These molds are made of the silicon, nickel and quartz. But this is not desirable due to complex fabrication process, high cost. So, we describe a simple, precise and low cost method of fabricating PDMS stamp to make the photonic crystals. In order to fabricate the PDMS mold, we make the original pattern with designed hole array by finding the optimal electron beam writing condition. And then, we have tried to fabricate PDMS mold by the replica molding with ultrasonic vibration and pressure system. We have used the cleaning process to solve the detaching problem on the interface. Using these methods, we acquired the PDMS mold for photonic crystals with characteristics of a good replication. And the accuracy of replication shows below 1% in 440nm at diameter and in 610nm at lattice constant by dimensional analysis by SEM and AFM.

• 한국정밀공학회지
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• 제28권2호
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• pp.239-244
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• 2011

Nano Imprint Lithography(NIL) is technique for copying a pattern from stamp with nano size pattern in order to replicated the materials. It is very important to demold in order to make NIL process effectively. Self Assembled Monolayers(SAM) coater is manufactured by means of decreasing surface energy with the stamp surface treatment to improve release characteristics. Manufactured device contains tilting and rotation option for increasing process life time by coating on the sidewall of the pattern in stamp. The stamp coated with optimized tilting angle $30^{\circ}$ and rotation speed of 10rpm has more imprinting cycles than the stamping coated without tilting and rotation. Effective SAM coating on the sidewall of the pattern in stamp will improve by 50% of process life time.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.1939-1943
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• 2008

Deformation of a mold is measured and analyzed in alignment and curing processes of UV-Imprint Lithography. We are focused on mold deformation caused by a UV resin, which is laminated between a mold and a target glass-panel. The UV resin is viscous in case of liquid state, and the resin will be solidified when being exposed by the ultra-violet light. The viscosity of the resin causes shear force on the mold during the alignment process. Moreover, the shrinkage during phase change from liquid to solid may cause residual stress on the mold. The experiments for measuring temperature and strain are made during alignment and curing process. Strain-gages and thermocouples are used for measuring the strain and variation of temperature on several points of the mold, respectively. The deformation of mold is also simulated and analyzed. The simulation results are compared with the experiments. Finally, sources of alignment errors in large area UV-nanoimprint lithography are discussed.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2006년도 추계학술대회 논문집
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• pp.527-528
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• 2006

• 한국정밀공학회지
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• 제21권6호
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• pp.7-14
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• 2004

나노 임프린트 기술은 기존의 광학적 리소그라피 (optical lithography) 기술보다 저렴한 비용으로 나노 구조물을 대량으로 제조할 수 있을 것으로 기대되고 있는 기술이다. 현재까지 반도체 공정기술의 주류를 이루고 있는 광학적인 리소그라피 기술은, 100nm이상의 CD(Critical Dimension)를 가지는 구조물들을 정밀하게 제조하여, 미소전자공학 (microelectronics) 소자, MEMS/MEMS, 광학소자 등의 제품들을 대량으로 생산하는 데에 널리 활용되고 있다. 반도체 소자의 고집적화 경향에 따라 100 nm 이하의 CD를 가지는 나노 구조물들을 제조할 필요성이 높아지고 있지만, 광학적인 방법으로는 광원의 파장보다 작은 구조물들을 제조하기가 어렵다. 보다 짧은 파장을 가지는 광원을 이용하는 리소그라피 장비가 계속적으로 개발되고 있으나, 그에 따른 장비 비용 및 제조 단가가 기하급수적으로 증가하고 있다.(중략)

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.134.2-134.2
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• 2007

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2009년도 춘계학술대회 논문집
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• pp.873-874
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• 2009

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2010년도 추계학술대회 논문집
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• pp.379-380
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• 2010

• 한국재료학회:학술대회논문집
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• 한국재료학회 2008년도 춘계학술발표대회 및 제14회 신소재 심포지엄
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• pp.34.2-34.2
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• 2008

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 추계학술대회 논문집
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• pp.330-333
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• 2005

The fabrication of mold fur nano imprint lithography (NIL) is experimentally reported using the scanning probe lithography (SPL) technique, instead of the conventional I-beam lithography technique. The nanometer scale patterning structure is fabricated by the localized generation of oxide patterning on the silicon (100) wafer surface with a thin oxide layer, The fabrication method is based on the contact mode of scanning probe microscope (SPM) in air, The precision cleaning process is also performed to reach the low roughness value of $R_{rms}=0.084 nm$, which is important to increase the reproducibility of patterning. The height and width of the oxide dot are generated to be 15.667 nm and 209.5 nm, respectively, by applying 17 V during 350 ms.